公开(公告)号：US06183916B2

公开(公告)日：2001-02-06

申请号：US09395283

申请日：1999-09-13

申请人： Chen-Cheng Kuo ,  Hua-Tai Lin ,  Chia-Hui Lin

发明人： Chen-Cheng Kuo ,  Hua-Tai Lin ,  Chia-Hui Lin

IPC分类号： G03F900

CPC分类号： G03F1/30 ,  G03F1/36

摘要： A method of forming an alternative phase shifting mask and forming a circuit pattern on a wafer using the mask are described. Optical proximity correction is added to a data file, in which a description of a circuit pattern has been stored, to obtain a first modified data file. The first modified data file is then separated into a second modified data file, for regions of the mask having dense line/space patterns, and a third modified data file, for regions of the mask having isolated line space patterns. Critical dimension bias is then added to the second modified data file forming a fourth modified data file. The third modified data file and the fourth modified data file are then merged into a single fifth modified data file. The fifth modified data file is then is then converted to an alternative phase shift data file. An alternative phase shift mask is then formed from the alternative phase shift data file. The alternative phase shift mask has then been corrected for optical proximity effect and critical dimension bias has been added. This alternative phase shift mask can then be used in forming the circuit pattern on an integrated circuit wafer.

摘要翻译： 描述了使用掩模形成替代的相移掩模并在晶片上形成电路图案的方法。 光学邻近校正被添加到已经存储电路图案的描述的数据文件中，以获得第一修改的数据文件。 然后，对于具有密集线/空间图案的掩模区域和第三修改数据文件，第一修改数据文件被分成第二修改数据文件，对于具有隔离行空间图案的掩码区域，第二修改数据文件被分隔成第二修改数据文件。 然后将关键尺寸偏差添加到形成第四修改数据文件的第二修改数据文件中。 然后将第三修改数据文件和第四修改数据文件合并到单个第五修改数据文件中。 然后将第五修改的数据文件转换成替代的相移数据文件。 然后从替代相移数据文件形成替代的相移掩模。 然后对于光学邻近效应校正了替代相移掩模，并且添加了临界尺寸偏差。 然后可以将该替代的相移掩模用于形成集成电路晶片上的电路图案。

公开(公告)号：US20060113616A1

公开(公告)日：2006-06-01

申请号：US11206613

申请日：2005-08-18

申请人： Ai-Sen Liu ,  Baw-Ching Perng ,  Ming-Ta Lei ,  Yih-Shung Lin ,  Cheng-Chung Lin ,  Chia-Hui Lin

发明人： Ai-Sen Liu ,  Baw-Ching Perng ,  Ming-Ta Lei ,  Yih-Shung Lin ,  Cheng-Chung Lin ,  Chia-Hui Lin

IPC分类号： H01L29/94

CPC分类号： H01L21/823468 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/823456 ,  H01L29/6656

摘要： A method of forming spacers with different widths on a semiconductor substrate, includes the steps of disposing a first spacer layer over the substrate, defining the first spacer layer into a plurality of spacers of a first width, and disposing a second spacer layer selectively over the first spacer layer of a number of the spacers preselected for the second spacer layer, the predetermined number of the spacers with the second spacer layer each having a second width which is different from the first width.

摘要翻译： 一种在半导体衬底上形成具有不同宽度的间隔物的方法，包括以下步骤：在衬底上设置第一间隔层，将第一间隔层限定为多个第一宽度的间隔物，并且在第 为第二间隔层预选的多个间隔物的第一间隔层，具有第二间隔层的预定数量的间隔物各自具有与第一宽度不同的第二宽度。

公开(公告)号：US07011929B2

公开(公告)日：2006-03-14

申请号：US10340245

申请日：2003-01-09

申请人： Ming-Ta Lei ,  Yih-Shung Lin ,  Ai-Sen Liu ,  Cheng-Chung Lin ,  Baw-Ching Perng ,  Chia-Hui Lin

发明人： Ming-Ta Lei ,  Yih-Shung Lin ,  Ai-Sen Liu ,  Cheng-Chung Lin ,  Baw-Ching Perng ,  Chia-Hui Lin

IPC分类号： H01L21/302

CPC分类号： H01L21/823468

摘要： A method of forming pluralities of gate sidewall spacers each plurality comprising different associated gate sidewall spacer widths including providing a plurality of gate structures formed overlying a substrate and a plurality of dielectric layers formed substantially conformally overlying the gate structures; exposing a first selected portion of the plurality followed by anisotropically etching through a thickness portion comprising at least the uppermost dielectric layer to form a first sidewall spacer width; exposing a first subsequent selected portion of the plurality followed by etching through at least a thickness portion of the uppermost dielectric layer; and, exposing a second subsequent selected portion of the plurality followed by anisotropically etching through at least a thickness portion of the uppermost dielectric layer to form a subsequent sidewall spacer width.

摘要翻译： 一种形成多个栅极侧壁间隔物的方法，每个栅极侧壁间隔件包括不同的相关栅极侧壁间隔物宽度，包括提供形成在衬底上的多个栅极结构和基本上共形地覆盖栅极结构的多个电介质层; 暴露多个的第一选定部分，然后通过各向异性蚀刻穿过包括至少最上面的介电层的厚度部分以形成第一侧壁间隔物宽度; 暴露多个的第一后续选定部分，然后蚀刻通过至少最上层介电层的厚度部分; 并且暴露多个随后的第二部分，然后通过各向异性蚀刻穿过至少最上面的介电层的厚度部分以形成随后的侧壁间隔物宽度。

公开(公告)号：US06982135B2

公开(公告)日：2006-01-03

申请号：US10402590

申请日：2003-03-28

申请人： Chung-Hsing Chang ,  Chien-Hung Lin ,  Burn J. Lin ,  Chia-Hui Lin ,  Chih-Cheng Chin ,  Chin-Hsiang Lin ,  Fu-Jye Liang ,  Jeng-Horng Chen ,  Bang-Ching Ho

发明人： Chung-Hsing Chang ,  Chien-Hung Lin ,  Burn J. Lin ,  Chia-Hui Lin ,  Chih-Cheng Chin ,  Chin-Hsiang Lin ,  Fu-Jye Liang ,  Jeng-Horng Chen ,  Bang-Ching Ho

IPC分类号： G03F9/00 ,  G03F7/20

CPC分类号： G03F1/20 ,  G03B27/42 ,  G03F1/00 ,  G03F7/70475

摘要： A method for transferring a pattern from a mask to a substrate (or wafer), comprises dividing a mask generation data file into a plurality of segments. The segments include a main pattern area and a stitching area. Each stitching area contains a respective common pattern. An image of an illuminated portion of the main pattern area is formed. Connection ends of the segments in a substrate area (or wafer area) are illuminated with an illumination beam. An image of the illuminated portion of the main pattern area is formed, and a halftone gray level dosage distribution is produced in the substrate area (or wafer area) corresponding to the common pattern. The common patterns of adjacent segments substantially overlap in the substrate area (or wafer area).

摘要翻译： 将图案从掩模转印到基板（或晶片）的方法包括将掩模生成数据文件分割成多个段。 片段包括主图案区域和缝合区域。 每个缝合区域包含各自的共同图案。 形成主图案区域的照明部分的图像。 衬底区域（或晶片区域）中的段的连接端用照明光束照射。 形成主图案区域的照明部分的图像，并且在对应于共同图案的基板区域（或晶片区域）中产生半色调灰度级剂量分布。 相邻段的共同图案在衬底区域（或晶片区域）中基本上重叠。

公开(公告)号：US6051347A

公开(公告)日：2000-04-18

申请号：US270595

申请日：1999-03-18

申请人： San-De Tzu ,  Chia-Hui Lin

发明人： San-De Tzu ,  Chia-Hui Lin

IPC分类号： G03F7/20 ,  G03C5/00

CPC分类号： G03F7/70441 ,  Y10S430/143

摘要： A method of correcting, or compensating for errors encountered in the transfer of patterns is disclosed for use with high resolution e-beam lithography. In a first embodiment, optical proximity effects are incorporated into the e-beam proximity effects by superimposing the two effects to arrive at a compensated dosage level database to produce the desired patterns. In a second embodiment, etching effects are also superimposed on the previous driving database by compensating the e-beam proximity data twice, that is, by over correcting it, to further improve the transfer of patterns without the undesirable effects. It is shown that corrections for a number of other process steps can also be incorporated into the database that drives the e-beam lithography machine in order to achieve high resolution patterns of about one-quarter-micron technology.

摘要翻译： 公开了一种校正或补偿在图案传送中遇到的错误的方法，用于高分辨率电子束光刻。 在第一实施例中，通过叠加两个效应来将光学邻近效应并入到电子束邻近效应中，以得到补偿剂量水平数据库以产生期望的图案。 在第二实施例中，通过补偿电子束邻近数据两次，即通过对其进行过度校正，也可以对先前的驱动数据库叠加蚀刻效果，以进一步改善图案的传送而不产生不良影响。 显示出许多其他工艺步骤的校正也可以并入驱动电子束光刻机的数据库中，以实现约四分之一微米技术的高分辨率图案。

公开(公告)号：US07176137B2

公开(公告)日：2007-02-13

申请号：US10435009

申请日：2003-05-09

申请人： Baw-Ching Perng ,  Yih-Shung Lin ,  Ming-Ta Lei ,  Ai-Sen Liu ,  Chia-Hui Lin ,  Cheng-Chung Lin

发明人： Baw-Ching Perng ,  Yih-Shung Lin ,  Ming-Ta Lei ,  Ai-Sen Liu ,  Chia-Hui Lin ,  Cheng-Chung Lin

IPC分类号： H01L21/302

CPC分类号： H01L29/6656 ,  H01L21/823468

摘要： A method of forming pluralities of gate sidewall spacers each plurality comprising different associated gate sidewall spacer widths including providing a first plurality of gate structures; blanket depositing a first dielectric layer over the first plurality of gate structures; blanket depositing a second dielectric layer over the first dielectric layer; etching back through a thickness of the first and second dielectric layers; blanket depositing a first photoresist layer to cover the first plurality and patterning to selectively expose at least a second plurality of gate structures; isotropically etching the at least a second plurality of gate structures for a predetermined time period to selectively etch away a predetermined portion of the first dielectric layer; and, selectively etching away the second dielectric layer to leave gate structures comprising a plurality of associated sidewall spacer widths.

摘要翻译： 形成多个栅极侧壁间隔物的方法，每个栅极侧壁间隔件包括不同的相关栅极侧壁间隔物宽度，包括提供第一多个栅极结构; 在第一多个栅极结构上覆盖沉积第一介电层; 在第一介电层上铺设第二介电层; 通过第一和第二介电层的厚度回蚀; 覆盖沉积第一光致抗蚀剂层以覆盖第一多个并且图案化以选择性地暴露至少第二多个栅极结构; 对所述至少第二多个栅极结构进行各向同性蚀刻预定的时间段以选择性地蚀刻掉所述第一介电层的预定部分; 并且选择性地蚀刻掉第二介电层以留下包括多个相关联的侧壁间隔物宽度的栅极结构。

公开(公告)号：US06875655B2

公开(公告)日：2005-04-05

申请号：US10802564

申请日：2004-03-17

申请人： Chun-Chieh Lin ,  Lan-Lin Chao ,  Chia-Hui Lin ,  Fu-Liang Yang ,  Chia-Shiung Tsai ,  Chanming Hu

发明人： Chun-Chieh Lin ,  Lan-Lin Chao ,  Chia-Hui Lin ,  Fu-Liang Yang ,  Chia-Shiung Tsai ,  Chanming Hu

IPC分类号： H01L21/02 ,  H01L21/336 ,  H01L21/8242 ,  H01L27/02 ,  H01L27/108

CPC分类号： H01L27/10852 ,  H01L27/0207 ,  H01L27/10817 ,  H01L28/91

摘要： A method for fabricating a high-density array of crown capacitors with increased capacitance while reducing process damage to the bottom electrodes is achieved. The process is particularly useful for crown capacitors for future DRAM circuits with minimum feature sizes of 0.18 micrometer or less. A conformal conducting layer is deposited over trenches in an interlevel dielectric (ILD) layer, and is polished back to form capacitor bottom electrodes. A novel photoresist mask and etching are then used to pattern the ILD layer to provide a protective interlevel dielectric structure between capacitors. The protective structures prevent damage to the bottom electrodes during subsequent processing. The etching also exposes portions of the outer surface of bottom electrodes for increased capacitance (>50%). In a first embodiment the ILD structure is formed between pairs of adjacent bottom electrodes, and in a second embodiment the ILD structure is formed between four adjacent bottom electrodes.

摘要翻译： 实现了一种用于制造具有增加的电容的高密度阵列的冠状电容器的方法，同时减少了对底部电极的工艺损伤。 该过程对于具有最小特征尺寸为0.18微米或更小的未来DRAM电路的冠电容器特别有用。 在层间电介质（ILD）层中的沟槽上沉积共形导电层，并将其抛光回形成电容器底部电极。 然后使用新颖的光致抗蚀剂掩模和蚀刻来对ILD层进行图案以在电容器之间提供保护性层间电介质结构。 保护结构可防止在后续处理期间损坏底部电极。 蚀刻还暴露了底部电极的外表面的部分以增加电容（> 50％）。 在第一实施例中，ILD结构形成在成对的相邻底部电极之间，并且在第二实施例中，ILD结构形成在四个相邻的底部电极之间。

公开(公告)号：US20050004806A1

公开(公告)日：2005-01-06

申请号：US10601164

申请日：2003-06-20

申请人： Dah-Chih Lin ,  Jeffrey Liou ,  Joseph Du ,  Chia-Hui Lin ,  Shih-Wen Tu ,  Hsien_Ying Tseng ,  Chun Chen ,  Yueh-Ching Lee

发明人： Dah-Chih Lin ,  Jeffrey Liou ,  Joseph Du ,  Chia-Hui Lin ,  Shih-Wen Tu ,  Hsien_Ying Tseng ,  Chun Chen ,  Yueh-Ching Lee

IPC分类号： G06F17/27 ,  G06Q10/00 ,  G06F17/60

CPC分类号： G06F17/2785 ,  G06F17/2775 ,  G06Q10/10 ,  G06Q50/184

摘要： A method of analyzing a claim in a patent or patent application is disclosed, comprising retrieving a patent claim which has been rendered into a format parsable by a computer program into a computer memory; parsing the claim into a set of discrete elements; categorizing each element in the set of elements according to a predetermined rule; and storing a set of categorized elements in a data store. A parsing program executable in a computer may be used to parse the patent claim and, optionally, to identify one or more keyword sets in the parsed claim. A rating program may also be used to assign a rating weight to each categorized element. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

摘要翻译： 公开了一种分析专利或专利申请中的权利要求的方法，包括将已经呈现为可由计算机程序解析的格式的专利权利要求检索到计算机存储器中; 将声明解析成一组离散元素; 根据预定规则对元素集合中的每个元素进行分类; 并将一组分类元素存储在数据存储中。 可以使用计算机中可执行的解析程序来解析专利权利要求，并且可选地，用于识别解析的权利要求中的一个或多个关键字集合。 评级程序也可用于为每个分类元素分配评级权重。 要强调的是，该摘要被提供以符合要求摘要的规则，这将允许搜索者或其他读者快速确定技术公开的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

公开(公告)号：US06746900B1

公开(公告)日：2004-06-08

申请号：US10369992

申请日：2003-02-19

申请人： Ai-Sen Liu ,  Baw-Ching Perng ,  Ming-Ta Lei ,  Wen-Kai Wan ,  Cheng-Chung Lin ,  Kuei-Wu Huang ,  Yih-Shung Lin ,  Chia-Hui Lin

发明人： Ai-Sen Liu ,  Baw-Ching Perng ,  Ming-Ta Lei ,  Wen-Kai Wan ,  Cheng-Chung Lin ,  Kuei-Wu Huang ,  Yih-Shung Lin ,  Chia-Hui Lin

IPC分类号： H01L21335

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L29/517 ,  H01L29/66583

摘要： In a method of forming an integrated circuit, a sacrificial layer is formed over a substrate. The sacrificial layer has a gate trench formed therein and a first layer of a first material formed over the substrate in the gate trench. A second layer of a second material is formed over the first layer in the gate trench. The first and second layers are processed to form a layer of a high-K dielectric material.

摘要翻译： 在形成集成电路的方法中，在衬底上形成牺牲层。 牺牲层具有形成在其中的栅极沟槽和形成在栅极沟槽中的衬底上的第一材料的第一层。 第二材料的第二层形成在栅极沟槽中的第一层上。 处理第一层和第二层以形成高K电介质材料层。

公开(公告)号：US06586142B1

公开(公告)日：2003-07-01

申请号：US09408702

申请日：1999-09-30

申请人： Chia-Hui Lin ,  Chun Ming Wang

发明人： Chia-Hui Lin ,  Chun Ming Wang

IPC分类号： G03F900

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/2022 ,  G03F7/70466

摘要： A process to correct distortions due to optical proximity effects is described. A two reticle per pattern approach is used. The first, or primary, reticle contains the image that is to be transferred to the photoresist. It is used to expose the resist in the usual way to the correct dosage of light needed to optimally activate it. For a primary reticle bearing a line pattern, the second, or correction, reticle bears a pattern of rectangles which are located and dimensioned so that, when aligned relative to the primary reticle, they overlap all line ends in the pattern. The amount by which the rectangles overlap the lines is similar to the amount by which serifs (if they had been used) would overlap. The amount by which the rectangles extend outside the line ends is not critical (provided it is at least as large as the inside overlap amount). This property allows a single rectangle to be shared by many line ends. After the first exposure, the correction reticle is substituted for the primary reticle and, after alignment, a second, much shorter, exposure is given. The resist is then developed in the normal way, resulting in a patterned etch mask that is largely free of distortion. A similar approach applies to hole patterns except that a positive resist must be used.

摘要翻译： 描述了由于光学邻近效应而校正失真的过程。 使用两个分划板每个图案方法。 第一或主要的掩模版包含要转移到光致抗蚀剂的图像。 它用于以通常的方式将抗蚀剂暴露于最佳激活所需的正确剂量的光。 对于具有线图案的主要掩模版，第二或修正的掩模版具有定位和尺寸的矩形图案，使得当相对于主掩模版对准时，它们与图案中的所有线端重叠。 矩形与线重叠的量与衬线（如果已被使用）重叠的量相似。 矩形在线端部外延伸的量不是关键的（只要它至少与内部重叠量一样大）。 此属性允许单个矩形由许多行末端共享。 在第一次曝光之后，校正掩模版代替初级掩模版，并且在对准之后，给出第二次短得多的曝光。 然后以正常方式显影抗蚀剂，得到大部分没有变形的图案化蚀刻掩模。 类似的方法适用于孔图案，除了必须使用正性抗蚀剂。