公开(公告)号：US20100052155A1

公开(公告)日：2010-03-04

申请号：US12614945

申请日：2009-11-09

申请人： Che-Jung Chang ,  Chin-Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Jack Chang Chien ,  Ning Liu

发明人： Che-Jung Chang ,  Chin-Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Jack Chang Chien ,  Ning Liu

IPC分类号： H01L23/04

CPC分类号： G06K19/077 ,  B29C45/14311 ,  B29C45/14647 ,  B29C2045/14327 ,  G06K19/07724 ,  G06K19/07732 ,  H01L23/10 ,  H01L23/544 ,  H01L24/48 ,  H01L24/97 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A flash memory card and methods of manufacturing same are disclosed. The card includes a semiconductor package fabricated to receive a single-sided or double-sided lid. A surface of the semiconductor package may be formed with holes, trenches and/or pockmarks. After the holes, trenches and/or pockmarks are formed, a lid may be attached to the package surface in an injection molding process. During the injection molding process, the molten plastic flows into the holes, trenches and/or pockmarks to interconnect with the surface of the semiconductor package. Thus, when the molten plastic hardens, the holes, trenches and/or pockmarks ensure that the lid remains firmly attached to semiconductor package.

摘要翻译： 公开了一种闪存卡及其制造方法。 卡包括制造成接收单面或双面盖的半导体封装。 半导体封装的表面可以形成有孔，沟槽和/或戳记。 在形成孔，沟和/或标记之后，可以在注射成型工艺中将盖子附接到包装表面。 在注射成型过程中，熔融的塑料流入与半导体封装的表面互连的孔，沟槽和/或戳痕。 因此，当熔融塑料硬化时，孔，沟槽和/或戳痕确保盖保持牢固地附接到半导体封装。

公开(公告)号：US20100055847A1

公开(公告)日：2010-03-04

申请号：US12614960

申请日：2009-11-09

申请人： Che-Jung Chang ,  Chin-Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Jack Chang Chien ,  Ning Liu

发明人： Che-Jung Chang ,  Chin-Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Jack Chang Chien ,  Ning Liu

IPC分类号： H01L21/56

CPC分类号： G06K19/077 ,  B29C45/14311 ,  B29C45/14647 ,  B29C2045/14327 ,  G06K19/07724 ,  G06K19/07732 ,  H01L23/10 ,  H01L23/544 ,  H01L24/48 ,  H01L24/97 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A flash memory card and methods of manufacturing same are disclosed. The card includes a semiconductor package fabricated to receive a single-sided or double-sided lid. A surface of the semiconductor package may be formed with holes, trenches and/or pockmarks. After the holes, trenches and/or pockmarks are formed, a lid may be attached to the package surface in an injection molding process. During the injection molding process, the molten plastic flows into the holes, trenches and/or pockmarks to interconnect with the surface of the semiconductor package. Thus, when the molten plastic hardens, the holes, trenches and/or pockmarks ensure that the lid remains firmly attached to semiconductor package.

公开(公告)号：US08232145B2

公开(公告)日：2012-07-31

申请号：US12614960

申请日：2009-11-09

申请人： Che-Jung Chang ,  Chin-Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Jack Chang Chien ,  Ning Liu

发明人： Che-Jung Chang ,  Chin-Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Jack Chang Chien ,  Ning Liu

IPC分类号： H01L21/00

CPC分类号： G06K19/077 ,  B29C45/14311 ,  B29C45/14647 ,  B29C2045/14327 ,  G06K19/07724 ,  G06K19/07732 ,  H01L23/10 ,  H01L23/544 ,  H01L24/48 ,  H01L24/97 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A flash memory card and methods of manufacturing same are disclosed. The card includes a semiconductor package fabricated to receive a single-sided or double-sided lid. A surface of the semiconductor package may be formed with holes, trenches and/or pockmarks. After the holes, trenches and/or pockmarks are formed, a lid may be attached to the package surface in an injection molding process. During the injection molding process, the molten plastic flows into the holes, trenches and/or pockmarks to interconnect with the surface of the semiconductor package. Thus, when the molten plastic hardens, the holes, trenches and/or pockmarks ensure that the lid remains firmly attached to semiconductor package.

摘要翻译： 公开了一种闪存卡及其制造方法。 卡包括制造成接收单面或双面盖的半导体封装。 半导体封装的表面可以形成有孔，沟槽和/或戳记。 在形成孔，沟和/或标记之后，可以在注射成型工艺中将盖子附接到包装表面。 在注射成型过程中，熔融的塑料流入与半导体封装的表面互连的孔，沟槽和/或戳痕。 因此，当熔融塑料硬化时，孔，沟槽和/或戳痕确保盖保持牢固地附接到半导体封装。

公开(公告)号：US08482139B2

公开(公告)日：2013-07-09

申请号：US12614945

申请日：2009-11-09

申请人： Che-Jung Chang ,  Chin-Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Jack Chang Chien ,  Ning Liu

发明人： Che-Jung Chang ,  Chin-Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Jack Chang Chien ,  Ning Liu

IPC分类号： H01L23/29

CPC分类号： G06K19/077 ,  B29C45/14311 ,  B29C45/14647 ,  B29C2045/14327 ,  G06K19/07724 ,  G06K19/07732 ,  H01L23/10 ,  H01L23/544 ,  H01L24/48 ,  H01L24/97 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A flash memory card and methods of manufacturing same are disclosed. The card includes a semiconductor package fabricated to receive a single-sided or double-sided lid. A surface of the semiconductor package may be formed with holes, trenches and/or pockmarks. After the holes, trenches and/or pockmarks are formed, a lid may be attached to the package surface in an injection molding process. During the injection molding process, the molten plastic flows into the holes, trenches and/or pockmarks to interconnect with the surface of the semiconductor package. Thus, when the molten plastic hardens, the holes, trenches and/or pockmarks ensure that the lid remains firmly attached to semiconductor package.

公开(公告)号：US07615861B2

公开(公告)日：2009-11-10

申请号：US11373941

申请日：2006-03-13

申请人： Che-Jung Chang ,  Chin-Tien Chiu ,  Cheemen Yu ,  Hem Takiar ,  Jack Chang Chien ,  Ning Liu

发明人： Che-Jung Chang ,  Chin-Tien Chiu ,  Cheemen Yu ,  Hem Takiar ,  Jack Chang Chien ,  Ning Liu

IPC分类号： H01L23/12

CPC分类号： G06K19/077 ,  B29C45/14311 ,  B29C45/14647 ,  B29C2045/14327 ,  G06K19/07724 ,  G06K19/07732 ,  H01L23/10 ,  H01L23/544 ,  H01L24/48 ,  H01L24/97 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A flash memory card and methods of manufacturing same are disclosed. The card includes a semiconductor package fabricated to receive a single-sided or double-sided lid. A surface of the semiconductor package may be formed with holes, trenches and/or pockmarks. After the holes, trenches and/or pockmarks are formed, a lid may be attached to the package surface in an injection molding process. During the injection molding process, the molten plastic flows into the holes, trenches and/or pockmarks to interconnect with the surface of the semiconductor package. Thus, when the molten plastic hardens, the holes, trenches and/or pockmarks ensure that the lid remains firmly attached to semiconductor package.

摘要翻译： 公开了一种闪存卡及其制造方法。 卡包括制造成接收单面或双面盖的半导体封装。 半导体封装的表面可以形成有孔，沟槽和/或戳记。 在形成孔，沟和/或标记之后，可以在注射成型工艺中将盖子附接到包装表面。 在注射成型过程中，熔融的塑料流入与半导体封装的表面互连的孔，沟槽和/或戳痕。 因此，当熔融塑料硬化时，孔，沟槽和/或戳痕确保盖保持牢固地附接到半导体封装。

公开(公告)号：US07939944B2

公开(公告)日：2011-05-10

申请号：US12843279

申请日：2010-07-26

申请人： Chien-Ko Liao ,  Chin-Tien Chiu ,  Jack Chang Chien ,  Cheeman Yu ,  Hem Takiar

发明人： Chien-Ko Liao ,  Chin-Tien Chiu ,  Jack Chang Chien ,  Cheeman Yu ,  Hem Takiar

IPC分类号： H01L23/48

CPC分类号： H01L23/49833 ,  H01L23/525 ,  H01L24/48 ,  H01L24/97 ,  H01L25/18 ,  H01L2224/05554 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01078 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1438 ,  H01L2924/1531 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/00 ,  H01L2224/85 ,  H01L2224/03 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device having a redistribution layer, and methods of forming same, are disclosed. After fabrication of semiconductor die on a wafer, a tape assembly is applied onto a surface of the wafer, in contact with the surfaces of each semiconductor die on the wafer. The tape assembly includes a backgrind tape as a base layer, and a film assembly adhered to the backgrind tape. The film assembly in turn includes an adhesive film on which is deposited a thin layer of conductive material. The redistribution layer pattern is traced into the tape assembly, using for example a laser. Thereafter, the unheated portions of the tape assembly may be removed, leaving the heated redistribution layer pattern on each semiconductor die.

摘要翻译： 公开了具有再分配层的半导体器件及其形成方法。 在晶片上制造半导体管芯之后，将带组件施加到与晶片上的每个半导体管芯的表面接触的晶片表面上。 带组件包括作为基底层的后研磨带，以及粘附到后研磨带的胶片组件。 膜组件又包括粘附膜，其上沉积有导电材料的薄层。 使用例如激光器将再分布层图案追踪到带组件中。 此后，可以去除带组件的未加热部分，在每个半导体管芯上留下加热的再分布层图案。

公开(公告)号：US07967184B2

公开(公告)日：2011-06-28

申请号：US11280419

申请日：2005-11-16

申请人： Chih-Chin Liao ,  Ken Jian Ming Wang ,  Han-Shiao Chen ,  Chin-Tien Chiu ,  Jack Chang Chien ,  Shrikar Bhagath ,  Cheemen Yu ,  Hem Takiar

发明人： Chih-Chin Liao ,  Ken Jian Ming Wang ,  Han-Shiao Chen ,  Chin-Tien Chiu ,  Jack Chang Chien ,  Shrikar Bhagath ,  Cheemen Yu ,  Hem Takiar

IPC分类号： B23K31/02

CPC分类号： H05K1/111 ,  H01L2224/48091 ,  H01L2224/48227 ,  H05K3/3421 ,  H05K3/3442 ,  H05K3/3452 ,  H05K2201/09427 ,  H05K2201/09663 ,  H05K2201/0989 ,  H05K2201/099 ,  H05K2201/10636 ,  H05K2201/10689 ,  H05K2201/10727 ,  Y02P70/611 ,  Y02P70/613 ,  H01L2924/00014

摘要： A semiconductor package having a low profile is disclosed. In embodiments, a surface mounted component may be mounted directly to the core of the semiconductor package substrate, so that there is no conductive layer, plating layers or solder paste between the component and the substrate core. The surface mounted component may be any type of component which may be surface mounted on a substrate according to an SMT process, including for example passive components and various packaged semiconductors.

摘要翻译： 公开了一种具有低轮廓的半导体封装。 在实施例中，表面安装部件可以直接安装到半导体封装基板的芯部，使得在部件和基板芯之间不存在导电层，镀层或焊膏。 表面安装部件可以是根据SMT工艺可以表面安装在基板上的任何类型的部件，包括例如无源部件和各种封装半导体。

公开(公告)号：US07763980B2

公开(公告)日：2010-07-27

申请号：US11769937

申请日：2007-06-28

申请人： Chien-Ko Liao ,  Chin-Tien Chiu ,  Jack Chang Chien ,  Cheemen Yu ,  Hem Takiar

发明人： Chien-Ko Liao ,  Chin-Tien Chiu ,  Jack Chang Chien ,  Cheemen Yu ,  Hem Takiar

IPC分类号： H01L23/48

CPC分类号： H01L23/49833 ,  H01L23/525 ,  H01L24/48 ,  H01L24/97 ,  H01L25/18 ,  H01L2224/05554 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01078 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1438 ,  H01L2924/1531 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/00 ,  H01L2224/85 ,  H01L2224/03 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device having a redistribution layer, and methods of forming same, are disclosed. After fabrication of semiconductor die on a wafer, a tape assembly is applied onto a surface of the wafer, in contact with the surfaces of each semiconductor die on the wafer. The tape assembly includes a backgrind tape as a base layer, and a film assembly adhered to the backgrind tape. The film assembly in turn includes an adhesive film on which is deposited a thin layer of conductive material. The redistribution layer pattern is traced into the tape assembly, using for example a laser. Thereafter, the unheated portions of the tape assembly may be removed, leaving the heated redistribution layer pattern on each semiconductor die.

摘要翻译： 公开了具有再分配层的半导体器件及其形成方法。 在晶片上制造半导体管芯之后，将带组件施加到与晶片上的每个半导体管芯的表面接触的晶片表面上。 带组件包括作为基底层的后研磨带，以及粘附到后研磨带的胶片组件。 膜组件又包括粘附膜，其上沉积有导电材料的薄层。 使用例如激光器将再分布层图案追踪到带组件中。 此后，可以去除带组件的未加热部分，在每个半导体管芯上留下加热的再分配层图案。

公开(公告)号：US20090004785A1

公开(公告)日：2009-01-01

申请号：US11770078

申请日：2007-06-28

申请人： Chin-Tien Chiu ,  Hem Takiar ,  Chih-Chin Liao ,  Cheemen Yu ,  Ning Ye ,  Jack Chang Chien

发明人： Chin-Tien Chiu ,  Hem Takiar ,  Chih-Chin Liao ,  Cheemen Yu ,  Ning Ye ,  Jack Chang Chien

IPC分类号： H01L21/56

CPC分类号： H01L21/56 ,  G06K19/077 ,  H01L23/3121 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A portable memory card and methods of manufacturing same are disclosed. The portable memory includes a substrate having a plurality of holes formed therein. During the encapsulation process, mold compound flows over the top surface of the substrate, through the holes, and down into a recessed section formed in the bottom mold cap plate to form a projection of mold compound on the bottom surface of the substrate.

摘要翻译： 公开了便携式存储卡及其制造方法。 便携式存储器包括其中形成有多个孔的基板。 在封装过程中，模塑料在衬底的顶表面上通过孔流动，并向下流入形成在底模盖板中的凹陷部分，以在基底的底表面上形成模具化合物的突起。

公开(公告)号：US20090004781A1

公开(公告)日：2009-01-01

申请号：US11769927

申请日：2007-06-28

申请人： Chien-Ko Liao ,  Chin-Tien Chiu ,  Jack Chang Chien ,  Cheemen Yu ,  Hem Takiar

发明人： Chien-Ko Liao ,  Chin-Tien Chiu ,  Jack Chang Chien ,  Cheemen Yu ,  Hem Takiar

IPC分类号： H01L21/60

CPC分类号： H01L21/6835 ,  H01L23/525 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2221/6834 ,  H01L2224/05554 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83856 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1438 ,  H01L2924/1531 ,  H01L2924/181 ,  H01L2924/19105 ,  Y10T29/49142 ,  Y10T29/49144 ,  Y10T29/49211 ,  Y10T29/49213 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/32225 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device having a redistribution layer, and methods of forming same, are disclosed. After fabrication of semiconductor die on a wafer, a tape assembly is applied onto a surface of the wafer, in contact with the surfaces of each semiconductor die on the wafer. The tape assembly includes a backgrind tape as a base layer, and a film assembly adhered to the backgrind tape. The film assembly in turn includes an adhesive film on which is deposited a thin layer of conductive material. The redistribution layer pattern is traced into the tape assembly, using for example a laser. Thereafter, the unheated portions of the tape assembly may be removed, leaving the heated redistribution layer pattern on each semiconductor die.

摘要翻译： 公开了具有再分配层的半导体器件及其形成方法。 在晶片上制造半导体管芯之后，将带组件施加到与晶片上的每个半导体管芯的表面接触的晶片表面上。 带组件包括作为基底层的后研磨带，以及粘附到后研磨带的胶片组件。 膜组件又包括粘附膜，其上沉积有导电材料的薄层。 使用例如激光器将再分布层图案追踪到带组件中。 此后，可以去除带组件的未加热部分，在每个半导体管芯上留下加热的再分配层图案。