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1.发明授权Method of fabricating semiconductor devices with raised doped region structures 失效制造具有凸起掺杂区域结构的半导体器件的方法
公开(公告)号：US6114209A
公开(公告)日：2000-09-05
申请号：US45102
申请日：1998-03-19
Applicant: Chih-Hsun Chu , Tzu-Jin Yeh
Inventor： Chih-Hsun Chu , Tzu-Jin Yeh
IPC: H01L21/285 , H01L21/336 , H01L29/417
CPC classification number: H01L29/6659 , H01L21/28518 , H01L21/28525 , H01L29/41775 , H01L29/41783 , H01L29/665 , H01L29/66545
Abstract: A method of manufacturing a semiconductor device with raised source/drain. This method eliminates the problem which is often experienced when the shallow junction technique is applied, in which over-etching of the source/drain region during the contact etching and the salicide process can lead to current leakages. The improved method includes the steps of forming a buffer conductive blocks on the source/drain regions which increase the thickness of source/drain regions. A related semiconductor structure made by the method has a plurality of bi-flange shape side wall spacers by which the semiconductor structure not only elevates the doped regions, it also provides an improved capability to suppress the electric bridges between the gate electrode and source/drain regions, respectively.
Abstract translation: 一种制造具有升高的源极/漏极的半导体器件的方法。 该方法消除了当应用浅结技术时经常遇到的问题，其中在接触蚀刻和自对准处理过程中源极/漏极区域的过度蚀刻可导致电流泄漏。 改进的方法包括以下步骤：在源/漏区上形成缓冲导电块，增加源极/漏极区的厚度。 通过该方法制造的相关半导体结构具有多个双凸缘形状的侧壁间隔件，通过该多个双凸缘形状的侧壁间隔件，半导体结构不仅提高了掺杂区域，而且还提供了改善的能力，以抑制栅电极和源极/漏极 区域。
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2.发明授权Through-chip interface (TCI) structure for wireless chip-to-chip communication 有权用于无线芯片到芯片通信的片上接口（TCI）结构公开(公告)号：US09064631B2
公开(公告)日：2015-06-23
申请号：US13350206
申请日：2012-01-13
Applicant: Jun-De Jin , Tzu-Jin Yeh
Inventor： Jun-De Jin , Tzu-Jin Yeh
IPC: H01F38/14 , H01F37/00 , H01F27/28 , H01L23/522 , H01L23/64 , H01L25/065 , H01L23/48
CPC classification number: H01F38/14 , H01F27/2804 , H01F37/00 , H01L23/48 , H01L23/5227 , H01L23/64 , H01L25/0657 , H01L2224/32145 , H01L2225/06531
Abstract: A transformer for RF and other frequency through-chip-interface (TCI) applications includes multiple chips in wireless electronic communication with one another in three-dimensional integrated circuit, 3DIC, technology. Each of the chips includes an inductor coil and a matching network that matches the impedance of the inductor coil. The matching network is electrically coupled between the inductor coil and further components and circuits formed on the chip.
Abstract translation: 用于RF和其他频率通过芯片接口（TCI）应用的变压器包括在三维集成电路，3DIC技术中彼此无线电子通信的多个芯片。 每个芯片包括电感线圈和与电感线圈的阻抗匹配的匹配网络。 匹配网络电耦合在电感线圈和形成在芯片上的其它部件和电路之间。
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公开(公告)号：US20130328623A1
公开(公告)日：2013-12-12
申请号：US13494263
申请日：2012-06-12
Applicant: Jun-De Jin , Tzu-Jin Yeh
Inventor： Jun-De Jin , Tzu-Jin Yeh
CPC classification number: H03H7/0115 , H03H7/1758 , H03H11/48
Abstract: Some embodiments relate to a band-pass filter arranged in a ladder-like structure. The band-pass filter includes respective inductor-capacitor (LC) resonators arranged on respective rungs of the ladder-like structure. Respective matching circuits are arranged on a leg of the ladder-like structure between neighboring rungs.
Abstract translation: 一些实施例涉及布置成阶梯状结构的带通滤波器。 带通滤波器包括布置在阶梯状结构的各个梯级上的相应的电感器 - 电容器（LC）谐振器。 相应的匹配电路布置在相邻梯级之间的梯状结构的腿上。
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公开(公告)号：US08502620B2
公开(公告)日：2013-08-06
申请号：US12944847
申请日：2010-11-12
Applicant: Jhe-Ching Lu , Hsiao-Tsung Yen , Sally Liu , Tzu-Jin Yeh , Min-Chie Jeng
Inventor： Jhe-Ching Lu , Hsiao-Tsung Yen , Sally Liu , Tzu-Jin Yeh , Min-Chie Jeng
CPC classification number: H01F21/12 , H01F27/2804 , H01F2027/2809 , H03H7/42 , Y10T29/49117
Abstract: A system and method for transmitting signals is disclosed. An embodiment comprises a balun, such as a Marchand balun, which has a first transformer with a primary coil and a first secondary coil and a second transformer with the primary coil and a second secondary coil. The first secondary coil and the second secondary coil are connected to a ground plane, and the ground plane has slot lines located beneath the separation of the coils in the first transformer and the second transformer. The slot lines may also have fingers.
Abstract translation: 公开了一种用于发送信号的系统和方法。 一个实施例包括一个平衡 - 不平衡变换器，例如Marchand平衡 - 不平衡转换器，其具有带初级线圈的第一变压器和第一次级线圈，以及具有初级线圈的第二变压器和第二次级线圈。 第一次级线圈和第二次级线圈连接到接地平面，并且接地平面具有位于第一变压器和第二变压器中的线圈分离下方的槽线。 缝线也可以具有手指。
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公开(公告)号：US20120119845A1
公开(公告)日：2012-05-17
申请号：US12944847
申请日：2010-11-12
Applicant: Jhe-Ching Lu , Hsiao-Tsung Yen , Sally Liu , Tzu-Jin Yeh , Min-Chie Jeng
Inventor： Jhe-Ching Lu , Hsiao-Tsung Yen , Sally Liu , Tzu-Jin Yeh , Min-Chie Jeng
CPC classification number: H01F21/12 , H01F27/2804 , H01F2027/2809 , H03H7/42 , Y10T29/49117
Abstract: A system and method for transmitting signals is disclosed. An embodiment comprises a balun, such as a Marchand balun, which has a first transformer with a primary coil and a first secondary coil and a second transformer with the primary coil and a second secondary coil. The first secondary coil and the second secondary coil are connected to a ground plane, and the ground plane has slot lines located beneath the separation of the coils in the first transformer and the second transformer. The slot lines may also have fingers.
Abstract translation: 公开了一种用于发送信号的系统和方法。 一个实施例包括一个平衡 - 不平衡变换器，例如Marchand平衡 - 不平衡转换器，其具有带初级线圈的第一变压器和第一次级线圈，以及具有初级线圈的第二变压器和第二次级线圈。 第一次级线圈和第二次级线圈连接到接地平面，并且接地平面具有位于第一变压器和第二变压器中的线圈分离下方的槽线。 缝线也可以具有手指。
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Patent Agency Ranking
公开(公告)号：US20090195327A1
公开(公告)日：2009-08-06
申请号：US12023184
申请日：2008-01-31
Applicant: Shu-Ying Cho , Tzu-Jin Yeh , Sally Liu
Inventor： Shu-Ying Cho , Tzu-Jin Yeh , Sally Liu
IPC: H01P3/08
CPC classification number: H01P3/003 , H01P3/06 , H05K1/0219 , H05K1/0242 , H05K1/025 , H05K2201/09236 , H05K2201/09727 , H05K2201/09781
Abstract: A semiconductor device for transmitting a radio frequency signal along a signal line includes a signal line that extends along a principal axis. On one side of the signal line is a first dielectric, and on the opposite side of the signal line is a second dielectric. First and second ground lines are proximate to the first and second dielectrics, respectively, and the ground lines are approximately parallel to the signal line. The device has a transverse cross-section that varies along the principal axis.
Abstract translation: 沿着信号线发送射频信号的半导体装置包括沿主轴延伸的信号线。 在信号线的一侧是第一电介质，信号线的相对侧是第二电介质。 第一和第二接地线分别靠近第一和第二电介质，并且接地线近似平行于信号线。 该装置具有沿主轴变化的横截面。
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7.发明授权Power cell, power cell circuit for a power amplifier and a method of making and using a power cell 有权功率单元，功率放大器的功率单元电路以及制造和使用功率单元的方法公开(公告)号：US09490248B2
公开(公告)日：2016-11-08
申请号：US13753995
申请日：2013-01-30
Applicant: Tzu-Jin Yeh , Chewn-Pu Jou , Jun-De Jin
Inventor： Tzu-Jin Yeh , Chewn-Pu Jou , Jun-De Jin
CPC classification number: H01L27/0629 , H01L29/0653 , H01L29/1087 , H01L29/66484 , H01L29/66636 , H01L29/7832 , H03K17/102 , H03K2217/0018
Abstract: A power cell including an isolation region having a first dopant type formed in a substrate. The power cell further includes a bottom gate having a second dopant type different from the first dopant type formed on the isolation region and a channel layer having the first dopant type formed on the bottom gate. The power cell further includes source/drain regions having the first dopant type formed in the channel layer and a first well region having the second dopant type formed around the channel layer and the source/drain regions, and the first well region electrically connected to the bottom gate. The power cell further includes a second well region having the first dopant type formed around the channel layer and contacting the isolation region and a gate structure formed on the channel layer.
Abstract translation: 一种功率单元，包括形成在基板中的具有第一掺杂剂类型的隔离区域。 功率单元还包括具有不同于在隔离区上形成的第一掺杂剂类型的第二掺杂剂型的底栅和在底栅上形成的具有第一掺杂剂类型的沟道层。 功率单元还包括在沟道层中形成的具有第一掺杂剂类型的源极/漏极区域和形成在沟道层和源极/漏极区域周围的具有第二掺杂剂类型的第一阱区域，以及与第一阱区域电连接的第一阱区域 底门 功率单元还包括具有第一掺杂剂类型的第二阱区，该第二阱区形成在沟道层周围并与隔离区接触并形成在沟道层上的栅极结构。
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公开(公告)号：US09424970B2
公开(公告)日：2016-08-23
申请号：US12955527
申请日：2010-11-29
Applicant: Jun-De Jin , Tzu-Jin Yeh
Inventor： Jun-De Jin , Tzu-Jin Yeh
CPC classification number: H01F5/003 , H01F27/2804 , H01F2017/0046 , H01F2027/2809
Abstract: A device includes a first plurality of dielectric layers over a substrate and a second plurality of dielectric layers over the first plurality of dielectric layers. A metal inductor includes a first metal portion, a second metal portion, a third metal portion, and a fourth metal portion, wherein each of the first, the second, the third, and the fourth metal portions extends into the first and the second plurality of dielectric layers. A first metal bridge connects the first metal portion to the second metal portion, wherein the first metal bridge extends into the first plurality of dielectric layers and not into the second plurality of dielectric layers. A second metal bridge connects the third metal portion to the fourth metal portion, wherein the second metal bridge extends into the second plurality of dielectric layers and not into the first plurality of dielectric layers.
Abstract translation: 一种器件包括在衬底上的第一多个电介质层和在第一多个电介质层上的第二多个电介质层。 金属电感器包括第一金属部分，第二金属部分，第三金属部分和第四金属部分，其中第一，第二，第三和第四金属部分中的每一个延伸到第一和第二金属部分 的介电层。 第一金属桥将第一金属部分连接到第二金属部分，其中第一金属桥延伸到第一多个电介质层中，而不延伸到第二多个电介质层中。 第二金属桥将第三金属部分连接到第四金属部分，其中第二金属桥延伸到第二多个介电层中，而不延伸到第一多个电介质层中。
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公开(公告)号：US09177715B2
公开(公告)日：2015-11-03
申请号：US12952429
申请日：2010-11-23
Applicant: Jun-De Jin , Fan-Ming Kuo , Huan-Neng Chen , Ming Hsien Tsai , Hsieh-Hung Hsieh , Tzu-Jin Yeh
Inventor： Jun-De Jin , Fan-Ming Kuo , Huan-Neng Chen , Ming Hsien Tsai , Hsieh-Hung Hsieh , Tzu-Jin Yeh
CPC classification number: H02J5/005 , H01F5/00 , H01F17/0006 , H01F38/14 , H01F2017/0086 , H02J17/00 , H02J50/12
Abstract: A transformer includes first and second semiconductor substrates. The first semiconductor substrate includes a first circuit, a first coil providing a first impedance, and a first capacitor coupled in parallel with the first coil. The second semiconductor substrate includes a second circuit, a second coil providing a second impedance and inductively coupled with the first coil, and a second capacitor coupled in parallel with the second coil.
Abstract translation: 变压器包括第一和第二半导体衬底。 第一半导体衬底包括第一电路，提供第一阻抗的第一线圈和与第一线圈并联耦合的第一电容器。 第二半导体衬底包括第二电路，提供第二阻抗并与第一线圈感应耦合的第二线圈以及与第二线圈并联耦合的第二电容器。
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公开(公告)号：US08958185B2
公开(公告)日：2015-02-17
申请号：US13029240
申请日：2011-02-17
Applicant: Ming Hsien Tsai , Jun-De Jin , Hsieh-Hung Hsieh , Tzu-Jin Yeh
Inventor： Ming Hsien Tsai , Jun-De Jin , Hsieh-Hung Hsieh , Tzu-Jin Yeh
CPC classification number: H01L27/0288 , H02H9/046
Abstract: A circuit includes a first node configured to receive a radio frequency (“RF”) signal, a first electrostatic discharge (ESD) protection circuit coupled to a first voltage supply rail for an RF circuit and to a second node, and a second ESD protection circuit coupled to the second node and to a second voltage supply node for the RF circuit. An RF choke circuit is coupled to the second node and to a third node disposed between the first node and the RF circuit.
Abstract translation: 电路包括被配置为接收射频（“RF”）信号的第一节点，耦合到用于RF电路的第一电压供电轨和第二节点的第一静电放电（ESD）保护电路，以及第二ESD保护 耦合到第二节点的电路和用于RF电路的第二电压供应节点。 RF扼流电路耦合到第二节点和设置在第一节点和RF电路之间的第三节点。
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