Cable tightening device having anti-theft function
    1.
    发明授权
    Cable tightening device having anti-theft function 失效
    电缆紧固装置具有防盗功​​能

    公开(公告)号:US07360753B1

    公开(公告)日:2008-04-22

    申请号:US11645930

    申请日:2006-12-27

    申请人: Chia-Sheng Lin

    发明人: Chia-Sheng Lin

    IPC分类号: B25B9/00

    摘要: A cable tightening device includes a fixed unit, a rotation member rotatably mounted on the fixed unit, a movable unit mounted on the rotation member and movable relative to the fixed unit to drive the rotation member to rotate relative to the fixed unit in a oneway direction, and a locking unit mounted between the fixed unit and the movable unit to releasably lock the movable unit onto the fixed unit. Thus, the movable unit is locked onto the fixed unit by the locking unit to lock the cable tightening device and the cable so as to protect the cargo wound by the cable, thereby achieving an anti-theft purpose.

    摘要翻译: 电缆紧固装置包括固定单元,可旋转地安装在固定单元上的旋转构件,安装在旋转构件上并可相对于固定单元移动的可移动单元,以驱动旋转构件相对于固定单元在单向方向上旋转 以及安装在固定单元和可移动单元之间以将可移动单元可释放地锁定到固定单元上的锁定单元。 因此,可动单元通过锁定单元锁定在固定单元上,以锁定电缆紧固装置和电缆,以保护由电缆缠绕的货物,从而实现防盗目的。

    Length adjustment mechanism of expandable rod
    2.
    发明授权
    Length adjustment mechanism of expandable rod 失效
    膨胀杆长度调节机构

    公开(公告)号:US06837642B1

    公开(公告)日:2005-01-04

    申请号:US10400682

    申请日:2003-03-28

    申请人: Chia-Sheng Lin

    发明人: Chia-Sheng Lin

    IPC分类号: F16B7/10

    摘要: The length adjustment of an expandable rod is attained by a drive gear and a driven gear which is engaged with the drive gear and gear slots of an inner tube of the expandable rod. The inner tube is located inside an outer tube of the expandable rod by a locating member which is provided with a locating projection capable of locating in one of the gear slots of the inner tube.

    摘要翻译: 可扩展杆的长度调节通过驱动齿轮和从动齿轮来实现,驱动齿轮和从动齿轮与可扩展杆的内管的驱动齿轮和齿轮槽接合。 内管通过定位构件位于可扩张杆的外管内,定位构件设置有能够定位在内管的齿轮槽之一中的定位突起。

    Process of Fabricating Semiconductor Device and Through Substrate via, and Through Substrate via Structure Therefrom
    5.
    发明申请
    Process of Fabricating Semiconductor Device and Through Substrate via, and Through Substrate via Structure Therefrom 有权
    制造半导体器件和通过衬底通过衬底通过结构的工艺

    公开(公告)号:US20120133049A1

    公开(公告)日:2012-05-31

    申请号:US13303208

    申请日:2011-11-23

    摘要: A method of fabricating a semiconductor device, a process of fabricating a through substrate via and a substrate with through vias are provided. The substrate with through vias includes a semiconductor substrate having a back surface and a via penetrating the back surface, a metal layer, a first insulating layer and a second insulating layer. The first insulating layer is formed on the back surface of the substrate and has an opening connected to the through via. The second insulating layer is formed on the first insulating layer and has a portion extending into the opening and the via to form a trench insulating layer. The bottom of the trench insulating layer is etched back to form a footing portion at the corner of the via. The footing portion has a height less than a total height of the first and second insulating layers.

    摘要翻译: 提供了制造半导体器件的方法,制造通孔基板通孔的工艺和具有通孔的基板。 具有贯通孔的基板包括具有后表面和穿过背面的通孔的半导体基板,金属层,第一绝缘层和第二绝缘层。 第一绝缘层形成在基板的背面,并且具有连接到通孔的开口。 第二绝缘层形成在第一绝缘层上,并且具有延伸到开口中的部分和通孔以形成沟槽绝缘层。 沟槽绝缘层的底部被回蚀以在通孔的拐角处形成基部。 所述基脚部分的高度小于所述第一和第二绝缘层的总高度。

    OPERATION METHOD OF MEMORY DEVICE
    10.
    发明申请
    OPERATION METHOD OF MEMORY DEVICE 有权
    存储器件的操作方法

    公开(公告)号:US20110103155A1

    公开(公告)日:2011-05-05

    申请号:US12841739

    申请日:2010-07-22

    IPC分类号: G11C16/04

    摘要: One embodiment of the present invention provides an operation method of a memory device. The memory device includes a source, a drain, and a channel region between the source and the drain, a gate dielectric with a charge storage layer on the channel region, and a gate on the gate dielectric, wherein the source, the drain and the channel region are located in a substrate. The operation method includes the following steps: applying a reverse bias between the gate and the drain of the memory device to generate band-to-band hot holes in the substrate near the drain; injecting the band-to-band hot holes to a drain side of the charge storage layer; and performing a program/erase operation upon the memory device. The band-to-band hot holes in the drain side of the charge storage layer are not completely vanished by the program/erase operation.

    摘要翻译: 本发明的一个实施例提供一种存储装置的操作方法。 存储器件包括源极和漏极之间的源极,漏极和沟道区域,在沟道区域上具有电荷存储层的栅极电介质和栅极电介质上的栅极,其中源极,漏极和漏极 沟道区域位于衬底中。 操作方法包括以下步骤:在存储器件的栅极和漏极之间施加反向偏置,以在漏极附近的衬底中产生带对带热孔; 将带 - 带热孔注入到电荷存储层的漏极侧; 以及对存储器件执行编程/擦除操作。 通过编程/擦除操作,电荷存储层的漏极侧的带对带热孔并不完全消失。