公开(公告)号：US3913212A

公开(公告)日：1975-10-21

申请号：US38202173

申请日：1973-07-23

Applicant: BELL TELEPHONE LABOR INC

Inventor： BACHMANN KLAUS JURGEN ,  BUEHLER ERNEST ,  SHAY JOSEPH LEO ,  WERNICK JACK HARRY

IPC: H01L31/10 ,  C30B19/04 ,  C30B19/06 ,  H01L21/00 ,  H01L21/368 ,  H01L29/861 ,  H01L31/032 ,  H01L31/109 ,  H01L33/00 ,  H01L33/30 ,  B01J17/00

CPC classification number: H01L33/30 ,  C30B19/04 ,  C30B19/061 ,  C30B29/10 ,  C30B29/44 ,  H01L21/00 ,  H01L31/032 ,  H01L31/109 ,  H01L33/005 ,  H01L33/305 ,  Y10S117/90 ,  Y10S438/93

Abstract: There are disclosed diodes for detection and diodes for emission of near-infrared radiation. Such a diode employs an epitaxial layer of n-type cadmium tin phosphide grown on a p-type InP substrate, which is the light-transmitting window of the device. Also diclosed is a tipping technique of epitaxial growth in which the conditions of the substrate crystal and the tin-rich melt are controlled to obtain high quality heterojunctions. A mixture of tin, phosphorus, and cadmium is prepared in a separate saturation procedure to minimize substrate degradation during epitaxial growth. The indium phosphide substrates are high quality and ptype with predominantly cadmium or zinc doping. In some diodes the CdSnP2 epitaxial layers contain some indium traceable to dissolution of the indium phosphide substrate by the tin solution prior to nucleation and growth of the epitaxial layer. Later diodes grown from solutions containing controlled amounts of indium intentionally added to the presaturated melt, efficiently emitted infrared light near 1.0 Mu .

Abstract translation: 公开了用于检测的二极管和用于发射近红外辐射的二极管。 这种二极管采用在作为器件的透光窗口的p型InP衬底上生长的n型镉锡磷化物的外延层。 另外还是外延生长的倾覆技术，其中基体晶体和富含锡的熔体的条件被控制以获得高质量的异质结。 在独立的饱和程序中制备锡，磷和镉的混合物，以使外延生长过程中的底物降解最小化。 磷化铟基底是高质量的，p型主要是镉或锌掺杂。

公开(公告)号：US3922553A

公开(公告)日：1975-11-25

申请号：US49917274

申请日：1974-08-21

Applicant: BELL TELEPHONE LABOR INC

Inventor： BACHMANN KLAUS JURGEN ,  BUEHLER ERNEST ,  SHAY JOSEPH LEO ,  WERNICK JACK HARRY

IPC: C30B19/04 ,  C30B19/06 ,  H01L31/032 ,  H01L31/109 ,  H01L33/00 ,  H01L29/161 ,  G01T1/22

CPC classification number: H01L33/005 ,  C30B19/04 ,  C30B19/061 ,  C30B29/10 ,  C30B29/44 ,  H01L31/032 ,  H01L31/109 ,  Y10S148/059 ,  Y10S148/072

Abstract: There are disclosed diodes for detection and diodes for emission of near-infrared radiation. Such a diode employs an epitaxial layer of n-type cadmium tin phosphide grown on a p-type InP substrate, which is the light-transmitting window of the device. Also disclosed is a tipping technique of epitaxial growth in which the conditions of the substrate crystal and the tin-rich melt are controlled to obtain high quality heterojunctions. A mixture of tin, phosphorus, and cadmium is prepared in a separate saturation procedure to minimize substrate degradation during epitaxial growth. The indium phosphide substrates are high quality and p-type with predominantly cadmium or zinc doping. In some diodes the CdSnP2 epitaxial layers contain some indium traceable to dissolution of the indium phosphide substrate by the tin solution prior to nucleation and growth of the epitaxial layer. Later diodes grown from solutions containing controlled amounts of indium intentionally added to the presaturated melt, efficiently emitted infrared light near 1.0 Mu .

Abstract translation: 公开了用于检测的二极管和用于发射近红外辐射的二极管。 这种二极管采用在作为器件的透光窗口的p型InP衬底上生长的n型镉锡磷化物的外延层。 还公开了外延生长的倾翻技术，其中基体晶体和富含锡的熔体的条件被控制以获得高质量的异质结。 在独立的饱和程序中制备锡，磷和镉的混合物，以使外延生长过程中的底物降解最小化。 磷化铟基底是高质量的，p型主要是镉或锌掺杂。

公开(公告)号：US3875451A

公开(公告)日：1975-04-01

申请号：US42345373

申请日：1973-12-10

Applicant: BELL TELEPHONE LABOR INC

Inventor： BACHMANN KLAUS JURGEN ,  BUEHLER ERNEST ,  SHAY JOSEPH LEO ,  WERNICK JACK HARRY

IPC: C30B19/04 ,  C30B19/06 ,  H01L21/208 ,  H01L31/103 ,  H01L33/00 ,  H01L33/30 ,  H04B10/43 ,  H01J1/62 ,  H01J63/04

CPC classification number: H01L33/30 ,  C30B19/04 ,  C30B19/061 ,  C30B29/10 ,  C30B29/44 ,  H01L21/02392 ,  H01L21/02543 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/02658 ,  H01L31/1035 ,  H01L33/0008 ,  H01L33/005 ,  H01L33/305 ,  H04B10/43

Abstract: There are disclosed indium phosphide p-n junction diodes providing efficient room temperature electroluminescence at wavelengths between 0.98 and 1.10 micrometers and comprising at least an n-type portion containing substantial quantities of cadmium and tin but forming a minor constituent in the n-type portion. The p-type portion is typically zinc or cadmium doped single crystal indium phosphide used as the substrate in the fabrication process. The n-type portion is epitaxially deposited by liquid phase epitaxial from tin solution. The resulting diode emits efficiently at the 1.05 micrometer wavelength of low loss glass fibers and also provides a better match to the absorption wavelength of infrared-to-visible frequency-converting phosphor than does a gallium arsenide laser or electroluminescence diode. External efficiencies exceeding 1 percent have been obtained.

Abstract translation: 公开了磷化铟p-n结二极管，其在0.98至1.10微米之间的波长范围内提供有效的室温电致发光，并且至少包含含有大量镉和锡的n型部分，但在n型部分中形成次要成分。 在制造过程中，p型部分通常是用作衬底的锌或镉掺杂的单晶磷化铟。 n型部分通过液相从锡溶液外延而外延沉积。 得到的二极管在低损耗玻璃纤维的1.05微米波长下有效发射，并且与砷化镓激光器或电致发光二极管相比，可以更好地匹配红外至可见频率转换荧光体的吸收波长。 已获得超过1％的外部效率。

公开(公告)号：US3636354A

公开(公告)日：1972-01-18

申请号：US3636354D

申请日：1970-03-23

Applicant: BELL TELEPHONE LABOR INC

Inventor： LEHENY ROBERT FRANCIS ,  SHAY JOSEPH LEO

IPC: G02F1/35 ,  H01L21/00 ,  H01L31/00 ,  H01S3/00 ,  G01J5/28 ,  G01J5/20

CPC classification number: H01S3/0014 ,  G02F1/3523 ,  H01L21/00 ,  H01L31/00

Abstract: There is disclosed a detector for near-infrared radiation employing a single crystal of cadmium tin phosphide, which is provided with electrodes and doped so that its effective bandgap at room temperature coincides in wavelength with the wavelength of the coherent light output of a neodymium ion solid-state laser. Photoconductive, PN junction-type, and barrier-layer-type detectors are disclosed. A modified device is useful as a saturable absorber for near-infrared light.