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公开(公告)号：US3942186A
公开(公告)日：1976-03-02
申请号：US554785
申请日：1975-03-03
申请人： Bruce R. McAvoy , Michael C. Driver
发明人： Bruce R. McAvoy , Michael C. Driver
CPC分类号： H01L29/00 , H01L21/00 , H01L29/812
摘要： A high frequency, Schottky barrier gate, field-effect transistor is provided with a substantially constant impedance over a broadband of frequencies. The transistor is comprised of a thin dielectric layer providing an effective dielectric constant at gate and drain contacts greater than .sqroot.2. The dielectric layer is supported on the major surface of a conductor substrate, and is preferably 5 microns in thickness and has a dielectric constant greater than about 5. The transistor is also comprised of a thin semiconductor layer of less than about 2 microns in thickness at least at gate portions with an N-type concentration of between about 5 .times. 10.sup.14 and 5 .times. 10.sup.17 carriers/cm.sup.3. The gate contact of the transistor is an elongated Schottky barrier contact adjoining the semiconductor layer spaced between elongated source and drain contacts which make ohmic contact with the semiconductor layer. Means are also provided to maintain the source contact at substantially the same RF potential as the conductor substrate.
摘要翻译： 高频肖特基势垒栅场效应晶体管在频率宽带上具有基本恒定的阻抗。 该晶体管由薄的电介质层组成，在大于2ROOT 2的栅极和漏极触点处提供有效介电常数。电介质层被支撑在导体衬底的主表面上，并且优选为5微米厚，并且具有介电常数 晶体管还包括厚度小于约2微米的薄半导体层，至少在栅极部分，N型浓度介于约5×1014至5×1017载体/厘米3之间。 晶体管的栅极接触是与在与半导体层欧姆接触的细长的源极和漏极接触之间隔开的半导体层相邻的细长的肖特基势垒接触。 还提供了用于将源极接触保持在与导体衬底基本相同的RF电位的装置。
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公开(公告)号：US5641975A
公开(公告)日：1997-06-24
申请号：US555935
申请日：1995-11-09
IPC分类号： H01L29/20 , H01L29/267 , H01L29/737 , H01L29/26
CPC分类号： H01L29/7371 , H01L29/267 , H01L29/2003
摘要： A heat tolerant, frequency responsive transistor for use in the microwave region includes a collector region, a base region overlying the collector region, and an emitter region including an AlGaN layer overlying at least part of said base region, forming a heterojunction between said base region and said emitter region. The emitter region may include two layers. The HBT may be mounted on a SiC or sapphire substrate. The HBT may include a buffer layer between the substrate and the collector region.
摘要翻译： 用于微波区域的耐热频率响应晶体管包括集电极区域，覆盖集电极区域的基极区域和包括覆盖在所述基极区域的至少一部分上的AlGaN层的发射极区域，在所述基极区域之间形成异质结 和所述发射极区域。 发射极区域可以包括两层。 HBT可以安装在SiC或蓝宝石衬底上。 HBT可以包括在衬底和收集器区域之间的缓冲层。
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公开(公告)号：US4176295A
公开(公告)日：1979-11-27
申请号：US915649
申请日：1978-06-15
申请人： Michael C. Driver , James G. Oakes , John R. Davis
发明人： Michael C. Driver , James G. Oakes , John R. Davis
摘要： A high peak power microwave generator is disclosed in which a plurality of transmission lines are connected to an output wave guide at predetermined intervals along the direction of propagation. Each transmission line is periodically charged, and this electromagnetic energy is released into the wave guide upon the actuation of a light activated silicon switch (LASS) diode connected to the transmission line. The LASS diodes are actuated simultaneously by a laser beam which traverses equal optical paths to each switch. The coincident switching of the transmission lines enables the power in each line to be additive in the wave guide, and much higher output pulses can be obtained. Further, the high speed switching capabilities afforded by the LASS diodes means that the resulting high power can be obtained at a much higher frequency.
摘要翻译： 公开了一种高峰值功率微波发生器，其中多个传输线沿着传播方向以预定间隔连接到输出波导。 每个传输线被周期性地充电，并且当连接到传输线的光激活硅开关（LASS）二极管的致动时，该电磁能被释放到波导中。 LASS二极管通过穿过每个开关相同光路的激光束同时启动。 传输线的重合切换使得每行中的功率在波导中是相加的，并且可以获得更高的输出脉冲。 此外，LASS二极管提供的高速切换功能意味着可以以更高的频率获得所得到的高功率。
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4.发明授权Application of facet-growth to self-aligned Shottky barrier gate field effect transistors 失效小面生长对自对准肖特基势垒栅场效应晶体管的应用
公开(公告)号：US3943622A
公开(公告)日：1976-03-16
申请号：US517284
申请日：1974-10-22
申请人： He B. Kim , Michael C. Driver
发明人： He B. Kim , Michael C. Driver
IPC分类号： H01L21/00 , H01L21/24 , H01L29/00 , H01L29/812 , H01L21/205 , H01L21/28 , H01L29/48
CPC分类号： H01L29/00 , H01L21/00 , H01L21/24 , H01L29/812 , Y10S148/026 , Y10S148/115 , Y10S148/139 , Y10S438/944
摘要： A semiconductor device and particularly a self-aligned Schottky barrier gate field-effect transistor is made by epitaxial growth of facets corresponding to the source and drain regions on a surface of a semiconductor body through spaced apart preferably elongated windows in a masking layer and overgrowing edge portions of the masking layer at the windows to form overgrown portions on the facets. The channel region of the transistor is previously formed in the semiconductor body, preferably by epitaxial growth of a layer on a surface of a semiconductor body having a semi-insulating layer adjoining the surface. After removal of the masking layer, the Schottky barrier gate is self-aligned by deposition of metal on the unshielded portions of the planar surface between the facets.
摘要翻译： 半导体器件，特别是自对准肖特基势垒栅场效应晶体管是通过在半导体主体的表面上对应于源极和漏极区域的面的外延生长而通过在掩模层中的间隔开的优选细长的窗口和过度生长边缘 在窗口处的掩模层的部分在小平面上形成长满的部分。 晶体管的沟道区预先形成在半导体本体中，优选地通过在邻接表面的半绝缘层的半导体本体的表面上外延生长层。 在去除掩模层之后，肖特基势垒栅极通过在面之间的平坦表面的非屏蔽部分上沉积金属而自对准。
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5.发明授权
公开(公告)号：US4922253A
公开(公告)日：1990-05-01
申请号：US292983
申请日：1989-01-03
CPC分类号： H01P1/10 , H01H59/0009 , H01Q15/002
摘要： A radio frequency transmitting shutter operable at low power and high speed for use in the protection of a radar or electronic warfare array comprising a multiplicity of individual conductive beam members interconnected by electrostatic switches formed using high yield, common photolithographic methods is disclosed. Further, a photosensitive embodiment of this device which would allow activation of the shutter wherever the light falls upon the shutter during radar protection, is disclosed and claimed.
摘要翻译： 公开了一种能够以低功率和高速度操作的射频发射快门，用于保护雷达或电子战阵列，其包括通过使用高产率，普通光刻方法形成的静电开关互连的多个单独的导电梁构件。 此外，公开和要求保护该装置的光敏实施例，其将允许在雷达保护期间光落在快门上的任何位置启动快门。
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公开(公告)号：US4904831A
公开(公告)日：1990-02-27
申请号：US293164
申请日：1989-01-03
申请人： Harvey C. Nathanson , Michael C. Driver , Michael W. Cresswell , Ronald G. Freitag , Donald K. Alexander , Daniel F. Yaw
发明人： Harvey C. Nathanson , Michael C. Driver , Michael W. Cresswell , Ronald G. Freitag , Donald K. Alexander , Daniel F. Yaw
CPC分类号： G01S7/032 , H01Q21/0025 , H01Q3/26
摘要： An improved phased-array active antenna transmit-receive means utilizing a multiplicity of individual transmit-receive cells positioned in an array format upon a common wafer of semiconductor material. Each transmit-receiver cell, comprises a multiplicity of redundant, integrated circuit, electronic devices implanted upon the common semiconductor substrate. The transmit-receive cells utilize novel mitered mechanical switches to permanently interconnect individual electronic devices into either transmit or receive circuits during the fabrication and test of the transmit-receive cells. Radio frequency and direct current input and output vias formed from a novel metal evaporation technique connect the devices upon the surface of the common semiconductor wafer to underlying, insulated direct current distribution circuits and a radio frequency manifold. This array of improved phased-array active antenna transmit-receive means comprised of transmit-receive cells sharing common central processing means, logic control and heat dissipation means results in a significant reduction in the size and weight of the standard phased-array active antenna system. This significant reduction in antenna system size and weight is very important in broad band electronic countermeasure systems or narrow band phased array active antenna radar systems as used in advanced tactical fighters, or space applications.
摘要翻译： 一种改进的相控阵有源天线发射 - 接收装置，利用位于半导体材料的公共晶片上的阵列格式的多个单独的发射 - 接收单元。 每个发射 - 接收器单元包括多个冗余的集成电路，注入到公共半导体衬底上的电子器件。 发射接收蜂窝小区利用新颖的倾斜机械开关，在发射接收小区的制造和测试期间，将各个电子设备永久地互连到发射或接收电路中。 由新型金属蒸发技术形成的射频和直流输入和输出通孔将公共半导体晶片的表面上的器件连接到下面的绝缘直流分配电路和射频歧管。 由共享公共中央处理装置，逻辑控制和散热装置的发射 - 接收单元组成的改进的相控阵有源天线发射 - 接收装置阵列导致标准相控阵有源天线系统的尺寸和重量的显着降低 。 天线系统尺寸和重量的显着降低对于在高级战术战机或空间应用中使用的宽带电子对抗系统或窄带相控阵有源天线雷达系统是非常重要的。
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公开(公告)号：US4381341A
公开(公告)日：1983-04-26
申请号：US344467
申请日：1982-02-01
IPC分类号： H01L21/306 , H01L21/768 , H01L23/535 , H01L21/312 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L23/535 , H01L21/30612 , H01L21/76898 , H01L2924/0002 , H01L2924/3011 , Y10S438/928 , Y10S438/977
摘要： Electrical interconnection paths or vias are provided through relatively thick type III/V semiconductive substrates, such as gallium arsenide, to permit through the substrate electrical interconnection of planar transistor devices. The vias are etched in a two-step process which ensures that the via lateral dimensions are less than the transistor contacts with which they are aligned. The first step comprises selectively thinning the thick substrate from the back surface over an area which encompasses the transistor array formed in the front surface of the substrate. The second step is to etch the individual vias through this prior thinned substrate at areas aligned with the transistor contacts.
摘要翻译： 通过诸如砷化镓的相对厚的类型III / V半导体衬底提供电互连通路或通孔，以允许平面晶体管器件的衬底电互连。 通孔以两步法进行蚀刻，这确保通孔横向尺寸小于它们对准的晶体管触点。 第一步骤包括在包围形成在衬底的前表面中的晶体管阵列的区域上从后表面选择性地稀薄厚衬底。 第二步是在与晶体管触点对准的区域处蚀刻通过该先前减薄的衬底的各个通孔。
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公开(公告)号：US5923058A
公开(公告)日：1999-07-13
申请号：US795807
申请日：1997-02-05
IPC分类号： H01L29/20 , H01L29/267 , H01L29/737
CPC分类号： H01L29/7371 , H01L29/267 , H01L29/2003
摘要： A heat tolerant, frequency responsive transistor for use in the microwave region includes a collector region, a base region overlying the collector region, and an emitter region including an AlGaN layer overlying at least part of said base region, forming a heterojunction between said base region and said emitter region. The emitter region may include two layers. The HBT may be mounted on a SiC or sapphire substrate. The HBT may include a buffer layer between the substrate and the collector region.
摘要翻译： 用于微波区域的耐热频率响应晶体管包括集电极区域，覆盖集电极区域的基极区域和包括覆盖在所述基极区域的至少一部分上的AlGaN层的发射极区域，在所述基极区域之间形成异质结 和所述发射极区域。 发射极区域可以包括两层。 HBT可以安装在SiC或蓝宝石衬底上。 HBT可以包括在衬底和收集器区域之间的缓冲层。
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公开(公告)号：US4894114A
公开(公告)日：1990-01-16
申请号：US292973
申请日：1989-01-03
申请人： Harvey C. Nathanson , Michael C. Driver , Michael W. Cresswell , Ronald G. Freitag , Donald K. Alexander , Daniel F. Yaw
发明人： Harvey C. Nathanson , Michael C. Driver , Michael W. Cresswell , Ronald G. Freitag , Donald K. Alexander , Daniel F. Yaw
CPC分类号： H01Q21/0025 , G01S7/032 , H01Q3/26 , Y10S438/928 , Y10S438/944
摘要： An improved phased-array active antenna transmit-receive means utilizing a multiplicity of individual transmit-receive cells positioned in an array format upon a common wafer of semiconductor material. Each transmit-receive cell, comprises a multiplicity of redundant, integrated circuit, electronic devices implanted upon the common semiconductor substrate. The transmit-receive cells utilize novel mitered mechanical switches to permanently interconnect individual electronic devices into either transmit or receive circuits during the fabrication and test of the transmit-receive cells. Radio frequency and direct current input and output vias formed from a novel metal evaporation technique connect the devices upon the surface of the common semiconductor wafer to underlying, insulated direct current distribution circuits and a radio frequency manifold. This array of improved phased-array active antenna transmit-receive means comprised of transmit-receive cells sharing common central processing means, logic control and heat dissipation means results in a significant reduction in the size and weight of the standard phased-array active antenna system. This significant reduction in antenna system size and weight is very important in broad band electronic countermeasure systems or narrow band phased array active antenna radar systems as used in advanced tactical fighters, or space applications.
摘要翻译： 一种改进的相控阵有源天线发射 - 接收装置，利用位于半导体材料的公共晶片上的阵列格式的多个单独的发射 - 接收单元。 每个发射 - 接收单元包括多个冗余的集成电路，注入到公共半导体衬底上的电子器件。 发射接收蜂窝小区利用新颖的倾斜机械开关，在发射接收小区的制造和测试期间，将各个电子设备永久地互连到发射或接收电路中。 由新型金属蒸发技术形成的射频和直流输入和输出通孔将公共半导体晶片的表面上的器件连接到下面的绝缘直流分配电路和射频歧管。 由共享公共中央处理装置，逻辑控制和散热装置的发射 - 接收单元组成的改进的相控阵有源天线发射 - 接收装置阵列导致标准相控阵有源天线系统的尺寸和重量的显着降低 。 天线系统尺寸和重量的显着降低对于在高级战术战机或空间应用中使用的宽带电子对抗系统或窄带相控阵有源天线雷达系统是非常重要的。
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公开(公告)号：US5198695A
公开(公告)日：1993-03-30
申请号：US624783
申请日：1990-12-10
IPC分类号： H01L23/373 , H01L23/498
CPC分类号： H01L23/49866 , H01L23/3731 , H01L23/49827 , H01L2924/0002
摘要： A bonded structure is described consisting of a semiconductor wafer, preferably gallium arsenide, soldered to a substrate material. A method for forming the structure is also described. The structure provides mechanical support and thermal conductivity for the wafer, as well as a multitude of connections through the substrate material at predetermined locations on the wafer. The substrate material and the soldering process are selected to minimize the resulting stresses in the wafer. A pattern of pads consisting of a refractory metal covered by a solder material is formed on the substrate to maintain space for excess solder in order to avoid the shorting of the individual connections on the wafer, and to control the size and location of voids in the solder upon solidification.
摘要翻译： 描述了焊接到基底材料的半导体晶片，优选砷化镓的结合结构。 还描述了用于形成结构的方法。 该结构为晶片提供机械支撑和导热性，以及在晶片上的预定位置处通过衬底材料的多个连接。 选择衬底材料和焊接工艺以最小化晶片中产生的应力。 在衬底上形成由焊料材料覆盖的难熔金属组成的衬垫图案，以保持多余焊料的空间，以避免晶片上的各个连接的短路，并且控制空隙的尺寸和位置 焊后固化。
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