公开(公告)号：US20030219988A1

公开(公告)日：2003-11-27

申请号：US10154532

申请日：2002-05-22

Applicant: Applied Materials, Inc.

Inventor： Hongqing Shan ,  Kenny L. Doan ,  Jingbao Liu ,  Michael S. Barnes ,  Huong Thanh Nguyen ,  Christopher Dennis Bencher ,  Christopher S. Ngai ,  Wendy H. Yeh ,  Eda Tuncel ,  Claes H. Bjorkman

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/31144 ,  G03F7/40 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/0271 ,  H01L21/31116 ,  H01L21/312 ,  H01L21/3146

Abstract: A method is described for decreasing the critical dimensions of integrated circuit features in which a first masking layer (101) is deposited, patterned and opened in the manner of typical feature etching, and a second masking layer (201) is deposited thereon prior to etching the underlying insulator. The second masking layer is advantageously coated in a substantially conformal manner. Opening the second masking layer while leaving material of the second layer on the sidewalls of the first masking layer as spacers leads to reduction of the feature critical dimension in the underlying insulator. Ashable masking materials, including amorphous carbon and organic materials are removable without CMP, thereby reducing costs. Favorable results are also obtained utilizing more than one masking layer (101, 301) underlying the topmost masking layer (302) from which the spacers are formed. Embodiments are also described in which slope etching replaces the addition of a separate spacer layer. Substructures formed in the fabrication process are also described. Spacers are also shown to be favorably employed in making feature-in-feature structures.

Abstract translation: 描述了一种降低集成电路特征的关键尺寸的方法，其中以典型特征蚀刻的方式沉积，图案化和打开第一掩模层（101），并且在蚀刻之前沉积第二掩模层（201） 底层绝缘子。 有利地以基本上共形的方式涂覆第二掩模层。 打开第二掩蔽层，同时将第二层的材料留在第一掩模层的侧壁上作为间隔物导致下层绝缘体中的特征临界尺寸的减小。 包括无定形碳和有机材料在内的可湿性掩蔽材料可以不经CMP去除，从而降低成本。 利用形成间隔物的最上面的掩模层（302）下方的多于一个掩模层（101,301）也可获得有利的结果。 还描述了其中斜率蚀刻替代单独的间隔层的添加的实施例。 还描述了在制造过程中形成的子结构。 垫片也被用于制造特征特征结构。

公开(公告)号：US20040087139A1

公开(公告)日：2004-05-06

申请号：US10288123

申请日：2002-11-04

Applicant: Applied Materials, Inc.

Inventor： Wendy H. Yeh ,  Sang Ahn ,  Christopher Dennis Bencher ,  Hichem M'Saad ,  Sudha Rathi

IPC: H01L021/4763

CPC classification number: H01L21/76811 ,  C03C17/22 ,  C03C2217/213 ,  C03C2217/282 ,  C23C16/30 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76813

Abstract: A layer of antireflective coating (ARC) material for use in photolithographic processing. In one embodiment the ARC material has the formula SiwOxHy:Cz, where w, x, y and z represent the atomic percentage of silicon, oxygen, hydrogen and carbon, respectively, in the material and where w is between 35 and 55, x is between 35 and 55, y is between 4 and 15, z is between 0 and 3 and the atomic percentage of nitrogen in the material is less than or equal to 1 atomic percent.

Abstract translation: 用于光刻处理的一层抗反射涂层（ARC）材料。 在一个实施方案中，ARC材料具有式SiwO x H y：Cz，其中w，x，y和z分别表示材料中硅，氧，氢和碳的原子百分比，其中w在35和55之间，x是 在35和55之间，y在4和15之间，z在0和3之间，材料中氮的原子百分比小于或等于1原子％。

公开(公告)号：US20030091938A1

公开(公告)日：2003-05-15

申请号：US10322228

申请日：2002-12-17

Applicant: Applied Materials, Inc.

Inventor： Kevin Fairbairn ,  Michael Rice ,  Timothy Weidman ,  Christopher S. Ngai ,  Ian Scot Latchford ,  Christopher Dennis Bencher ,  Yuxiang May Wang

IPC: G03F007/30 ,  G03F007/11 ,  G03F007/16 ,  G03F007/40 ,  G03F007/42

CPC classification number: H01L21/76829 ,  C23C16/26 ,  H01L21/0276 ,  H01L21/28035 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/31612 ,  H01L21/32137 ,  H01L21/76802 ,  H01L21/76807

Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.

Abstract translation: 一种使用无定形碳膜形成集成电路的方法。 无定形碳膜通过热分解包含烃化合物和惰性气体的气体混合物而形成。 无定形碳膜与集成电路制造工艺兼容。 在一个集成电路制造工艺中，非晶碳膜用作硬掩模。 在另一个集成电路制造工艺中，无定形碳膜是用于深紫外（DUV）光刻的抗反射涂层（ARC）。 在又一集成电路制造工艺中，多层无定形碳抗反射涂层用于DUV光刻。

公开(公告)号：US20020086547A1

公开(公告)日：2002-07-04

申请号：US09905172

申请日：2001-07-13

Applicant: Applied Materials, Inc.

Inventor： David S. Mui ,  Wei Liu ,  Thorsten Lill ,  Christopher Dennis Bencher ,  Yuxiang May Wang

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/0276 ,  H01L21/28035 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31138 ,  H01L21/3146 ,  H01L21/32137 ,  H01L21/32139

Abstract: A multilayer antireflective hard mask structure is disclosed. The structure comprises: (a) a CVD organic layer, wherein the CVD organic layer comprises carbon and hydrogen; and (b) a dielectric layer over the CVD organic layer. The dielectric layer is preferably a silicon oxynitride layer, while the CVD organic layer preferably comprises 70-80% carbon, 10-20% hydrogen and 5-15% nitrogen. Also disclosed are methods of forming and trimming such a multilayer antireflective hard mask structure. Further disclosed are methods of etching a substrate structure using a mask structure that contains a CVD organic layer and optionally has a dielectric layer over the CVD organic layer.

Abstract translation: 公开了一种多层抗反射硬掩模结构。 该结构包括：（a）CVD有机层，其中CVD有机层包含碳和氢; 和（b）CVD有机层上的电介质层。 电介质层优选为氮氧化硅层，而CVD有机层优选包含70-80％的碳，10-20％的氢和5-15％的氮。 还公开了形成和修整这种多层抗反射硬掩模结构的方法。 还公开了使用包含CVD有机层并且可选地在CVD有机层上具有介电层的掩模结构来蚀刻衬底结构的方法。

公开(公告)号：US20040046260A1

公开(公告)日：2004-03-11

申请号：US10655438

申请日：2003-09-04

Applicant: Applied Materials, Inc.

Inventor： Judy H. Huang ,  Christopher Dennis Bencher ,  Sudha Rathi ,  Christopher S. Ngai ,  Bok Hoen Kim

IPC: H01L023/48 ,  H01L023/52 ,  H01L029/40

CPC classification number: H01L21/76834 ,  B08B7/0035 ,  C23C16/0245 ,  C23G5/00 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/31116 ,  H01L21/3148 ,  H01L21/3185 ,  H01L21/32136 ,  H01L21/76807 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.

Abstract translation: 本发明提供了一种原位等离子体还原方法以在沉积其后的层之前，在相对较低的温度下使用氮气和氢气（通常为氨）的化合物来还原氧化物或其它污染物。 与氧化物层的典型的物理溅射清洗工艺相比，这些层的粘合特性得到改善，氧的存在降低。 该方法对于双镶嵌结构的复杂要求尤其有用，特别是对于铜应用。

公开(公告)号：US20030186477A1

公开(公告)日：2003-10-02

申请号：US10383839

申请日：2003-03-07

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis Bencher

IPC: B23Q003/157

CPC classification number: H01L21/76826 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/31633 ,  H01L21/3212 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/7684

Abstract: A method is provided for processing a substrate including removing amorphous carbon material disposed on a low k dielectric material with minimal or reduced defect formation and minimal dielectric constant change of the low k dielectric material. In one aspect, the invention provides a method for processing a substrate including depositing at least one dielectric layer on a substrate surface, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less, forming amorphous carbon material on the at least one dielectric layer, and removing the one or more amorphous carbon layers by exposing the one or more amorphous carbon layers to a plasma of a hydrogen-containing gas.