公开(公告)号：US06774030B2

公开(公告)日：2004-08-10

申请号：US10304904

申请日：2002-11-26

Applicant: Gerd Marxsen ,  Axel Preusse

Inventor： Gerd Marxsen ,  Axel Preusse

IPC: H01L214763

CPC classification number: H01L22/26 ,  H01L21/3212

Abstract: In a method of in situ controlling the degree of fullness of wide lines in a damascene structure, an optical endpoint detection signal is analyzed so as to determine a time interval of substantially constant signal amplitude. The time interval is then used as a measure of the metal filled in a wide line in a damascene structure. By correlating the length of the time interval to at least one process parameter involved in the formation of the damascene structure, the degree of fullness of lines in the damascene structure may be controlled to maintain within a predefined allowable range.

Abstract translation: 在现场控制大马士革结构中宽线饱和度的方法中，分析光端点检测信号，以便确定基本恒定的信号幅度的时间间隔。 然后将时间间隔用作填充在镶嵌结构中的宽线中的金属的量度。 通过将时间间隔的长度与形成镶嵌结构中涉及的至少一个工艺参数相关联，可以控制镶嵌结构中的线的饱和度以保持在预定的允许范围内。

公开(公告)号：US06958247B2

公开(公告)日：2005-10-25

申请号：US10666195

申请日：2003-09-19

Applicant: Gerd Marxsen ,  Axel Preusse ,  Markus Nopper ,  Frank Mauersberger

Inventor： Gerd Marxsen ,  Axel Preusse ,  Markus Nopper ,  Frank Mauersberger

IPC: H01L21/288 ,  H01L21/768 ,  H01L21/461 ,  H01L21/4763

CPC classification number: H01L21/2885 ,  H01L21/7684 ,  H01L21/76877

Abstract: In a new method of plating metal onto dielectric layers including small diameter vias and large diameter trenches, a surface roughness is created at least on non-patterned regions of the dielectric layer to enhance the uniformity of material removal in a subsequent chemical mechanical polishing (CMP) process.

Abstract translation: 在将金属电镀到包括小直径通孔和大直径沟槽的电介质层上的新方法中，至少在电介质层的非图案化区域上产生表面粗糙度，以增强后续化学机械抛光（CMP）中材料去除的均匀性 ）过程。

公开(公告)号：US07985329B2

公开(公告)日：2011-07-26

申请号：US11257735

申请日：2005-10-25

Applicant: Axel Preusse ,  Gerd Marxsen

Inventor： Axel Preusse ,  Gerd Marxsen

IPC: C25D5/10

CPC classification number: H01L21/2885 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D17/10 ,  H01L21/76847 ,  H01L21/76877

Abstract: By providing two or more consumable electrodes within a single reactor vessel, an alloy having a high degree of chemical ordering may be deposited in situ in that the current flows of the individual consumable electrodes are controlled to obtain a substantially layered deposition of the two or more metals. Hence, especially in copper-based metallization layers, the advantage of enhanced resistance against electromigration offered by alloys may be achieved without unduly reducing the overall conductivity.

Abstract translation: 通过在单个反应器容器内提供两个或多个可消耗电极，可以原位沉积具有高度化学排序的合金，因为各个可消耗电极的电流流动被控制以获得两个或多个 金属。 因此，特别是在铜基金属化层中，可以在不过度降低总导电性的情况下实现增强由合金提供的电迁移性的优点。

公开(公告)号：US06761812B2

公开(公告)日：2004-07-13

申请号：US10303276

申请日：2002-11-25

Applicant: Axel Preusse ,  Gerd Marxsen

Inventor： Axel Preusse ,  Gerd Marxsen

IPC: C25D2112

CPC classification number: C25D7/123 ,  C25D17/001 ,  C25D21/12

Abstract: In an electroplating apparatus for semiconductor wafers, the currents to each of a plurality of contact portions contacting the wafer edge are individually adjustable and/or a parameter indicative of the current flow in each contact portion may be determined. Moreover, for precise control of the currents, means are provided for monitoring the currents.

公开(公告)号：US20060219565A1

公开(公告)日：2006-10-05

申请号：US11257735

申请日：2005-10-25

Applicant: Axel Preusse ,  Gerd Marxsen

Inventor： Axel Preusse ,  Gerd Marxsen

IPC: C25D5/18

CPC classification number: H01L21/2885 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D17/10 ,  H01L21/76847 ,  H01L21/76877

Abstract: By providing two or more consumable electrodes within a single reactor vessel, an alloy having a high degree of chemical ordering may be deposited in situ in that the current flows of the individual consumable electrodes are controlled to obtain a substantially layered deposition of the two or more metals. Hence, especially in copper-based metallization layers, the advantage of enhanced resistance against electromigration offered by alloys may be achieved without unduly reducing the overall conductivity.

Abstract translation: 通过在单个反应器容器内提供两个或多个可消耗电极，可以原位沉积具有高度化学排序的合金，因为各个可消耗电极的电流流动被控制以获得两个或多个 金属。 因此，特别是在铜基金属化层中，可以在不过度降低总导电性的情况下实现增强由合金提供的电迁移性的优点。

公开(公告)号：US06620726B1

公开(公告)日：2003-09-16

申请号：US10208764

申请日：2002-07-30

Applicant: Axel Preusse ,  Markus Nopper ,  Gerd Marxsen

Inventor： Axel Preusse ,  Markus Nopper ,  Gerd Marxsen

IPC: H01L214763

CPC classification number: B24B37/013 ,  B24B37/042 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877

Abstract: In a method of forming damascene metallization lines on a substrate by electroplating and chemical mechanical polishing, the metal layer thickness profile is shaped in correspondence to the removal rate during the chemical mechanical polishing. Thus, any non-uniformity of the chemical mechanical polishing process may be compensated for by appropriately depositing the metal layer so that erosion and dishing of the finally obtained metal lines are within tightly selected manufacturing tolerances.

Abstract translation: 在通过电镀和化学机械抛光在基底上形成镶嵌金属化线的方法中，金属层厚度分布根据化学机械抛光期间的去除速度成形。 因此，可以通过适当地沉积金属层来补偿化学机械抛光工艺的任何不均匀性，使得最终获得的金属线的侵蚀和凹陷在严格选择的制造公差内。

公开(公告)号：US08450197B2

公开(公告)日：2013-05-28

申请号：US12962968

申请日：2010-12-08

Applicant: Axel Preusse ,  Norbert Schroeder ,  Uwe Stoeckgen

Inventor： Axel Preusse ,  Norbert Schroeder ,  Uwe Stoeckgen

IPC: H01L21/20 ,  H01L21/4763 ,  H01L21/44

CPC classification number: H01L21/7684 ,  H01L21/76819 ,  H01L21/76879

Abstract: Contact elements in the contact level of a semiconductor device may be formed on the basis of a selective deposition technique, such as electroless plating, wherein an efficient planarization of the contact level is achieved without subjecting the contact elements to undue mechanical stress. In some illustrative embodiments, an overfilling of the contact openings may be reliably avoided and the planarization of the surface topography is accomplished on the basis of a non-critical polishing process. In other cases, electrochemical etch techniques are applied in combination with a conductive sacrificial current distribution layer in order to remove any excess material of the contact elements without inducing undue mechanical stress.

Abstract translation: 可以基于选择性沉积技术（例如化学镀）形成半导体器件的接触电平中的接触元件，其中在不使接触元件受到不适当的机械应力的情况下实现接触电平的有效平面化。 在一些示例性实施例中，可以可靠地避免接触开口的过度填充，并且基于非关键抛光工艺来实现表面形貌的平坦化。 在其他情况下，电化学蚀刻技术与导电牺牲电流分布层结合使用，以便去除接触元件的任何多余材料而不引起不适当的机械应力。

公开(公告)号：US07981793B2

公开(公告)日：2011-07-19

申请号：US12045907

申请日：2008-03-11

Applicant: Axel Preusse ,  Charlotte Emnet ,  Susanne Wehner

Inventor： Axel Preusse ,  Charlotte Emnet ,  Susanne Wehner

IPC: H01L21/44

CPC classification number: H01L21/76843 ,  H01L21/02068 ,  H01L21/288 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877

Abstract: By suppressing the presence of free oxygen during a cleaning process and a subsequent electrochemical deposition of a seed layer, the quality of a corresponding interface between the barrier material and the seed layer may be enhanced, thereby also improving performance and the characteristics of the finally obtained metal region. Thus, by identifying free oxygen as a main source for negatively affecting the characteristics of metals during a “direct on barrier” plating process, efficient strategies have been developed and are disclosed herein to provide a reliable technique for volume production of sophisticated semiconductor devices.

Abstract translation: 通过抑制清洁过程中的游离氧的存在和种子层的随后的电化学沉积，可以增强阻挡材料和种子层之间的对应界面的质量，从而也提高最终获得的性能和特性 金属区域。 因此，通过在“直接在屏障”电镀工艺中识别游离氧作为负面影响金属特性的主要来源，已经开发了有效的策略并在此公开了提供用于批量生产复杂半导体器件的可靠技术。

公开(公告)号：US07745327B2

公开(公告)日：2010-06-29

申请号：US11761444

申请日：2007-06-12

Applicant: Axel Preusse ,  Michael Friedemann ,  Robert Seidel ,  Berit Freudenberg

Inventor： Axel Preusse ,  Michael Friedemann ,  Robert Seidel ,  Berit Freudenberg

IPC: H01L21/4763

CPC classification number: H01L23/53238 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L2924/0002 ,  H01L2924/00

Abstract: By appropriately designing a plurality of deposition steps and intermediate sputter processes, the formation of a barrier material within a via opening may be accomplished on the basis of a highly efficient process strategy that readily integrates conductive cap layers formed above metal-containing regions into well-approved process sequences.

Abstract translation: 通过适当地设计多个沉积步骤和中间溅射工艺，通孔开口内的阻挡材料的形成可以基于高效的工艺策略来实现，该方法可以容易地将形成在含金属区域上方的导电盖层整合到井下， 批准的过程序列。

公开(公告)号：US20100133648A1

公开(公告)日：2010-06-03

申请号：US12604703

申请日：2009-10-23

Applicant: Robert Seidel ,  Markus Nopper ,  Axel Preusse

Inventor： Robert Seidel ,  Markus Nopper ,  Axel Preusse

IPC: H01L29/06 ,  H01L21/764

CPC classification number: H01L21/7682 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In sophisticated metallization systems, air gaps may be formed on the basis of a self-aligned patterning regime during which the conductive cap material of metal lines may be protected by providing one or more materials, which may subsequently be removed. Consequently, the etch behavior and the electrical characteristics of metal lines during the self-aligned patterning regime may be individually adjusted.

Abstract translation: 在复杂的金属化系统中，可以基于自对准图案化形态来形成气隙，在此期间金属线的导电盖材料可以通过提供一种或多种随后可以被去除的材料来保护。 因此，可以单独地调整在自对准图案化状态期间的金属线的蚀刻行为和电特性。