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    WRENCH
    3.
    发明申请
    WRENCH 审中-公开
    扳手

    公开(公告)号：US20140165791A1

    公开(公告)日：2014-06-19

    申请号：US13716818

    申请日：2012-12-17

    申请人： Chih-Hung Wu

    发明人： Chih-Hung Wu

    IPC分类号： B25B13/06

    CPC分类号： B25B13/065 ,  B25B13/04 ,  B25B13/48

    摘要： A wrench is formed with a polygonal first engaging hole that is defined by a plurality of engaging surfaces and that is adapted for engaging a head of a first bolt. Each engaging surface has a pair of plane surface portions and an intermediate surface portion interconnecting the plane surface portions and defining a groove. The grooves of the engaging surfaces collaboratively define a polygonal second engaging hale for engaging a head of a second bolt. The intermediate surface portion of each engaging surface cooperates with the corresponding plane surface portions to form two angular intersections adapted to abut respectively against side surfaces of the head of the second bolt that define a corresponding corner of the head of the second bolt.

    摘要翻译： 扳手形成有多边形第一接合孔，该多边形第一接合孔由多个接合表面限定，并且适于接合第一螺栓的头部。 每个接合表面具有一对平面表面部分和互连平面部分并限定凹槽的中间表面部分。 接合表面的凹槽协同地限定用于接合第二螺栓的头部的多边形第二接合帽。 每个接合表面的中间表面部分与对应的平面表面部分配合以形成两个角度交叉点，其适于邻接限定第二螺栓头部相应角部的第二螺栓头部的侧表面。

    Semiconductor device and method for fabricating the same
    9.
    发明授权
    Semiconductor device and method for fabricating the same 失效
    半导体装置及其制造方法

    公开(公告)号：US07075113B2

    公开(公告)日：2006-07-11

    申请号：US10704089

    申请日：2003-11-07

    申请人： Chih-Hung Wu

    发明人： Chih-Hung Wu

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/30

    摘要： A light-emitting device and method for fabricating the same are revealed. The light-emitting device includes an epitaxial structure, a P-type ohmic contact electrode and an N-type ohmic contact electrode. The epitaxial structure includes a plurality of epitaxial layers capable of emitting light and P-type contact layer. The P-type ohmic contact electrode includes a first nickel layer deposited on the epitaxial structure, a first platinum layer deposited on the first nickel layer, and a first gold layer deposited on the first platinum layer. According to the fabricating method of the light-emitting device, an epitaxial structure is first formed on the surface of a substrate, a P-type ohmic contact electrode is then formed on the epitaxial structure, and an N-type ohmic contact electrode is formed on the other surface of the substrate. Finally, an annealing process is performed at a temperature between 220° C. and 330° C.

    摘要翻译： 揭示了一种发光器件及其制造方法。 该发光器件包括外延结构，P型欧姆接触电极和N型欧姆接触电极。 外延结构包括能够发射光和P型接触层的多个外延层。 P型欧姆接触电极包括沉积在外延结构上的第一镍层，沉积在第一镍层上的第一铂层和沉积在第一铂层上的第一金层。 根据发光器件的制造方法，首先在衬底的表面上形成外延结构，然后在外延结构上形成P型欧姆接触电极，形成N型欧姆接触电极 在基板的另一表面上。 最后，在220℃至330℃的温度下进行退火处理。

    Yield analysis method
    10.
    发明申请
    Yield analysis method 有权
    产量分析法

    公开(公告)号：US20060128039A1

    公开(公告)日：2006-06-15

    申请号：US11010595

    申请日：2004-12-13

    申请人： Chen-Ting Lin ,  Chih-Hung Wu ,  Mei-Yen Li

    发明人： Chen-Ting Lin ,  Chih-Hung Wu ,  Mei-Yen Li

    IPC分类号： H01L21/66

    CPC分类号： H01L22/20

    摘要： A yield analysis method. First, a wafer having multiple dies is inspected to obtain wafer defect data containing defect information for every die in the wafer. Then a wafer map and an overall yield are generated according to the wafer defect data. The wafer map displays defective dies and defect-free dies in the wafer. Then, first and second systematic limited yields are calculated in accordance with the wafer defect data and the wafer map, wherein the first systematic limited yield is calculated excluding defective dies with localized distribution, and the second systematic limited yield is calculated excluding defective dies with repeated distribution. Then a random defect limited yield is determined in accordance with the overall yield, the first systematic limited yield, and the second systematic limited yield.

    摘要翻译： 收益分析法。 首先，检查具有多个管芯的晶片，以获得晶片缺陷数据，该晶片缺陷数据包含晶片中的每个管芯的缺陷信息。 然后根据晶片缺陷数据产生晶片图和总产量。 晶片图显示晶片中的有缺陷的裸片和无缺陷的裸片。 然后，根据晶片缺陷数据和晶片图计算第一和第二系统有限的产量，其中计算除了具有局部分布的有缺陷的模具之外的第一系统有限屈服，并且计算第二系统有限屈服， 分配。 然后根据总收益率，第一系统有限收益率和第二系统有限收益率确定随机缺陷限制收益率。