公开(公告)号：US07449345B2

公开(公告)日：2008-11-11

申请号：US10868715

申请日：2004-06-15

申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Liubo Hong ,  Min Li

发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Liubo Hong ,  Min Li

IPC分类号： G11B5/72 ,  H01L41/06

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/10 ,  H01L43/12

摘要： An MTJ in an MRAM array or in a TMR read head is comprised of a capping layer with a lower inter-diffusion barrier layer, an intermediate oxygen gettering layer, and an upper metal layer that contacts a top conductor. The composite capping layer is especially useful with a moderate spin polarization free layer such as a NiFe layer with a Fe content of about 17.5 to 20 atomic %. The capping layer preferably has a Ru/Ta/Ru configuration in which the lower Ru layer is about 10 to 30 Angstroms thick and the Ta layer is about 30 Angstroms thick. As a result, a high dR/R of about 40% is achieved with low magnetostriction less than about 1.0 E−6 in an MTJ in an MRAM array. Best results are obtained with an AlOx tunnel barrier layer formed by an in-situ ROX process on an 8 to 10 Angstrom thick Al layer.

摘要翻译： MRAM阵列或TMR读取头中的MTJ由具有较低的互扩散阻挡层的覆盖层，中间氧吸气层和接触顶部导体的上部金属层组成。 复合覆盖层特别适用于中等自旋极化自由层，例如Fe含量约为17.5至20原子％的NiFe层。 封端层优选具有Ru / Ta / Ru构型，其中下Ru层的厚度约为10至30埃，Ta层约为30埃厚。 结果，在MRAM阵列的MTJ中，具有约40％的高dR / R达到小于约1.0E-6的低磁致伸缩。 通过在8至10埃厚的Al层上通过原位ROX工艺形成的AlOx隧道势垒层获得最佳结果。

公开(公告)号：US07211447B2

公开(公告)日：2007-05-01

申请号：US11080868

申请日：2005-03-15

申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

IPC分类号： H01L21/00

CPC分类号： H01L43/12

摘要： A method of forming a high performance MTJ in an MRAM array is disclosed. A Ta/Ru capping layer in a bottom conductor is sputter etched to remove the Ru layer and form an amorphous Ta capping layer. A key feature is a subsequent surface treatment of the Ta capping layer in a transient vacuum chamber where a self-annealing occurs and a surfactant layer is formed on the Ta surface. The resulting smooth and flat Ta surface promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2.

摘要翻译： 公开了一种在MRAM阵列中形成高性能MTJ的方法。 溅射蚀刻底部导体中的Ta / Ru覆盖层以去除Ru层并形成无定形Ta覆盖层。 一个关键的特征是在瞬态真空室中Ta覆盖层的后续表面处理，其中发生自退火并且在Ta表面上形成表面活性剂层。 所得到的平滑且平坦的Ta表面促进在表面活性剂层上随后形成的MTJ层中的光滑和平坦的表面。 对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层来产生大于40％的dR / R和约4000欧姆 - 姆2的RA。

公开(公告)号：US07208807B2

公开(公告)日：2007-04-24

申请号：US11080860

申请日：2005-03-15

申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

IPC分类号： H01L29/82 ,  H01L43/00

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  H01L43/12

摘要： A high performance MTJ in an MRAM array is disclosed in which the bottom conductor has an amorphous Ta capping layer. A key feature is a surfactant layer comprised of oxygen that is formed on the Ta surface. The resulting smooth and flat Ta capping layer promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2. The MTJ configuraton is extendable to a 0.2×0.4 micron MTJ bit size.

摘要翻译： 公开了一种MRAM阵列中的高性能MTJ，其中底部导体具有无定形Ta覆盖层。 关键特征是由在Ta表面上形成的氧构成的表面活性剂层。 得到的平滑且平坦的Ta覆盖层促进MTJ层中平滑且平坦的表面，随后在表面活性剂层上形成。 对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层来产生大于40％的dR / R和约4000欧姆 - 姆2的RA。 MTJ配置可扩展到0.2x0.4微米的MTJ位大小。

公开(公告)号：US07323215B2

公开(公告)日：2008-01-29

申请号：US10845888

申请日：2004-05-14

申请人： Min Li ,  Cheng T. Horng ,  Ru-Ying Tong

发明人： Min Li ,  Cheng T. Horng ,  Ru-Ying Tong

IPC分类号： B05D5/12

CPC分类号： G11B5/39 ,  Y10T428/1129 ,  Y10T428/12931

摘要： By using a composite free layer of Fe25% Co/NiFe, an improved CPP GMR device has been created. The resulting structure yields a higher CPP GMR ratio than prior art devices, while maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.

摘要翻译： 通过使用Fe25％Co / NiFe的复合自由层，已经创建了改进的CPP GMR器件。 所得到的结构产生比现有技术的装置更高的CPP GMR比，同时保持自由层柔软性和可接受的磁致伸缩。 还描述了用于制造该装置的方法。

公开(公告)号：US06857180B2

公开(公告)日：2005-02-22

申请号：US10104802

申请日：2002-03-22

申请人： Cheng T. Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Feng Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Chyi Han

发明人： Cheng T. Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Feng Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Chyi Han

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  G11B5/127 ,  H04R31/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.

摘要翻译： 提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。 交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。 在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

公开(公告)号：US06620530B1

公开(公告)日：2003-09-16

申请号：US09769813

申请日：2001-01-26

申请人： Min Li ,  Cheng T. Horng ,  Ru Ying Tong ,  Simon H. Liao ,  Kochan Ju

发明人： Min Li ,  Cheng T. Horng ,  Ru Ying Tong ,  Simon H. Liao ,  Kochan Ju

IPC分类号： G11B560

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/3163 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/302 ,  Y10S428/90 ,  Y10T428/11 ,  Y10T428/1121

摘要： A spin valve structure and a method for manufacturing it are described. The spin valve uses a modified pinned layer that consists of two cobalt iron layers separated by a layer of either ruthenium, iridium, or rhodium. A key feature of the invention is that this spacer layer is significantly thinner (typically 3-4 Angstroms) than similar layers in prior art structures. Normally, when such thin spacer layers are used, annealing fields in excess of 20,000 Oersted are needed to cause the two cobalt iron layers to become antiparallel. The present invention, however, teaches that much lower annealing fields (spanning a limited range) may be used with equal effect. The result is that a very high internal pinning field is created giving devices of this type greater pinned layer stability and reduced pinning reversal. These devices also exhibits a minimum amount of open looping in their hysteresis curves.

摘要翻译： 描述了一种自旋阀结构及其制造方法。 自旋阀使用由两层钴铁层组成的改性钉扎层，其由钌，铱或铑层分开。 本发明的一个关键特征是该间隔层比现有技术结构中相似的层明显更薄（通常为3-4埃）。 通常，当使用这种薄的间隔层时，需要超过20,000奥斯特的退火场，以使两个钴铁层变得反平行。 然而，本发明教导了可以使用相同效果的低得多的退火场（跨越有限范围）。 结果是产生非常高的内部钉扎场，使得这种类型的装置更大的被钉扎层稳定性并减少钉扎反转。 这些装置在其滞后曲线中也表现出最小量的开环。

公开(公告)号：US06522507B1

公开(公告)日：2003-02-18

申请号：US09570017

申请日：2000-05-12

申请人： Cheng T. Horng ,  Min Li ,  Ru-Ying Tong

发明人： Cheng T. Horng ,  Min Li ,  Ru-Ying Tong

IPC分类号： G11B539

CPC分类号： B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49044

摘要： A method for fabricating a single top spin valve head that is capable of reading ultra-high density recordings. Said top spin valve has a CoFe free layer for high GMR ratio, which is grown on a NiCr/Ru layer to provide better magnetic properties and has a ferromagnetically coupled CoFe/NiCr/CoFe laminated pinned layer for thermal stability and robustness.

摘要翻译： 一种能够读取超高密度记录的单顶旋转阀头的制造方法。 所述顶部自旋阀具有用于高GMR比的CoFe自由层，其在NiCr / Ru层上生长以提供更好的磁性，并具有用于热稳定性和鲁棒性的铁磁耦合CoFe / NiCr / CoFe层压钉扎层。

公开(公告)号：US08184411B2

公开(公告)日：2012-05-22

申请号：US12589614

申请日：2009-10-26

申请人： Kunliang Zhang ,  Min Li ,  Pokang Wang ,  Yuchen Zhou ,  Cheng T. Horng ,  Ru-Ying Tong

发明人： Kunliang Zhang ,  Min Li ,  Pokang Wang ,  Yuchen Zhou ,  Cheng T. Horng ,  Ru-Ying Tong

IPC分类号： G11B5/33

CPC分类号： G11B5/3153 ,  B82Y40/00 ,  C23C14/165 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/1278 ,  G11B2005/0024 ,  H01F10/30 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T156/10 ,  Y10T428/1107 ,  Y10T428/1114

摘要： A MTJ for a spintronic device is disclosed and includes a thin composite seed layer made of at least Ta and a metal layer having fcc(111) or hcp(001) texture as in Ta/Ti/Cu to enhance perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (CoFe/Ni)x, (Co/NiFe)x, (Co/NiCo)x, (CoFe/NiFe)x, or (CoFe/NiCo)x composition where x is from 5 to 30. In one embodiment, a CPP-TMR spin valve has one or both of a laminated free layer and laminated reference layer with the aforementioned compositions. The MTJ includes an interfacial layer made of CoFeB, CoFeB/CoFe, or CoFe/CoFeB between each laminated structure and the tunnel barrier. The laminated layers are deposited by a low power and high Ar pressure process to avoid damaging interfaces between adjoining layers. Annealing occurs at 220° C. to 400° C. A laminated layer with high PMA may also be included in one or more layers of a spin transfer oscillator.

摘要翻译： 公开了一种用于自旋电子器件的MTJ，并且包括由至少Ta制成的薄复合种子层和具有如Ta / Ti / Cu中的fcc（111）或hcp（001）织构的金属层以增强垂直磁各向异性（PMA） 在具有（CoFe / Ni）x，（Co / NiFe）x，（Co / NiCo）x，（CoFe / NiFe）x或（CoFe / NiCo）x）组合物的叠层层中，x为5〜 在一个实施方案中，CPP-TMR自旋阀具有上述组成的层压自由层和层压参考层之一或两者。 MTJ包括在每个层压结构和隧道势垒之间由CoFeB，CoFeB / CoFe或CoFe / CoFeB制成的界面层。 层压层通过低功率和高Ar压力过程沉积，以避免相邻层之间的界面损坏。 在220℃至400℃发生退火。具有高PMA的叠层也可以包括在一个或多个自旋转移振荡器层中。

公开(公告)号：US20110096443A1

公开(公告)日：2011-04-28

申请号：US12589614

申请日：2009-10-26

申请人： Kunliang Zhang ,  Min Li ,  Pokang Wang ,  Yuchen Zhou ,  Cheng T. Horng ,  Ru-Ying Tong

发明人： Kunliang Zhang ,  Min Li ,  Pokang Wang ,  Yuchen Zhou ,  Cheng T. Horng ,  Ru-Ying Tong

IPC分类号： G11B5/33 ,  G11B5/39 ,  B32B37/00 ,  C23C14/35

CPC分类号： G11B5/3153 ,  B82Y40/00 ,  C23C14/165 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/1278 ,  G11B2005/0024 ,  H01F10/30 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T156/10 ,  Y10T428/1107 ,  Y10T428/1114

摘要： A MTJ for a spintronic device is disclosed and includes a thin composite seed layer made of at least Ta and a metal layer having fcc(111) or hcp(001) texture as in Ta/Ti/Cu to enhance perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (CoFe/Ni)X, (Co/NiFe)X, (Co/NiCo)X, (CoFe/NiFe)X, or (CoFe/NiCo)X composition where x is from 5 to 30. In one embodiment, a CPP-TMR spin valve has one or both of a laminated free layer and laminated reference layer with the aforementioned compositions. The MTJ includes an interfacial layer made of CoFeB, CoFeB/CoFe, or CoFe/CoFeB between each laminated structure and the tunnel barrier. The laminated layers are deposited by a low power and high Ar pressure process to avoid damaging interfaces between adjoining layers. Annealing occurs at 220° C. to 400° C. A laminated layer with high PMA may also be included in one or more layers of a spin transfer oscillator.

摘要翻译： 公开了一种用于自旋电子器件的MTJ，并且包括由至少Ta制成的薄复合种子层和具有如Ta / Ti / Cu中的fcc（111）或hcp（001）织构的金属层以增强垂直磁各向异性（PMA） 在具有（CoFe / Ni）X，（Co / NiFe）X，（Co / NiCo）X，（CoFe / NiFe）X或（CoFe / NiCo）X组合物的叠层中，其中x为5至30 在一个实施方案中，CPP-TMR自旋阀具有上述组成的层压自由层和层压参考层之一或两者。 MTJ包括在每个层压结构和隧道势垒之间由CoFeB，CoFeB / CoFe或CoFe / CoFeB制成的界面层。 层压层通过低功率和高Ar压力过程沉积，以避免相邻层之间的界面损坏。 在220℃至400℃发生退火。具有高PMA的叠层也可以包括在一个或多个自旋转移振荡器层中。

公开(公告)号：US07390529B2

公开(公告)日：2008-06-24

申请号：US10854651

申请日：2004-05-26

申请人： Min Li ,  Cheng T. Horng ,  Cherng Chyi Han ,  Yu-Hsia Chen ,  Ru-Ying Tong

发明人： Min Li ,  Cheng T. Horng ,  Cherng Chyi Han ,  Yu-Hsia Chen ,  Ru-Ying Tong

IPC分类号： B05D5/12

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F41/302 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044

摘要： By using a free layer that includes a NiFe layer containing between 65 and 72 atomic percent iron, an improved CPP GMR device has been created. The resulting structure yields a higher CPP GMR ratio than prior art devices, while maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.

摘要翻译： 通过使用包含含有65至72原子％铁的NiFe层的自由层，已经创建了改进的CPP GMR器件。 所得到的结构产生比现有技术的装置更高的CPP GMR比，同时保持自由层柔软性和可接受的磁致伸缩。 还描述了用于制造该装置的方法。