公开(公告)号：US20150025668A1

公开(公告)日：2015-01-22

申请号：US14507553

申请日：2014-10-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun YE ,  Yu CAO ,  James Patrick KOONMEN

IPC: G03F9/00 ,  B29C67/00

CPC classification number: G03F7/70525 ,  B29C64/386 ,  G03F9/7096 ,  G05B13/04

Abstract: The present invention provides a number of innovations in the area of computational process control (CPC). CPC offers unique diagnostic capability during chip manufacturing cycle by analyzing temporal drift of a lithography apparatus/ process, and provides a solution towards achieving performance stability of the lithography apparatus/process. Embodiments of the present invention enable optimized process windows and higher yields by keeping performance of a lithography apparatus and/or parameters of a lithography process substantially close to a pre-defined baseline condition. This is done by comparing the measured temporal drift to a baseline performance using a lithography process simulation model. Once in manufacturing, CPC optimizes a scanner for specific patterns or reticles by leveraging wafer metrology techniques and feedback loop, and monitors and controls, among other things, overlay and/or CD uniformity (CDU) performance over time to continuously maintain the system close to the baseline condition.

Abstract translation: 本发明提供了计算过程控制（CPC）领域的许多创新。 CPC通过分析光刻设备/工艺的时间漂移​​，在芯片制造周期中提供独特的诊断功能，并为实现光刻设备/工艺的性能稳定性提供了解决方案。 本发明的实施例通过保持光刻设备的性能和/或基本上接近预定义基线条件的光刻工艺的参数来实现优化的工艺窗口和更高的产量。 这通过使用光刻过程模拟模型将测量的时间漂移​​与基线性能进行比较来完成。 一旦制造，CPC通过利用晶片计量技术和反馈回路来优化扫描仪的特定图案或掩模版，并监控和控制其他方面的重叠和/或CD均匀性（CDU）性能，以持续保持系统接近 基线条件。

公开(公告)号：US20140351773A1

公开(公告)日：2014-11-27

申请号：US14456586

申请日：2014-08-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Wenjin SHAO ,  Ronaldus Johannes Gijsbertus GOOSSENS ,  Jun YE ,  James Patrick KOONMEN

IPC: G06F17/50

CPC classification number: B29C67/0088 ,  B29C64/386 ,  G03F7/70091 ,  G03F7/70458 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70525 ,  G06F17/50 ,  G06F17/5009 ,  G06F17/5081

Abstract: Systems and methods for process simulation are described. The methods may use a reference model identifying sensitivity of a reference scanner to a set of tunable parameters. Chip fabrication from a chip design may be simulated using the reference model, wherein the chip design is expressed as one or more masks. An iterative retuning and simulation process may be used to optimize critical dimension in the simulated chip and to obtain convergence of the simulated chip with an expected chip. Additionally, a designer may be provided with a set of results from which an updated chip design is created.

Abstract translation: 描述了过程仿真的系统和方法。 这些方法可以使用标识参考扫描仪对一组可调谐参数的灵敏度的参考模型。 可以使用参考模型来模拟来自芯片设计的芯片制造，其中芯片设计被表示为一个或多个掩模。 可以使用迭代重调和仿真过程来优化模拟芯片中的关键尺寸，并获得模拟芯片与预期芯片的收敛。 此外，可以向设计者提供一组结果，从中创建更新的芯片设计。

公开(公告)号：US20140208278A1

公开(公告)日：2014-07-24

申请号：US14246961

申请日：2014-04-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Wenjin SHAO ,  Jun YE ,  Ronaldus Johannes Gljsbertus GOOSSENS

IPC: G06F17/50 ,  G03F7/20

CPC classification number: G06F17/50 ,  G03F1/14 ,  G03F1/44 ,  G03F1/68 ,  G03F7/70433 ,  G03F7/705 ,  G06F17/10 ,  G06F17/5009

Abstract: The present invention relates generally to methods and apparatuses for test pattern selection for computational lithography model calibration. According to some aspects, the pattern selection algorithms of the present invention can be applied to any existing pool of candidate test patterns. According to some aspects, the present invention automatically selects those test patterns that are most effective in determining the optimal model parameter values from an existing pool of candidate test patterns, as opposed to designing optimal patterns. According to additional aspects, the selected set of test patterns according to the invention is able to excite all the known physics and chemistry in the model formulation, making sure that the wafer data for the test patterns can drive the model calibration to the optimal parameter values that realize the upper bound of prediction accuracy imposed by the model formulation.

Abstract translation: 本发明一般涉及用于计算光刻模型校准的测试图案选择的方法和装置。 根据一些方面，本发明的模式选择算法可以应用于任何现有的候选测试模式池。 根据一些方面，与设计最佳图案相反，本发明自动选择从现有的候选测试图案池中确定最佳模型参数值最有效的测试图案。 根据另外的方面，根据本发明的所选择的一组测试图案能够激发模型配方中的所有已知物理和化学，确保用于测试图案的晶片数据可以将模型校准驱动到最佳参数值 实现了模型公式对预测精度的上限。

公开(公告)号：US20210064811A1

公开(公告)日：2021-03-04

申请号：US17097106

申请日：2020-11-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Peng LIU ,  Yu CAO ,  Luoqi CHEN ,  Jun YE

IPC: G06F30/398 ,  G03F7/20 ,  G06F30/30 ,  G03F1/76 ,  G03F1/50

Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

公开(公告)号：US20130232457A1

公开(公告)日：2013-09-05

申请号：US13858795

申请日：2013-04-08

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun YE ,  Yu Cao ,  Hanying Feng

IPC: G06F17/50

CPC classification number: G06F17/50 ,  G03F1/144 ,  G03F1/36 ,  G03F1/68 ,  G03F7/70433 ,  G03F7/705 ,  G03F7/70516

Abstract: A method of efficient optical and resist parameters calibration based on simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process. Systems and methods for calibration of lithographic processes whereby a polynomial fit is calculated for a nominal configuration of the optical system and which can be used to estimate critical dimensions for other configurations.

Abstract translation: 一种基于模拟用于对具有多个特征进行成像的目标设计的光刻工艺的成像性能的有效的光学和抗蚀剂参数校准的方法。 该方法包括以下步骤：确定用于产生模拟图像的功能，其中该功能考虑到与光刻工艺相关联的工艺变化; 并利用该功能产生模拟图像，其中模拟图像表示用于光刻工艺的目标设计的成像结果。 用于校准光刻过程的系统和方法，由此针对光学系统的标称配置计算多项式拟合，并且其可以用于估计其他配置的关键尺寸。

公开(公告)号：US20200218850A1

公开(公告)日：2020-07-09

申请号：US16821048

申请日：2020-03-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Luoqi CHEN ,  Jun YE ,  Yu CAO

IPC: G06F30/398 ,  G03F7/20 ,  G03F1/36 ,  G06F30/39 ,  G03F1/00

Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.

公开(公告)号：US20160033872A1

公开(公告)日：2016-02-04

申请号：US14880018

申请日：2015-10-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun YE ,  Yu Cao

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G03F7/70125 ,  G03F7/70458 ,  G03F7/70516 ,  G03F7/70525

Abstract: A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.

Abstract translation: 一种基于模型的调谐方法，用于利用参考光刻系统调整第一光刻系统，每个参考光刻系统具有用于控制成像性能的可调参数。 该方法包括定义测试图案和成像模型的步骤; 使用参考光刻系统成像测试图案并测量成像结果; 使用第一光刻系统成像测试图案并测量成像结果; 使用对应于参考光刻系统的成像结果校准成像模型，其中校准的成像模型具有第一组参数值; 使用对应于第一光刻系统的成像结果来调整校准的成像模型，其中调谐的校准模型具有第二组参数值; 以及基于第一组参数值和第二组参数值之间的差异来调整第一光刻系统的参数。

公开(公告)号：US20150186557A1

公开(公告)日：2015-07-02

申请号：US14589738

申请日：2015-01-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun YE ,  Yu CAO ,  Hanying FENG ,  Wenjin SHAO

IPC: G06F17/50 ,  G06F17/10

CPC classification number: G06F17/50 ,  G03F1/14 ,  G03F1/44 ,  G03F1/68 ,  G03F7/70433 ,  G03F7/705 ,  G06F17/10 ,  G06F17/5009

Abstract: Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.

Abstract translation: 根据本发明的方法提供了用于设计用于校准用于模拟过程中的模型的计量模式的计算上有效的技术。 更具体地说，本发明涉及设计规格图案的方法，该图形模式可以用最小数量的量规完成覆盖参数变化，并且在用于对具有多个特征的目标设计进行成像的光刻处理的校准中的对应测量。 根据一些方面，根据本发明的方法包括改变模型参数空间的空间（基于CD灵敏度或Delta TCC），然后迭代地识别在该新空间中与现有计量器的CD灵敏度最正交的方向，以及 确定最敏感的线宽/间距组合与最佳辅助功能放置，导致在模型参数空间中沿着该方向的最敏感的CD变化。

公开(公告)号：US20150045935A1

公开(公告)日：2015-02-12

申请号：US14525704

申请日：2014-10-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Wenjin SHAO ,  Ronaldus Johannes Gijsbertus GOOSSENS ,  Jun YE ,  James Patrick KOONMEN

IPC: B29C67/00

CPC classification number: B29C64/386 ,  G03F7/70091 ,  G03F7/70458 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70525 ,  G06F17/50 ,  G06F17/5009 ,  G06F17/5081

Abstract: Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.

Abstract translation: 描述用于调整光刻工艺的系统和方法。 保持目标扫描仪的型号，参考一组可调谐参数来定义目标扫描仪的灵敏度。 差分模型表示目标扫描器与参考值的偏差。 可以基于参考扫描仪和差分模型的设置来调整目标扫描仪。 可以相对于参考扫描仪的性能来表征相关扫描仪系列的性能。 差分模型可能包括诸如参数偏移和可能用于模拟成像行为差异的其他差异的信息。

公开(公告)号：US20130219348A1

公开(公告)日：2013-08-22

申请号：US13854872

申请日：2013-04-01

Applicant: ASML Netherlands B.V.

Inventor： Jun YE ,  Jiangwei Li ,  Stefan Hunsche

IPC: G06F17/50

CPC classification number: G06F17/50 ,  G03F1/144 ,  G03F1/36

Abstract: One embodiment of a method for process window optimized optical proximity correction includes applying optical proximity corrections to a design layout, simulating a lithography process using the post-OPC layout and models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images. A weighted average error in the critical dimension or other contour metric for each edge segment of each feature in the design layout is determined, wherein the weighted average error is an offset between the contour metric at each process condition and the contour metric at nominal condition averaged over the plurality of process conditions. A retarget value for the contour metric for each edge segment is determined using the weighted average error and applied to the design layout prior to applying further optical proximity corrections.

Abstract translation: 用于处理窗口优化的光学邻近校正的方法的一个实施例包括将光学邻近校正应用于设计布局，使用后OPC布局模拟光刻处理和在多个工艺条件下的光刻工艺的模型，以产生多个模拟 抵抗图像。 确定设计布局中每个特征的每个边缘段的临界尺寸或其他轮廓度量的加权平均误差，其中加权平均误差是在每个处理条件下的轮廓度量与标称条件下的轮廓度量之间的偏移平均 在多个工艺条件下。 使用加权平均误差确定每个边缘段的轮廓度量的重定向值，并在应用进一步的光学邻近校正之前应用于设计布局。