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1.发明授权公开(公告)号：US08624345B2
公开(公告)日：2014-01-07
申请号：US13486995
申请日：2012-06-01
申请人： Ken Wu , Hung-Chang Hsieh , Chang-Cheng Hung , Luke Hsu , Ren-Guey Hsieh , Hsin-Chang Lee , Chia-Jen Chen
发明人： Ken Wu , Hung-Chang Hsieh , Chang-Cheng Hung , Luke Hsu , Ren-Guey Hsieh , Hsin-Chang Lee , Chia-Jen Chen
CPC分类号： G03F7/70941 , G03F1/26 , G03F1/46 , G03F7/70433
摘要： A mask substrate, photomask and method for forming the same are provided. The photomask includes a substantially light transparent substrate and a circuitry pattern disposed over the light transparent substrate. The circuitry pattern includes a phase shifting layer disposed over the substantially light transparent substrate. A substantially light shielding layer is disposed over the phase shifting layer. At least one barrier layer is disposed over the substantially light shielding layer. An uppermost portion of the substantially light shielding layer does not comprise anti-reflective properties and the at least one barrier layer comprises an uppermost hardmask layer and an underlying anti-reflective layer.
摘要翻译： 提供了掩模基板，光掩模及其形成方法。 光掩模包括基本上透明的基板和设置在光透明基板上的电路图案。 电路图案包括设置在基本上光透明基底上的相移层。 基本上遮光层设置在相移层上。 至少一个阻挡层设置在基本上遮光层上。 基本上遮光层的最上部分不包括抗反射性质，并且至少一个阻挡层包括最上面的硬掩模层和下面的抗反射层。
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公开(公告)号：US08198118B2
公开(公告)日：2012-06-12
申请号：US11590257
申请日：2006-10-31
申请人： Ken Wu , Hung-Chang Hsieh , Chang-Cheng Hung , Luke Hsu , Ren-Guey Hsieh , Hsin-Chang Lee , Chia-Jen Chen
发明人： Ken Wu , Hung-Chang Hsieh , Chang-Cheng Hung , Luke Hsu , Ren-Guey Hsieh , Hsin-Chang Lee , Chia-Jen Chen
CPC分类号： G03F7/70941 , G03F1/26 , G03F1/46 , G03F7/70433
摘要： A mask and method for forming the same including carrying out a photolithographic patterning process the method including providing a substantially light transparent portion; forming a substantially light shielding layer disposed over the substantially light transparent portion; forming at least one barrier layer disposed over the substantially light shielding layer; forming a resist layer disposed over the at least one barrier layer; patterning the resist layer for producing a circuitry pattern; and, carrying out an etching process according to the circuitry pattern to expose a portion of the substantially light transparent portion to form a mask.
摘要翻译： 一种掩模及其形成方法，包括进行光刻图案处理，该方法包括提供基本上透明的部分; 形成设置在所述基本上透明部分上的基本上遮光层; 形成设置在所述基本上遮光层上的至少一个势垒层; 形成设置在所述至少一个阻挡层上的抗蚀剂层; 图案化抗蚀剂层以产生电路图案; 并且根据电路图案进行蚀刻处理以暴露基本上光透明部分的一部分以形成掩模。
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公开(公告)号：US08916482B2
公开(公告)日：2014-12-23
申请号：US13437075
申请日：2012-04-02
申请人： Hsin-Chang Lee , Yun-Yue Lin , Hung-Chang Hsieh , Chia-Jen Chen , Yih-Chen Su , Ta-Cheng Lien , Anthony Yen
发明人： Hsin-Chang Lee , Yun-Yue Lin , Hung-Chang Hsieh , Chia-Jen Chen , Yih-Chen Su , Ta-Cheng Lien , Anthony Yen
IPC分类号： H01L21/31
CPC分类号： G03F1/76
摘要： A method of making a lithography mask with a stress-relief treatment is disclosed. The method includes providing a substrate and depositing an opaque layer on the substrate. The opaque layer is patterned to form a patterned mask. A stress-relief treatment is applied to the patterned mask by using an radiation exposure.
摘要翻译： 公开了一种制造具有应力消除处理的光刻掩模的方法。 该方法包括提供衬底并在衬底上沉积不透明层。 将不透明层图案化以形成图案化掩模。 通过使用辐射照射对图案化掩模施加应力消除处理。
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4.发明授权Aperture design for improving critical dimension accuracy and electron beam lithography throughput 失效孔径设计，用于提高临界尺寸精度和电子束光刻产量公开(公告)号：US07642532B2
公开(公告)日：2010-01-05
申请号：US11340249
申请日：2006-01-26
申请人： Chia-Jen Chen , Hsin-Chang Lee , Hung Chang Hsieh
发明人： Chia-Jen Chen , Hsin-Chang Lee , Hung Chang Hsieh
IPC分类号： H01J37/28
CPC分类号： G06Q40/00 , B82Y10/00 , B82Y40/00 , G03F1/78 , H01J37/3174
摘要： Disclosed is an improved aperture design for improving critical dimension accuracy and electron beam lithography. A pattern may be created on a reticle by passing an electron beam through a first aperture having a first shape comprising an upper horizontal edge, a lower horizontal edge, a vertical edge, an upper bevel, and a lower bevel, wherein a portion of the electron beam is projected onto a second aperture. The portion of the electronic beam is passed through the second aperture having a second shape, wherein the second shape is the first shape rotated horizontally by 180 degrees, and an overlapped portion of the first and second aperture is exposed on a surface of the reticle to create a pattern.
摘要翻译： 公开了一种改进的孔径设计，用于改进临界尺寸精度和电子束光刻。 可以通过使电子束通过具有包括上部水平边缘，下部水平边缘，垂直边缘，上部斜面和下部斜面的第一形状的第一孔而在掩模版上形成图案，其中， 电子束投射到第二孔上。 电子束的部分通过具有第二形状的第二孔，其中第二形状是水平旋转180度的第一形状，并且第一和第二孔的重叠部分暴露在掩模版的表面上 创建一个模式。
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5.发明授权公开(公告)号：US07999910B2
公开(公告)日：2011-08-16
申请号：US11115433
申请日：2005-04-27
CPC分类号： G03F7/38
摘要： The present disclosure provides a system and method for manufacturing a mask for semiconductor processing. In one example, the system includes at least one exposure unit configured to select a recipe for a later baking process in a post treatment unit, a buffer unit coupled to the exposure unit and configured to move the mask substrate from the exposure unit to the post treatment unit without exposing the mask substrate to the environment; and the post treatment unit coupled to the buffer unit and the exposure unit and configured to perform a baking process on the mask substrate using baking parameters associated with the recipe selected by the exposure unit.
摘要翻译： 本公开提供了一种用于制造用于半导体处理的掩模的系统和方法。 在一个示例中，系统包括至少一个曝光单元，其被配置为在后处理单元中选择用于稍后烘焙处理的配方，缓冲单元，其耦合到曝光单元并且被配置为将掩模基板从曝光单元移动到柱 处理单元，而不将掩模基板暴露于环境中; 以及所述后处理单元，其耦合到所述缓冲单元和所述曝光单元，并且被配置为使用与由所述曝光单元选择的所述配方相关联的烘焙参数对所述掩模基板进行烘烤处理。
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公开(公告)号：US20130260573A1
公开(公告)日：2013-10-03
申请号：US13437075
申请日：2012-04-02
申请人： Hsin-Chang Lee , Yun-Yue Lin , Hung-Chang Hsieh , Chia-Jen Chen , Yih-Chen Su , Ta-Cheng Lien , Anthony Yen
发明人： Hsin-Chang Lee , Yun-Yue Lin , Hung-Chang Hsieh , Chia-Jen Chen , Yih-Chen Su , Ta-Cheng Lien , Anthony Yen
IPC分类号： H01L21/033
CPC分类号： G03F1/76
摘要： A method of making a lithography mask with a stress-relief treatment is disclosed. The method includes providing a substrate and depositing an opaque layer on the substrate. The opaque layer is patterned to form a patterned mask. A stress-relief treatment is applied to the patterned mask by using an radiation exposure.
摘要翻译： 公开了一种制造具有应力消除处理的光刻掩模的方法。 该方法包括提供衬底并在衬底上沉积不透明层。 将不透明层图案化以形成图案化掩模。 通过使用辐射照射对图案化掩模施加应力消除处理。
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7.发明申请公开(公告)号：US20120237861A1
公开(公告)日：2012-09-20
申请号：US13486995
申请日：2012-06-01
申请人： Ken Wu , Hung-Chang Hsieh , Chang-Cheng Hung , Luke Hsu , Ren-Guey Hsieh , Hsin-Chang Lee , Chia-Jen Chen
发明人： Ken Wu , Hung-Chang Hsieh , Chang-Cheng Hung , Luke Hsu , Ren-Guey Hsieh , Hsin-Chang Lee , Chia-Jen Chen
IPC分类号： G03F1/26
CPC分类号： G03F7/70941 , G03F1/26 , G03F1/46 , G03F7/70433
摘要： A mask substrate, photomask and method for forming the same are provided. The photomask includes a substantially light transparent substrate and a circuitry pattern disposed over the light transparent substrate. The circuitry pattern includes a phase shifting layer disposed over the substantially light transparent substrate. A substantially light shielding layer is disposed over the phase shifting layer. At least one barrier layer is disposed over the substantially light shielding layer. An uppermost portion of the substantially light shielding layer does not comprise anti-reflective properties and the at least one barrier layer comprises an uppermost hardmask layer and an underlying anti-reflective layer.
摘要翻译： 提供了掩模基板，光掩模及其形成方法。 光掩模包括基本上透明的基板和设置在光透明基板上的电路图案。 电路图案包括设置在基本上光透明基底上的相移层。 基本上遮光层设置在相移层上。 至少一个阻挡层设置在基本上遮光层上。 基本上遮光层的最上部分不包括抗反射性质，并且至少一个阻挡层包括最上面的硬掩模层和下面的抗反射层。
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公开(公告)号：US20080102379A1
公开(公告)日：2008-05-01
申请号：US11590257
申请日：2006-10-31
申请人： Ken Wu , Hung-Chang Hsieh , Chang-Cheng Hung , Luke Hsu , Ren-Guey Hsieh , Hsin-Chang Lee , Chia-Jen Chen
发明人： Ken Wu , Hung-Chang Hsieh , Chang-Cheng Hung , Luke Hsu , Ren-Guey Hsieh , Hsin-Chang Lee , Chia-Jen Chen
IPC分类号： H01L21/00
CPC分类号： G03F7/70941 , G03F1/26 , G03F1/46 , G03F7/70433
摘要： A mask and method for forming the same including carrying out a photolithographic patterning process the method including providing a substantially light transparent portion; forming a substantially light shielding layer disposed over the substantially light transparent portion; forming at least one barrier layer disposed over the substantially light shielding layer; forming a resist layer disposed over the at least one barrier layer; patterning the resist layer for producing a circuitry pattern; and, carrying out an etching process according to the circuitry pattern to expose a portion of the substantially light transparent portion to form a mask.
摘要翻译： 一种掩模及其形成方法，包括进行光刻图案处理，该方法包括提供基本上透明的部分; 形成设置在所述基本上透明部分上的基本上遮光层; 形成设置在所述基本上遮光层上的至少一个阻挡层; 形成设置在所述至少一个阻挡层上的抗蚀剂层; 图案化抗蚀剂层以产生电路图案; 并且根据电路图案进行蚀刻处理以暴露基本上光透明部分的一部分以形成掩模。
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9.发明授权公开(公告)号：US08656318B2
公开(公告)日：2014-02-18
申请号：US13464116
申请日：2012-05-04
申请人： Hsin-Chang Lee , Chia-Jen Chen , Yeh Lee-Chih , Sheng-Chi Chin , Ting-Hao Hsu , Anthony Yen
发明人： Hsin-Chang Lee , Chia-Jen Chen , Yeh Lee-Chih , Sheng-Chi Chin , Ting-Hao Hsu , Anthony Yen
IPC分类号： G06F17/50
摘要： A method and system for measuring layer overlay and for inspecting a mask for defects unrelated to overlay utilizing a singe comprehensive tool is disclosed. An exemplary method includes receiving a mask design database that corresponds to a mask and has a die area with a mask database feature. A mask image of the mask is received, and a comprehensive inspection system compares the mask image to the mask design database in order to detect mask defects that are not related to layer alignment. The system produces mask defect information corresponding to the mask defects. The comprehensive inspection system also compares the mask image to the mask design database to determine a database-to-mask offset. From the database-to-mask offset, a mask overlay characteristic is determined.
摘要翻译： 公开了一种用于测量层叠覆盖层的方法和系统，并且用于使用单个综合工具来检查与覆盖无关的缺陷的掩模。 一种示例性方法包括接收对应于掩模并且具有掩模数据库特征的管芯区域的掩模设计数据库。 接收掩模的掩模图像，并且综合检查系统将掩模图像与掩模设计数据库进行比较，以便检测与层对齐无关的掩模缺陷。 系统产生对应于掩模缺陷的掩模缺陷信息。 综合检查系统还将掩模图像与掩模设计数据库进行比较，以确定数据库对掩模偏移量。 从数据库到掩码偏移，确定掩模覆盖特性。
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公开(公告)号：US20130260289A1
公开(公告)日：2013-10-03
申请号：US13437565
申请日：2012-04-02
申请人： Yun-Yue Lin , Hsin-Chang Lee , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
发明人： Yun-Yue Lin , Hsin-Chang Lee , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
摘要： A method of fabricating a lithography mask with carbon-based-charging-dissipation (CBCD) layer is disclosed. The method includes providing a substrate, depositing an opaque layer on the substrate, coating a photoresist and depositing a charging dissipation layer on the photoresist. The photoresist is patterned by an electron-beam writing. The CBCD layer is removed during developing the photoresist.
摘要翻译： 公开了一种制造具有碳基带电耗散（CBCD）层的光刻掩模的方法。 该方法包括提供衬底，在衬底上沉积不透明层，涂覆光致抗蚀剂并在光致抗蚀剂上沉积充电耗散层。 光刻胶通过电子束写入进行图案化。 在显影光致抗蚀剂期间去除CBCD层。
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