公开(公告)号：US07125588B2

公开(公告)日：2006-10-24

申请号：US10728987

申请日：2003-12-08

申请人： Akiharu Miyanaga ,  Tohru Inoue ,  Shunpei Yamazaki

发明人： Akiharu Miyanaga ,  Tohru Inoue ,  Shunpei Yamazaki

IPC分类号： H05H1/30

CPC分类号： C23C16/26 ,  C23C16/515 ,  C23C16/517 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32678 ,  Y10S427/103 ,  Y10S427/104

摘要： A method of forming an insulating ceramic film or a metallic film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave.

摘要翻译： 通过等离子体CVD法形成绝缘陶瓷膜或金属膜的方法，其中在存在用于产生等离子体的电力具有脉冲波形的磁场的情况下产生高密度等离子体。 电力通常由微波提供，并且脉冲波可以是具有两步峰值的复波，或者可以是通过使脉冲波与静止连续波相互合成而获得的复波。

公开(公告)号：US06660342B1

公开(公告)日：2003-12-09

申请号：US09636222

申请日：2000-08-10

申请人： Akiharu Miyanaga ,  Tohru Inoue ,  Shunpei Yamazaki

发明人： Akiharu Miyanaga ,  Tohru Inoue ,  Shunpei Yamazaki

IPC分类号： C23C1626

CPC分类号： C23C16/26 ,  C23C16/515 ,  C23C16/517 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32678 ,  Y10S427/103 ,  Y10S427/104

摘要： A method of forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave.

摘要翻译： 通过等离子体CVD工艺形成膜的方法，其中在存在用于产生等离子体的电力具有脉冲波形的磁场的情况下产生高密度等离子体。 电力通常由微波提供，并且脉冲波可以是具有两步峰值的复波，或者可以是通过使脉冲波与静止连续波相互合成而获得的复波。

公开(公告)号：US6110542A

公开(公告)日：2000-08-29

申请号：US262853

申请日：1999-03-05

申请人： Akiharu Miyanaga ,  Tohru Inoue ,  Shunpei Yamazaki

发明人： Akiharu Miyanaga ,  Tohru Inoue ,  Shunpei Yamazaki

IPC分类号： C23C16/00 ,  C23C16/26 ,  C23C16/515 ,  C23C16/517 ,  H01J37/32 ,  H05H1/24 ,  H05H1/02

CPC分类号： C23C16/26 ,  C23C16/515 ,  C23C16/517 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32678 ,  Y10S427/103 ,  Y10S427/104

摘要： A method for forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field is described, characterized by that the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave of an electromagnetic wave having the same or different wavelength as that of the pulsed wave. The process enables deposition of a uniform film having an excellent adhesion to the substrate, at a reduced power consumption.

摘要翻译： 描述了通过在存在磁场的情况下产生高密度等离子体的等离子体CVD工艺形成膜的方法，其特征在于用于产生等离子体的电力具有脉冲波形。 电力通常由微波提供，并且脉冲波可以是具有两级峰值的复合波，或者可以是通过将脉冲波与具有相同的电磁波的静止连续波相结合而获得的复合波， 波长与脉冲波的不同。 该方法能够以降低的功率消耗沉积具有优异粘合性的均匀的膜。

公开(公告)号：US5626922A

公开(公告)日：1997-05-06

申请号：US463058

申请日：1995-06-05

申请人： Akiharu Miyanaga ,  Tohru Inoue ,  Shunpei Yamazaki

发明人： Akiharu Miyanaga ,  Tohru Inoue ,  Shunpei Yamazaki

IPC分类号： C23C16/00 ,  C23C16/26 ,  C23C16/515 ,  C23C16/517 ,  H01J37/32 ,  H05H1/00

CPC分类号： C23C16/26 ,  C23C16/515 ,  C23C16/517 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32678 ,  Y10S427/103 ,  Y10S427/104

摘要： A method for forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field is described, characterized by that the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave of an electromagnetic wave having the same or different wavelength as that of the pulsed wave. The process enables deposition of a uniform film having an excellent adhesion to the substrate, at a reduced power consumption.

摘要翻译： 描述了通过在存在磁场的情况下产生高密度等离子体的等离子体CVD工艺形成膜的方法，其特征在于用于产生等离子体的电力具有脉冲波形。 电力通常由微波提供，并且脉冲波可以是具有两级峰值的复合波，或者可以是通过将脉冲波与具有相同的电磁波的静止连续波相结合而获得的复合波， 波长与脉冲波的不同。 该方法能够以降低的功率消耗沉积具有优异粘合性的均匀的膜。

公开(公告)号：US5549780A

公开(公告)日：1996-08-27

申请号：US35921

申请日：1993-03-22

申请人： Hideomi Koinuma ,  Tadashi Shiraishi ,  Tohru Inoue ,  Kiyoto Inomata ,  Shigenori Hayashi ,  Akiharu Miyanaga ,  Shunpei Yamazaki

发明人： Hideomi Koinuma ,  Tadashi Shiraishi ,  Tohru Inoue ,  Kiyoto Inomata ,  Shigenori Hayashi ,  Akiharu Miyanaga ,  Shunpei Yamazaki

IPC分类号： B29C47/12 ,  B29C59/14 ,  H01J37/32 ,  H05H1/46 ,  C23F1/02 ,  C23C16/00

CPC分类号： H01J37/32009 ,  B29C47/0009 ,  B29C59/14 ,  H01J37/32532 ,  H05H1/46 ,  B29K2079/08

摘要： An apparatus for generating plasma of helium mainly-contained gas added with halogen element using high-frequency energy which is applied between concentrically-arranged electrodes to conduct an etching treatment on a substrate with the thus-generated plasma, is equipped with a grounded electrode on the surface of the substrate, the grounded electrode serving to prevent electrification or charging of the substrate. A cylindrical insulator is provided between the electrodes so as to be contacted with the outside electrode, and a voltage applied between the central electrode and the cylindrical insulator is heightened by reducing the thickness of the cylindrical insulator or increasing the dielectric constant of the cylindrical insulator, so that low-temperature plasma is generated under atmospheric pressure using argon mainly-contained gas in a reaction space. Further, in a plasma generating apparatus for generating plasma with a pair of parallel electrodes, an insulator having high dielectric constant is provided in close contact with one of the electrodes, and gas mainly containing rare gas such as helium, argon or the like is supplied into the discharge space between the pair of parallel electrodes while the flow amount of the gas is controlled by a flow-amount controller, thereby inducing the gas to plasma under atmospheric pressure, and generating a sheet-shaped plasma.

摘要翻译： 使用施加在同心布置的电极之间的高频能量的添加有卤素元素的氦气主要含有气体的等离子体等离子体的设备，用这样产生的等离子体对衬底进行蚀刻处理，配备有接地电极 衬底的表面，接地电极用于防止衬底的起电或充电。 在电极之间设置圆柱形绝缘体以与外部电极接触，并且通过减小圆柱形绝缘体的厚度或提高圆柱形绝缘体的介电常数来提高施加在中心电极和圆柱形绝缘体之间的电压， 使得在大气压下使用氩气主要含有的气体在反应空间中产生低温等离子体。 此外，在用一对平行电极产生等离子体的等离子体生成装置中，提供具有高介电常数的绝缘体，与其中一个电极紧密接触，并且主要包含诸如氦，氩等的稀有气体的气体被供应 进入一对平行电极之间的放电空间，同时通过流量控制器控制气体的流量，从而在大气压下使气体进入等离子体，并产生片状等离子体。

公开(公告)号：US09935202B2

公开(公告)日：2018-04-03

申请号：US13528009

申请日：2012-06-20

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

公开(公告)号：US09171938B2

公开(公告)日：2015-10-27

申请号：US12888835

申请日：2010-09-23

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

摘要： An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.

摘要翻译： 目的在于提供一种薄膜晶体管及其制造方法，该薄膜晶体管包括具有受控阈值电压，高操作速度，相对容易的制造工艺以及足够的可靠性的氧化物半导体。 可以消除影响氧化物半导体层中的载流子浓度的杂质，例如氢原子或含有氢原子如H 2 O的化合物。 可以与氧化物半导体层接触形成含有大量缺陷的氧化物绝缘层，例如悬挂键，使得杂质扩散到氧化物绝缘层中，并且氧化物半导体层中的杂质浓度降低。 与氧化物半导体层接触的氧化物半导体层或氧化物绝缘层可以在使用低温泵抽真空的沉积室中形成，从而杂质浓度降低。

公开(公告)号：US08901552B2

公开(公告)日：2014-12-02

申请号：US13226713

申请日：2011-09-07

申请人： Shunpei Yamazaki ,  Yusuke Nonaka ,  Takayuki Inoue ,  Masashi Tsubuku ,  Kengo Akimoto ,  Akiharu Miyanaga

发明人： Shunpei Yamazaki ,  Yusuke Nonaka ,  Takayuki Inoue ,  Masashi Tsubuku ,  Kengo Akimoto ,  Akiharu Miyanaga

IPC分类号： H01L29/12 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L27/01 ,  H01L27/12 ,  H01L21/02 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/04 ,  H01L29/24 ,  H01L29/78603

摘要： An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

摘要翻译： 本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。 通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（ 使用第一材料膜作为核的结晶氧化物半导体膜）。 作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

公开(公告)号：US08766250B2

公开(公告)日：2014-07-01

申请号：US12950186

申请日：2010-11-19

申请人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

发明人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L29/10 ,  H01L29/41733

摘要： A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.

摘要翻译： 提供了包括具有良好电特性的氧化物半导体的薄膜晶体管。 薄膜晶体管包括设置在基板上的栅极电极，设置在栅极上的栅极绝缘膜，设置在栅电极和栅极绝缘膜上的氧化物半导体膜，设置在氧化物半导体膜上的金属氧化物膜， 以及设置在金属氧化物膜上的金属膜。 氧化物半导体膜与金属氧化物膜接触，并且包括金属的浓度高于氧化物半导体膜中的任何其它区域（高金属浓度区域）的区域。 在高金属浓度区域中，包含在氧化物半导体膜中的金属可以作为晶粒或微晶存在。

公开(公告)号：US08669556B2

公开(公告)日：2014-03-11

申请号：US13307398

申请日：2011-11-30

申请人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Hiroki Ohara ,  Tatsuya Honda ,  Takatsugu Omata ,  Yusuke Nonaka ,  Masahiro Takahashi ,  Akiharu Miyanaga

发明人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Hiroki Ohara ,  Tatsuya Honda ,  Takatsugu Omata ,  Yusuke Nonaka ,  Masahiro Takahashi ,  Akiharu Miyanaga

IPC分类号： H01L29/04

CPC分类号： H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.

摘要翻译： 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。