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    Method of separating optical isomers through supercritical fluid chromatography
    1.
    发明申请
    Method of separating optical isomers through supercritical fluid chromatography 审中-公开
    通过超临界流体色谱分离光学异构体的方法

    公开(公告)号：US20060266709A1

    公开(公告)日：2006-11-30

    申请号：US11494644

    申请日：2006-07-28

    申请人： Akihiro Matabe ,  Hirofumi Oda ,  Takeshi Ishiguro

    发明人： Akihiro Matabe ,  Hirofumi Oda ,  Takeshi Ishiguro

    IPC分类号： B01D15/08

    CPC分类号： B01D15/3833 ,  B01D15/40 ,  G01N30/02

    摘要： A supercritical fluid chromatography using a column using a column having an optical isomer separating agent containing a polysaccharide derivative capable of optical isomer separation, wherein use is made of a mobile phase containing a supercritical fluid and wherein as the optical isomer separating agent received in the column to conduct optical isomer separation, an optical separating agent containing a polysaccharide derivative capable of optical isomer separation in an amount of 50% by mass or more based on the entirety of the optical isomer separating agent is used to thereby, even in the use of optical isomer separating agent with a multiplicity of identification sites, enable accomplishing excellent separation of optical isomers.

    摘要翻译： 使用具有含有能够进行光学异构体分离的多糖衍生物的光学异构体分离剂的柱的柱的超临界流体色谱法，其中使用含有超临界流体的流动相，其中作为在柱中接受的旋光异构体分离剂 为了进行光学异构体分离，使用含有以光学异构体分离剂的全部为50质量％以上的能够进行光学异构体分离的多糖衍生物的光学分离剂，由此即使在使用光学 具有多个鉴定位点的异构体分离剂，能够实现光学异构体的优异分离。

    Trench depth monitor for semiconductor manufacturing
    3.
    发明授权
    Trench depth monitor for semiconductor manufacturing 有权
    沟槽深度监测器用于半导体制造

    公开(公告)号：US07795045B2

    公开(公告)日：2010-09-14

    申请号：US12371021

    申请日：2009-02-13

    申请人： Hugh J. Griffin ,  Takeshi Ishiguro ,  Kenji Sugiura

    发明人： Hugh J. Griffin ,  Takeshi Ishiguro ,  Kenji Sugiura

    IPC分类号： H01L21/00 ,  G01R31/26

    CPC分类号： H01L22/12 ,  B81B2203/033 ,  B81C1/00619 ,  B81C99/0065 ,  B81C2201/0138 ,  H01L21/3065 ,  H01L22/26 ,  H01L29/0634 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/00

    摘要： A method of manufacturing a semiconductor wafer having at least one device trench extending to a first depth position includes providing a semiconductor substrate having first and second main surfaces and a semiconductor material layer having first and second main surfaces disposed on the first main surface of the semiconductor substrate and determining an etch ratio. The least one device trench and at least one monitor trench are simultaneously formed in the first main surface of the semiconductor material layer. The at least one monitor trench is monitored to detect when it extends to a second depth position. A ratio of the first depth position to the second depth position is generally equal to the etch ratio.

    摘要翻译： 制造具有延伸到第一深度位置的至少一个器件沟槽的半导体晶片的方法包括提供具有第一和第二主表面的半导体衬底和具有设置在半导体的第一主表面上的第一和第二主表面的半导体材料层 衬底并确定蚀刻比。 在半导体材料层的第一主表面中同时形成至少一个器件沟槽和至少一个监测沟槽。 监视至少一个监视器沟槽以检测其何时延伸到第二深度位置。 第一深度位置与第二深度位置的比率通常等于蚀刻比。

    MULTI-ANGLE ROTATION FOR ION IMPLANTATION OF TRENCHES IN SUPERJUNCTION DEVICES
    5.
    发明申请
    MULTI-ANGLE ROTATION FOR ION IMPLANTATION OF TRENCHES IN SUPERJUNCTION DEVICES 有权
    用于在超级设备中离子植入的多角度旋转

    公开(公告)号：US20090200634A1

    公开(公告)日：2009-08-13

    申请号：US12371025

    申请日：2009-02-13

    申请人： Takeshi Ishiguro ,  Hugh J. Griffin ,  Kenji Sugiura

    发明人： Takeshi Ishiguro ,  Hugh J. Griffin ,  Kenji Sugiura

    IPC分类号： H01L23/58 ,  H01L21/425

    CPC分类号： H01L21/26586 ,  H01L29/045 ,  H01L29/0634

    摘要： A method of manufacturing a semiconductor device includes providing a semiconductor wafer and forming at least one first trench in the wafer having first and second sidewalls and a first orientation on the wafer. The first sidewall of the at least one first trench is implanted with a dopant of a first conductivity at a first implantation direction. The first sidewall of the at least one first trench is implanted with the dopant of the first conductivity at a second implantation direction. The second implantation direction is orthogonal to the first implantation direction. The first and second implantation directions are non-orthogonal to the first sidewall.

    摘要翻译： 一种制造半导体器件的方法包括提供半导体晶片并且在晶片中形成具有第一和第二侧壁的晶片中的至少一个第一沟槽和在晶片上的第一取向。 所述至少一个第一沟槽的第一侧壁在第一注入方向上注入具有第一导电性的掺杂剂。 至少一个第一沟槽的第一侧壁在第二植入方向上注入第一导电性的掺杂剂。 第二注入方向与第一注入方向正交。 第一和第二注入方向与第一侧壁不正交。

    Method of forming a semiconductor device and structure therefor
    7.
    发明授权
    Method of forming a semiconductor device and structure therefor 有权
    形成半导体器件的方法及其结构

    公开(公告)号：US06613622B1

    公开(公告)日：2003-09-02

    申请号：US10194165

    申请日：2002-07-15

    申请人： Rajesh S. Nair ,  Takeshi Ishiguro

    发明人： Rajesh S. Nair ,  Takeshi Ishiguro

    IPC分类号： H01L21337

    CPC分类号： H01L29/7835 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/78 ,  H01L29/7801

    摘要： A semiconductor device (10, 40) is formed to have a well (19) in a substrate (11). The well and the substrate have the same doping type, for example both P-type or both N-type. Low resistance contact regions (26, 27) of a second conductivity type are formed to at least abut the well. A drain (17) is formed within one low resistance contact region. A source (12) is formed in the substrate and laterally displaced from the other low resistance contact region. A buried layer (21, 22, 23) is formed laterally across the well.

    摘要翻译： 半导体器件（10,40）形成为在衬底（11）中具有阱（19）。 阱和衬底具有相同的掺杂类型，例如P型或N型两者。 形成第二导电类型的低电阻接触区域（26,27）以至少邻接阱。 漏极（17）形成在一个低电阻接触区域内。 源（12）形成在基板中并且从另一个低电阻接触区域横向移位。 掩埋层（21,22,23）横跨井形成。

    Multi-directional trenching of a die in manufacturing superjunction devices
    8.
    发明授权
    Multi-directional trenching of a die in manufacturing superjunction devices 有权
    在制造超结装置中的模具的多方向开槽

    公开(公告)号：US09543380B2

    公开(公告)日：2017-01-10

    申请号：US13169378

    申请日：2011-06-27

    申请人： Takeshi Ishiguro ,  Kenji Sugiura ,  Hugh J. Griffin

    发明人： Takeshi Ishiguro ,  Kenji Sugiura ,  Hugh J. Griffin

    IPC分类号： H01L29/02 ,  H01L29/06

    CPC分类号： H01L29/0634

    摘要： A method of manufacturing a superjunction device includes providing a semiconductor wafer having at least one die. At least one first trench having a first orientation is formed in the at least one die. At least one second trench having a second orientation that is different from the first orientation is formed in the at least one die.

    摘要翻译： 制造超结装置的方法包括提供具有至少一个管芯的半导体晶片。 在至少一个管芯中形成具有第一取向的至少一个第一沟槽。 在至少一个管芯中形成具有不同于第一取向的第二取向的至少一个第二沟槽。

    Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
    9.
    发明授权
    Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material 有权
    制造具有热敏补充材料的沟槽型半导体器件的方法

    公开(公告)号：US08580651B2

    公开(公告)日：2013-11-12

    申请号：US11962523

    申请日：2007-12-21

    申请人： Takeshi Ishiguro

    发明人： Takeshi Ishiguro

    IPC分类号： H01L21/762

    CPC分类号： H01L29/66712 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0653

    摘要： Methods for manufacturing trench type semiconductor devices involve refilling the trenches after high temperature processing steps are performed. The methods allow thermally unstable materials to be used as refill materials for the trenches of the device. Trench type semiconductor devices containing thermally unstable refill materials are also provided. In particular, methods of manufacturing and devices of a trench type semiconductor devices containing organic refill materials are provided.

    摘要翻译： 用于制造沟槽型半导体器件的方法包括在执行高温处理步骤之后重新填充沟槽。 该方法允许热不稳定材料用作装置沟槽的补充材料。 还提供了包含热不稳定填充材料的沟槽型半导体器件。 特别地，提供了制造方法和包含有机填充材料的沟槽型半导体器件的器件。