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23 条记录 (耗时 0.015 秒)

    Photochemical method to eliminate oxygen inhibition of free radical polymerizations
    1.
    发明授权
    Photochemical method to eliminate oxygen inhibition of free radical polymerizations 失效
    消除氧自由基聚合抑制的光化学方法

    公开(公告)号：US07141615B2

    公开(公告)日：2006-11-28

    申请号：US10752778

    申请日：2004-01-07

    申请人： Alec Scranton ,  Lijing Gou

    发明人： Alec Scranton ,  Lijing Gou

    IPC分类号： C08F2/46

    CPC分类号： C08F2/38 ,  B33Y70/00 ,  C08F2/48 ,  C08F2/50 ,  C08F4/50 ,  Y10S522/902

    摘要： Compositions and methods for addressing oxygen inhibition in free radical polymerization systems and determination of oxygen content in a monomer or oligomer. The compositions used include a singlet oxygen generator and a singlet oxygen trapper. Addition of the generator and trapper resulting in removal of oxygen can occur before polymerization or essentially simultaneously with polymerization. Determination of oxygen content comprises monitoring the concentration changes from the reaction of the singlet oxygen trapper with the oxygen in the system.

    摘要翻译： 用于解决自由基聚合体系中的氧抑制和测定单体或低聚物中氧含量的组合物和方法。 所用的组合物包括单线态氧气发生器和单线态氧捕集器。 发生器和捕集器的添加导致氧气的除去可以在聚合之前或基本上与聚合同时发生。 氧含量的测定包括监测系统中单重态捕集器与氧气反应的浓度变化。

    Apparatuses and devices for absorbing electromagnetic radiation, and methods of forming the apparatuses and devices
    2.
    发明授权
    Apparatuses and devices for absorbing electromagnetic radiation, and methods of forming the apparatuses and devices 有权
    用于吸收电磁辐射的装置和装置，以及形成装置和装置的方法

    公开(公告)号：US08797662B2

    公开(公告)日：2014-08-05

    申请号：US12967733

    申请日：2010-12-14

    申请人： Yongjun Jeff Hu ,  Allen McTeer ,  Lijing Gou

    发明人： Yongjun Jeff Hu ,  Allen McTeer ,  Lijing Gou

    IPC分类号： G02B5/22 ,  G02B5/20 ,  B82Y20/00

    CPC分类号： G02B5/201 ,  B82Y20/00 ,  G02B5/003 ,  Y10S977/707 ,  Y10S977/762 ,  Y10S977/773 ,  Y10S977/834 ,  Y10S977/954

    摘要： Photonic nanostructures, light absorbing apparatuses, and devices are provided. The photonic nanostructures include a plurality of photonic nanobars configured to collectively absorb light over an excitation wavelength range. At least two of the photonic nanobars of the plurality have lengths that are different from one another. Each photonic nanobar of the plurality has a substantially small width and a substantially small height relative to the different lengths. A method for forming such may comprise forming a plurality of first photonic nanobars comprising a width and a height that are smaller than a length of the plurality of first photonic nanobars, and forming a plurality of second photonic nanobars comprising a width and a height that are smaller than a length of the second photonic nanobar, wherein the lengths of the plurality of first photonic nanobars and the lengths of the plurality of second photonic nanobars are different from one another.

    摘要翻译： 提供光子纳米结构，光吸收装置和装置。 光子纳米结构包括配置成在激发波长范围内共同吸收光的多个光子纳米结构。 多个光子纳米棒中的至少两个具有彼此不同的长度。 多个的每个光子纳米棒相对于不同的长度具有基本上小的宽度和基本上小的高度。 用于形成其的方法可以包括形成多个第一光子纳米条，其包括小于多个第一光子纳米条的长度的宽度和高度，以及形成多个第二光子纳米条，其包括宽度和高度 小于第二光子纳米棒的长度，其中多个第一光子纳米棒的长度和多个第二光子纳米棒的长度彼此不同。

    Methods of lithographically patterning a substrate
    3.
    发明授权
    Methods of lithographically patterning a substrate 失效
    平版印刷基板的方法

    公开(公告)号：US08309297B2

    公开(公告)日：2012-11-13

    申请号：US11868328

    申请日：2007-10-05

    申请人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

    发明人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

    IPC分类号： G03F7/22

    CPC分类号： G03F7/2022 ,  G03F7/203

    摘要： A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.

    摘要翻译： 光刻图案化具有去除区域和非去除区域的光致抗蚀剂的基板的方法包括首先将至少不去除区域暴露于有效地增加非去除区域中的光致抗蚀剂的外表面粗糙度至少后显影 但是在用显影剂显影时，光致抗蚀剂的显影剂中的光致抗蚀剂溶解度无法改变，以从非去除区域中清除。 进行辐射到去除区域的第二次曝光是有效的，以改变光致抗蚀剂在显影剂中的溶解度，以使光致抗蚀剂在用显影剂显影时从除去区域中清除。 用显影剂显影光致抗蚀剂有效地从去除区域清除光致抗蚀剂，并且在非去除区域中留下光致抗蚀剂，其在非去除区域中的外表面粗糙度大于第一次曝光之前的表面粗糙度。 预期其他实现和实施例。

    Semiconductor constructions and methods of forming patterns
    6.
    发明授权
    Semiconductor constructions and methods of forming patterns 有权
    半导体结构和形成图案的方法

    公开(公告)号：US08486611B2

    公开(公告)日：2013-07-16

    申请号：US12836495

    申请日：2010-07-14

    申请人： Dan Millward ,  Kaveri Jain ,  Zishu Zhang ,  Lijing Gou ,  Anton de Villiers ,  Jianming Zhou ,  Yuan He ,  Michael Hyatt ,  Scott L. Light

    发明人： Dan Millward ,  Kaveri Jain ,  Zishu Zhang ,  Lijing Gou ,  Anton de Villiers ,  Jianming Zhou ,  Yuan He ,  Michael Hyatt ,  Scott L. Light

    IPC分类号： G03F7/26

    CPC分类号： H01L21/76879 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10882 ,  H01L27/10888

    摘要： Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.

    摘要翻译： 一些实施例包括形成图案的方法。 半导体衬底被形成为在一组导电结构之上包括电绝缘材料。 跨导电结构限定互连区域，并且互连区域的相对侧上的区域被定义为次级区域。 特征的二维阵列形成在电绝缘材料上。 二维阵列跨越互连区域并跨越次级区域延伸。 二维阵列的图案通过互连区域的电绝缘材料转移以形成延伸穿过电绝缘材料和导电结构的接触开口，并且二次区域的二维阵列的任何部分 被转移到电绝缘材料中。

    APPARATUSES AND DEVICES FOR ABSORBING ELECTROMAGNETIC RADIATION, AND METHODS OF FORMING THE APPARATUSES AND DEVICES
    7.
    发明申请
    APPARATUSES AND DEVICES FOR ABSORBING ELECTROMAGNETIC RADIATION, AND METHODS OF FORMING THE APPARATUSES AND DEVICES 有权
    用于吸收电磁辐射的装置和装置，以及形成装置和装置的方法

    公开(公告)号：US20120154919A1

    公开(公告)日：2012-06-21

    申请号：US12967733

    申请日：2010-12-14

    申请人： Yongjun Jeff Hu ,  Allen McTeer ,  Lijing Gou

    发明人： Yongjun Jeff Hu ,  Allen McTeer ,  Lijing Gou

    IPC分类号： G02B27/00 ,  B28B11/08 ,  C23F1/00 ,  B82Y20/00

    CPC分类号： G02B5/201 ,  B82Y20/00 ,  G02B5/003 ,  Y10S977/707 ,  Y10S977/762 ,  Y10S977/773 ,  Y10S977/834 ,  Y10S977/954

    摘要： Photonic nanostructures, light absorbing apparatuses, and devices are provided. The photonic nanostructures include a plurality of photonic nanobars configured to collectively absorb light over an excitation wavelength range. At least two of the photonic nanobars of the plurality have lengths that are different from one another. Each photonic nanobar of the plurality has a substantially small width and a substantially small height relative to the different lengths. A method for forming such may comprise forming a plurality of first photonic nanobars comprising a width and a height that are smaller than a length of the plurality of first photonic nanobars, and forming a plurality of second photonic nanobars comprising a width and a height that are smaller than a length of the second photonic nanobar, wherein the lengths of the plurality of first photonic nanobars and the lengths of the plurality of second photonic nanobars are different from one another.

    摘要翻译： 提供光子纳米结构，光吸收装置和装置。 光子纳米结构包括配置成在激发波长范围内共同吸收光的多个光子纳米结构。 多个光子纳米棒中的至少两个具有彼此不同的长度。 多个的每个光子纳米棒相对于不同的长度具有基本上小的宽度和基本上小的高度。 用于形成其的方法可以包括形成多个第一光子纳米条，其包括小于多个第一光子纳米条的长度的宽度和高度，以及形成多个第二光子纳米条，其包括宽度和高度 小于第二光子纳米棒的长度，其中多个第一光子纳米棒的长度和多个第二光子纳米棒的长度彼此不同。

    LENS HEATING COMPENSATION IN PHOTOLITHOGRAPHY
    8.
    发明申请
    LENS HEATING COMPENSATION IN PHOTOLITHOGRAPHY 有权
    透镜加热补偿

    公开(公告)号：US20120038895A1

    公开(公告)日：2012-02-16

    申请号：US12857316

    申请日：2010-08-16

    申请人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan Millward

    发明人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan Millward

    IPC分类号： G03B27/54 ,  G03B27/32

    CPC分类号： G03F7/70116 ,  G03F7/70891

    摘要： Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.

    摘要翻译： 公开了光刻设备和方法。 一种这样的设备包括光路，其被配置为在光学系统的一部分中提供第一衍射图案，并且在提供第一衍射图案之后，向光学系统的部分提供第二衍射图案。 同时，一种这样的方法包括在光学系统的一部分上提供第一衍射图案，其中半导体制品使用第一衍射图案成像。 第二衍射图案也提供到光学系统的部分上，但是第二衍射图案不用于对半导体制品进行成像。

    Lens heating compensation in photolithography
    9.
    发明授权
    Lens heating compensation in photolithography 有权
    光刻镜头加热补偿

    公开(公告)号：US09235134B2

    公开(公告)日：2016-01-12

    申请号：US12857316

    申请日：2010-08-16

    申请人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan Millward

    发明人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan Millward

    IPC分类号： G03B27/42 ,  G03F7/20

    CPC分类号： G03F7/70116 ,  G03F7/70891

    摘要： Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.

    摘要翻译： 公开了光刻设备和方法。 一种这样的设备包括光路，其被配置为在光学系统的一部分中提供第一衍射图案，并且在提供第一衍射图案之后，向光学系统的部分提供第二衍射图案。 同时，一种这样的方法包括在光学系统的一部分上提供第一衍射图案，其中半导体制品使用第一衍射图案成像。 第二衍射图案也提供到光学系统的部分上，但是第二衍射图案不用于对半导体制品进行成像。