摘要:
Circuitry (46, or 28 and 70) for thermally separating a power integrated circuit device (12) from a plurality of other such devices (14, 16, and 18) on a common power integrated circuit chip (10) operate when the device (12) reaches a thermal shutdown temperature setpoint (56) with an output current at a predetermined current limit (54). The circuitry 46, or 28 and 70 switches the output current to a shutdown current level (57) until the device (12) reaches a predetermined lower temperature setpoint (58). Circuitry (46, or 28 and 70) restores the output current level to the predetermined current limit only after the device (12) reaches both the predetermined lower temperature setpoint (58) and a predetermined circuit setpoint (62 or 74). The circuit setpoint (62 or 74) associates with the temperature of the device (12) and may be either a yet lower temperature setpoint (62) or a specified time delay (74). The above steps are repeated to lower the average temperature of the device (12) and thereby thermally separate the device (12) from the other of such devices (14, 16 and 18) on the common power integrated circuit chip (10).
摘要:
A method and apparatus for programmable current limits is provided in which a plurality of current limit programmable cells (44 and 46) are programmed with a current limit. Output circuitry (14 and 16) which outputs current is limited by current limit circuitry (20, 24, 38, 40, and 42) when the output current reaches the programmed current limit.
摘要:
A circuit for reducing jitter in a digital signal is provided, comprising a clock and data recovery stage operative to receive an input data signal and generate in response thereto a recovered data signal, a recovered clock signal, and an unfiltered interpolator code; a filter stage operative to receive the unfiltered interpolator code and generate in response thereto a filtered clock signal; and a memory component operative to receive the recovered data signal, the recovered clock signal, and the filtered clock signal; sample the recovered data signal using the recovered clock signal; store the resulting sampled bits; and generate an output data signal by selecting stored bits using the filtered clock signal.
摘要:
The disclosure provides granular forms of porous biomaterials and methods for forming and applying these biomaterials, including uses to promote vascularization and tissue ingrowth.
摘要:
A turbofan engine comprising an annular inner wall surrounding tips of the fan blades, a layer of insulating material surrounding the inner wall, and an outer casing including an annular outer wall surrounding the insulating material and concentric to the inner wall and at least two annular rub elements extending radially inwardly from the outer wall through only part of a radial thickness of the layer of insulating material, at least two of the rub elements being in axial alignment with the blade tips at every point around a circumference of the fan, each rub element having a radially inner end spaced apart from the inner wall and made of a material harder than that of the blades, and a containment fabric layer wrapped around a support structure of the outer wall.
摘要:
The invention provides crosslinked porous biomaterials and methods for forming crosslinked porous biomaterials. The crosslinked porous biomaterials of the invention comprise a biocompatible polymer scaffold defining an array of pores, wherein substantially all the pores have a similar diameter, wherein the mean diameter of the pores is between about 20 and about 90 micrometers, wherein substantially all the pores are each connected to at least 4 other pores, and wherein the diameter of substantially all the connections between the pores is between about 15% and about 40% of the mean diameter of the pores. The invention also provides implantable devices comprising a layer of a biomaterial, and methods for promoting angiogenesis in and around an implantable biomaterial.
摘要:
Circuitry and methods for measuring capacitive mismatch with improved precision. The capacitors under measurement are connected in series in a voltage divider, with the node common to both capacitors connected to the gate of a source follower transistor. In one disclosed embodiment of the invention, a ramped voltage is applied to the drain of the source follower transistor simultaneously with the ramped voltage applied to the voltage divider; the slope of the ramped drain voltage is at the nominal slope of the voltage at the common node of the voltage divider. In another embodiment, a second transistor in saturation has its gate coupled to the source of the source follower device, and its source connected to the drain of the source follower device in series with a constant voltage drop. The drain-to-source voltage of the source follower device is thus held constant in each embodiment, improving precision of the measurement.
摘要:
Apparatus and methods are disclosed for examining how reliability in an RF power amplifier circuit changes as a function of variation of the input to output voltage swings. Two output transistors that varying greatly in the size of their respective channel widths are provided for independently evaluating impacts on the output waveform. The gate control for the smaller transistor is separate from the gate control to the larger transistor. The gate and drain stress can thus be adjusted and evaluated independently.
摘要:
An integrated circuit (IC) includes at least one memory array having a plurality of memory cells arranged in a plurality of rows and columns, the array also having a plurality of word lines for accessing rows of cells and a plurality bit lines for accessing columns of cells. A voltage differential generating circuit is operable to provide a differential wordline voltage (VWL) relative to an array supply voltage, wherein the differential is a function of the array supply voltage.
摘要:
A method of forming a single wall thickness (SWT) carbon nanotube (CNT) transistor with a controlled diameter and chirality is disclosed. A photolithographically defined single crystal silicon seed layer is converted to a single crystal silicon carbide seed layer. A single layer of graphene is formed on the top surface of the silicon carbide. The SWT CNT transistor body is grown from the graphene layer in the presence of carbon containing gases and metal catalyst atoms. Silicided source and drain regions at each end of the silicon carbide seed layer provide catalyst metal atoms during formation of the CNT. The diameter of the SWT CNT is established by the width of the patterned seed layer. A conformally deposited gate dielectric layer and a transistor gate over the gate dielectric layer complete the CNT transistor. CNT transistors with multiple CNT bodies, split gates and varying diameters are also disclosed.