公开(公告)号：US07674394B2

公开(公告)日：2010-03-09

申请号：US11679122

申请日：2007-02-26

申请人： Alexander Paterson ,  Valentin N. Todorov ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland

发明人： Alexander Paterson ,  Valentin N. Todorov ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland

IPC分类号： G01L21/30 ,  H01L21/00 ,  C23F1/00

CPC分类号： H01J37/32082 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244

摘要： A method of processing a workpiece in the chamber of a plasma reactor includes capacitively coupling plasma source power using a ceiling gas distribution plate as the electrode while inductively coupling plasma source power through the ceiling gas distribution plate, and flowing process gas through the gas distribution plate from a gas input to plural gas injection orifices, distributing the gas flow within the gas distribution plate through a succession of arcuate paths joined at respective junctions, dividing gas flow at each junction from a first respective one of said gas flow paths into a respective pair of said gas flow paths in opposite gas flow directions, and restricting the arcuate length of each of the arcuate paths to less than half-circles.

摘要翻译： 在等离子体反应器的室中处理工件的方法包括使用天花板气体分配板作为电极电容耦合等离子体源功率，同时通过天花板气体分配板感应耦合等离子体源功率，并且使处理气体通过气体分配板 从气体输入到多个气体注入孔，通过在各个接合处连接的一系列弧形路径将气流分布在气体分布板内，将每个连接处的气流从第一相应的一个气流通道分成相应的对 的所述气体流动路径在相反的气体流动方向上，并且将每个弧形路径的弓形长度限制为小于半圈。

公开(公告)号：US07727413B2

公开(公告)日：2010-06-01

申请号：US11410717

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

IPC分类号： G01L21/30

CPC分类号： H01J37/321 ,  H01J37/32091 ,  H01J37/32165

摘要： A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and controlling plasma ion density by controlling the effective frequency of the VHF source power. In a preferred embodiment, the step of coupling VHF source power is performed by coupling VHF source power from different generators having different VHF frequencies, and the step of controlling the effective frequency is performed by controlling the ratio of power coupled by the different generators.

摘要翻译： 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入到腔室中，同时（a）将VHF等离子体源功率电容耦合到覆盖在晶片上的腔室的工艺区域中，以及（b）电感耦合 RF等离子体源功率进入工艺区域，并通过控制VHF源功率的有效频率来控制等离子体离子密度。 在优选实施例中，通过耦合具有不同VHF频率的不同发生器的VHF源功率来执行耦合VHF源功率的步骤，并且通过控制由不同发生器耦合的功率比来执行控制有效频率的步骤。

公开(公告)号：US07264688B1

公开(公告)日：2007-09-04

申请号：US11411163

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32935 ,  H01J37/321

摘要： A plasma reactor includes a toroidal plasma source having an RF power applicator, and RF generator being coupled to the RF power applicator. The reactor further includes a capacitively coupled plasma source power applicator or electrode at the ceiling or the workpiece support, a VHF power generator being coupled to the capacitively coupled source power applicator, a plasma bias power applicator or electrode in the workpiece support and an RF bias power generator coupled to the plasma bias power applicator. A controller adjusts the relative amounts of power simultaneously coupled to plasma in the chamber and conduit by the toroidal plasma source and by the capacitively coupled plasma source power applicator.

摘要翻译： 等离子体反应器包括具有RF功率施加器的环形等离子体源，RF发生器耦合到RF功率施加器。 反应器还包括在天花板或工件支撑件处的电容耦合的等离子体源功率施加器或电极，耦合到电容耦合的源功率施加器的VHF发电机，工件支架中的等离子体偏置功率施加器或电极，以及RF偏置 发电机耦合到等离子体偏置功率施加器。 控制器调节通过环形等离子体源和电容耦合的等离子体源功率施加器同时耦合到腔室和管道中的等离子体的功率的相对量。

公开(公告)号：US07780864B2

公开(公告)日：2010-08-24

申请号：US11410780

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

IPC分类号： G01L21/30 ,  C23F1/00

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174

摘要： A method of processing a workpiece in the chamber of a plasma reactor in which the plasma ion density radial distribution in the process region is controlled by adjusting the ratio between the amounts of the (VHF) capacitively coupled power and the inductively coupled power while continuing to maintain the level of total plasma source power. The method can also include applying independently adjustable LF bias power and HF bias power to the workpiece and adjusting the average value and population distribution of ion energy at the surface of the workpiece by adjusting the proportion between the LF and HF bias powers.

摘要翻译： 一种在等离子体反应器的室中处理工件的方法，其中通过调节（VHF）电容耦合功率和电感耦合功率之间的比例来控制处理区域中的等离子体离子密度径向分布，同时继续 保持总等离子体源功率的水平。 该方法还可以包括对工件应用独立可调的LF偏置功率和HF偏置功率，并通过调整LF和HF偏置功率之间的比例来调节工件表面处离子能量的平均值和总体分布。

公开(公告)号：US07645357B2

公开(公告)日：2010-01-12

申请号：US11410697

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

IPC分类号： C23F1/00 ,  H01L19/00 ,  H05B31/26

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174

摘要： A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and plural VHF power generators of different fixed frequencies coupled to the capacitively coupled source power applicator, and a controller for independently controlling the power output levels of the plural VHF generators so as to control an effective VHF frequency applied to the source power electrode. In a preferred embodiment, the reactor further includes a plasma bias power applicator that includes a bias power electrode in the workpiece support and one or more RF bias power generators of different frequencies coupled to the plasma bias power applicator.

摘要翻译： 一种用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，电容耦合的等离子体源功率施加器，其包括源功率电极，其特征在于：（a）天花板 （b）工件支撑件，以及耦合到电容耦合的源功率施加器的不同固定频率的多个甚高频发电机，以及用于独立地控制多个VHF发生器的功率输出电平的控制器，以便控制施加到 源极电极。 在优选实施例中，反应器还包括等离子体偏置功率施加器，其包括工件支撑件中的偏置功率电极和耦合到等离子体偏置功率施加器的不同频率的一个或多个RF偏置功率发生器。

公开(公告)号：US20080206483A1

公开(公告)日：2008-08-28

申请号：US11679122

申请日：2007-02-26

申请人： ALEXANDER PATERSON ,  Valentin N. Todorov ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

发明人： ALEXANDER PATERSON ,  Valentin N. Todorov ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

IPC分类号： H05H1/00

CPC分类号： H01J37/32082 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244

摘要： A method of processing a workpiece in the chamber of a plasma reactor having a ceiling overlying the workpiece by introducing a process gas into the chamber through a gas distribution plate in the ceiling. The gas is introduced by distributing gas flow from a first gas input to plural gas distribution orifices extending through a manifold of the gas distribution plate, and distributing gas flow from each of the plural gas distribution orifices to plural gas injection orifices in a showerhead of the gas distribution plate. The method further includes restricting gas flow in the gas distribution plate to paths having arcuate lengths about an axis of symmetry less than a complete circle. The method also includes capacitively and inductively coupling plasma source power into the chamber through the gas distribution. The method further includes adjusting the plasma ion density radial distribution in the process region by adjusting the ratio between the amounts of the capacitively coupled VHF power and the inductively coupled power.

摘要翻译： 一种在等离子体反应器的腔室中处理工件的方法，该等离子体反应器具有通过天花板中的气体分配板将工艺气体引入室中，该顶板覆盖工件。 通过将气体流从第一气体输入分配到延伸穿过气体分配板的歧管的多个气体分配孔，并将气体流从多个气体分配孔中的每一个分配到多个气体喷射孔中，从而引入气体 气体分配板。 该方法还包括将气体分配板中的气流限制在具有小于完整圆的对称轴的弧形长度的路径上。 该方法还包括通过气体分布将等离子体源功率电容和电感耦合到腔室中。 该方法还包括通过调节电容耦合VHF功率和电感耦合功率的量之间的比例来调节处理区域中的等离子体离子密度径向分布。

公开(公告)号：US20080230008A1

公开(公告)日：2008-09-25

申请号：US11689405

申请日：2007-03-21

申请人： Alexander Paterson ,  Theodoros Panagopoulos ,  Valentin N. Todorov ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

发明人： Alexander Paterson ,  Theodoros Panagopoulos ,  Valentin N. Todorov ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

IPC分类号： C23C16/513 ,  H05H1/24

CPC分类号： H01J37/32146 ,  H01J37/32091 ,  H01J37/32165

摘要： An apparatus for processing a substrate has a chamber, a high frequency power source, and a low frequency power source. The chamber has a first and second electrode disposed therein. The high frequency power source is electrically coupled to either the first or second electrode to supply a first RF signal. The low frequency power source electrically coupled to either the first or second electrode to supply a second RF signal. The first RF signal is pulsed on and off so as to enhance electron loss in the chamber.

摘要翻译： 用于处理衬底的设备具有腔室，高频电源和低频电源。 该室具有设置在其中的第一和第二电极。 高频电源电耦合到第一或第二电极以提供第一RF信号。 所述低频电源电耦合到所述第一或第二电极以提供第二RF信号。 第一RF信号被脉冲打开和关闭，以增强腔室中的电子损失。

公开(公告)号：US20080236490A1

公开(公告)日：2008-10-02

申请号：US11693089

申请日：2007-03-29

申请人： ALEXANDER PATERSON ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

发明人： ALEXANDER PATERSON ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

IPC分类号： C23C16/00

CPC分类号： H01J37/3244 ,  H01J37/32091 ,  H01J37/321

摘要： A plasma reactor for processing a workpiece includes a gas distribution showerhead having a lid, a manifold having a top surface facing the lid and a bottom surface opposing the top surface. Top surface channels in the manifold top surface form a first set of plural paths extending from a first gas input point to plural path ends of the top surface channels. Gas distribution orifices extend axially through the manifold at respective ones of the path ends. Bottom surface channels in the manifold bottom surface form plural paths extending from locations at each of the gas distribution orifices to plural gas distribution path ends. The showerhead further includes a showerhead piece facing the manifold bottom surface and having plural gas injection orifices extending through the showerhead piece.

摘要翻译： 用于加工工件的等离子体反应器包括具有盖的气体分配喷头，具有面向盖的顶表面的歧管和与顶表面相对的底表面。 歧管顶表面中的顶表面通道形成从第一气体输入点延伸到顶表面通道的多个路径端的多个路径的第一组。 气体分配孔在相应的路径端轴向延伸穿过歧管。 歧管底表面中的底表面通道形成从每个气体分配孔处的位置延伸到多个气体分配路径端部的多个路径。 淋浴头还包括面向歧管底面的喷头片，并具有延伸穿过喷头片的多个气体喷射孔。

公开(公告)号：US20090275206A1

公开(公告)日：2009-11-05

申请号：US12143146

申请日：2008-06-20

申请人： Dan Katz ,  David Palagashvili ,  Brian K. Hatcher ,  Theodoros Panagopoulos ,  Valentin N. Todorow ,  Edward P. Hammond, IV ,  Alexander M. Paterson ,  Rodolfo P. Belen

发明人： Dan Katz ,  David Palagashvili ,  Brian K. Hatcher ,  Theodoros Panagopoulos ,  Valentin N. Todorow ,  Edward P. Hammond, IV ,  Alexander M. Paterson ,  Rodolfo P. Belen

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  H01J37/3244 ,  H01J37/32449

摘要： A passivation species precursor gas is furnished to an inner zone at a first flow rate, while flowing an etchant species precursor gas an annular intermediate zone at a second flow rate. Radial distribution of etch rate is controlled by the ratio of the first and second flow rates. The radial distribution of etch critical dimension bias on the wafer is controlled by flow rate of passivation gas to the wafer edge.

摘要翻译： 钝化物质前体气体以第一流速被提供到内部区域，同时以蚀刻剂物质前体气体以第二流速流动环形中间区域。 蚀刻速率的径向分布由第一和第二流速的比率控制。 蚀刻临界尺寸偏置在晶片上的径向分布由通向晶片边缘的钝化气体的流速来控制。

公开(公告)号：US08236133B2

公开(公告)日：2012-08-07

申请号：US12143092

申请日：2008-06-20

申请人： Dan Katz ,  David Palagashvili ,  Brian K. Hatcher ,  Theodoros Panagopoulos ,  Valentin N. Todorow ,  Edward P. Hammond, IV ,  Alexander M. Paterson ,  Rodolfo P. Belen

发明人： Dan Katz ,  David Palagashvili ,  Brian K. Hatcher ,  Theodoros Panagopoulos ,  Valentin N. Todorow ,  Edward P. Hammond, IV ,  Alexander M. Paterson ,  Rodolfo P. Belen

IPC分类号： H01L21/311

CPC分类号： H01L21/31116 ,  H01J37/3244 ,  H01J37/32449

摘要： A gas distribution assembly for the ceiling of a plasma reactor includes a center fed hub and an equal path length distribution gas manifold underlying the center fed hub.

摘要翻译： 用于等离子体反应器的天花板的气体分配组件包括中心供给的轮毂和位于中心供给轮毂下方的相等路径长度的分配气体歧管。