公开(公告)号：US20080246030A1

公开(公告)日：2008-10-09

申请号：US11675021

申请日：2007-02-14

申请人： Akella V.S. Satya ,  Gustavo A. Pinto ,  David L. Adler ,  Robert Thomas Long ,  Neil Richardson ,  Kurt H. Weiner ,  David J. Walker ,  Lynda C. Mantalas ,  Padma A. Satya

发明人： Akella V.S. Satya ,  Gustavo A. Pinto ,  David L. Adler ,  Robert Thomas Long ,  Neil Richardson ,  Kurt H. Weiner ,  David J. Walker ,  Lynda C. Mantalas ,  Padma A. Satya

IPC分类号： H01L23/58 ,  H01L21/00

CPC分类号： H01L23/5226 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a semiconductor die having a scanning area. The semiconductor die includes a first plurality of test structures wherein each of the test structures in the first plurality of test structures is located entirely within the scanning area. The semiconductor die further includes a second plurality of test structures wherein each of the test structures in the first plurality of test structures is located only partially within the scanning area. The test structures are arranged so that a scan of the scanning area results in detection of defects outside of the scanning area.

摘要翻译： 公开了具有扫描区域的半导体管芯。 半导体管芯包括第一多个测试结构，其中第一多个测试结构中的每个测试结构完全位于扫描区域内。 半导体管芯还包括第二多个测试结构，其中第一多个测试结构中的每个测试结构仅部分位于扫描区域内。 测试结构被布置成使得扫描区域的扫描导致检测到扫描区域外的缺陷。

公开(公告)号：US06921672B2

公开(公告)日：2005-07-26

申请号：US10338936

申请日：2003-01-07

申请人： Akella V. S. Satya ,  Gustavo A. Pinto ,  David L. Adler ,  Robert Thomas Long ,  Neil Richardson ,  Kurt H. Weiner ,  David J. Walker ,  Lynda C. Mantalas

发明人： Akella V. S. Satya ,  Gustavo A. Pinto ,  David L. Adler ,  Robert Thomas Long ,  Neil Richardson ,  Kurt H. Weiner ,  David J. Walker ,  Lynda C. Mantalas

IPC分类号： G01N21/66 ,  G01N21/95 ,  G01N21/956 ,  G01R31/28 ,  G01R31/307 ,  H01L23/544 ,  H01L21/66

CPC分类号： H01L22/34 ,  G01N21/66 ,  G01N21/956 ,  G01R31/2884 ,  G01R31/307 ,  H01J2237/2817

摘要： Disclosed is a semiconductor die having a scanning area. The semiconductor die includes a first plurality of test structures wherein each of the test structures in the first plurality of test structures is located entirely within the scanning area. The semiconductor die further includes a second plurality of test structures wherein each of the test structures in the first plurality of test structures is located only partially within the scanning area. The test structures are arranged so that a scan of the scanning area results in detection of defects outside of the scanning area.

摘要翻译： 公开了具有扫描区域的半导体管芯。 半导体管芯包括第一多个测试结构，其中第一多个测试结构中的每个测试结构完全位于扫描区域内。 半导体管芯还包括第二多个测试结构，其中第一多个测试结构中的每个测试结构仅部分位于扫描区域内。 测试结构被布置成使得扫描区域的扫描导致检测到扫描区域外的缺陷。

公开(公告)号：US06528818B1

公开(公告)日：2003-03-04

申请号：US09648380

申请日：2000-08-25

申请人： Akella V. S. Satya ,  Gustavo A. Pinto ,  David L. Adler ,  Robert Thomas Long ,  Neil Richardson ,  Kurt H. Weiner ,  David J. Walker ,  Lynda C. Mantalas

发明人： Akella V. S. Satya ,  Gustavo A. Pinto ,  David L. Adler ,  Robert Thomas Long ,  Neil Richardson ,  Kurt H. Weiner ,  David J. Walker ,  Lynda C. Mantalas

IPC分类号： H01L2358

CPC分类号： H01L22/34 ,  G01N21/66 ,  G01N21/956 ,  G01R31/2884 ,  G01R31/307 ,  H01J2237/2817

摘要： Disclosed is a semiconductor die having a scanning area. The semiconductor die includes a first plurality of test structures wherein each of the test structures in the first plurality of test structures is located entirely within the scanning area. The semiconductor die further includes a second plurality of test structures wherein each of the test structures in the first plurality of test structures is located only partially within the scanning area. The test structures are arranged so that a scan of the scanning area results in detection of defects outside of the scanning area.

摘要翻译： 公开了具有扫描区域的半导体管芯。 半导体管芯包括第一多个测试结构，其中第一多个测试结构中的每个测试结构完全位于扫描区域内。 半导体管芯还包括第二多个测试结构，其中第一多个测试结构中的每个测试结构仅部分位于扫描区域内。 测试结构被布置成使得扫描区域的扫描导致检测到扫描区域外的缺陷。

公开(公告)号：US20080237487A1

公开(公告)日：2008-10-02

申请号：US11675013

申请日：2007-02-14

申请人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V.S. Satya ,  Robert Thomas Long ,  David J. Walker ,  Padma A. Satya

发明人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V.S. Satya ,  Robert Thomas Long ,  David J. Walker ,  Padma A. Satya

IPC分类号： G21G5/00

CPC分类号： H01L23/5226 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.

摘要翻译： 公开了一种检查样品的方法。 用至少一个粒子束沿第一方向扫描样品。 用至少一个粒子束在第二个方向上扫描样品。 第二方向与第一方向成一个角度。 作为第一扫描的结果，发现样品的每个区域的缺陷数，并且从第二次扫描确定发现的一个或多个缺陷的位置。 在具体实施例中，样本包括其上具有多个测试元件的测试结构。 测试元件的第一部分在第一次扫描期间暴露于光束以识别具有缺陷的测试元件，并且第二部分测试元件在第二次扫描期间暴露以分离和表征缺陷。

公开(公告)号：US07656170B2

公开(公告)日：2010-02-02

申请号：US11675013

申请日：2007-02-14

申请人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V. S. Satya ,  Padma A. Satya, legal representative ,  Robert Thomas Long ,  David J. Walker

发明人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V. S. Satya ,  Robert Thomas Long ,  David J. Walker

IPC分类号： G01R31/02

CPC分类号： H01L23/5226 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.

摘要翻译： 公开了一种检查样品的方法。 用至少一个粒子束沿第一方向扫描样品。 用至少一个粒子束在第二个方向上扫描样品。 第二方向与第一方向成一个角度。 作为第一扫描的结果，发现样品的每个区域的缺陷数，并且从第二次扫描确定发现的一个或多个缺陷的位置。 在具体实施例中，样本包括其上具有多个测试元件的测试结构。 测试元件的第一部分在第一次扫描期间暴露于光束以识别具有缺陷的测试元件，并且第二部分测试元件在第二次扫描期间暴露以分离和表征缺陷。

公开(公告)号：US06576923B2

公开(公告)日：2003-06-10

申请号：US10178329

申请日：2002-06-21

申请人： Akella V. S. Satya ,  Robert Thomas Long ,  Lynda C. Mantalas ,  Gustavo A. Pinto ,  Neil Richardson

发明人： Akella V. S. Satya ,  Robert Thomas Long ,  Lynda C. Mantalas ,  Gustavo A. Pinto ,  Neil Richardson

IPC分类号： H01L2358

CPC分类号： H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S977/712 ,  Y10S977/723 ,  Y10S977/888 ,  Y10S977/89 ,  H01L2924/00

摘要： Disclosed is a semiconductor die having a lower test structure formed in a lower metal layer of the semiconductor die. The lower conductive test structure has a first end and a second end. The first end is coupled to a predetermined voltage level. The semiconductor die also includes an insulating layer formed over the lower metal layer. The die further includes an upper test structure formed in an upper metal layer of the semiconductor die. The upper conductive test structure is coupled with the second end of the lower conductive test structure. The upper metal layer is formed over the insulating layer. In a specific implementation, the first end of the lower test structure is coupled to ground. In another embodiment, the semiconductor die also includes a substrate and a first via coupled between the first end of the lower test structure and the substrate. In yet another aspect, the lower test structure is an extended metal line, and the upper test structure is a voltage contrast element. Methods for inspecting and fabricating such semiconductor die are also disclosed.

公开(公告)号：US06509197B1

公开(公告)日：2003-01-21

申请号：US09648212

申请日：2000-08-25

申请人： Akella V. S. Satya ,  Robert Thomas Long ,  Lynda C. Mantalas ,  Gustavo A. Pinto ,  Neil Richardson

发明人： Akella V. S. Satya ,  Robert Thomas Long ,  Lynda C. Mantalas ,  Gustavo A. Pinto ,  Neil Richardson

IPC分类号： H01L2100

CPC分类号： H01L22/34 ,  G01N21/66 ,  G01N21/956 ,  G01R31/2884 ,  G01R31/307 ,  H01J2237/2817 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a semiconductor die having a lower test structure formed in a lower metal layer of the semiconductor die. The lower conductive test structure has a first end and a second end. The first end is coupled to a predetermined voltage level. The semiconductor die also includes an insulating layer formed over the lower metal layer. The die further includes an upper test structure formed in an upper metal layer of the semiconductor die. The upper conductive test structure is coupled with the second end of the lower conductive test structure. The upper metal layer is formed over the insulating layer. In a specific implementation, the first end of the lower test structure is coupled to ground. In another embodiment, the semiconductor die also includes a substrate and a first via coupled between the first end of the lower test structure and the substrate. In yet another aspect, the lower test structure is an extended metal line, and the upper test structure is a voltage contrast element. Methods for inspecting and fabricating such semiconductor die are also disclosed.

公开(公告)号：US06813572B2

公开(公告)日：2004-11-02

申请号：US10281432

申请日：2002-10-24

申请人： Akella V.S. Satya ,  Li Song ,  Robert Thomas Long ,  Kurt H. Weiner

发明人： Akella V.S. Satya ,  Li Song ,  Robert Thomas Long ,  Kurt H. Weiner

IPC分类号： G06F1900

CPC分类号： G01R31/287 ,  G01R31/2831 ,  G01R31/2856 ,  G01R31/2858 ,  G01R31/2894

摘要： Disclosed are methods and apparatus for determining whether to perform burn-in on a semiconductor product, such as a product wafer or product wafer lot. In general terms, test structures on the semiconductor product are inspected to extract yield information, such as defect densities. Since this yield information is related to the early or extrinsic instantaneous failure rate, one may then determine the instantaneous extrinsic failure rate for one or more failure mechanisms, such as electromigration, gate oxide breakdown, or hot carrier injection, based on this yield information. It is then determined whether to perform burn-in on the semiconductor product based on the determined instantaneous failure rate.

摘要翻译： 公开了用于确定是否对诸如产品晶片或产品晶片批次的半导体产品进行老化的方法和装置。 通常，检查半导体产品上的测试结构以提取诸如缺陷密度的产量信息。 由于该产量信息与早期或非本征瞬时故障率相关，因此可以基于该产量信息来确定一个或多个故障机制的瞬时外在故障率，例如电迁移，栅极氧化物分解或热载流子注入。 然后，根据所确定的瞬时故障率，确定是否对半导体产品进行老化。

公开(公告)号：US06867606B2

公开(公告)日：2005-03-15

申请号：US10390502

申请日：2003-03-13

申请人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V. S. Satya ,  Robert Thomas Long ,  David J. Walker

发明人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V. S. Satya ,  Robert Thomas Long ,  David J. Walker

IPC分类号： G01N21/66 ,  G01N21/95 ,  G01N21/956 ,  G01N23/04 ,  G01Q30/16 ,  G01Q60/44 ,  G01R31/28 ,  G01R31/307 ,  H01L23/544 ,  G01R31/304

CPC分类号： H01L22/34 ,  G01N21/66 ,  G01N21/956 ,  G01N23/04 ,  G01R31/2884 ,  G01R31/307 ,  H01J2237/2817 ,  Y10S977/849

摘要： Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.

公开(公告)号：US07012439B2

公开(公告)日：2006-03-14

申请号：US11058943

申请日：2005-02-15

申请人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V. S. Satya ,  Robert Thomas Long ,  David J. Walker

发明人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V. S. Satya ,  Robert Thomas Long ,  David J. Walker

IPC分类号： G01R31/304

CPC分类号： H01L22/34 ,  G01N21/66 ,  G01N21/956 ,  G01N23/04 ,  G01R31/2884 ,  G01R31/307 ,  H01J2237/2817 ,  Y10S977/849

摘要： Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.

摘要翻译： 公开了一种检查样品的方法。 用至少一个粒子束沿第一方向扫描样品。 用至少一个粒子束在第二个方向上扫描样品。 第二方向与第一方向成一个角度。 作为第一扫描的结果，发现样品的每个区域的缺陷数，并且从第二次扫描确定发现的一个或多个缺陷的位置。 在具体实施例中，样本包括其上具有多个测试元件的测试结构。 测试元件的第一部分在第一次扫描期间暴露于光束以识别具有缺陷的测试元件，并且第二部分测试元件在第二次扫描期间暴露以分离和表征缺陷。