公开(公告)号：US20180350826A1

公开(公告)日：2018-12-06

申请号：US15995693

申请日：2018-06-01

Applicant: Applied Materials, Inc.

Inventor： Jacqueline S. Wrench ,  Jing Zhou ,  Fuqun Grace Vasiknanonte ,  Jiang Lu ,  Paul F. Ma ,  Nobuyuki Sasaki ,  Sree Rangasai V. Kesapragada ,  Sang Ho Yu ,  Mei Chang

IPC: H01L27/11551 ,  H01L27/11578 ,  H01L21/822 ,  H01L21/8229 ,  H01L21/8239 ,  H01L21/285

Abstract: Embodiments of the invention provide methods of processing a substrate having a stack of spaced oxide layers with gaps between the oxide layers. A metallic nucleation layer is formed in the gaps and a cobalt film is deposited on the nucleation layer to form wordlines.

公开(公告)号：US20180340255A1

公开(公告)日：2018-11-29

申请号：US15989827

申请日：2018-05-25

Applicant: Applied Materials, Inc.

Inventor： Jing Zhou ,  Jacqueline S. Wrench ,  Jiang Lu ,  Paul F. Ma ,  Mei Chang

IPC: C23C16/40 ,  H01L21/02 ,  C23C16/455

Abstract: Embodiments of the invention provide methods of depositing a CoOx film at lower processing temperatures and with a higher deposition rate. The methods disclosed herein use cobalt tricarbonyl compounds to form the CoOx film. Both atomic layer deposition and chemical vapor deposition techniques are useful in depositing the CoOx film.

公开(公告)号：US09145612B2

公开(公告)日：2015-09-29

申请号：US13930194

申请日：2013-06-28

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Xinliang Lu ,  Shih Chung Chen ,  Wei Tang ,  Jing Zhou ,  Seshadri Ganguli ,  David Thompson ,  Jeffrey W. Anthis ,  Atif Noori ,  Faruk Gungor ,  Dien-Yeh Wu ,  Mei Chang ,  Xinyu Fu ,  Yu Lei

IPC: C23C18/00 ,  C23C16/08 ,  C23C16/18 ,  C23C16/455

CPC classification number: C23C18/00 ,  C23C16/08 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45553

Abstract: Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.

Abstract translation: 提供了沉积包括铝合金的膜的方法，其可以适合作为N-金属膜。 某些方法包括将衬底表面暴露于包含选自TiCl 4，TaCl 5和HfCl 4的金属卤化物的金属卤化物前体，以在衬底表面提供金属卤化物; 清洗金属卤化物; 将基材表面暴露于包含一种或多种二氢化铝氢化物，二乙基氢化铝，甲基二氢铝和式[（C x H y）3-a AlHa] n的烷基铝氢化物的烷基铝前体，其中x具有1至3的值，y 具有2x + 2的值，a具有1至2的值，并且n具有1至4的值; 并将基材表面暴露于含有二甲基乙基胺丙烷，甲基吡咯烷烃，二（甲基吡咯烷）甲烷和三甲基胺丙烷硼烷中的一种或多种的含Alane的前体。 其他方法包括将基底表面暴露于金属前体和三甲基胺丙烷硼烷。

公开(公告)号：US09914999B2

公开(公告)日：2018-03-13

申请号：US14750322

申请日：2015-06-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad M. Rasheed ,  Balasubramanian Ramachandran ,  Shih Chung Chen ,  Kevin A. Papke ,  Lei Zhou ,  Jing Zhou

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45544 ,  C23C16/4404 ,  C23C16/45565

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a process chamber includes: a chamber body and a lid assembly defining a processing volume within the process chamber; a substrate support disposed within the processing volume to support a substrate; and a showerhead having a first surface including a plurality of gas distribution holes disposed opposite and parallel to the substrate support, wherein the showerhead is fabricated from aluminum and includes an aluminum oxide coating along the first surface, wherein the aluminum oxide coating has a thickness of about 0.0001 to about 0.002 inches. In some embodiments, the showerhead may further have at least one of a roughness of about 10 to about 300 μ-in Ra, or an emissivity (∈) of about 0.20 to about 0.80. The process chamber may be a thermal atomic layer deposition (ALD) chamber.

公开(公告)号：US09683287B2

公开(公告)日：2017-06-20

申请号：US14058406

申请日：2013-10-21

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Srinivas Gandikota ,  Xinliang Lu ,  Wei Tang ,  Jing Zhou ,  Seshadri Ganguli ,  Jeffrey W. Anthis ,  Atif Noori ,  Faruk Gungor ,  Dien-Yeh Wu ,  Mei Chang ,  Shih Chung Chen

IPC: C23C16/12 ,  C23C16/30 ,  C23C16/455

CPC classification number: C23C16/30 ,  C23C16/45531 ,  C23C16/45534

Abstract: Films comprising Aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and the film has less than about 50% carbon. Methods of forming the films comprise exposing a substrate to a metal halide precursor, purging the metal halide precursor from the processing chamber and then exposing the substrate to an alkyl aluminum precursor and an alane precursor, either sequentially or simultaneously. The alane precrursor comprises an amine-alane and a stabilizing amine selected from one or more of diemthylcyclohexylamine or dicyclomethylhexylamine.

公开(公告)号：US09530627B2

公开(公告)日：2016-12-27

申请号：US14484423

申请日：2014-09-12

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Xinliang Lu ,  Kyoung-Ho Bu ,  Jing Zhou ,  Seshadri Ganguli ,  David Thompson

IPC: H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32862 ,  C23C16/08 ,  C23C16/4405 ,  H01J37/32522 ,  H01J37/32724

Abstract: Embodiments described herein relate to a thermal chlorine gas cleaning process. In one embodiment, a method for cleaning N-Metal film deposition in a processing chamber includes positioning a dummy substrate on a substrate support. The processing chamber is heated to at least about 50 degrees Celsius. The method further includes flowing chlorine gas into the processing chamber and evacuating chlorine gas from the processing chamber. In another embodiment, a method for cleaning titanium aluminide film deposition in a processing chamber includes heating the processing chamber to a temperature between about 70 about degrees Celsius and about 100 degrees Celsius, wherein the processing chamber and the substrate support include one or more fluid channels configured to heat or cool the processing chamber and the substrate support.

Abstract translation: 本文所述的实施方案涉及热氯气清洗工艺。 在一个实施例中，用于清洁处理室中的N金属膜沉积的方法包括将虚设基板定位在基板支撑件上。 将处理室加热至至少约50摄氏度。 该方法还包括将氯气流入处理室并从处理室排出氯气。 在另一个实施方案中，一种用于清洁处理室中的铝化铝膜沉积的方法包括将处理室加热到约70摄氏度至约100摄氏度之间的温度，其中处理室和衬底支撑体包括一个或多个流体通道 被配置为加热或冷却处理室和基板支撑件。

公开(公告)号：US11355391B2

公开(公告)日：2022-06-07

申请号：US16803842

申请日：2020-02-27

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Feiyue Ma ,  Kai Wu ,  Yu Lei ,  Kazuya Daito ,  Yi Xu ,  Vikash Banthia ,  Mei Chang ,  He Ren ,  Raymond Hoiman Hung ,  Yakuan Yao ,  Avgerinos V. Gelatos ,  David T. Or ,  Jing Zhou ,  Guoqiang Jian ,  Chi-Chou Lin ,  Yiming Lai ,  Jia Ye ,  Jenn-Yue Wang

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3213

Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

公开(公告)号：US10559578B2

公开(公告)日：2020-02-11

申请号：US15995693

申请日：2018-06-01

Applicant: Applied Materials, Inc.

Inventor： Jacqueline S. Wrench ,  Jing Zhou ,  Fuqun Grace Vasiknanonte ,  Jiang Lu ,  Paul F. Ma ,  Nobuyuki Sasaki ,  Sree Rangasai V. Kesapragada ,  Sang Ho Yu ,  Mei Chang

IPC: H01L21/00 ,  H01L27/11551 ,  H01L27/11578 ,  H01L21/285 ,  H01L21/8229 ,  H01L21/8239 ,  H01L21/822

Abstract: Embodiments of the invention provide methods of processing a substrate having a stack of spaced oxide layers with gaps between the oxide layers. A metallic nucleation layer is formed in the gaps and a cobalt film is deposited on the nucleation layer to form wordlines.