公开(公告)号：US20110291259A9

公开(公告)日：2011-12-01

申请号：US12182145

申请日：2008-07-30

申请人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

发明人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

IPC分类号： H01L23/488

CPC分类号： H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/02166 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05018 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05093 ,  H01L2224/05552 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00012

摘要： In accordance with the objectives of the invention a new method is provided for the creation of metal bumps over surfaces of I/O pads. Contact pads are provided over the surface of a layer of dielectric. The aluminum of the I/O pads, which have been used as I/O pads during wafer level semiconductor device testing, is completely or partially removed over a surface area that is smaller than the surface area of the contact pad using methods of metal dry etching or wet etching. The contact pad can be accessed either by interconnect metal created in a plane of the contact pad or by via that are provided through the layer of dielectric over which the contact pad has been deposited. The process can be further extended by the deposition, patterning and etching of a layer of polyimide over the layer of passivation that serves to protect the contact pad.

摘要翻译： 根据本发明的目的，提供了一种在I / O焊盘的表面上形成金属凸块的新方法。 接触垫设置在电介质层的表面上。 在晶片级半导体器件测试期间用作I / O焊盘的I / O焊盘的铝在使用金属干燥的方法的表面积小于接触焊盘的表面积的情况下被完全或部分地去除 蚀刻或湿蚀刻。 接触焊盘可以通过在接触焊盘的平面中产生的互连金属或通过已经沉积接触焊盘的电介质层提供的通孔来访问。 通过在用于保护接触焊盘的钝化层上的聚酰亚胺层的沉积，图案化和蚀刻可以进一步扩展该工艺。

公开(公告)号：US20050070085A1

公开(公告)日：2005-03-31

申请号：US10962964

申请日：2004-10-12

申请人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

发明人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L21/44 ,  G01R31/02 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/02166 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05018 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05093 ,  H01L2224/05552 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00012

摘要： In accordance with the objectives of the invention a new method is provided for the creation of metal bumps over surfaces of I/O pads. Contact pads are provided over the surface of a layer of dielectric. The aluminum of the I/O pads, which have been used as I/O pads during wafer level semiconductor device testing, is completely or partially removed over a surface area that is smaller than the surface area of the contact pad using methods of metal dry etching or wet etching. The contact pad can be accessed either by interconnect metal created in a plane of the contact pad or by via that are provided through the layer of dielectric over which the contact pad has been deposited. The process can be further extended by the deposition, patterning and etching of a layer of polyimide over the layer of passivation that serves to protect the contact pad.

摘要翻译： 根据本发明的目的，提供了一种在I / O焊盘的表面上形成金属凸块的新方法。 接触垫设置在电介质层的表面上。 在晶片级半导体器件测试期间用作I / O焊盘的I / O焊盘的铝在使用金属干燥的方法的表面积小于接触焊盘的表面积的情况下被完全或部分去除 蚀刻或湿蚀刻。 接触焊盘可以通过在接触焊盘的平面中产生的互连金属或通过已经沉积接触焊盘的电介质层提供的通孔来访问。 通过在用于保护接触焊盘的钝化层上的聚酰亚胺层的沉积，图案化和蚀刻可以进一步扩展该工艺。

公开(公告)号：US08901733B2

公开(公告)日：2014-12-02

申请号：US12182145

申请日：2008-07-30

申请人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

发明人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/02166 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05018 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05093 ,  H01L2224/05552 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00012

摘要： In accordance with the objectives of the invention a new method is provided for the creation of metal bumps over surfaces of I/O pads. Contact pads are provided over the surface of a layer of dielectric. The aluminum of the I/O pads, which have been used as I/O pads during wafer level semiconductor device testing, is completely or partially removed over a surface area that is smaller than the surface area of the contact pad using methods of metal dry etching or wet etching. The contact pad can be accessed either by interconnect metal created in a plane of the contact pad or by via that are provided through the layer of dielectric over which the contact pad has been deposited. The process can be further extended by the deposition, patterning and etching of a layer of polyimide over the layer of passivation that serves to protect the contact pad.

摘要翻译： 根据本发明的目的，提供了一种在I / O焊盘的表面上形成金属凸块的新方法。 接触垫设置在电介质层的表面上。 在晶片级半导体器件测试期间用作I / O焊盘的I / O焊盘的铝在使用金属干燥的方法的表面积小于接触焊盘的表面积的情况下被完全或部分去除 蚀刻或湿蚀刻。 接触焊盘可以通过在接触焊盘的平面中产生的互连金属或通过已经沉积接触焊盘的电介质层提供的通孔来访问。 通过在用于保护接触焊盘的钝化层上的聚酰亚胺层的沉积，图案化和蚀刻可以进一步扩展该工艺。

公开(公告)号：US20080284016A1

公开(公告)日：2008-11-20

申请号：US12182145

申请日：2008-07-30

申请人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

发明人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

IPC分类号： H01L23/488

CPC分类号： H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/02166 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05018 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05093 ,  H01L2224/05552 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00012

摘要： In accordance with the objectives of the invention a new method is provided for the creation of metal bumps over surfaces of I/O pads. Contact pads are provided over the surface of a layer of dielectric. The aluminum of the I/O pads, which have been used as I/O pads during wafer level semiconductor device testing, is completely or partially removed over a surface area that is smaller than the surface area of the contact pad using methods of metal dry etching or wet etching. The contact pad can be accessed either by interconnect metal created in a plane of the contact pad or by via that are provided through the layer of dielectric over which the contact pad has been deposited. The process can be further extended by the deposition, patterning and etching of a layer of polyimide over the layer of passivation that serves to protect the contact pad.

公开(公告)号：US06815324B2

公开(公告)日：2004-11-09

申请号：US09783384

申请日：2001-02-15

申请人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

发明人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

IPC分类号： H01L2144

CPC分类号： H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/02166 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05018 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05093 ,  H01L2224/05552 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00012

摘要： In accordance with the objectives of the invention a new method is provided for the creation of metal bumps over surfaces of I/O pads. Contact pads are provided over the surface of a layer of dielectric. The aluminum of the I/O pads, which have been used as I/O pads during wafer level semiconductor device testing, is completely or partially removed over a surface area that is smaller than the surface area of the contact pad using methods of metal dry etching or wet etching. The contact pad can be accessed either by interconnect metal created in a plane of the contact pad or by via that are provided through the layer of dielectric over which the contact pad has been deposited. The process can be further extended by the deposition, patterning and etching of a layer of polyimide over the layer of passivation that serves to protect the contact pad.

公开(公告)号：US07465653B2

公开(公告)日：2008-12-16

申请号：US10962964

申请日：2004-10-12

申请人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

发明人： Ching-Cheng Huang ,  Chuen-Jye Lin ,  Ming-Ta Lei ,  Mou-Shiung Lin

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/02166 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05018 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05093 ,  H01L2224/05552 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00012

摘要： In accordance with the objectives of the invention a new method is provided for the creation of metal bumps over surfaces of I/O pads. Contact pads are provided over the surface of a layer of dielectric. The aluminum of the I/O pads, which have been used as I/O pads during wafer level semiconductor device testing, is completely or partially removed over a surface area that is smaller than the surface area of the contact pad using methods of metal dry etching or wet etching. The contact pad can be accessed either by interconnect metal created in a plane of the contact pad or by via that are provided through the layer of dielectric over which the contact pad has been deposited. The process can be further extended by the deposition, patterning and etching of a layer of polyimide over the layer of passivation that serves to protect the contact pad.

摘要翻译： 根据本发明的目的，提供了一种在I / O焊盘的表面上形成金属凸块的新方法。 接触垫设置在电介质层的表面上。 在晶片级半导体器件测试期间用作I / O焊盘的I / O焊盘的铝在使用金属干燥的方法的表面积小于接触焊盘的表面积的情况下被完全或部分地去除 蚀刻或湿蚀刻。 接触焊盘可以通过在接触焊盘的平面中产生的互连金属或通过已经沉积接触焊盘的电介质层提供的通孔来访问。 通过在用于保护接触焊盘的钝化层上的聚酰亚胺层的沉积，图案化和蚀刻可以进一步扩展该工艺。

公开(公告)号：US20090267213A1

公开(公告)日：2009-10-29

申请号：US12384977

申请日：2009-04-09

申请人： Mou-Shiung Lin ,  Ming-Ta Lei ,  Chuen-Jye Lin

发明人： Mou-Shiung Lin ,  Ming-Ta Lei ,  Chuen-Jye Lin

IPC分类号： H01L23/488 ,  H01L23/18

CPC分类号： H01L23/49816 ,  H01L24/06 ,  H01L24/12 ,  H01L24/16 ,  H01L24/17 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05572 ,  H01L2224/06136 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A new method and package is provided for the mounting of semiconductor devices that have been provided with small-pitch Input/Output interconnect bumps. Fine pitch solder bumps, consisting of pillar metal and a solder bump, are applied directly to the I/O pads of the semiconductor device, the device is then flip-chip bonded to a substrate. Dummy bumps may be provided for cases where the I/O pads of the device are arranged such that additional mechanical support for the device is required.

摘要翻译： 提供了一种新的方法和封装，用于安装已经提供有小间距输入/输出互连凸块的半导体器件。 由柱状金属和焊料凸点组成的细间距焊料凸块直接施加到半导体器件的I / O焊盘，然后将器件倒装芯片接合到基板上。 可以为设备的I / O焊盘布置以便需要对器件的附加机械支撑的情况下提供虚拟凸块。

公开(公告)号：US08158508B2

公开(公告)日：2012-04-17

申请号：US11981125

申请日：2007-10-31

申请人： Mou-Shiung Lin ,  Ming-Ta Lei ,  Chuen-Jye Lin

发明人： Mou-Shiung Lin ,  Ming-Ta Lei ,  Chuen-Jye Lin

IPC分类号： H01L21/44

CPC分类号： H01L23/49816 ,  H01L24/06 ,  H01L24/12 ,  H01L24/16 ,  H01L24/17 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05572 ,  H01L2224/06136 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A new method and package is provided for the mounting of semiconductor devices that have been provided with small-pitch Input/Output interconnect bumps. Fine pitch solder bumps, consisting of pillar metal and a solder bump, are applied directly to the I/O pads of the semiconductor device, the device is then flip-chip bonded to a substrate. Dummy bumps may be provided for cases where the I/O pads of the device are arranged such that additional mechanical support for the device is required.

摘要翻译： 提供了一种新的方法和封装，用于安装已经提供有小间距输入/输出互连凸块的半导体器件。 由柱状金属和焊料凸点组成的细间距焊料凸块直接施加到半导体器件的I / O焊盘，然后将器件倒装芯片接合到基板上。 可以为设备的I / O焊盘布置以便需要对器件的附加机械支撑的情况下提供虚拟凸块。

公开(公告)号：US07902679B2

公开(公告)日：2011-03-08

申请号：US11981138

申请日：2007-10-31

申请人： Mou-Shiung Lin ,  Ming-Ta Lei ,  Chuen-Jye Lin

发明人： Mou-Shiung Lin ,  Ming-Ta Lei ,  Chuen-Jye Lin

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/49816 ,  H01L24/06 ,  H01L24/12 ,  H01L24/16 ,  H01L24/17 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05572 ,  H01L2224/06136 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A new method and package is provided for the mounting of semiconductor devices that have been provided with small-pitch Input/Output interconnect bumps. Fine pitch solder bumps, consisting of pillar metal and a solder bump, are applied directly to the I/O pads of the semiconductor device, the device is then flip-chip bonded to a substrate. Dummy bumps may be provided for cases where the I/O pads of the device are arranged such that additional mechanical support for the device is required.

摘要翻译： 提供了一种新的方法和封装，用于安装已经提供有小间距输入/输出互连凸块的半导体器件。 由柱状金属和焊料凸点组成的细间距焊料凸块直接施加到半导体器件的I / O焊盘，然后将器件倒装芯片接合到基板上。 可以为设备的I / O焊盘布置以便需要对器件的附加机械支撑的情况下提供虚拟凸块。

公开(公告)号：US20110024905A1

公开(公告)日：2011-02-03

申请号：US12852467

申请日：2010-08-07

申请人： Mou-Shiung Lin ,  Ming-Ta Lei ,  Chuen-Jye Lin

发明人： Mou-Shiung Lin ,  Ming-Ta Lei ,  Chuen-Jye Lin

IPC分类号： H01L23/498

CPC分类号： H01L23/49816 ,  H01L24/06 ,  H01L24/12 ,  H01L24/16 ,  H01L24/17 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05572 ,  H01L2224/06136 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A new method and package is provided for the mounting of semiconductor devices that have been provided with small-pitch Input/Output interconnect bumps. Fine pitch solder bumps, consisting of pillar metal and a solder bump, are applied directly to the I/O pads of the semiconductor device, the device is then flip-chip bonded to a substrate. Dummy bumps may be provided for cases where the I/O pads of the device are arranged such that additional mechanical support for the device is required.

摘要翻译： 提供了一种新的方法和封装，用于安装已经提供有小间距输入/输出互连凸块的半导体器件。 由柱状金属和焊料凸点组成的细间距焊料凸块直接施加到半导体器件的I / O焊盘，然后将器件倒装芯片接合到基板上。 可以为设备的I / O焊盘布置以便需要对器件的附加机械支撑的情况下提供虚拟凸块。