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公开(公告)号：US08647737B2
公开(公告)日：2014-02-11
申请号：US13250926
申请日：2011-09-30
CPC分类号： C23C18/1254 , C04B35/4682 , C04B35/493 , C04B35/624 , C04B35/634 , C04B2235/3213 , C04B2235/3227 , C04B2235/6562 , C23C18/1216 , C23C18/1225 , C23C18/1241 , C23C18/1283 , C23C18/1295 , C23C18/208 , H01B19/04 , H01L21/02118 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02197 , H01L21/02282 , H01L21/02356 , H01L21/3105 , H01L28/55 , Y10T428/24975
摘要： The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.
摘要翻译： 本发明提供了一种在基板上形成无裂纹电介质膜的方法。 该方法包括将厚度为约0.3μm至约1.0μm的电介质前体层施加到基底上。 沉积之后是每层的低温热预处理，预溶解，热解和结晶步骤。 重复沉积，热预处理，预溶解，热解和结晶，直到介电膜形成约1.5μm至约20.0μm的总厚度，并提供最终的结晶处理以形成厚的电介质膜。 还提供了在基板上的厚的无裂纹的电介质膜，电介质形成致密的无厚度的无裂纹的电介质，其整体电介质厚度为约1.5μm至约20.0μm。
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公开(公告)号：US09834843B2
公开(公告)日：2017-12-05
申请号：US15165427
申请日：2016-05-26
IPC分类号： C23C18/00 , C23C18/12 , H01B19/04 , H01L21/02 , C04B35/468 , C04B35/493 , C04B35/624 , C04B35/634 , C23C18/20 , H01L21/3105 , H01L49/02
CPC分类号： C23C18/1254 , C04B35/4682 , C04B35/493 , C04B35/624 , C04B35/634 , C04B2235/3213 , C04B2235/3227 , C04B2235/6562 , C23C18/1216 , C23C18/1225 , C23C18/1241 , C23C18/1283 , C23C18/1295 , C23C18/208 , H01B19/04 , H01L21/02118 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02197 , H01L21/02282 , H01L21/02356 , H01L21/3105 , H01L28/55 , Y10T428/24975
摘要： The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.
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公开(公告)号：US20160376708A1
公开(公告)日：2016-12-29
申请号：US15165427
申请日：2016-05-26
IPC分类号： C23C18/12 , H01L21/3105 , H01L49/02 , H01L21/02
CPC分类号： C23C18/1254 , C04B35/4682 , C04B35/493 , C04B35/624 , C04B35/634 , C04B2235/3213 , C04B2235/3227 , C04B2235/6562 , C23C18/1216 , C23C18/1225 , C23C18/1241 , C23C18/1283 , C23C18/1295 , C23C18/208 , H01B19/04 , H01L21/02118 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02197 , H01L21/02282 , H01L21/02356 , H01L21/3105 , H01L28/55 , Y10T428/24975
摘要： The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.
摘要翻译： 本发明提供了一种在基板上形成无裂纹电介质膜的方法。 该方法包括将厚度为约0.3μm至约1.0μm的电介质前体层施加于基底。 沉积之后是每层的低温热预处理，预溶解，热解和结晶步骤。 重复沉积，热预处理，预溶解，热解和结晶，直到电介质膜形成约1.5μm至约20.0μm的总厚度，并提供最终的结晶处理以形成厚的电介质膜。 该方法在基底上提供厚的无裂纹的电介质膜，电介质形成致密的无厚度的无裂纹电介质，其整个电介质厚度为约1.5μm至约20.0μm。
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公开(公告)号：US20130084444A1
公开(公告)日：2013-04-04
申请号：US13250926
申请日：2011-09-30
CPC分类号： C23C18/1254 , C04B35/4682 , C04B35/493 , C04B35/624 , C04B35/634 , C04B2235/3213 , C04B2235/3227 , C04B2235/6562 , C23C18/1216 , C23C18/1225 , C23C18/1241 , C23C18/1283 , C23C18/1295 , C23C18/208 , H01B19/04 , H01L21/02118 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02197 , H01L21/02282 , H01L21/02356 , H01L21/3105 , H01L28/55 , Y10T428/24975
摘要： The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.
摘要翻译： 本发明提供了一种在基板上形成无裂纹电介质膜的方法。 该方法包括将厚度为约0.3μm至约1.0μm的电介质前体层施加到基底。 沉积之后是每层的低温热预处理，预溶解，热解和结晶步骤。 重复沉积，热预处理，预溶解，热解和结晶，直到电介质膜形成约1.5μm至约20.0μm的总厚度，并提供最终的结晶处理以形成厚的电介质膜。 还提供了在基板上的厚的无裂纹的电介质膜，该电介质形成了具有约1.5μm至约20.0μm的总电介质厚度的致密厚的无裂纹电介质。
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公开(公告)号：US20160278215A1
公开(公告)日：2016-09-22
申请号：US15164169
申请日：2016-05-25
CPC分类号： H05K3/068 , C01G55/00 , C01G55/002 , C01P2004/03 , C01P2006/32 , C01P2006/40 , H01B1/08 , H01L28/65 , H05K1/092 , Y10T428/31678
摘要： The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.
摘要翻译： 本发明提供了一种生产纯相锶氧化钌薄膜的方法，该方法包括使含钌和含锶化合物溶解以产生混合物; 使混合物经受高于形成RuO 2所必需的第一温度，同时防止形成RuO 2; 保持第一温度一段时间以从混合物中除去有机化合物，从而形成基本干燥的膜; 并将膜处于第二温度足以使膜结晶的时间。 还提供了包含氧化钌的纯相材料，其中该材料不含RuO 2。
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公开(公告)号：US08974856B2
公开(公告)日：2015-03-10
申请号：US12786940
申请日：2010-05-25
IPC分类号： B05D7/00 , C23C26/00 , C04B35/491 , C04B35/624 , C23C18/12 , H01G4/12
CPC分类号： H01G13/04 , C04B35/491 , C04B35/624 , C04B2235/3227 , C04B2235/3232 , C04B2235/3244 , C04B2235/3296 , C04B2235/441 , C04B2235/443 , C04B2235/449 , C04B2235/6562 , C04B2235/6565 , C04B2235/6584 , C04B2235/768 , C23C18/1204 , C23C18/1208 , C23C18/1225 , C23C18/1241 , C23C18/1254 , C23C18/1283 , C23C18/1295 , C23C26/00 , H01G4/1218 , H01G4/1245 , Y10T428/24355 , Y10T428/266
摘要： The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.
摘要翻译： 本发明提供一种在铜箔上制造陶瓷膜的方法。 该方法包括将一层溶胶 - 凝胶组合物涂覆在铜箔上。 溶胶 - 凝胶组合物包含悬浮在2-甲氧基乙醇中的陶瓷材料的前体。 然后将溶胶 - 凝胶层在高达约250℃的温度下干燥。然后将干燥的层在约300至约450℃的温度下热解，以从陶瓷前体形成陶瓷膜。 陶瓷膜然后在约600至约750℃的温度下结晶。干燥，热解和结晶在惰性气体流下进行。 在一些实施方案中，将另外的溶胶 - 凝胶组合物层施加到陶瓷膜上，并重复干燥，热解和结晶步骤以使附加层在铜箔上形成较厚的陶瓷层。 如果需要，该过程可重复一次或多次。
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公开(公告)号：US20130071670A1
公开(公告)日：2013-03-21
申请号：US13237487
申请日：2011-09-20
CPC分类号： H05K3/068 , C01G55/00 , C01G55/002 , C01P2004/03 , C01P2006/32 , C01P2006/40 , H01B1/08 , H01L28/65 , H05K1/092 , Y10T428/31678
摘要： The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.
摘要翻译： 本发明提供了一种生产纯相锶氧化钌薄膜的方法，该方法包括使含钌和含锶化合物溶解以产生混合物; 使混合物经受高于形成RuO 2所必需的第一温度，同时防止形成RuO 2; 保持第一温度一段时间以从混合物中除去有机化合物，从而形成基本干燥的膜; 并将膜处于第二温度足以使膜结晶的时间。 还提供了包含氧化钌的纯相材料，其中该材料不含RuO 2。
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公开(公告)号：US09359223B2
公开(公告)日：2016-06-07
申请号：US13237487
申请日：2011-09-20
CPC分类号： H05K3/068 , C01G55/00 , C01G55/002 , C01P2004/03 , C01P2006/32 , C01P2006/40 , H01B1/08 , H01L28/65 , H05K1/092 , Y10T428/31678
摘要： The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.
摘要翻译： 本发明提供了一种生产纯相锶氧化钌薄膜的方法，该方法包括使含钌和含锶化合物溶解以产生混合物; 使混合物经受高于形成RuO 2所必需的第一温度，同时防止形成RuO 2; 保持第一温度一段时间以从混合物中除去有机化合物，从而形成基本干燥的膜; 并将膜处于第二温度足以使膜结晶的时间。 还提供了包含氧化钌的纯相材料，其中该材料不含RuO 2。
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公开(公告)号：US09646766B2
公开(公告)日：2017-05-09
申请号：US13523335
申请日：2012-06-14
CPC分类号： H01G4/008 , H01G4/10 , H01G4/12 , H01G4/1209 , H01G4/30 , Y10T29/435
摘要： The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.
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10.发明申请METHOD OF MAKING DIELECTRIC CAPACITORS WITH INCREASED DIELECTRIC BREAKDOWN STRENGTH 有权制造具有增强的介电断裂强度的电介质电容器的方法公开(公告)号：US20130335882A1
公开(公告)日：2013-12-19
申请号：US13523335
申请日：2012-06-14
CPC分类号： H01G4/008 , H01G4/10 , H01G4/12 , H01G4/1209 , H01G4/30 , Y10T29/435
摘要： The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.
摘要翻译： 本发明涉及一种用于制造介电陶瓷膜电容器和由其形成的陶瓷介电层压电容器的方法，所述介电陶瓷膜电容器具有增加的介电击穿强度。 本发明通过在电容器的电介质层内的电极层之间嵌入导电氧化物层来增加击穿强度。 导电氧化物层重新分布和耗散电荷，从而通过电场减轻电介质中形成的电荷浓度和微裂纹。
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