公开(公告)号：US12024770B2

公开(公告)日：2024-07-02

申请号：US16535499

申请日：2019-08-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Chang Ke ,  Wenyu Zhang ,  Liqi Wu

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/08 ,  C23C16/18 ,  C23C16/455

CPC classification number: C23C16/18 ,  C23C16/0281 ,  C23C16/04 ,  C23C16/08 ,  C23C16/45525

Abstract: Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.

公开(公告)号：US10957590B2

公开(公告)日：2021-03-23

申请号：US16669082

申请日：2019-10-30

Applicant: Applied Materials, Inc.

Inventor： Wenhui Wang ,  Huixiong Dai ,  Christopher S. Ngai ,  Liqi Wu ,  Wenyu Zhang ,  Yongmei Chen ,  Hao Chen ,  Keith Tatseun Wong ,  Ke Chang

IPC: H01L21/768 ,  H01L23/535 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved.

公开(公告)号：US10014185B1

公开(公告)日：2018-07-03

申请号：US15446573

申请日：2017-03-01

Applicant: Applied Materials, Inc.

Inventor： Liqi Wu ,  Wenyu Zhang ,  Shih Chung Chen ,  Wei V. Tang ,  Leung Kway Lee ,  Xinming Zhang ,  Paul F. Ma

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/764

CPC classification number: H01L21/31122 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/32135 ,  H01L21/764

Abstract: Processing methods comprising oxidizing a metal nitride film to form a metal oxynitride layer and etching the metal oxynitride layer with a metal halide etchant. The metal halide etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of filling a trench with a seam-free gapfill are also described. A metal nitride film is deposited in the trench to form a seam and pinch-off an opening of the trench. The pinched-off opening is subjected to a directional oxidizing plasma and a metal halide etchant to open the pinched-off top and allow access to the seam.

公开(公告)号：US20190341268A1

公开(公告)日：2019-11-07

申请号：US16400248

申请日：2019-05-01

Applicant: Applied Materials, Inc.

Inventor： Wenyu Zhang ,  Yixiong Yang ,  Mario D. Sanchez ,  Guoqiang Jian ,  Wei Tang ,  Paul F. Ma

IPC: H01L21/3213 ,  H01L29/49

Abstract: Processing methods comprising etching a metal nitride layer with an etchant. The etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of improving the selectivity of etch processes are also disclosed.

公开(公告)号：US20180269065A1

公开(公告)日：2018-09-20

申请号：US15462214

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Wenyu Zhang ,  Wei V. Tang ,  Yixiong Yang ,  Chen-Han Lin ,  Yi Xu ,  Yu Lei ,  Naomi Yoshida ,  Lin Dong ,  Drew Phillips ,  Srividya Natarajan ,  Atashi Basu ,  Kaliappan Muthukumar ,  David Thompson ,  Paul F. Ma

IPC: H01L21/285 ,  C23C14/14 ,  C23C12/00 ,  H01L29/66 ,  H01L29/45 ,  H01L21/28 ,  H01L29/49

CPC classification number: H01L21/28556 ,  C23C12/00 ,  C23C14/14 ,  C23C16/34 ,  H01L21/28088 ,  H01L21/28568 ,  H01L29/456 ,  H01L29/4966 ,  H01L29/66795

Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

公开(公告)号：US10170321B2

公开(公告)日：2019-01-01

申请号：US15462214

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Wenyu Zhang ,  Wei V. Tang ,  Yixiong Yang ,  Chen-Han Lin ,  Yi Xu ,  Yu Lei ,  Naomi Yoshida ,  Lin Dong ,  Drew Phillips ,  Srividya Natarajan ,  Atashi Basu ,  Kaliappan Muthukumar ,  David Thompson ,  Paul F. Ma

IPC: H01L21/285 ,  C23C14/14 ,  C23C12/00 ,  H01L29/66 ,  H01L29/45 ,  H01L21/28 ,  H01L29/49

Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

公开(公告)号：US10755947B2

公开(公告)日：2020-08-25

申请号：US16400248

申请日：2019-05-01

Applicant: Applied Materials, Inc.

Inventor： Wenyu Zhang ,  Yixiong Yang ,  Mario D. Sanchez ,  Guoqiang Jian ,  Wei V. Tang ,  Paul F. Ma

IPC: H01L21/321 ,  H01L21/3213 ,  H01L29/49

Abstract: Processing methods comprising etching a metal nitride layer with an etchant. The etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of improving the selectivity of etch processes are also disclosed.

公开(公告)号：US10665450B2

公开(公告)日：2020-05-26

申请号：US16104352

申请日：2018-08-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Yixiong Yang ,  Paul F. Ma ,  Wei V. Tang ,  Wenyu Zhang ,  Shih Chung Chen ,  Chen Han Lin ,  Chi-Chou Lin ,  Yi Xu ,  Yu Lei ,  Naomi Yoshida ,  Lin Dong ,  Siddarth Krishnan

IPC: H01L21/02 ,  H01L29/40 ,  H01L21/28 ,  H01L29/51 ,  H01L29/49

Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

公开(公告)号：US09748354B2

公开(公告)日：2017-08-29

申请号：US15043883

申请日：2016-02-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Wei V. Tang ,  Paul F. Ma ,  Steven C. H. Hung ,  Michael Chudzik ,  Siddarth Krishnan ,  Wenyu Zhang ,  Seshadri Ganguli ,  Naomi Yoshida ,  Lin Dong ,  Yixiong Yang ,  Liqi Wu ,  Shih Chung Chen

IPC: H01L29/76 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L29/51 ,  H01L29/49

CPC classification number: H01L29/66446 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78603 ,  H01L29/78681

Abstract: Semiconductor devices incorporating multi-threshold voltage structures and methods of forming such semiconductor devices are provided herein. In some embodiments of the present disclosure, a semiconductor device having a multi-threshold voltage structure includes: a substrate; a gate dielectric layer atop the substrate, wherein the gate dielectric layer comprises an interface layer and a high-k dielectric layer atop the interface layer; a lanthanum nitride layer deposited atop the high-k dielectric layer; an interface of the interface layer and the high-k dielectric layer comprising lanthanum species from the lanthanum nitride layer; and a gate electrode layer atop the lanthanum nitride layer.