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1.发明申请Fabricating method of semiconductor package and heat-dissipating structure applicable thereto 审中-公开适用于其的半导体封装和散热结构的制造方法公开(公告)号：US20080251910A1
公开(公告)日：2008-10-16
申请号：US12082718
申请日：2008-04-11
CPC分类号： H01L21/56 , H01L23/4334 , H01L2224/73253 , H01L2924/01019 , H01L2924/01079
摘要： A method for fabricating semiconductor packages is disclosed, including mounting and electrically connecting a semiconductor chip onto a chip carrier; mounting a heat-dissipating structure on the semiconductor chip; placing the heat-dissipating structure into a mold cavity for filling therein a packaging material to form an encapsulant, wherein the heat-dissipating structure has a heat spreader having a size larger than that of the predetermined size of the semiconductor package, a covering layer formed on the, and a plurality of protrusions formed on edges of the covering layer that are free from being corresponding in position to the semiconductor chip, such that the protrusions can abut against a top surface of the mold cavity to prevent the heat spreader from being warped; and finally performing a singulation process according to the predetermined size and removing the encapsulant formed on the covering layer to form the desired semiconductor package. Also, this invention discloses a heat-dissipating structure applicable to the method described above.
摘要翻译： 公开了一种用于制造半导体封装的方法，包括将半导体芯片安装并电连接到芯片载体上; 在半导体芯片上安装散热结构; 将散热结构放置在模腔中，用于在其中填充包装材料以形成密封剂，其中散热结构具有尺寸大于半导体封装的预定尺寸的散热器，形成覆盖层 以及在覆盖层的边缘上形成的多个突起，其不与半导体芯片的位置相对应，使得突起可抵靠模腔的顶表面以防止散热器翘曲 ; 最后按照规定的尺寸进行分割处理，除去覆盖层上形成的密封剂，形成所需的半导体封装。 此外，本发明公开了一种适用于上述方法的散热结构。
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公开(公告)号：US20080122070A1
公开(公告)日：2008-05-29
申请号：US11986359
申请日：2007-11-21
IPC分类号： H01L23/373 , H01L21/58
CPC分类号： H01L23/3128 , H01L21/568 , H01L23/4334 , H01L24/16 , H01L2224/16 , H01L2224/73253 , H01L2924/00011 , H01L2924/00014 , H01L2924/01019 , H01L2924/01079 , H01L2924/16152 , H01L2224/0401
摘要： A heat dissipating semiconductor package and a fabrication method therefor are provided. The fabrication method for the heat dissipating semiconductor package mainly includes steps of: containing a substrate having a chip mounted thereon in an aperture of a carrier; mounting a heat dissipating sheet having supporting portions on the carrier with the heat dissipating sheet being attached on the chip; forming an encapsulant to encapsulate the semiconductor chip and the heat dissipating structure; removing a part of the encapsulant above the heat dissipating sheet with a part of the heat dissipating sheet exposed from the encapsulant by lapping; and forming a cover layer on the part of heat dissipating sheet to prevent it from oxidation; and cutting along a predetermined size of the semiconductor package, thereby heat generated from an operation of the chip is dissipated via the heat dissipating structure.
摘要翻译： 提供一种散热半导体封装及其制造方法。 用于散热半导体封装的制造方法主要包括以下步骤：将载置有孔的芯片安装在其上; 将散热板安装在载体上，并将散热板安装在芯片上; 形成密封剂以封装半导体芯片和散热结构; 通过研磨从所述密封剂暴露出的部分所述散热片去除所述散热片上方的所述密封剂的一部分; 在散热片的一部分上形成覆盖层以防止其氧化; 并且沿着预定尺寸的半导体封装进行切割，由此从芯片的操作产生的热量经由散热结构消散。
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公开(公告)号：US20080122071A1
公开(公告)日：2008-05-29
申请号：US11986362
申请日：2007-11-21
IPC分类号： H01L23/373
CPC分类号： H01L23/3128 , H01L21/568 , H01L23/4334 , H01L2224/16225 , H01L2224/16227 , H01L2224/32245 , H01L2224/73253 , H01L2924/15311
摘要： A heat dissipating semiconductor package and the fabrication method therefor are provided. The fabrication method for the heat dissipating semiconductor package mainly includes steps of: containing a substrate having a chip mounted thereon in an aperture of a carrier, wherein the carrier has an electroconductive layer; allowing a heat dissipating structure having supporting portions to be mounted on and electrically connected to the electroconductive layer of the carrier via the supporting portions thereof while heat dissipating structure being mounted on the chip; after an encapsulation process and removing a part of the encapsulant above the heat dissipating sheet by lapping to expose a surface of the heat dissipating structure from the encapsulant, depositing and forming a metal passivation layer on the surface of the heat dissipating structure by electroplating for preventing the heat dissipating structure from oxidizing.
摘要翻译： 提供一种散热半导体封装及其制造方法。 用于散热半导体封装的制造方法主要包括以下步骤：在载体的孔中容纳其上安装有芯片的基板，其中载体具有导电层; 允许散热结构，其具有支撑部分，其安装在载体的导电层上并通过其支撑部分电连接，同时散热结构安装在芯片上; 在封装工艺之后并且通过研磨去除散热片上方的一部分密封剂，以从密封剂暴露出散热结构的表面，在散热结构的表面上沉积和形成金属钝化层，通过电镀防止 散热结构从氧化。
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公开(公告)号：US20150173225A1
公开(公告)日：2015-06-18
申请号：US14108339
申请日：2013-12-17
申请人： Cheng-Chao Peng , Ke-Sheng Huang , Yung-Chih Kuo , Chih-Wei Chang , Wen-Hua Yu , Yu-Yi Wu , Yu-Yuan Lin
发明人： Cheng-Chao Peng , Ke-Sheng Huang , Yung-Chih Kuo , Chih-Wei Chang , Wen-Hua Yu , Yu-Yi Wu , Yu-Yuan Lin
CPC分类号： G06F1/16 , G02F1/133308 , G02F2001/133317 , G02F2001/133322 , G02F2001/133325 , G06F1/1616 , G06F1/1637 , Y10T29/49826
摘要： A display device comprises a cover and a display module. The cover includes a bottom plate and at least one cover limit element. The cover limit element projects inwardly from an inner surface of the bottom of the cover. A space is formed between the bottom plate and the cover limit element. The display module includes a frame with at least one frame limit element disposed at an end of the frame and projecting at a position between the cover limit element and the bottom plate. The frame limit element is configured to be disposed in the space and between the cover limit element and the bottom plate to retain the display module with the cover.
摘要翻译： 显示装置包括盖和显示模块。 盖包括底板和至少一个盖限制元件。 盖限制元件从盖的底部的内表面向内突出。 在底板和盖限位元件之间形成空间。 显示模块包括框架，框架具有至少一个框架限制元件，该框架限定元件设置在框架的端部处，并且在覆盖限制元件和底板之间的位置处突出。 框架限制元件被配置为设置在空间中并且在盖限制元件和底板之间以将盖子保持在显示模块上。
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公开(公告)号：US08541697B2
公开(公告)日：2013-09-24
申请号：US13031710
申请日：2011-02-22
申请人： Chih-Wei Chang
发明人： Chih-Wei Chang
CPC分类号： H04M1/0266
摘要： A dustproof structure is used in an electronic device, which includes a housing and a display panel. The dustproof structure includes a dustproof section and a first adhesive section. The dustproof section is located and received in the housing. The first adhesive section is fixed on the one side of the dustproof section, and the display panel is fixed on the dustproof structure by the first adhesive section and is assembled to the housing. The dustproof structure fills gaps between the housing and the display panel.
摘要翻译： 在电子设备中使用防尘结构，其包括壳体和显示面板。 防尘结构包括防尘部和第一粘合部。 防尘部分定位并接收在外壳中。 第一粘合部固定在防尘部的一侧，显示面板通过第一粘合部固定在防尘结构上，并组装到壳体。 防尘结构填充外壳和显示面板之间的间隙。
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公开(公告)号：US20120092593A1
公开(公告)日：2012-04-19
申请号：US12970967
申请日：2010-12-17
申请人： Chih-Wei Chang , Po-Chun Hsu , Kun-Hung Hsieh
发明人： Chih-Wei Chang , Po-Chun Hsu , Kun-Hung Hsieh
IPC分类号： G02F1/1335 , H05K5/02 , F21V7/22
CPC分类号： G02B6/0085 , G02B6/0088 , G02B6/009
摘要： A frame formed by cutting and bending a plate base is provided. The maximum thickness of the frame is T, the thickness of the plate base is t, and 1.5t≦T≦2.5t. The frame includes a first plate element, a second plate element, and a bending portion. The second plate element is directly contacted to the first plate element, and the first plate element is substantially parallel to the second plate element. The bending portion is connected between the first plate element and the second plate element. A backlight module using the above-mentioned frame and a liquid crystal display (LCD) module using the backlight module are also provided.
摘要翻译： 提供了通过切割和弯曲板底座形成的框架。 框架的最大厚度为T，板底的厚度为t，1.5t＆nlE; T＆nlE; 2.5t。 框架包括第一板元件，第二板元件和弯曲部分。 第二板元件直接接触第一板元件，第一板元件基本上平行于第二板元件。 弯曲部分连接在第一板元件和第二板元件之间。 还提供了使用上述框架的背光模块和使用背光模块的液晶显示器（LCD）模块。
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公开(公告)号：US20110090141A1
公开(公告)日：2011-04-21
申请号：US12684128
申请日：2010-01-08
申请人： Super Liao , Po-Chun Hsu , Chih-Wei Chang
发明人： Super Liao , Po-Chun Hsu , Chih-Wei Chang
IPC分类号： G09G3/36 , G02F1/13357
CPC分类号： G09G3/3426 , G02B6/0046 , G02B6/005 , G02B6/0068 , G02B6/008 , G02B6/0083 , G09G2300/0426 , G09G2320/0233
摘要： A backlight module including a light guide plate, light source sets, and controlling circuits is provided. The light guide plate has a plurality of regions, and each region of the light guide plate has a light incident surface correspondingly. Each light source set is disposed at the light incident surface of one of the regions of the light guide plate, and each light source set has at least one middle light source and at least one edge light source. The middle light source is disposed in a middle region of the light source set and the edge light source is disposed at an edge of the light source set. Each controlling circuit is electrically connected to the middle light source of one of the light source sets, and the edge light source of each light source set is electrically connected to the controlling circuit of the adjacent light source set.
摘要翻译： 提供了包括导光板，光源组和控制电路的背光模块。 导光板具有多个区域，导光板的各个区域相应地具有光入射面。 每个光源组设置在导光板的一个区域的光入射表面处，并且每个光源组具有至少一个中间光源和至少一个边缘光源。 中间光源设置在光源组的中间区域中，并且边缘光源设置在光源组的边缘。 每个控制电路电连接到一个光源组的中间光源，并且每个光源组的边缘光源电连接到相邻光源组的控制电路。
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公开(公告)号：US07405151B2
公开(公告)日：2008-07-29
申请号：US11420900
申请日：2006-05-30
申请人： Gin Jei Wang , Chao-Hsien Peng , Chii-Ming Wu , Chih-Wei Chang , Shau-Lin Shue
发明人： Gin Jei Wang , Chao-Hsien Peng , Chii-Ming Wu , Chih-Wei Chang , Shau-Lin Shue
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/02129 , H01L21/022 , H01L21/0228 , H01L21/28562 , H01L21/31625 , H01L23/482 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a semiconductor device is described. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN barrier is conformably formed in the opening, at a thickness less than 20 Å. A copper layer is formed over the atomic layer deposited (ALD) TaN barrier to fill the opening.
摘要翻译： 对半导体装置的形成方法进行说明。 在第一电介质层中形成开口，暴露晶体管的有源区，并且在开口中以厚度小于等于一致地形成原子层沉积（ALD）TaN势垒。 在原子层沉积（ALD）TaN势垒上形成铜层以填充开口。
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公开(公告)号：US20080121929A1
公开(公告)日：2008-05-29
申请号：US11523683
申请日：2006-09-19
申请人： Jerry Lai , Chii-Ming Wu , Chih-Wei Chang , Shau-Lin Shue
发明人： Jerry Lai , Chii-Ming Wu , Chih-Wei Chang , Shau-Lin Shue
IPC分类号： H01L29/78
CPC分类号： H01L29/66636 , H01L21/26506 , H01L21/2652 , H01L29/165 , H01L29/665 , H01L29/6656 , H01L29/66621 , H01L29/7848 , Y10S438/933
摘要： A semiconductor structure includes a first silicon-containing layer comprising an element selected from the group consisting essentially of carbon and germanium wherein the silicon-containing layer has a first atomic percentage of the element to the element and silicon, a second silicon-containing layer comprising the element over the first silicon-containing layer, and a silicide layer on the second silicon-containing layer. The element in the second silicon-containing layer has a second atomic percentage of the element to the element and silicon, wherein the second atomic percentage is substantially lower than the first atomic percentage.
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公开(公告)号：US20070284703A1
公开(公告)日：2007-12-13
申请号：US11447989
申请日：2006-06-07
申请人： Kuo-Liang Wu , Kuo-Shu Iu , Chih-Wei Chang
发明人： Kuo-Liang Wu , Kuo-Shu Iu , Chih-Wei Chang
IPC分类号： H01L23/495
CPC分类号： H01L23/49524 , H01L24/37 , H01L24/40 , H01L24/84 , H01L2224/37011 , H01L2224/40247 , H01L2224/40249 , H01L2224/84385 , H01L2924/00014 , H01L2924/01057 , H01L2924/01082 , H01L2924/014 , H01L2224/37099
摘要： A semiconductor package structure includes a substrate, a chip module, a lead frame, and a bridging element. The chip module is electrically connected to the substrate. The lead frame is disposed beside one side of the substrate, and the lead frame has a projecting block unit. The bridging element has one side electrically connected with the chip module, and a first positioning unit formed on the other side thereof for electrically retaining with the projecting block unit. Moreover, the semiconductor package structure of the present invention is applied to a design of multi-chip package, and ensures that a bridging element is connected with a chip via the bridging element being retained by a lead frame. In addition, the junction between the bridging element and the lead frame do not cause displacement between the lead frame and the bridging element during the packaging process.
摘要翻译： 半导体封装结构包括衬底，芯片模块，引线框架和桥接元件。 芯片模块电连接到基板。 引线框架设置在基板的一侧旁边，引线框架具有突出块单元。 桥接元件具有与芯片模块电连接的一侧，以及形成在其另一侧上用于与突出块单元电保持的第一定位单元。 此外，本发明的半导体封装结构应用于多芯片封装的设计，并且确保桥接元件通过由引线框架保持的桥接元件与芯片连接。 此外，在包装过程中，桥接元件和引线框架之间的连接点不会引起引线框架和桥接元件之间的位移。
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