摘要:
Circuits and methods are provided for implementing highly efficient switch-mode power amplifiers using BJTs (bipolar junction transistors) as active switching devices at millimeter-wave frequencies. More specifically, circuits and methods are provided for driving power amplifiers with BJT switching devices to achieve highly efficient switch-mode (e.g., Class E) operation at millimeter wave frequencies (e.g., 60 GHz).
摘要:
An off-chip signal is provided to a differential branch-line directional coupler implemented entirely on-chip. The coupler produces differential quadrature signals, which are then buffered and applied to a quadrature mixer. The coupler is implemented entirely on-chip using microstrip transmission lines. The coupler is made up of a plurality of rings and a plurality of underpasses connecting ports of the rings, wherein each of the plurality of rings is made up of four branch lines, and each branch line having an electrical length of one-quarter wavelength at the center design frequency. Coupling between the plurality of branch lines of the rings may be varied.
摘要:
Circuits and methods are provided for building integrated transformer-coupled amplifiers with on-chip transformers that are designed to resonate or otherwise tune parasitic capacitances to achieve frequency tuning of amplifiers at millimeter wave operating frequencies.
摘要:
Shielded circuit pad is provided where the parasitic capacitance is tuned out by the inclusion of a shunt transmission line stub which reduces the substrate induced loss in millimeter-wave applications. The circuit pad is located on the substrate, with a shield located beneath the circuit pad, and the shunt transmission line stub attached to the circuit pad. Accordingly, controlled impedance is obtained for millimeter-wave applications. The spacing between the circuit pad and the shield may then be minimized.
摘要:
Circuits and methods are provided for building integrated transformer-coupled amplifiers with on-chip transformers that are designed to resonate or otherwise tune parasitic capacitances to achieve frequency tuning of amplifiers at millimeter wave operating frequencies.
摘要:
An off-chip signal is provided to a differential branch-line directional coupler implemented entirely on-chip. The coupler produces differential quadrature signals, which are then buffered and applied to a quadrature mixer. The coupler is implemented entirely on-chip using microstrip transmission lines. The coupler is made up of a plurality of rings and a plurality of underpasses connecting ports of the rings, wherein each of the plurality of rings is made up of four branch lines, and each branch line having an electrical length of one-quarter wavelength at the center design frequency. Coupling between the plurality of branch lines of the rings may be varied.
摘要:
The invention relates to devices comprising field effect transistors to detect the power of an electromagnetic high frequency signal VRF. According to the prior art, the high frequency signal is coupled into the gate G and via a capacitor CGD into the drain D of the field effect transistor FET, the gate G being biased with a direct voltage Vg which corresponds to the threshold value of the FET transistor. The resulting current at the source S contains a direct current portion Ids which is proportional to the square of the amplitude of the high frequency signal. The operating frequency of said power detectors is limited to a few gigahertz (GHz) by the discrete arrangement and especially by the predetermined gate length of the field effect transistor. The aim of the invention is to improve a resistive mixer in such a manner that it can be operated at high gigahertz and terahertz frequencies. For this purpose, the resistive mixer comprises a line which has a first and a second electrical conductor having respective connecting contacts so that an electrical high frequency signal can be coupled into the line, the first conductor having a plurality of series-connected voltage-dependent resistor elements (R) and at least one capacitive element (C) being interposed between the first and the second conductor.
摘要:
Printed antenna devices are provided, which can operate at RF and microwave frequencies, for example, while simultaneously providing antenna performance characteristics such as high gain/directivity/radiation efficiency, high bandwidth, hemispherical radiation patterns, impedance, etc., that render the antennas suitable for voice communication, data communication or radar applications, for example. Further, apparatus are provided for integrally packaging such printed antenna devices with IC (integrated circuit) chips (e.g., transceiver) to construct IC packages for, e.g., wireless communications applications.
摘要:
Apparatus and methods are provided for constructing waveguide-to-transmission line transitions that provide broadband, high performance coupling of power at microwave and millimeter wave frequencies. More specifically, exemplary embodiments of the invention include wideband, low-loss and compact CPW-to-rectangular waveguide transition structures and ACPS (or CPS)-to-rectangular waveguide transition structures that are particularly suitable for microwave and millimeter wave applications.
摘要:
Apparatus and methods are provided for integrally packaging semiconductor IC (integrated circuit) chips with antennas having one or more radiating elements and tuning elements that are formed from package lead wires that are appropriated shaped and arranged to form antenna structures for millimeter wave applications.