公开(公告)号：US20180171134A1

公开(公告)日：2018-06-21

申请号：US15579112

申请日：2016-05-26

申请人： ARKEMA FRANCE ,  INSTITUT POLYTECHNIQUE DE BORDEAUX ,  UNIVERSITE DE BORDEAUX ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)

发明人： Xavier Chevalier ,  Celia NICOLET ,  Christophe NAVARRO ,  Georges HADZIIOANNOU

IPC分类号： C08L53/00 ,  G03F7/00 ,  C08L27/12

CPC分类号： C08L53/005 ,  C08G2261/126 ,  C08G2261/136 ,  C08G2261/1426 ,  C08G2261/146 ,  C08L27/12 ,  C08L33/10 ,  C08L2203/16 ,  G01R33/46 ,  G03F7/0002

摘要： The invention relates to a process for reducing the defectivity of a block copolymer (BCP1) film, the lower surface of which is in contact with a preneutralized surface (N) of a substrate (S) and the upper surface of which is covered by an upper surface neutralization layer (TC) in order to make it possible to obtain an orientation of the nanodomains of the block copolymer (BCP1) perpendicularly to the two lower and upper interfaces, where the upper surface neutralization layer (TC) employed to cover the upper surface of the block copolymer (BCP1) film comprises a second block copolymer (BCP2).

公开(公告)号：US20240111217A1

公开(公告)日：2024-04-04

申请号：US17768522

申请日：2020-10-15

申请人： ARKEMA FRANCE ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  UNIVERSITE DE BORDEAUX ,  INSTITUT POLYTECHNIQUE DE BORDEAUX ,  UNIVERSITE GRENOBLE ALPES

发明人： Xavier Chevalier ,  Matthieu Sérégé ,  Cindy Gomes Correia ,  Marc Zelsmann ,  Guillaume Fleury

IPC分类号： G03F7/00

CPC分类号： G03F7/70383 ,  G03F7/0002 ,  H01L21/0271

摘要： The invention relates to a method of directional self-assembly lithography, said method comprising a step of depositing a block copolymer film on a layer (20) neutral with respect the block copolymer, said block copolymer film being for use as a lithography mask, said method being characterized in that it comprises the following steps of:



depositing said neutral layer (20) on a surface of a substrate (10), said neutral layer (20) being of the carbon or fluoro-carbon type deposited to a thickness greater than 1.5 times the thickness of the block copolymer film (40),
crosslinking said neutral layer,
depositing said block copolymer film, comprising at least one silylated block, on said crosslinked neutral layer (30),
subjecting the stack to an assembly temperature in order to nanostructure said block copolymer,
removing (G1) at least one of the nano-domains (41, 42) from the nanostructured block copolymer film (40), in order to create a pattern intended to be transferred by etching (G2, G3, G4) into the thickness of the substrate (10).

公开(公告)号：US20150073094A1

公开(公告)日：2015-03-12

申请号：US14481421

申请日：2014-09-09

申请人： ARKEMA FRANCE ,  CNRS ,  UNIVERSITÉ DE BORDEAUX ,  INSTITUT POLYTECHNIQUE DE BORDEAUX

发明人： Christophe Navarro ,  Xavier Chevalier ,  Celia Nicolet ,  Ilias Iliopoulos ,  Raluca Tiron ,  Guillaume Fleury ,  Georges Hadziioannou

IPC分类号： C08L53/00 ,  B05D3/02

CPC分类号： B05D3/046 ,  B05D1/005 ,  B05D3/0254 ,  C08F293/005 ,  C08F2438/02 ,  C08J5/18 ,  C08J2353/00 ,  C08L53/00 ,  C08L2205/025 ,  C08L2205/03 ,  C09D153/00 ,  G03F1/50 ,  G03F1/68 ,  G03F7/0002

摘要： The present invention relates to a process for producing nanostructured films obtained from block copolymers exhibiting a dispersity index of between 1.1 and 2, limits included, without nanostructuring defects, on a surface, in order for this treated surface to be able to be used as masks for applications in microelectronics.

摘要翻译： 本发明涉及从表面分散指数介于1.1和2之间的嵌段共聚物制备纳米结构膜的方法，所述分散指数在表面上包括没有纳米结构缺陷的限制，以使该处理过的表面能够用作掩模 适用于微电子学。

公开(公告)号：US20150073096A1

公开(公告)日：2015-03-12

申请号：US14481410

申请日：2014-09-09

申请人： ARKEMA FRANCE ,  CNRS ,  UNIVERSITÉ DE BORDEAUX ,  INSTITUT POLYTECHNIQUE DE BORDEAUX

发明人： Christophe Navarro ,  Xavier Chevalier ,  Celia Nicolet ,  IIias Iliopoulos ,  Raluca Tiron ,  Guillaume Fleury ,  Georges Hadziioannou

IPC分类号： B05D3/00 ,  B29C39/00 ,  C08L53/00

CPC分类号： B05D3/007 ,  B29C39/006 ,  B29K2025/08 ,  B29K2033/12 ,  B29K2096/04 ,  B29K2105/0085 ,  B29K2995/0088 ,  B29L2007/008 ,  C08L53/00 ,  C08L2205/025 ,  C08L2205/03 ,  C09D153/00 ,  G03F7/0002

摘要： The present invention relates to a process for controlling the period of a nanostructured assemblage comprising a blend of block copolymers which is deposited on a surface or in a mold. Block copolymers are characterized by the possession of at least one of the constituent monomers respectively of each of the blocks of the block copolymers identical but exhibit different molecular weights. The control process is targeted at obtaining thicknesses of films or objects, with few nanostructuring defects, which are sufficiently great for the treated surface to be able to be used as masks for applications in microelectronics or for the objects resulting therefrom to exhibit previously unpublished mechanical, acoustic or optical characteristics.

摘要翻译： 本发明涉及一种用于控制纳米结构组合的周期的方法，其包括沉积在表面或模具中的嵌段共聚物的共混物。 嵌段共聚物的特征在于分别具有相同但显示不同分子量的嵌段共聚物嵌段的至少一种构成单体。 控制过程的目的在于获得薄膜或物体的厚度，具有很少的纳米结构缺陷，其对于经处理的表面来说足够大以能够用作微电子学应用的掩模或由此产生的物体展示先前未发表的机械， 声学或光学特性。

公开(公告)号：US11880131B2

公开(公告)日：2024-01-23

申请号：US16955402

申请日：2018-12-19

申请人： Arkema France

发明人： Christophe Navarro ,  Celia Nicolet ,  Xavier Chevalier ,  Florian Delachat ,  Hubert Teyssedre

IPC分类号： G03F7/00 ,  B29C33/62 ,  B29C33/42 ,  C08F112/08 ,  C08F212/08 ,  C08F120/26 ,  C08F220/28 ,  C08F230/02 ,  C08F130/02

CPC分类号： G03F7/0002 ,  B29C33/424 ,  B29C33/62 ,  C08F112/08 ,  C08F120/26 ,  C08F130/02 ,  C08F212/08 ,  C08F220/281 ,  C08F230/02 ,  C08F2438/02

摘要： A process for transfer imprinting using a novel family of anti-sticking layers, such as for nanoimprint lithography processes, is described.

公开(公告)号：US20230063847A1

公开(公告)日：2023-03-02

申请号：US17785324

申请日：2020-12-29

申请人： ARKEMA FRANCE

发明人： Xavier Chevalier

IPC分类号： G03F7/00 ,  G03F7/038 ,  G03F7/095 ,  G03F7/09 ,  C08J3/24

摘要： The invention relates to a crosslinkable prepolymer composition for use as a contrast layer. It also relates to a method for structuring an interface material. This method is characterized in particular by the following steps:
depositing, on a block copolymer film, a prepolymer composition layer comprising a plurality of functional monomers and at least one crosslinkable functional group within its polymer chain and, on the other hand, two chemically different crosslinking agents, each agent being capable of initiating the crosslinking of said prepolymer in response to a stimulation specific thereto,
subjecting the stack to a first stimulation localized on first areas, so as to cause a crosslinking reaction of the molecular chains of said prepolymer, and subjecting the stack to a second stimulation, so as to cause crosslinking of the molecular chains of said prepolymer by the action of said second crosslinking agent in secondary areas.

公开(公告)号：US20230012890A1

公开(公告)日：2023-01-19

申请号：US17787406

申请日：2020-12-29

申请人： ARKEMA FRANCE ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  UNIVERSITE GRENOBLE ALPES

发明人： Xavier Chevalier ,  Marc Zelsmann ,  Christophe Navarro ,  Gwenaëlle Pound-Lana

IPC分类号： G03F7/00 ,  B82Y40/00

摘要： The invention relates to a method for nanostructuring a substrate (10) for the preparation of a nanostructured substrate having nanostructures of different dimensions, the method including removing the crosslinked polymer layer (TC) and one of the blocks of the nanostructured block copolymer so as to form patterns of a nanolithography mask; said method being characterized in that the removal of one of the blocks is a removal of only a portion of the nanodomains (21, 22) of one of the blocks of the nanostructured block copolymer, in particular of only the perpendicular nanodomains (Z1) of said block, such that the parallel nanodomains (21, 22) of at least two blocks of the nanostructured block copolymer form patterns of the nanolithography mask; and so as to generate in the nanolithography mask patterns (M1, M2, M3) of different dimensions and nanostructures in the nanostructured substrate of different dimensions after etching.

公开(公告)号：US20140370198A1

公开(公告)日：2014-12-18

申请号：US14363868

申请日：2012-12-05

申请人： ARKEMA FRANCE ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Christophe Navarro ,  Stéphanie Magnet ,  Xavier Chevalier ,  Raluca Tiron ,  Christophe Couderc

IPC分类号： B05D3/10 ,  C09D153/00 ,  B05D5/00 ,  B05D3/02 ,  B05D3/06

CPC分类号： B05D3/108 ,  B05D3/0254 ,  B05D3/06 ,  B05D5/00 ,  B05D7/52 ,  B05D7/56 ,  C08F293/005 ,  C08F2438/02 ,  C09D125/08 ,  C09D125/14 ,  C09D133/04 ,  C09D133/10 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/16 ,  C08F212/08 ,  C08F220/14

摘要： The invention relates to a surface preparation method using a combination of at least two polymers, which are the same or different, which are grafted hierarchically or multiply on a surface, and also to the use of this preparation method, more particularly in applications for controlling the surface energy of a substrate. The invention may allow a block polymer to be structured with a minimum of defects.

摘要翻译： 本发明涉及使用至少两种相同或不同的聚合物的组合的表面制备方法，所述聚合物在表面上分层或多次接枝，也涉及使用该制备方法，更具体地说，涉及用于控制 衬底的表面能。 本发明可以允许嵌段聚合物以最小的缺陷构造。

公开(公告)号：US10011675B2

公开(公告)日：2018-07-03

申请号：US15105245

申请日：2014-12-15

申请人： Arkema France

发明人： Christophe Navarro ,  Celia Nicolet ,  Xavier Chevalier

IPC分类号： C08F297/02 ,  B82Y30/00 ,  C09D153/00 ,  G03F7/00 ,  B82Y40/00 ,  C08J5/18

CPC分类号： C08F297/026 ,  B82Y30/00 ,  B82Y40/00 ,  C08J5/18 ,  C08J2353/00 ,  C09D153/00 ,  G03F7/0002 ,  Y10S438/945 ,  Y10S524/905 ,  Y10S525/915

摘要： The invention relates to a block copolymer film nanostructured in nanodomains at a predetermined temperature, obtained from a basic block copolymer which is nonstructured at said predetermined temperature, and at least one block of which comprises styrene and at least another block of which comprises methyl methacrylate. The block copolymer film is useful for forming nano-lithography masks.

公开(公告)号：US20180011399A1

公开(公告)日：2018-01-11

申请号：US15545113

申请日：2016-01-21

申请人： Arkema France

发明人： Xavier Chevalier ,  Raber Inoubli ,  Christophe Navarro ,  Celia Nicolet

IPC分类号： G03F1/72 ,  C08G81/02

CPC分类号： G03F1/72 ,  C08G81/021 ,  G03F7/0002

摘要： The present invention relates to a process for reducing the number of defects in an ordered film comprising a block copolymer (BCP). The invention also relates to the compositions used to obtain these ordered films and to the resulting ordered films that can be used in particular as masks in the lithography field.