LED DEVICE WITH IMPROVED THERMAL PERFORMANCE
    1.
    发明申请
    LED DEVICE WITH IMPROVED THERMAL PERFORMANCE 有权
    具有改进的热性能的LED器件

    公开(公告)号:US20120119228A1

    公开(公告)日:2012-05-17

    申请号:US12944895

    申请日:2010-11-12

    IPC分类号: H01L33/00

    摘要: An apparatus includes a wafer with a number of openings therein. For each opening, an LED device is coupled to a conductive carrier and the wafer in a manner so that each of the coupled LED device and a portion of the conductive carrier at least partially fill the opening. A method of fabricating an LED device includes forming a number of openings in a wafer. The method also includes coupling light-emitting diode (LED) devices to conductive carriers. The LED devices with conductive carriers at least partially fill each of the openings.

    摘要翻译: 一种装置包括其中具有多个开口的晶片。 对于每个开口,LED器件以这样的方式耦合到导电载体和晶片,使得每个耦合的LED器件和导电载体的一部分至少部分地填充开口。 制造LED器件的方法包括在晶片中形成多个开口。 该方法还包括将发光二极管(LED)器件耦合到导电载体上。 具有导电载体的LED装置至少部分地填充每个开口。

    Methods of fabricating light emitting diode packages
    2.
    发明授权
    Methods of fabricating light emitting diode packages 有权
    制造发光二极管封装的方法

    公开(公告)号:US08598617B2

    公开(公告)日:2013-12-03

    申请号:US13557272

    申请日:2012-07-25

    IPC分类号: H01L33/00

    摘要: An LED array comprises a growth substrate and at least two separated LED dies grown over the growth substrate. Each of LED dies sequentially comprise a first conductive type doped layer, a multiple quantum well layer and a second conductive type doped layer. The LED array is bonded to a carrier substrate. Each of separated LED dies on the LED array is simultaneously bonded to the carrier substrate. The second conductive type doped layer of each of separated LED dies is proximate to the carrier substrate. The first conductive type doped layer of each of LED dies is exposed. A patterned isolation layer is formed over each of LED dies and the carrier substrate. Conductive interconnects are formed over the patterned isolation layer to electrically connect the at least separated LED dies and each of LED dies to the carrier substrate.

    摘要翻译: LED阵列包括生长衬底和在生长衬底上生长的至少两个分离的LED管芯。 每个LED管芯依次包括第一导电型掺杂层,多量子阱层和第二导电型掺杂层。 LED阵列结合到载体衬底。 LED阵列上的每个分离的LED管芯同时结合到载体衬底。 每个分离的LED管芯的第二导电型掺杂层靠近载体衬底。 每个LED管芯的第一导电型掺杂层被暴露。 在每个LED管芯和载体衬底上形成图案化隔离层。 导电互连形成在图案化的隔离层上,以将至少分离的LED管芯和每个LED管芯电连接到载体衬底。

    Methods of Fabricating Light Emitting Diode Packages
    3.
    发明申请
    Methods of Fabricating Light Emitting Diode Packages 有权
    制造发光二极管封装的方法

    公开(公告)号:US20120286240A1

    公开(公告)日:2012-11-15

    申请号:US13557272

    申请日:2012-07-25

    IPC分类号: H01L33/06

    摘要: An LED array comprises a growth substrate and at least two separated LED dies grown over the growth substrate. Each of LED dies sequentially comprise a first conductive type doped layer, a multiple quantum well layer and a second conductive type doped layer. The LED array is bonded to a carrier substrate. Each of separated LED dies on the LED array is simultaneously bonded to the carrier substrate. The second conductive type doped layer of each of separated LED dies is proximate to the carrier substrate. The first conductive type doped layer of each of LED dies is exposed. A patterned isolation layer is formed over each of LED dies and the carrier substrate. Conductive interconnects are formed over the patterned isolation layer to electrically connect the at least separated LED dies and each of LED dies to the carrier substrate.

    摘要翻译: LED阵列包括生长衬底和在生长衬底上生长的至少两个分离的LED管芯。 每个LED管芯依次包括第一导电型掺杂层,多量子阱层和第二导电型掺杂层。 LED阵列结合到载体衬底。 LED阵列上的每个分离的LED管芯同时结合到载体衬底。 每个分离的LED管芯的第二导电型掺杂层靠近载体衬底。 每个LED管芯的第一导电型掺杂层被暴露。 在每个LED管芯和载体衬底上形成图案化隔离层。 导电互连形成在图案化的隔离层上,以将至少分离的LED管芯和每个LED管芯电连接到载体衬底。

    Methods of fabricating light emitting diode packages
    5.
    发明授权
    Methods of fabricating light emitting diode packages 有权
    制造发光二极管封装的方法

    公开(公告)号:US08241932B1

    公开(公告)日:2012-08-14

    申请号:US13050549

    申请日:2011-03-17

    IPC分类号: H01L21/00

    摘要: An LED array comprises a growth substrate and at least two separated LED dies grown over the growth substrate. Each of LED dies sequentially comprise a first conductive type doped layer, a multiple quantum well layer and a second conductive type doped layer. The LED array is bonded to a carrier substrate. Each of separated LED dies on the LED array is simultaneously bonded to the carrier substrate. The second conductive type doped layer of each of separated LED dies is proximate to the carrier substrate. The first conductive type doped layer of each of LED dies is exposed. A patterned isolation layer is formed over each of LED dies and the carrier substrate. Conductive interconnects are formed over the patterned isolation layer to electrically connect the at least separated LED dies and each of LED dies to the carrier substrate.

    摘要翻译: LED阵列包括生长衬底和在生长衬底上生长的至少两个分离的LED管芯。 每个LED管芯依次包括第一导电型掺杂层,多量子阱层和第二导电型掺杂层。 LED阵列结合到载体衬底。 LED阵列上的每个分离的LED管芯同时结合到载体衬底。 每个分离的LED管芯的第二导电型掺杂层靠近载体衬底。 每个LED管芯的第一导电型掺杂层被暴露。 在每个LED管芯和载体衬底上形成图案化隔离层。 导电互连形成在图案化的隔离层上,以将至少分离的LED管芯和每个LED管芯电连接到载体衬底。