公开(公告)号：US20070081880A1

公开(公告)日：2007-04-12

申请号：US11238777

申请日：2005-09-29

申请人： Benjamin Riordon ,  Lawrence Ficarra ,  James Buonodono

发明人： Benjamin Riordon ,  Lawrence Ficarra ,  James Buonodono

IPC分类号： H01L21/677

CPC分类号： H01L21/67766 ,  H01L21/67126 ,  H01L21/67201

摘要： The invention provides a wafer-handling method, system, and apparatus. In one embodiment, the invention provides a wafer-handling apparatus comprising: a clamping surface for securing a wafer; and a load lock sealing surface for forming an airtight seal with a load lock wall.

摘要翻译： 本发明提供一种晶片处理方法，系统和装置。 在一个实施例中，本发明提供了一种晶片处理设备，包括：用于固定晶片的夹持表面; 以及用于与负载锁定壁形成气密密封的负载锁定密封表面。

公开(公告)号：US20080078950A1

公开(公告)日：2008-04-03

申请号：US11536046

申请日：2006-09-28

申请人： James Buonodono ,  Paul Murphy ,  Joseph C. Olson ,  Anthony Renau

发明人： James Buonodono ,  Paul Murphy ,  Joseph C. Olson ,  Anthony Renau

IPC分类号： H01J37/317

CPC分类号： H01J37/20 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/20207 ,  H01J2237/20292 ,  H01J2237/24528 ,  H01L21/265 ,  H01L21/67213 ,  H01L21/68764

摘要： A system, method and program product for improving uniformity and angle control wafers being implanted. A system is provided that includes an end station for positioning a wafer being implanted, comprising: a platen for holding the wafer, wherein the platen is rotatable to provide wafer rotation; a housing for holding the platen, wherein the housing is rotatable about a first orthogonal axis to provide a first type of wafer tilt; a structure for supporting the housing, wherein the structure is rotatable about a second orthogonal axis to provide a second type of wafer tilt; and a control system which, during an implant process of the wafer, causes wafer rotation, the first type of wafer tilt, and the second type of wafer tilt.

摘要翻译： 一种用于改善植入的均匀性和角度控制晶片的系统，方法和程序产品。 提供了一种系统，其包括用于定位被植入的晶片的端站，包括：用于保持晶片的压板，其中所述压板可旋转以提供晶片旋转; 用于保持所述压板的壳体，其中所述壳体可围绕第一正交轴线旋转以提供第一类型的晶片倾斜; 用于支撑壳体的结构，其中所述结构可围绕第二正交轴线旋转以提供第二类型的晶片倾斜; 以及控制系统，其在晶片的植入过程期间引起晶片旋转，第一类型的晶片倾斜和第二类型的晶片倾斜。

公开(公告)号：US08461030B2

公开(公告)日：2013-06-11

申请号：US12947078

申请日：2010-11-16

申请人： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Deepak A. Ramappa ,  Russell J. Low ,  Atul Gupta ,  Kevin M. Daniels

发明人： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Deepak A. Ramappa ,  Russell J. Low ,  Atul Gupta ,  Kevin M. Daniels

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： B01J19/081 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J2237/0453 ,  H01J2237/1205 ,  H01L21/2236 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/08 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.

公开(公告)号：US07812325B2

公开(公告)日：2010-10-12

申请号：US11536046

申请日：2006-09-28

申请人： James Buonodono ,  Paul Murphy ,  Joseph C. Olson ,  Anthony Renau

发明人： James Buonodono ,  Paul Murphy ,  Joseph C. Olson ,  Anthony Renau

IPC分类号： H01J37/08 ,  A61N5/00

CPC分类号： H01J37/20 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/20207 ,  H01J2237/20292 ,  H01J2237/24528 ,  H01L21/265 ,  H01L21/67213 ,  H01L21/68764

摘要： A system, method and program product for improving uniformity and angle control wafers being implanted. A system is provided that includes an end station for positioning a wafer being implanted, comprising: a platen for holding the wafer, wherein the platen is rotatable to provide wafer rotation; a housing for holding the platen, wherein the housing is rotatable about a first orthogonal axis to provide a first type of wafer tilt; a structure for supporting the housing, wherein the structure is rotatable about a second orthogonal axis to provide a second type of wafer tilt; and a control system which, during an implant process of the wafer, causes wafer rotation, the first type of wafer tilt, and the second type of wafer tilt.

摘要翻译： 一种用于改善植入的均匀性和角度控制晶片的系统，方法和程序产品。 提供了一种系统，其包括用于定位被植入的晶片的端站，包括：用于保持晶片的压板，其中所述压板可旋转以提供晶片旋转; 用于保持所述压板的壳体，其中所述壳体可围绕第一正交轴线旋转以提供第一类型的晶片倾斜; 用于支撑壳体的结构，其中所述结构可围绕第二正交轴线旋转以提供第二类型的晶片倾斜; 以及控制系统，其在晶片的植入过程期间引起晶片旋转，第一类型的晶片倾斜和第二类型的晶片倾斜。

公开(公告)号：US20110124186A1

公开(公告)日：2011-05-26

申请号：US12947078

申请日：2010-11-16

申请人： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Frank Sinclair ,  Deepak A. Ramappa ,  Russell Low ,  Atul Gupta ,  Kevin M. Daniels

发明人： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Frank Sinclair ,  Deepak A. Ramappa ,  Russell Low ,  Atul Gupta ,  Kevin M. Daniels

IPC分类号： H01L21/265 ,  G21K5/10

CPC分类号： B01J19/081 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J2237/0453 ,  H01J2237/1205 ,  H01L21/2236 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/08 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.

摘要翻译： 等离子体处理装置包括等离子体源，其被配置为在等离子体室中产生等离子体，使得等离子体包含用于注入工件的离子。 该装置还包括聚焦板装置，该聚焦板装置具有孔结构，其被配置为修改离开聚焦板附近的等离子体鞘的等离子体鞘的形状，使得离开孔结构的孔的离子限定聚焦离子。 该设备还包括处理室，其包含与聚焦板间隔开的工件，使得在工件处的聚焦离子的固定注入区域基本上比孔更窄。 该装置被配置为通过在离子注入期间扫描工件来在工件中产生多个图案化区域。