摘要:
An inductor-capacitor phase locked loop (LCPLL) includes an inductor-capacitor voltage controlled oscillator (LCVCO) that provides an output frequency. A calibration circuit includes two comparators and provides a coarse tune signal to the LCVCO. The two comparators respectively compare the loop filter signal with a first reference voltage and a second reference voltage that is higher than the first reference voltage to supply a first and second comparator output, respectively. The calibration circuit is capable of adjusting the coarse tune signal continuously in voltage values and adjusts the coarse tune signal based on the two comparator outputs. A loop filter provides a loop filter signal to the calibration circuit and a fine tune signal to the LCVCO. A coarse tune frequency range is greater than a fine tune frequency range.
摘要:
A PLL circuit includes a phase frequency detector; a programmable charge pump coupled to an output of the phase frequency detector; a loop filter coupled to an output of the charge pump, the loop filter providing a fine tuning voltage; a first voltage-to-current converter, the first voltage-to-current converter providing a fine tuning current corresponding to the fine tuning voltage; a current-controlled oscillator (CCO); a feedback divider coupled to an output of the CCO and an input of the phase frequency detector; and an analog calibration circuit. The analog calibration circuit provides a coarse adjustment current for coarse adjustments to a frequency pivot point for an oscillator frequency of the CCO, wherein the CCO generates a frequency signal at an output responsive to a summed coarse adjustment and fine tuning current, wherein the frequency pivot point is continuously adjustable.
摘要:
A clock and data recovery (CDR) circuit includes an inductor-capacitor voltage controlled oscillator (LCVCO) configured to generate a clock signal with a clock frequency. A delay locked loop (DLL) is configured to receive the clock signal from the LCVCO and generate multiple clock phases. A charge pump is configured to control the LCVCO. A phase detector is configured to receive a data input and the multiple clock phases from the DLL, and to control the first charge pump in order to align a data edge of the data input and the multiple clock phases.
摘要:
A level shifter includes one PMOS and two NMOS transistors. A source of the first NMOS transistor is coupled to a low power supply voltage. An input signal is coupled to a gate of the first NMOS transistor and a source of the second NMOS transistor. The input signal has a voltage level up to a first power supply voltage. A source of the PMOS transistor is coupled to a second power supply voltage, higher than the first power supply voltage. An output signal is coupled between the PMOS and the first NMOS transistors. The first NMOS transistor is arranged to pull down the output signal when the input signal is a logical 1, and the second NMOS transistor is arranged to enable the PMOS transistor to pull up the output signal to a logical 1 at the second power supply voltage when the input signal is a logical 0.
摘要:
A level shifter includes an input node, an output node, a pull-up transistor, a pull-down transistor, and at least one diode-connected device coupled between the pull-up transistor and the pull-down transistor. The level shifter is arranged to be coupled to a high power supply voltage, to receive an input signal having a first voltage level at the input node, and to supply an output signal having a second voltage level at the output node. The high power supply voltage is higher than the first voltage level. The at least one diode-connected device allows the output signal to be pulled up to about a first diode voltage drop below the high power supply voltage and/or to be pulled down to about a second diode voltage drop above ground. The first diode voltage drop and the second diode voltage drop are from the at least one diode-connected device.
摘要:
A method of forming an integrated circuit includes forming at least one transistor over a substrate. Forming the at least one transistor includes forming a gate dielectric structure over a substrate. A work-function metallic layer is formed over the gate dielectric structure. A conductive layer is formed over the work-function metallic layer. A source/drain (S/D) region is formed adjacent to each sidewall of the gate dielectric structure. At least one electrical fuse is formed over the substrate. Forming the at least one electrical fuse includes forming a first semiconductor layer over the substrate. A first silicide layer is formed on the first semiconductor layer.
摘要:
A method of designing an integrated circuit includes providing a cell library including a first and second cell structures. The cell structures each include a dummy gate electrode disposed on a boundary. An edge gate electrode is disposed adjacent to the dummy gate electrode. An oxide definition (OD) region has an edge disposed between the edge gate electrode and the dummy gate electrode. The method includes determining if the cell structures are to be abutted with each other. If so, the method includes abutting the cell structures. If not so, the method includes increasing areas of portions of the OD regions between the edge gate electrodes and the dummy gate electrodes.
摘要:
A method of forming an integrated circuit includes forming at least one transistor over a substrate. The at least one transistor includes a first gate dielectric structure disposed over a substrate. A work-function metallic layer is disposed over the first gate dielectric structure. A conductive layer is disposed over the work-function metallic layer. A source/drain (S/D) region is disposed adjacent to each sidewall of the first gate dielectric structure. At least one resistor structure is formed over the substrate. The at least one resistor structure includes a first doped semiconductor layer disposed over the substrate. The at least one resistor structure does not include any work-function metallic layer between the first doped semiconductor layer and the substrate.
摘要:
A circuit includes a capacitive-load voltage controlled oscillator having an input configured to receive a first input signal and an output configured to output an oscillating output signal. A calibration circuit is coupled to the voltage controlled oscillator and is configured to output one or more control signals to the capacitive-load voltage controlled oscillator for adjusting a frequency of the oscillating output signal. The calibration circuit is configured to output the one or more control signals in response to a comparison of an input voltage to at least one reference voltage.
摘要:
Some aspects of the present disclosure provide for a method of automatically balancing mask misalignment for multiple patterning layers to minimize the consequences of mask misalignment. In some embodiments, the method defines a routing grid for one or more double patterning layers within an IC layout. The routing grid has a plurality of vertical grid lines extending along a first direction and a plurality of horizontal grid lines extending along a second, orthogonal direction. Alternating lines of the routing grid in a given direction (e.g., the horizontal and vertical direction) are assigned different colors. Shapes on the double patterning layers are then routed along the routing grid in a manner that alternates between different colored grid lines. By routing in such a manner, variations in capacitive coupling caused by mask misalignment are reduced.