公开(公告)号：US6054349A

公开(公告)日：2000-04-25

申请号：US95883

申请日：1998-06-11

申请人： Anri Nakajima ,  Naoto Horiguchi ,  Hiroshi Nakao

发明人： Anri Nakajima ,  Naoto Horiguchi ,  Hiroshi Nakao

IPC分类号： G11C11/56 ,  H01L49/00 ,  H01L21/336

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  G11C11/5671 ,  H01L49/006 ,  G11C2216/08 ,  Y10S438/962

摘要： A single-electron device includes a substrate, an insulating film provided on the substrate, a plurality of nanometer-size conductive particles formed in the insulating film along an interface between the substrate and the insulating film, and an electrode provided on the insulating film, wherein the conductive particles have a generally identical size and arranged substantially in a plane at a depth closer to the substrate.

摘要翻译： 单电子器件包括衬底，设置在衬底上的绝缘膜，沿着衬底和绝缘膜之间的界面形成在绝缘膜中的多个纳米尺寸的导电颗粒，以及设置在绝缘膜上的电极， 其中所述导电颗粒具有大致相同的尺寸并且基本上在更靠近所述基板的深度的平面中布置。

公开(公告)号：US20080106469A1

公开(公告)日：2008-05-08

申请号：US10553994

申请日：2004-03-29

申请人： Takamaro Kikkawa ,  Atsushi Iwata ,  Hideo Sunami ,  Hans Jurgen Mattausch ,  Shin Yokoyama ,  Kentaro Shibahara ,  Anri Nakajima ,  Tetsushi Koide ,  A.B.M. Harun-ur Rashid ,  Shinji Watanabe

发明人： Takamaro Kikkawa ,  Atsushi Iwata ,  Hideo Sunami ,  Hans Jurgen Mattausch ,  Shin Yokoyama ,  Kentaro Shibahara ,  Anri Nakajima ,  Tetsushi Koide ,  A.B.M. Harun-ur Rashid ,  Shinji Watanabe

IPC分类号： H01Q1/38 ,  H01Q9/04

CPC分类号： H01L23/642 ,  H01L23/48 ,  H01L23/5227 ,  H01L2924/0002 ,  H01Q1/38 ,  H01L2924/00

摘要： The present invention provides a semiconductor device in which, in order to prevent wiring delay, an electromagnetic wave is radiated from a transmitting dipole antenna placed on a semiconductor chip and received with a receiving antenna placed in a circuit block included in another semiconductor chip, instead of long metal wires or via-hole interconnection. In the semiconductor device, wireless interconnection is accomplished in such a manner that the electromagnetic wave radiated from the transmitting antenna (3) placed on the semiconductor substrate (1) is transmitted to the receiving antenna (4) placed on the semiconductor substrate (1) or receiving antennas placed on semiconductor substrates; the semiconductor substrates have broadband transmitting/receiving antennas; a signal is transmitted from one or more of the semiconductor substrates and received with the receiving antenna or antennas placed on the semiconductor substrate (1) or substrates, respectively; and the signal transmitted and received has an ultra-wide band communication function.

摘要翻译： 本发明提供了一种半导体器件，其中为了防止布线延迟，电磁波从放置在半导体芯片上的发射偶极子天线辐射并且被放置在包含在另一个半导体芯片中的电路块中的接收天线接收 长金属线或通孔互连。 在半导体装置中，以从放置在半导体基板（1）上的发射天线（3）辐射的电磁波传输到放置在半导体基板（1）上的接收天线（4）的方式实现无线互连， 或接收放置在半导体衬底上的天线; 半导体衬底具有宽带发射/接收天线; 从一个或多个半导体衬底发送信号并分别与放置在半导体衬底（1）或衬底上的接收天线或天线一起接收信号; 并且发送和接收的信号具有超宽带通信功能。

公开(公告)号：US06933249B2

公开(公告)日：2005-08-23

申请号：US10479043

申请日：2002-05-31

申请人： Shin Yokoyama ,  Anri Nakajima ,  Yoshihide Tada ,  Genji Nakamura ,  Masayuki Imai ,  Tsukasa Yonekawa

发明人： Shin Yokoyama ,  Anri Nakajima ,  Yoshihide Tada ,  Genji Nakamura ,  Masayuki Imai ,  Tsukasa Yonekawa

IPC分类号： C23C16/30 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/321 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78 ,  H01L21/31

CPC分类号： H01L21/3185 ,  B82Y10/00 ,  B82Y30/00 ,  C23C16/30 ,  C23C16/345 ,  C23C16/45546 ,  C23C16/56 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/3211 ,  Y10S438/909

摘要： A manufacturing method for semiconductor devices that can improve uniformity in the surface of a silicon nitride film or a nitride film to be formed and improve production efficiency is provided. A step of forming a first film that is a silicon oxide film or a silicon oxynitride film on a silicon substrate, a step of forming a second film that is a tetrachlorosilane monomolecular layer, and a step of forming a third film that is a silicon nitride monomolecular layer by performing a nitriding process on the second film are included. A silicon nitride film having a predetermined film thickness is formed by repeating the step of forming the second film and the step of forming the third film for a predetermined number of times. In a manufacturing apparatus, a plurality of silicon substrates are arranged on a stair-like wafer boat, and a process gas is supplied toward the upper side of a reaction tube from a process gas supply pipe.

摘要翻译： 提供了可以提高氮化硅膜或氮化物膜的表面的均匀性的半导体器件的制造方法，并且提高生产效率。 在硅衬底上形成作为氧化硅膜或氮氧化硅膜的第一膜的步骤，形成作为四氯硅烷单分子层的第二膜的工序，以及形成作为氮化硅的第三膜的工序 包括在第二膜上进行氮化处理的单分子层。 通过重复形成第二膜的步骤和形成第三膜的步骤预定次数来形成具有预定膜厚度的氮化硅膜。 在制造装置中，在台阶状的舟舟上配置多个硅基板，从处理气体供给管朝向反应管的上侧供给处理气体。

公开(公告)号：US06787863B2

公开(公告)日：2004-09-07

申请号：US10437119

申请日：2003-05-14

申请人： Anri Nakajima

发明人： Anri Nakajima

IPC分类号： H01L2976

CPC分类号： H01L29/513 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31604 ,  H01L21/31683 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66181

摘要： A semiconductor device comprising a silicon substrate and an insulating film adjacent thereto and which operates by applying a voltage to an electrode opposed to the silicon substrate with the insulating film interposed between; wherein an intermediate film is contained that is located between the silicon substrate and the insulating film and has a thickness of 0.2-1 nm. A method for manufacturing such a semiconductor device is also disclosed.

摘要翻译： 一种半导体器件，包括硅衬底和与其相邻的绝缘膜，并且通过在介于其间的绝缘膜向与所述硅衬底相对的电极施加电压来操作; 其中包含位于硅衬底和绝缘膜之间的中间膜，其厚度为0.2-1nm。 还公开了一种用于制造这种半导体器件的方法。

公开(公告)号：US6121157A

公开(公告)日：2000-09-19

申请号：US217080

申请日：1998-12-21

申请人： Anri Nakajima

发明人： Anri Nakajima

IPC分类号： H01L27/10 ,  B82B1/00 ,  H01L21/335 ,  H01L29/66 ,  H01L29/788 ,  H01L21/28 ,  H01L21/302 ,  H01L32/13

CPC分类号： B82Y10/00 ,  H01L29/66439 ,  H01L29/7888 ,  Y10S438/957 ,  Y10S438/962

摘要： A substrate has an insulating surface; a fine wire region disposed on the insulating surface of the substrate and extending long in one direction; a first insulating film formed on the fine wire region at least at a partial area along the longitudinal direction of the fine wire region; and a first micro box region formed on the first insulating film over the fine wire region at a partial area along the longitudinal direction of the fine wire region a semiconductor device. The semiconductor device has a fine wire region and a micro box region to realize control of a single electron level. The manufacturing method for the semiconductor device is also disclosed.

摘要翻译： 衬底具有绝缘表面; 细线区域，设置在基板的绝缘表面上并在一个方向上延伸; 至少在细线区域的长度方向的局部区域形成在细线区域上的第一绝缘膜; 以及第一微箱区域，形成在第一绝缘膜上的细线区域上沿着半导体器件的细线区域的纵向方向的部分区域。 半导体器件具有细线区域和微盒区域，以实现单电子电平的控制。 还公开了半导体器件的制造方法。

公开(公告)号：US5886380A

公开(公告)日：1999-03-23

申请号：US819633

申请日：1997-03-17

申请人： Anri Nakajima

发明人： Anri Nakajima

IPC分类号： H01L27/10 ,  B82B1/00 ,  H01L21/335 ,  H01L29/66 ,  H01L29/788 ,  H01L29/06

CPC分类号： B82Y10/00 ,  H01L29/66439 ,  H01L29/7888 ,  Y10S438/957 ,  Y10S438/962

摘要： A substrate has an insulating surface; a fine wire region disposed on the insulating surface of the substrate and extending long in one direction; a first insulating film formed on the fine wire region at least at a partial area along the longitudinal direction of the fine wire region; and a first micro box region formed on the first insulating film over the fine wire region at a partial area along the longitudinal direction of the fine wire region a semiconductor device. The semiconductor device has a fine wire region and a micro box region to realize control of a single electron level. The manufacturing method for the semiconductor device is also disclosed.

摘要翻译： 衬底具有绝缘表面; 细线区域，设置在基板的绝缘表面上并在一个方向上延伸; 至少在细线区域的长度方向的局部区域形成在细线区域上的第一绝缘膜; 以及第一微箱区域，形成在第一绝缘膜上的细线区域上沿着半导体器件的细线区域的纵向方向的部分区域。 半导体器件具有细线区域和微盒区域，以实现单电子电平的控制。 还公开了半导体器件的制造方法。