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    Method and system for ion-assisted processing
    3.
    发明授权
    Method and system for ion-assisted processing 有权
    离子辅助加工的方法和系统

    公开(公告)号：US08728951B2

    公开(公告)日：2014-05-20

    申请号：US13563056

    申请日：2012-07-31

    申请人： Ludovic Godet ,  Xianfeng Lu ,  Deepak A. Ramappa

    发明人： Ludovic Godet ,  Xianfeng Lu ,  Deepak A. Ramappa

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01J37/32366 ,  C23C16/04 ,  C23C16/50 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/08 ,  H01J2237/31732

    摘要： A method of processing a substrate includes performing a first exposure that comprises generating a plasma containing reactive gas ions in a plasma chamber and generating a bias voltage between the substrate and the plasma chamber. The method also includes providing a plasma sheath modifier having an aperture disposed between the plasma and substrate and operable to direct the reactive gas ions toward the substrate, and establishing a pressure differential between the plasma chamber and substrate region while the reactive gas ions are directed onto the substrate.

    摘要翻译： 一种处理衬底的方法包括执行第一曝光，其包括在等离子体室中产生含有反应气体离子的等离子体，并在衬底和等离子体室之间产生偏置电压。 该方法还包括提供等离子体护套改性剂，其具有设置在等离子体和衬底之间的孔，并可操作以将反应性气体离子引向衬底，并且在反应性气体离子被引导到等离子体室和衬底区域之间建立压力差 底物。

    METHOD AND SYSTEM FOR ION-ASSISTED PROCESSING
    4.
    发明申请
    METHOD AND SYSTEM FOR ION-ASSISTED PROCESSING 有权
    离子辅助加工方法与系统

    公开(公告)号：US20140038393A1

    公开(公告)日：2014-02-06

    申请号：US13563056

    申请日：2012-07-31

    申请人： Ludovic Godet ,  Xianfeng Lu ,  Deepak A. Ramappa

    发明人： Ludovic Godet ,  Xianfeng Lu ,  Deepak A. Ramappa

    IPC分类号： C23C16/50 ,  B05C9/00 ,  H01L21/203 ,  B44C1/22

    CPC分类号： H01J37/32366 ,  C23C16/04 ,  C23C16/50 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/08 ,  H01J2237/31732

    摘要： A method of processing a substrate includes performing a first exposure that comprises generating a plasma containing reactive gas ions in a plasma chamber and generating a bias voltage between the substrate and the plasma chamber. The method also includes providing a plasma sheath modifier having an aperture disposed between the plasma and substrate and operable to direct the reactive gas ions toward the substrate, and establishing a pressure differential between the plasma chamber and substrate region while the reactive gas ions are directed onto the substrate.

    摘要翻译： 一种处理衬底的方法包括执行第一曝光，其包括在等离子体室中产生含有反应气体离子的等离子体，并在衬底和等离子体室之间产生偏置电压。 该方法还包括提供等离子体护套改性剂，其具有设置在等离子体和衬底之间的孔，并可操作以将反应性气体离子引向衬底，并且在反应性气体离子被引导到等离子体室和衬底区域之间建立压力差 底物。

    Workpiece patterning with plasma sheath modulation
    5.
    发明授权
    Workpiece patterning with plasma sheath modulation 有权
    工件图案化等离子体鞘调制

    公开(公告)号：US08187979B2

    公开(公告)日：2012-05-29

    申请号：US12646407

    申请日：2009-12-23

    申请人： Deepak A. Ramappa ,  Ludovic Godet

    发明人： Deepak A. Ramappa ,  Ludovic Godet

    IPC分类号： H01L31/18

    CPC分类号： H01L31/068 ,  H01J37/32366 ,  H01J37/32422 ,  H01J37/32623 ,  H01L21/3065 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Methods to texture or fabricate workpieces are disclosed. The workpiece may be, for example, a solar cell. This texturing may involve etching or localized sputtering using a plasma where a shape of a boundary between the plasma and the plasma sheath is modified with an insulating modifier. The workpiece may be rotated in between etching or sputtering steps to form pyramids. Regions of the workpiece also may be etched or sputtered with ions formed from a plasma adjusted by an insulating modifier and doped. A metal layer may be formed on these doped regions.

    摘要翻译： 公开了纹理或制造工件的方法。 工件可以是例如太阳能电池。 这种纹理化可能包括使用等离子体进行蚀刻或局部溅射，其中等离子体和等离子体护套之间的边界的形状用绝缘改性剂改性。 可以在蚀刻或溅射步骤之间旋转工件以形成金字塔。 工件的区域也可以用由通过绝缘改性剂调节的等离子体形成的离子进行蚀刻或溅射并掺杂。 可以在这些掺杂区域上形成金属层。

    METHOD FOR PATTERNING A SUBSTRATE USING ION ASSISTED SELECTIVE DEPOSITION
    6.
    发明申请
    METHOD FOR PATTERNING A SUBSTRATE USING ION ASSISTED SELECTIVE DEPOSITION 有权
    使用离子辅助选择性沉积方式绘制基板的方法

    公开(公告)号：US20110259408A1

    公开(公告)日：2011-10-27

    申请号：US13091289

    申请日：2011-04-21

    申请人： Deepak A. Ramappa ,  Ludovic Godet

    发明人： Deepak A. Ramappa ,  Ludovic Godet

    IPC分类号： H01L31/06 ,  H01L31/0224 ,  H01L31/0376

    CPC分类号： H01L21/00 ,  C23C14/042 ,  C23C14/48 ,  C23C16/02 ,  C23C16/04 ,  C23C16/50 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of patterning a substrate includes providing a focusing plate adjacent to a plasma chamber containing a plasma, the focusing plate configured to extract ions from the plasma through at least one aperture that provides focused ions towards the substrate. The method further includes directing first ions through the at least one aperture to one or more first regions of the substrate so as to condense first gaseous species provided in ambient of the substrate on the one or more first regions of the substrate.

    摘要翻译： 图案化衬底的方法包括提供邻近包含等离子体的等离子体室的聚焦板，该聚焦板被配置为通过至少一个孔向等离子体提取离子，所述孔向衬底提供聚焦离子。 该方法还包括将第一离子引导通过至少一个孔到基底的一个或多个第一区域，以便在衬底的一个或多个第一区域上冷凝在衬底环境中提供的第一气态物质。

    Method for patterning a substrate using ion assisted selective depostion
    8.
    发明授权
    Method for patterning a substrate using ion assisted selective depostion 有权
    使用离子辅助选择性沉积法构图衬底的方法

    公开(公告)号：US08592230B2

    公开(公告)日：2013-11-26

    申请号：US13091289

    申请日：2011-04-21

    申请人： Deepak A. Ramappa ,  Ludovic Godet

    发明人： Deepak A. Ramappa ,  Ludovic Godet

    IPC分类号： H01L21/00

    CPC分类号： H01L21/00 ,  C23C14/042 ,  C23C14/48 ,  C23C16/02 ,  C23C16/04 ,  C23C16/50 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of patterning a substrate includes providing a focusing plate adjacent to a plasma chamber containing a plasma, the focusing plate configured to extract ions from the plasma through at least one aperture that provides focused ions towards the substrate. The method further includes directing first ions through the at least one aperture to one or more first regions of the substrate so as to condense first gaseous species provided in ambient of the substrate on the one or more first regions of the substrate.

    摘要翻译： 图案化衬底的方法包括提供邻近包含等离子体的等离子体室的聚焦板，该聚焦板被配置为通过至少一个孔向等离子体提取离子，所述孔向衬底提供聚焦离子。 该方法还包括将第一离子引导通过至少一个孔到基底的一个或多个第一区域，以便在衬底的一个或多个第一区域上冷凝在衬底环境中提供的第一气态物质。

    PLASMA PROCESSING OF WORKPIECES TO FORM A COATING
    9.
    发明申请
    PLASMA PROCESSING OF WORKPIECES TO FORM A COATING 有权
    工件的等离子体处理形成涂层

    公开(公告)号：US20130064989A1

    公开(公告)日：2013-03-14

    申请号：US13608709

    申请日：2012-09-10

    申请人： Christopher R. Hatem ,  Ludovic Godet ,  Louis Steen ,  Deepak A. Ramappa

    发明人： Christopher R. Hatem ,  Ludovic Godet ,  Louis Steen ,  Deepak A. Ramappa

    IPC分类号： C23C14/48

    CPC分类号： C23C14/048 ,  H01J37/32412

    摘要： A surface of an insulating workpiece is implanted to form either hydrophobic or hydrophilic implanted regions. A conductive coating is deposited on the workpiece. The coating may be a polymer in one instance. This coating preferentially forms either on the implanted regions if these implanted regions are hydrophilic or on the non-implanted regions if the implanted regions are hydrophobic.

    摘要翻译： 植入绝缘工件的表面以形成疏水或亲水注入区域。 导电涂层沉积在工件上。 在一种情况下，涂层可以是聚合物。 如果这些注入区域是亲水的，则该涂层优选地形成在注入区域上，或者如果注入的区域是疏水的，则优选地形成在非注入区域上。

    System for ultraviolet atmospheric seed layer remediation
    10.
    发明授权
    System for ultraviolet atmospheric seed layer remediation 有权
    紫外线大气种子层修复系统

    公开(公告)号：US07015568B2

    公开(公告)日：2006-03-21

    申请号：US10645679

    申请日：2003-08-21

    申请人： Aaron Frank ,  David Gonzalez ,  John DeGenova ,  Srinavas Raghavan ,  Deepak A. Ramappa

    发明人： Aaron Frank ,  David Gonzalez ,  John DeGenova ,  Srinavas Raghavan ,  Deepak A. Ramappa

    IPC分类号： H01L23/552

    CPC分类号： H01L21/76856 ,  B08B7/0057 ,  C25D5/34 ,  H01L21/321 ,  H01L21/67028 ,  H01L21/67115 ,  H01L21/76862 ,  H01L21/76873

    摘要： The present invention provides a system for removing organic contaminants (216) from a copper seed layer that has been deposited on a semiconductor substrate (206). The present invention provides a housing (204) to enclose the semiconductor substrate within. An ultraviolet radiation source (210) is disposed within the housing. A treatment medium (208) is also provided within the housing. The semiconductor substrate is enclosed within the housing and exposed to the treatment medium. The ultraviolet radiation source exposes the semiconductor substrate to ultraviolet radiation, desorbing the contaminants from the seed layer.

    摘要翻译： 本发明提供了一种从已沉积在半导体衬底（206）上的铜籽晶层去除有机污染物（216）的系统。 本发明提供一种将半导体衬底包围的壳体（204）。 紫外线辐射源（210）设置在壳体内。 处理介质（208）也设置在壳体内。 将半导体衬底封装在壳体内并暴露于处理介质。 紫外线辐射源将半​​导体衬底暴露于紫外线辐射，从种子层解吸污染物。