Dual robot processing system
    1.
    发明申请
    Dual robot processing system 失效
    双机器人处理系统

    公开(公告)号:US20030113187A1

    公开(公告)日:2003-06-19

    申请号:US10017039

    申请日:2001-12-14

    IPC分类号: B65G049/07

    摘要: A substrate processing system having a transfer chamber having two processing chambers and two load lock chambers coupled thereto is generally provided. The transfer chamber includes a body having a first transfer area and a second transfer area defined therein on either side of a center axis. A first passage couples one of the load locks with the first transfer area and a second passage couples the other one of the load locks with the second transfer area. The first passage and the second passage form an acute angle about the center axis. A transfer platform is disposed between the first transfer area and the second transfer area. A first transfer robot and a second transfer robot are disposed in the first and second transfer areas, respectively. Each robot is adapted to transfer substrates between the load locks, the transfer platform and a processing chamber.

    摘要翻译: 通常提供具有传送室的基板处理系统,该传送室具有两个处理室和与其连接的两个加载锁定室。 传送室包括在中心轴线的任一侧上具有限定在其中的第一传送区域和第二传送区域的主体。 第一通道将负载锁中的一个与第一传送区域耦合,并且第二通道将另一个负载锁与第二传送区域耦合。 第一通道和第二通道围绕中心轴线形成锐角。 传送平台设置在第一传送区域和第二传送区域之间。 第一传送机器人和第二传送机器人分别设置在第一传送区域和第二传送区域中。 每个机器人适于在负载锁,转移平台和处理室之间传送衬底。

    Method and apparatus for measuring object thickness
    2.
    发明申请
    Method and apparatus for measuring object thickness 有权
    测量物体厚度的方法和装置

    公开(公告)号:US20040140797A1

    公开(公告)日:2004-07-22

    申请号:US10685210

    申请日:2003-10-14

    IPC分类号: G01B007/06 G01N027/72

    CPC分类号: G01B7/105

    摘要: A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.

    摘要翻译: 提供了一种用于测量被测物体的厚度的方法和装置。 该装置包括具有第一和第二传感器头的涡流传感器。 传感器头被定位成在其间具有预定的间隙,以通过该测试对象的至少一部分通过间隙。 当测试对象移动穿过间隙时,传感器头在测试对象上的给定采样位置进行测量。 该装置还包括位置检测机构,用于确定测试对象上的采样位置的位置。 该装置还包括与涡流传感器和位置感测机构通信的评估电路,用于确定采样位置处的测试对象的厚度。

    Chemical vapor deposition chamber
    4.
    发明申请
    Chemical vapor deposition chamber 审中-公开
    化学气相沉积室

    公开(公告)号:US20030019428A1

    公开(公告)日:2003-01-30

    申请号:US10134206

    申请日:2002-04-26

    摘要: A processing chamber is adapted to perform a deposition process on a substrate. The chamber includes a pedestal adapted to hold a substrate during deposition and a gas mixing and distribution assembly mounted above the pedestal. The gas mixing and distribution assembly includes a face plate, a dispersion plate mounted above the face plate, and a mixing fixture mounted above the dispersion plate. The face plate is adapted to present an emissivity invariant configuration to the pedestal. The mixing fixture includes a mixing chamber to which a process gas is flowed and an outer chamber surrounding the mixing chamber. The processing chamber further includes an enclosure and a liner installed inside the enclosure and surrounding the pedestal. The liner defines a gap between the liner and the enclosure. The gap has a minimum width adjacent an exhaust port and a maximum width at a point that is diametrically opposite the exhaust port.

    摘要翻译: 处理室适于在基板上执行沉积处理。 腔室包括适于在沉积期间保持基底的基座和安装在基座上方的气体混合和分配组件。 气体混合分配组件包括面板,安装在面板上方的分散板和安装在分散板上方的混合夹具。 面板适于向基座呈现发射率不变构型。 混合夹具包括处理气体流过的混合室和围绕混合室的外室。 处理室还包括外壳和安装在外壳内并围绕基座的衬垫。 衬套限定了衬套和外壳之间的间隙。 该间隙具有邻近排气口的最小宽度和在与排气口径向相反的点处的最大宽度。

    Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition

    公开(公告)号:US20040170403A1

    公开(公告)日:2004-09-02

    申请号:US10792323

    申请日:2004-03-03

    发明人: Lawrence C. Lei

    IPC分类号: C23C014/26

    CPC分类号: C23C16/4481

    摘要: An apparatus and method for effectively and controllably vaporizing a solid precursor material is provided. In particular, the present invention provides an apparatus that includes a housing defining a sealed interior volume having an inlet for receiving a carrier gas, at least one surface within the housing for the application of a solid precursor, and a heating member for heating the solid precursor. The heating member can be located in the housing or in the surface within the housing. The surface can be a rod, baffle, mesh, or grating, and is preferably s-shaped or cone-shaped. Optionally, an outlet connects the housing to a reaction chamber. A method for vaporizing a solid precursor using the apparatus of the present invention is also provided.

    Self aligning non contact shadow ring process kit
    6.
    发明申请
    Self aligning non contact shadow ring process kit 审中-公开
    自对准非接触阴影环工艺套件

    公开(公告)号:US20040003780A1

    公开(公告)日:2004-01-08

    申请号:US10614992

    申请日:2003-07-07

    IPC分类号: C23C016/00

    摘要: The invention provides a removable first edge ring configured for pin and recess/slot coupling with a second edge ring disposed on the substrate support. In one embodiment, a first edge ring includes a plurality of pins, and a second edge ring includes one or more alignment recesses and one or more alignment slots for mating engagement with the pins. Each of the alignment recesses and alignment slots are at least as wide as the corresponding pins, and each of the alignment slots extends in the radial direction a length that is sufficient to compensate for the difference in thermal expansion between the first edge ring and the second edge ring.

    摘要翻译: 本发明提供了可拆卸的第一边缘环,其被配置用于与设置在基板支撑件上的第二边缘环的销和凹槽/狭槽联接。 在一个实施例中,第一边缘环包括多个销,并且第二边缘环包括一个或多个对准凹槽和用于与销配合接合的一个或多个对准槽。 每个对准凹槽和对准槽至少与相应的销一样宽,并且每个对准槽在径向方向上延伸的长度足以补偿第一边缘环和第二边缘之间的热膨胀差 边缘环。