公开(公告)号：US20110124186A1

公开(公告)日：2011-05-26

申请号：US12947078

申请日：2010-11-16

申请人： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Frank Sinclair ,  Deepak A. Ramappa ,  Russell Low ,  Atul Gupta ,  Kevin M. Daniels

发明人： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Frank Sinclair ,  Deepak A. Ramappa ,  Russell Low ,  Atul Gupta ,  Kevin M. Daniels

IPC分类号： H01L21/265 ,  G21K5/10

CPC分类号： B01J19/081 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J2237/0453 ,  H01J2237/1205 ,  H01L21/2236 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/08 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.

摘要翻译： 等离子体处理装置包括等离子体源，其被配置为在等离子体室中产生等离子体，使得等离子体包含用于注入工件的离子。 该装置还包括聚焦板装置，该聚焦板装置具有孔结构，其被配置为修改离开聚焦板附近的等离子体鞘的等离子体鞘的形状，使得离开孔结构的孔的离子限定聚焦离子。 该设备还包括处理室，其包含与聚焦板间隔开的工件，使得在工件处的聚焦离子的固定注入区域基本上比孔更窄。 该装置被配置为通过在离子注入期间扫描工件来在工件中产生多个图案化区域。

公开(公告)号：US20090124066A1

公开(公告)日：2009-05-14

申请号：US12269344

申请日：2008-11-12

申请人： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

发明人： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

IPC分类号： H01L21/20

CPC分类号： H01L21/02689 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/268 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

公开(公告)号：US08659229B2

公开(公告)日：2014-02-25

申请号：US13108052

申请日：2011-05-16

申请人： Peter Kurunczi ,  Frank Sinclair ,  Costel Biloiu ,  Ludovic Godet ,  Ernest Allen

发明人： Peter Kurunczi ,  Frank Sinclair ,  Costel Biloiu ,  Ludovic Godet ,  Ernest Allen

IPC分类号： H05H1/24

CPC分类号： H01J37/08 ,  H01J37/3171 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32669

摘要： A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.

摘要翻译： 公开了一种等离子体处理装置和方法，其在外壳内产生均匀的等离子体。 在一个实施例中，导电或铁氧体材料用于影响天线的一部分，其中一部分由多个线圈段的部分组成。 在另一个实施例中，铁氧体材料用于影响天线的一部分。 在另一个实施例中，通过改变外壳的内部形状和体积来提高等离子体的均匀性。

公开(公告)号：US20120293070A1

公开(公告)日：2012-11-22

申请号：US13108052

申请日：2011-05-16

申请人： Peter Kurunczi ,  Frank Sinclair ,  Costel Biloiu ,  Ludovic Godet ,  Ernest Allen

发明人： Peter Kurunczi ,  Frank Sinclair ,  Costel Biloiu ,  Ludovic Godet ,  Ernest Allen

IPC分类号： H05H1/24

CPC分类号： H01J37/08 ,  H01J37/3171 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32669

摘要： A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.

摘要翻译： 公开了一种等离子体处理装置和方法，其在外壳内产生均匀的等离子体。 在一个实施例中，导电或铁氧体材料用于影响天线的一部分，其中一部分由多个线圈段的部分组成。 在另一个实施例中，铁氧体材料用于影响天线的一部分。 在另一个实施例中，通过改变外壳的内部形状和体积来提高等离子体的均匀性。

公开(公告)号：US08003498B2

公开(公告)日：2011-08-23

申请号：US12269344

申请日：2008-11-12

申请人： Jonathan G. England ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

发明人： Jonathan G. England ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02689 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/268 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the first region without forming another crystal in a second region, the second region adjacent to the first region; and extending the grain boundary of the at least one crystal formed in the first region to the second region after stopping the introducing the plurality of first particles.

摘要翻译： 公开了用于处理基板的方法的几个实例。 在特定实施例中，该方法可以包括：将多个第一粒子引入到衬底的第一区域，以便在第一区域中形成至少一个具有晶界的晶体，而不在第二区域中形成另一晶体， 邻近第一区域的区域; 并且在停止引入多个第一颗粒之后，将形成在第一区域中的至少一个晶体的晶界延伸到第二区域。

公开(公告)号：US20090124065A1

公开(公告)日：2009-05-14

申请号：US12269327

申请日：2008-11-12

申请人： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

发明人： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

IPC分类号： H01L21/20

CPC分类号： H01L21/02689 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/268 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

摘要翻译： 公开了用于处理衬底的方法的几个实例。 在特定实施例中，该方法可以包括：将具有上表面和下表面的基底设置在容纳在腔室中的压板上; 在所述基板的上表面上方产生含有多个带电粒子的等离子体，所述等离子体的截面积等于或大于所述基板的上表面的表面积; 向所述衬底施加第一偏置电压以将所述带电粒子吸引到所述衬底的上表面; 将带电粒子引入到在基板的整个上表面下延伸的区域; 并且在从非晶相到结晶相的区域中同时引发第一相转变。

公开(公告)号：US08679356B2

公开(公告)日：2014-03-25

申请号：US13111657

申请日：2011-05-19

申请人： Alexander C. Kontos ,  Frank Sinclair ,  Anthony Renau

发明人： Alexander C. Kontos ,  Frank Sinclair ,  Anthony Renau

IPC分类号： B44C1/22

CPC分类号： G11B5/855

摘要： A method of patterning a substrate, comprises patterning a photoresist layer disposed on the substrate using imprint lithography and etching exposed portions of a hard mask layer disposed between the patterned photoresist layer and the substrate. The method may also comprise implanting ions into a magnetic layer in the substrate while the etched hard mask layer is disposed thereon.

摘要翻译： 图案化衬底的方法包括使用压印光刻图案化设置在衬底上的光致抗蚀剂层，并蚀刻设置在图案化的光致抗蚀剂层和衬底之间的硬掩模层的暴露部分。 该方法还可以包括将离子注入到衬底中的磁性层中，同时将蚀刻的硬掩模层设置在其上。

公开(公告)号：US20120292285A1

公开(公告)日：2012-11-22

申请号：US13111657

申请日：2011-05-19

申请人： Alexander C. Kontos ,  Frank Sinclair ,  Anthony Renau

发明人： Alexander C. Kontos ,  Frank Sinclair ,  Anthony Renau

IPC分类号： G11B5/84 ,  C23C14/48 ,  C23C14/04

CPC分类号： G11B5/855

摘要： A method of patterning a substrate, comprises patterning a photoresist layer disposed on the substrate using imprint lithography and etching exposed portions of a hard mask layer disposed between the patterned photoresist layer and the substrate. The method may also comprise implanting ions into a magnetic layer in the substrate while the etched hard mask layer is disposed thereon.

摘要翻译： 图案化衬底的方法包括使用压印光刻图案化设置在衬底上的光致抗蚀剂层，并蚀刻设置在图案化的光致抗蚀剂层和衬底之间的硬掩模层的暴露部分。 该方法还可以包括将离子注入到衬底中的磁性层中，同时将蚀刻的硬掩模层设置在其上。

公开(公告)号：US08460748B2

公开(公告)日：2013-06-11

申请号：US12855399

申请日：2010-08-12

申请人： Frank Sinclair ,  Vikram Singh

发明人： Frank Sinclair ,  Vikram Singh

IPC分类号： B05D5/12

CPC分类号： G11B5/012 ,  B82Y10/00 ,  G11B5/743

摘要： An improved patterned magnetic bit data storage media and a method for manufacturing the same is disclosed. In one particular exemplary embodiment, the improved patterned magnetic bit data storage media may comprise an active region exhibiting substantially ferromagnetism; and an inactive region exhibiting substantially paramagnetism, the inactive region comprising at least two grains and a grain boundary interposed therebetween, wherein each of the at least two grains contain ferromagnetic material, and wherein the at least two grains are antiferromagnetically coupled.

摘要翻译： 公开了一种改进的图案化磁位数据存储介质及其制造方法。 在一个特定示例性实施例中，改进的图案化磁位数据存储介质可以包括显示出基本上铁磁性的有源区; 和表现出基本上顺磁性的非活性区域，所述非活性区域包含至少两个晶粒和插入其间的晶界，其中所述至少两个晶粒中的每一个含有铁磁材料，并且其中所述至少两个晶粒是反铁磁耦合的。

公开(公告)号：US20120088035A1

公开(公告)日：2012-04-12

申请号：US13270644

申请日：2011-10-11

申请人： Shengwu Chang ,  Joseph C. Olson ,  Frank Sinclair ,  Matthew P. McClellan ,  Antonella Cucchetti

发明人： Shengwu Chang ,  Joseph C. Olson ,  Frank Sinclair ,  Matthew P. McClellan ,  Antonella Cucchetti

IPC分类号： C23C14/48 ,  B21C51/00

CPC分类号： H01L21/67109 ,  H01L21/67288

摘要： A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed.

摘要翻译： 公开了一种用于保持期望的压板平整度的系统和方法。 激光系统用于测量压板的平整度。 然后改变压板的温度以达到所需的平坦度水平。 在一些实施例中，该激光系统仅在建立周期期间使用，然后在正常操作期间使用所得到的期望温度。 在其他实施例中，即使在正在处理工件时，也使用激光系统来测量压板的平坦度。