公开(公告)号：US10806990B2

公开(公告)日：2020-10-20

申请号：US16028613

申请日：2018-07-06

申请人： Byoung Koo Cho ,  Chang Suk Han ,  Chang Hee Chun ,  Bo Sub Kim ,  Yeon Uk Jeong

发明人： Byoung Koo Cho ,  Chang Suk Han ,  Chang Hee Chun ,  Bo Sub Kim ,  Yeon Uk Jeong

IPC分类号： A63C19/02

摘要： The present invention relates to an inclined structure of a court floor having a new structure for easily collecting automatically supplying balls used in practice. According to an inclined structure of a court floor according to the present disclosure, the ball used for practice can be rolled down outwardly along the slope of the court, and then be collected in the collecting ditch and gathered in one place, so there is no need to collect scattered balls separately.

公开(公告)号：US08357924B2

公开(公告)日：2013-01-22

申请号：US12983499

申请日：2011-01-03

申请人： Kwang Joong Kim ,  Chang Suk Han ,  Kyung Hee Ye ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

发明人： Kwang Joong Kim ,  Chang Suk Han ,  Kyung Hee Ye ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

IPC分类号： H01L31/00

CPC分类号： H01L33/06 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L33/32

摘要： Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

公开(公告)号：US07755176B1

公开(公告)日：2010-07-13

申请号：US11111316

申请日：2005-04-21

申请人： Roger D. St. Amand ,  Chang Suk Han ,  Alexander W. Copia ,  Wan Wook Ko

发明人： Roger D. St. Amand ,  Chang Suk Han ,  Alexander W. Copia ,  Wan Wook Ko

IPC分类号： H01L23/02

CPC分类号： H01L23/49838 ,  H01L23/3128 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/32057 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48699 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83385 ,  H01L2224/838 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A die-mounting substrate and method incorporating dummy traces for improving mounting film planarity makes the use of film attach possible with a simplified manufacturing process and in applications where film-attach was not previously practical. The die-mounting substrate includes dummy traces that are generated along with signal traces extending into the die mounting area of the substrate. The dummy traces are designed according to the same design rules as the signal traces and are disposed in otherwise empty regions between signal traces and vias within the die mounting area. The result is die mounting area without regions empty of signal traces that previously either lack conductor or are filled completely with conductor, either of which will result in surface variation that compromises the film bond.

摘要翻译： 具有用于改善安装膜平面性的虚设轨迹的芯片安装基板和方法使得可以利用简化的制造工艺和薄膜附着在以前不可行的应用中使用膜附着。 管芯安装衬底包括与延伸到衬底的管芯安装区域中的信号迹线一起产生的虚拟迹线。 虚设轨迹根据与信号迹线相同的设计规则设计，并且设置在信号迹线和管芯安装区域内的通孔之间的空白区域中。 结果是裸片安装区域没有空的信号迹线，以前没有导体或完全填充导体，其中任何一个将导致表面变化，从而影响膜结合。

公开(公告)号：US20090291519A1

公开(公告)日：2009-11-26

申请号：US12535244

申请日：2009-08-04

申请人： Gyu Beom KIM ,  Sang Joon Lee ,  Chang Suk Han ,  Kwang Choong Kim

发明人： Gyu Beom KIM ,  Sang Joon Lee ,  Chang Suk Han ,  Kwang Choong Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/3063 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04

摘要： Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.

摘要翻译： 本文公开了一种发光器件。 发光器件包括n型氮化物半导体层; 在n型半导体层上的有源层，通过在有源层上交替生长AlN层和GaN层而形成的超晶格结构的AlN / GaN层和AlN / GaN上的p型氮化物半导体层 层的超晶格结构。 AlN层和GaN层中的至少一个掺杂有p型掺杂剂。 还提供了一种用于制造发光器件的方法。

公开(公告)号：US20100216272A1

公开(公告)日：2010-08-26

申请号：US12775119

申请日：2010-05-06

申请人： Gyu Beom Kim ,  Sang Joon Lee ,  Chang Suk Han ,  Kwang Choong Kim

发明人： Gyu Beom Kim ,  Sang Joon Lee ,  Chang Suk Han ,  Kwang Choong Kim

IPC分类号： H01L21/20

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/3063 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04

摘要： Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.

摘要翻译： 本文公开了一种发光器件。 发光器件包括n型氮化物半导体层; 在n型半导体层上的有源层，通过在有源层上交替生长AlN层和GaN层而形成的超晶格结构的AlN / GaN层和AlN / GaN上的p型氮化物半导体层 层的超晶格结构。 AlN层和GaN层中的至少一个掺杂有p型掺杂剂。 还提供了一种用于制造发光器件的方法。

公开(公告)号：US08716048B2

公开(公告)日：2014-05-06

申请号：US12775119

申请日：2010-05-06

申请人： Gyu Beom Kim ,  Sang Joon Lee ,  Chang Suk Han ,  Kwang Choong Kim

发明人： Gyu Beom Kim ,  Sang Joon Lee ,  Chang Suk Han ,  Kwang Choong Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/3063 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04

摘要： Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.

摘要翻译： 本文公开了一种发光器件。 发光器件包括n型氮化物半导体层; 在n型半导体层上的有源层，通过在有源层上交替生长AlN层和GaN层而形成的超晶格结构的AlN / GaN层和AlN / GaN上的p型氮化物半导体层 层的超晶格结构。 AlN层和GaN层中的至少一个掺杂有p型掺杂剂。 还提供了一种用于制造发光器件的方法。

公开(公告)号：US08716046B2

公开(公告)日：2014-05-06

申请号：US12535244

申请日：2009-08-04

申请人： Gyu Beom Kim ,  Sang Joon Lee ,  Chang Suk Han ,  Kwang Choong Kim

发明人： Gyu Beom Kim ,  Sang Joon Lee ,  Chang Suk Han ,  Kwang Choong Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/3063 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04

摘要： Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.

公开(公告)号：US08470626B2

公开(公告)日：2013-06-25

申请号：US13150759

申请日：2011-06-01

申请人： Kwang Joong Kim ,  Chang Suk Han ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

发明人： Kwang Joong Kim ,  Chang Suk Han ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

IPC分类号： H01L21/00

CPC分类号： H01L33/007

摘要： Exemplary embodiments of the present invention relate to a method of fabricating a light emitting diode (LED). According to an exemplary embodiment of the present invention, the method includes growing a first GaN-based semiconductor layer on a substrate at a first temperature by supplying a chamber with a nitride source gas and a first metal source gas, stopping the supply of the first metal source gas and maintaining the first temperature for a first time period after stopping the supply of the first metal source gas, decreasing the temperature of the substrate to the a second temperature after the first time period elapses, growing an active layer of the first GaN-based semiconductor layer at the second temperature by supplying the chamber with a second metal source gas.

摘要翻译： 本发明的示例性实施例涉及一种制造发光二极管（LED）的方法。 根据本发明的示例性实施例，该方法包括通过向室提供氮化物源气体和第一金属源气体，在第一温度下在衬底上生长第一GaN基半导体层，停止第一 金属源气体，并且在停止第一金属源气体的供给之后保持第一温度第一温度，在第一时间段之后将衬底的温度降低到第二温度，生长第一GaN的有源层 在第二温度下通过向腔室供应第二金属源气体。