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    Method of Forming a Crystallized Silicon Layer on the Surface of a Plurality of Substrates
    3.
    发明申请
    Method of Forming a Crystallized Silicon Layer on the Surface of a Plurality of Substrates 审中-公开
    在多个基板的表面上形成结晶硅层的方法

    公开(公告)号：US20140261156A1

    公开(公告)日：2014-09-18

    申请号：US14349987

    申请日：2012-10-02

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

    发明人： Virginie Brize ,  Jean-Paul Garandet ,  Stephen Giraud ,  Etienne Pihan

    IPC分类号： C30B19/02 ,  C30B19/06

    CPC分类号： C30B19/02 ,  C30B19/062 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02625 ,  H01L21/02628

    摘要： The present invention concerns a method of forming, by liquid phase epitaxial growth, on the surface of a plurality of substrates, a layer of crystallised silicon having a grain size greater than or equal to 200 μm, comprising at least the steps consisting of: (i) arranging a liquid bath formed from a liquid metal solvent phase in which liquid silicon is homogeneously dispersed; (ii) immersing, in the bath of step (i), said substrates (1), in such a way that each of the surfaces of the substrates (1) that need to be coated is in contact with the liquid bath, said surfaces being arranged parallel to one another, and perpendicularly to the interface (3) of the liquid bath (2) and the gas atmosphere (4) contiguous to said liquid bath or according to an inclination angle of at least 45° in relation to said interface (3); (iii) imposing, on the whole of step (ii), conditions conducive to the vaporisation of said liquid solvent phase and to the establishing of a natural convection movement of the liquid bath in the vicinity of the surfaces to be coated of the substrates, which are held in fixed position; and (iv) recovering the substrates coated with the crystallised silicon layer formed at the end of step (iii).

    摘要翻译： 本发明涉及通过液相外延生长在多个基板的表面上形成具有大于或等于200μm的晶粒尺寸的结晶硅层的方法，至少包括以下步骤：（ i）布置由液态硅均匀分散的液态金属溶剂相形成的液浴; （ii）将所述基板（1）浸入步骤（i）的槽中，使得需要涂布的基板（1）的每个表面与液槽接触，所述表面 彼此平行并且垂直于液槽（2）的界面（3）和与所述液槽相邻的气体气氛（4），或者相对于所述界面的至少45°的倾斜角度 （3）; （iii）在整个步骤（ii）中施加有助于所述液体溶剂相的蒸发的条件以及在待涂布的表面附近建立液槽的自然对流运动， 固定位置; 和（iv）回收涂有步骤（iii）末端形成的结晶硅层的基材。

    Method for forming an epitactic silicon layer
    5.
    发明授权
    Method for forming an epitactic silicon layer 有权
    形成外延硅层的方法

    公开(公告)号：US09373504B2

    公开(公告)日：2016-06-21

    申请号：US14403915

    申请日：2013-05-22

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

    发明人： Jean-Paul Garandet ,  Etienne Pihan

    IPC分类号： H01L21/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/20 ,  C30B29/06 ,  H01L21/306 ,  H01L21/3065

    CPC分类号： H01L21/02636 ,  C30B19/12 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02439 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02634 ,  H01L21/02639 ,  H01L21/30604 ,  H01L21/3065

    摘要： The present invention relates to a method for manufacturing an epitactic silicon layer made up of crystallites with a size no lower than 20 μm, including: providing a layer of crystallized silicon the surface of which, being inhomogeneous in terms of the size of the crystallites, is made up of large crystallites with a size no lower than 20 μm, and small crystallites of a smaller size; forming, on the surface of the inhomogeneous silicon layer, a layer of at least one non-nucleating material for the silicon, the thickness of which is adjusted such to cover the entire outer surface of the small crystallites, while leaving all or part of the outer surface of the large crystallites accessible; and carrying out epitaxial growth of a silicon layer on the surface of the assembly obtained at the end of step, under conditions that are suitable for forming the expected epitactic layer.

    摘要翻译： 本发明涉及一种制造尺寸不小于20μm的微晶构成的中空硅层的方法，包括：提供一层结晶硅，其表面在微晶尺寸方面不均匀， 由尺寸不小于20μm的大晶体和较小尺寸的小晶体构成; 在不均匀硅层的表面上形成用于硅的至少一种非成核材料的层，其厚度被调节以覆盖小微晶的整个外表面，同时留下全部或部分 大晶粒的外表面可达; 并且在适于形成预期的中空层的条件下，在步骤结束时获得的组件的表面上进行硅层的外延生长。

    METHOD FOR FORMING AN EPITACTIC SILICON LAYER
    6.
    发明申请
    METHOD FOR FORMING AN EPITACTIC SILICON LAYER 有权
    形成硅橡胶层的方法

    公开(公告)号：US20150155168A1

    公开(公告)日：2015-06-04

    申请号：US14403915

    申请日：2013-05-22

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

    发明人： Jean-Paul Garandet ,  Etienne Pihan

    IPC分类号： H01L21/02 ,  H01L21/3065 ,  H01L21/306

    CPC分类号： H01L21/02636 ,  C30B19/12 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02439 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02634 ,  H01L21/02639 ,  H01L21/30604 ,  H01L21/3065

    摘要： The present invention relates to a method for manufacturing an epitactic silicon layer made up of crystallites with a size no lower than 20 μm, including: providing a layer of crystallised silicon the surface of which, being inhomogeneous in terms of the size of the crystallites, is made up of large crystallites with a size no lower than 20 μm, and small crystallites of a smaller size; forming, on the surface of the inhomogeneous silicon layer, a layer of at least one non-nucleating material for the silicon, the thickness of which is adjusted such to cover the entire outer surface of the small crystallites, while leaving all or part of the outer surface of the large crystallites accessible; and carrying out epitaxial growth of a silicon layer on the surface of the assembly obtained at the end of step, under conditions that are suitable for forming the expected epitactic layer.

    摘要翻译： 本发明涉及一种制造尺寸不小于20μm的微晶构成的中空硅层的方法，包括：提供一层结晶硅，其表面在微晶尺寸方面不均匀， 由尺寸不小于20μm的大晶体和较小尺寸的小晶体构成; 在不均匀硅层的表面上形成用于硅的至少一种非成核材料的层，其厚度被调节以覆盖小微晶的整个外表面，同时留下全部或部分 大晶粒的外表面可达; 并且在适于形成预期的中空层的条件下，在步骤结束时获得的组件的表面上进行硅层的外延生长。

    Method for Preparing a Coarse-Grain Crystallized Silicon Layer
    8.
    发明申请
    Method for Preparing a Coarse-Grain Crystallized Silicon Layer 有权
    制备粗晶粒结晶硅层的方法

    公开(公告)号：US20150079772A1

    公开(公告)日：2015-03-19

    申请号：US14391865

    申请日：2013-04-08

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  S'TILE

    发明人： Jean-Paul Garandet ,  Virginie Brize ,  Etienne Pihan ,  Alain Straboni ,  Florent Dupont

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02667 ,  C30B1/02 ,  C30B13/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02612 ,  H01L21/02628 ,  H01L31/03682 ,  H01L31/182 ,  H01L31/1872 ,  Y02E10/546 ,  Y02P70/521

    摘要： The present invention relates to a method for forming a crystallised silicon layer made up of grains having an average size of no less than 20 μm, including at least the steps that comprise: (1) providing a layer of silicon to be (re)crystallised, the average grain size of which is less than 10 μm; (2) placing said layer of silicon to be (re)crystallised in contact with a liquid composition at least partially made up of a metal solvent; and (3) exposing the assembly to a thermal treatment suitable for (re)crystallising said layer of silicon with the expected grain size, characterised in that said thermal treatment includes heating the assembly made up of the layer of silicon in contact with said liquid composition to a temperature that is lower than 1410° C. and at least equal to the eutectic temperature in the solvent-silicon phase diagram.

    摘要翻译： 本发明涉及一种形成由平均粒径不小于20μm的晶粒构成的结晶硅层的方法，至少包括以下步骤：（1）提供待重结晶的硅层 其平均粒径小于10μm; （2）将所述硅层重新结晶化，至少部分地由金属溶剂组成的液体组合物接触; 和（3）将所述组件暴露于适合于使所述硅的所述硅层结晶的预热晶粒度的热处理，其特征在于，所述热处理包括加热由与所述液体组合物接触的硅层组成的组件 达到低于1410℃的温度，并且至少等于溶剂 - 硅相图中的共晶温度。