公开(公告)号：US20170125220A1

公开(公告)日：2017-05-04

申请号：US15359186

申请日：2016-11-22

Applicant: Applied Materials, Inc.

Inventor： Xinglong CHEN ,  Saurabh GARG ,  Jang-Gyoo YANG

IPC: H01J37/32 ,  C23C16/455 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/02 ,  C23C16/452 ,  C23C16/505

CPC classification number: H01J37/32422 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/517 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32495 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/00 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31691 ,  H01L21/67017 ,  H01L21/67069 ,  H01L22/26 ,  H01L27/11502 ,  H01L28/55 ,  H01L43/12

Abstract: Embodiments of the disclosure generally relate to a hybrid plasma processing system incorporating a remote plasma source (RPS) unit with a capacitively coupled plasma (CCP) unit for substrate processing. In one embodiment, the hybrid plasma processing system includes a CCP unit, comprising a lid having one or more through holes, and an ion suppression element, wherein the lid and the ion suppression element define a plasma excitation region, a RPS unit coupled to the CCP unit, and a gas distribution plate disposed between the ion suppression element and a substrate support, wherein the gas distribution plate and the substrate support defines a substrate processing region. In cases where process requires higher power, both CCP and RPS units may be used to generate plasma excited species so that some power burden is shifted from the CCP unit to the RPS unit, which allows the CCP unit to operate at lower power.

公开(公告)号：US20150221479A1

公开(公告)日：2015-08-06

申请号：US14603638

申请日：2015-01-23

Applicant: Applied Materials, Inc.

Inventor： Xinglong CHEN ,  Saurabh GARG ,  Jang-Gyoo YANG

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/44 ,  C23C16/505

CPC classification number: H01J37/32422 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/517 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32495 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/00 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31691 ,  H01L21/67017 ,  H01L21/67069 ,  H01L22/26 ,  H01L27/11502 ,  H01L28/55 ,  H01L43/12

Abstract: Embodiments of the disclosure generally relate to a hybrid plasma processing system incorporating a remote plasma source (RPS) unit with a capacitively coupled plasma (CCP) unit for substrate processing. In one embodiment, the hybrid plasma processing system includes a CCP unit, comprising a lid having one or more through holes, and an ion suppression element, wherein the lid and the ion suppression element define a plasma excitation region, a RPS unit coupled to the CCP unit, and a gas distribution plate disposed between the ion suppression element and a substrate support, wherein the gas distribution plate and the substrate support defines a substrate processing region. In cases where process requires higher power, both CCP and RPS units may be used to generate plasma excited species so that some power burden is shifted from the CCP unit to the RPS unit, which allows the CCP unit to operate at lower power.

Abstract translation: 本公开的实施例一般涉及一种混合等离子体处理系统，其包括具有用于衬底处理的电容耦合等离子体（CCP）单元的远程等离子体源（RPS）单元。 在一个实施例中，混合等离子体处理系统包括CCP单元，其包括具有一个或多个通孔的盖子和离子抑制元件，其中盖子和离子抑制元件限定等离子体激发区域，RPS单元耦合到 CCP单元和设置在离子抑制元件和基板支撑件之间的气体分配板，其中气体分配板和基板支撑件限定基板处理区域。 在过程需要更高功率的情况下，CCP和RPS单元都可用于产生等离子体激发的物质，以使一些功率负载从CCP单元转移到RPS单元，这允许CCP单元以较低的功率工作。

公开(公告)号：US20170301517A1

公开(公告)日：2017-10-19

申请号：US15635410

申请日：2017-06-28

Applicant: Applied Materials, Inc.

Inventor： Xinglong CHEN ,  Saurabh GARG ,  Jang-Gyoo YANG

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/455 ,  C23C16/505 ,  H01L21/311

CPC classification number: H01J37/32422 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/517 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32495 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/00 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31691 ,  H01L21/67017 ,  H01L21/67069 ,  H01L22/26 ,  H01L27/11502 ,  H01L28/55 ,  H01L43/12

Abstract: Embodiments of the disclosure generally relate to a hybrid plasma processing system incorporating a remote plasma source (RPS) unit with a capacitively coupled plasma (CCP) unit for substrate processing. In one embodiment, the hybrid plasma processing system includes a CCP unit, comprising a lid having one or more through holes, and an ion suppression element, wherein the lid and the ion suppression element define a plasma excitation region, a RPS unit coupled to the CCP unit, and a gas distribution plate disposed between the ion suppression element and a substrate support, wherein the gas distribution plate and the substrate support defines a substrate processing region. In cases where process requires higher power, both CCP and RPS units may be used to generate plasma excited species so that some power burden is shifted from the CCP unit to the RPS unit, which allows the CCP unit to operate at lower power.