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    Semiconductor memory device and connection method thereof
    1.
    发明申请
    Semiconductor memory device and connection method thereof 审中-公开
    半导体存储器件及其连接方法

    公开(公告)号：US20080037310A1

    公开(公告)日：2008-02-14

    申请号：US11821830

    申请日：2007-06-26

    申请人： Akihiro Kasahara ,  Hiroshi Suu ,  Akira Miura ,  Shinji Saito

    发明人： Akihiro Kasahara ,  Hiroshi Suu ,  Akira Miura ,  Shinji Saito

    IPC分类号： G11C5/06

    CPC分类号： G06K19/07 ,  G06K19/07732

    摘要： A semiconductor memory device comprising a substrate, a memory electrically connected to the substrate, a first and a second transmission/reception units transmitting a signal supplied by the memory and receiving a signal to be supplied to the memory, both arranged on a surface of the substrate, a branch circuit which is electrically connected to the first and the second transmission/reception units, and electrically discriminates the second transmission/reception unit from the memory, and a conversion circuit which converts the signal between the branch circuit and the memory into a signal in a predetermined format.

    摘要翻译： 一种半导体存储器件，包括衬底，与衬底电连接的存储器，第一和第二发送/接收单元，发送由存储器提供的信号并接收要提供给存储器的信号，两者布置在 基板，电连接到第一和第二发送/接收单元的分支电路，并且将第二发送/接收单元与存储器进行电鉴别;以及转换电路，其将分支电路和存储器之间的信号转换为 信号以预定的格式。

    Memory system
    2.
    发明申请
    Memory system 审中-公开
    内存系统

    公开(公告)号：US20080005590A1

    公开(公告)日：2008-01-03

    申请号：US11810234

    申请日：2007-06-05

    申请人： Akihiro Kasahara ,  Hiroshi Suu ,  Akira Miura ,  Shinji Saito ,  Hiroyuki Sakamoto

    发明人： Akihiro Kasahara ,  Hiroshi Suu ,  Akira Miura ,  Shinji Saito ,  Hiroyuki Sakamoto

    IPC分类号： G06F12/14

    CPC分类号： G06F21/10

    摘要： A memory system receives data from a host device which requests data write, supplies data to a host device which requests data read, and includes a nonvolatile semiconductor memory and a controller. The memory stores supplied data, and outputs data stored in a designated address. The controller supplies the memory with data in an encrypted form in accordance with a DRM technique employed by a host device which requests data write, and outputs data in an encrypted form in accordance with a DRM technique employed by a host device which requests data read.

    摘要翻译： 存储器系统从请求数据写入的主机装置接收数据，向请求数据读取的主机装置提供数据，并且包括非易失性半导体存储器和控制器。 存储器存储提供的数据，并输出存储在指定地址中的数据。 控制器根据由请求数据写入的主机设备使用的DRM技术以加密形式向存储器提供数据，并且根据请求数据读取的主机设备使用的DRM技术以加密形式输出数据。

    Conductive member
    3.
    发明授权
    Conductive member 有权
    导电部件

    公开(公告)号：US09070487B2

    公开(公告)日：2015-06-30

    申请号：US13977968

    申请日：2011-12-26

    申请人： Takashi Kayamoto ,  Shinji Saito ,  Yuichiro Yamauchi

    发明人： Takashi Kayamoto ,  Shinji Saito ,  Yuichiro Yamauchi

    IPC分类号： B32B15/00 ,  H01B5/02 ,  C23C24/04 ,  H01B1/02

    CPC分类号： H01B5/02 ,  C23C24/04 ,  H01B1/02

    摘要： A conductive member disposed as a power supply line and the like includes: a first conductive material and a second conductive material, at least one of which includes a conductive material having electrical resistance lower than that of aluminum; and a metal film formed by depositing powder including a metal, which is accelerated together with a gas and sprayed, in a sold state, onto a surface of a butting part, where the first conductive material and the second conductive material are butted against each other.

    摘要翻译： 设置为电源线等的导电部件包括：第一导电材料和第二导电材料，其至少一个包括具有比铝的电阻低的导电材料; 以及金属膜，其通过沉积包括金属的粉末形成，所述金属与气体一起被加速并以销售状态喷射到对接部分的表面上，其中所述第一导电材料和所述第二导电材料彼此抵接 。

    Ceramic member, probe holder, and method of manufacturing ceramic member
    4.
    发明授权
    Ceramic member, probe holder, and method of manufacturing ceramic member 有权
    陶瓷构件，探针架，以及陶瓷构件的制造方法

    公开(公告)号：US08806969B2

    公开(公告)日：2014-08-19

    申请号：US12309537

    申请日：2007-07-23

    申请人： Shinya Miyaji ,  Shinji Saito

    发明人： Shinya Miyaji ,  Shinji Saito

    IPC分类号： C03C10/00 ,  G01D21/00

    CPC分类号： G01R3/00 ,  C04B35/20 ,  C04B35/645 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/652 ,  C04B2235/656 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/787 ,  C04B2235/9607 ,  G01R1/07314 ,  G01R1/07371 ,  G01R1/44

    摘要： To provide a ceramic member having a thermal expansion coefficient close to that of silicon and has satisfactory workability, a probe holder formed by using this ceramic member, and a method of manufacturing the ceramic member. For this purpose, at least mica and silicon dioxide are mixed and an external force oriented in one direction is caused to act on this mixed mixture to sinter the mixture. It is more preferable that, in the mixture, a volume content of the mica is 70 to 90 volume % and a volume content of the silicon dioxide is 10 to 30 volume %.

    摘要翻译： 为了提供具有接近于硅的热膨胀系数的陶瓷构件，并且具有令人满意的可加工性，通过使用该陶瓷构件形成的探针保持架以及陶瓷构件的制造方法。 为此目的，至少将云母和二氧化硅混合，并使在一个方向上取向的外力作用于该混合混合物以烧结混合物。 更优选的是，在混合物中，云母的体积含量为70〜90体积％，二氧化硅的体积含量为10〜30体积％。

    Liquid crystal display device
    5.
    发明授权
    Liquid crystal display device 失效
    液晶显示装置

    公开(公告)号：US08520167B2

    公开(公告)日：2013-08-27

    申请号：US13038728

    申请日：2011-03-02

    申请人： Shinji Saito ,  Yasushi Hattori ,  Shinya Nunoue

    发明人： Shinji Saito ,  Yasushi Hattori ,  Shinya Nunoue

    IPC分类号： G02F1/1335 ,  F21V7/00 ,  F21V11/00

    CPC分类号： G02B6/0055 ,  G02B5/0215 ,  G02B5/0231 ,  G02B5/0284 ,  G02B6/0096 ,  G02F1/133606 ,  G02F1/133615

    摘要： A liquid crystal display device of an embodiment has: a semiconductor laser diode emitting a first laser beam; a first reflecting unit configured to reflect the first laser beam and form a second laser beam having a one-dimensionally spread distribution; and a second reflecting unit configured to reflect the second laser beam and form a third laser beam having a two-dimensionally spread distribution. The device also has: an optical switch using liquid crystal, the optical switch being configured to control passage and blocking of the third laser beam; and a first scattering unit scattering the third laser beam.

    摘要翻译： 实施例的液晶显示装置具有：发射第一激光束的半导体激光二极管; 第一反射单元，被配置为反射第一激光束并形成具有一维扩展分布的第二激光束; 以及第二反射单元，被配置为反射第二激光束并形成具有二维扩散分布的第三激光束。 该装置还具有：使用液晶的光开关，该光开关被配置为控制第三激光束的通过和阻塞; 以及散射第三激光束的第一散射单元。

    Semiconductor light-emitting element and manufacturing method thereof
    7.
    发明授权
    Semiconductor light-emitting element and manufacturing method thereof 有权
    半导体发光元件及其制造方法

    公开(公告)号：US08354681B2

    公开(公告)日：2013-01-15

    申请号：US11689246

    申请日：2007-03-21

    申请人： Yasushi Hattori ,  Shinya Nunoue ,  Shinji Saito ,  Genichi Hatakoshi

    发明人： Yasushi Hattori ,  Shinya Nunoue ,  Shinji Saito ,  Genichi Hatakoshi

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/382 ,  H01L33/46 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014

    摘要： A semiconductor light-emitting element including a semiconductor substrate having a first surface and second surface faced on the opposite side of the first surface, the semiconductor substrate having a recessed portion formed in the first surface, and the recessed portion having a V-shaped cross-section, a reflecting layer formed on an inner surface of the recessed portion, a first electrode formed on the reflecting layer, a light-emitting layer formed on the second surface, and a second electrode formed on the light-emitting layer.

    摘要翻译： 一种半导体发光元件，包括具有第一表面和第二表面的半导体衬底，所述第一表面和第二表面面对所述第一表面的相对侧，所述半导体衬底具有形成在所述第一表面中的凹部，所述凹部具有V形十字 形成在所述凹部的内表面上的反射层，形成在所述反射层上的第一电极，形成在所述第二表面上的发光层，以及形成在所述发光层上的第二电极。

    Light emitting device
    8.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08348468B2

    公开(公告)日：2013-01-08

    申请号：US12876738

    申请日：2010-09-07

    申请人： Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Masaki Tohyama

    发明人： Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Masaki Tohyama

    IPC分类号： F21V11/02

    CPC分类号： F21K9/64 ,  F21K9/232 ,  F21V3/00 ,  F21Y2101/00 ,  F21Y2115/30

    摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to emit visible light in a wide range. The light emitting device includes a semiconductor laser diode that emits a laser beam; and a luminescent component that is provided while separated from the semiconductor laser diode and absorbs the laser beam to emit the visible light. In the light emitting device, the luminescent component includes an optical path through which the laser beam is incident to a center portion of the luminescent component.

    摘要翻译： 本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源来发射宽范围的可见光。 发光器件包括发射激光束的半导体激光二极管; 以及与半导体激光二极管分离并吸收激光束以发出可见光的发光元件。 在发光装置中，发光部件包括激光束入射到发光部件的中心部分的光路。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    9.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20120007113A1

    公开(公告)日：2012-01-12

    申请号：US13032907

    申请日：2011-02-23

    申请人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

    发明人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

    IPC分类号： H01L33/26

    CPC分类号： H01L33/06 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.

    摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。 阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。 含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。 中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。 第一部分的带隙能量小于第二部分的带隙能量。