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1.发明申请公开(公告)号：US20070232026A1
公开(公告)日：2007-10-04
申请号：US11726354
申请日：2007-03-21
申请人： Chris Apanius , Robert Shick , Hendra Ng , Andrew Bell , Wei Zhang , Phil Neal
发明人： Chris Apanius , Robert Shick , Hendra Ng , Andrew Bell , Wei Zhang , Phil Neal
IPC分类号： H01L21/00
CPC分类号： H01L24/29 , C08F32/00 , C08G64/0208 , C09D145/00 , H01L24/13 , H01L24/73 , H01L24/81 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2224/05568 , H01L2224/05573 , H01L2224/131 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/274 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/29298 , H01L2224/32145 , H01L2224/32225 , H01L2224/33181 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73103 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/81191 , H01L2224/81903 , H01L2224/83191 , H01L2224/83193 , H01L2224/83203 , H01L2224/838 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06575 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01033 , H01L2924/01041 , H01L2924/01047 , H01L2924/01051 , H01L2924/01055 , H01L2924/01058 , H01L2924/01073 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/12041 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/19042 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/05599
摘要： Materials, and methods that use such materials, that are useful for forming chip stacks, chip and wafer bonding and wafer thinning are disclosed. Such methods and materials provide strong bonds while also being readily removed with little or no residues.
摘要翻译： 公开了使用这种材料的材料和方法，其可用于形成芯片堆叠，芯片和晶片接合以及晶片薄化。 这样的方法和材料提供强的键，同时也很少或没有残留物容易地除去。
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2.发明申请公开(公告)号：US20080073741A1
公开(公告)日：2008-03-27
申请号：US11903190
申请日：2007-09-20
申请人： Chris Apanius , Robert Shick , Hendra Ng , Andrew Bell , Wei Zhang , Phil Neal
发明人： Chris Apanius , Robert Shick , Hendra Ng , Andrew Bell , Wei Zhang , Phil Neal
IPC分类号： H01L31/0203 , C08F10/00
CPC分类号： H01L24/83 , H01L21/82 , H01L25/50 , H01L27/14618 , H01L27/14683 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/8303 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06575 , H01L2924/00014 , H01L2924/01019 , H01L2924/01025 , H01L2924/01055 , H01L2924/07802 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Materials, and methods that use such materials, that are useful for forming chip stacks, chip and wafer bonding and wafer thinning are disclosed. Such methods and materials provide strong bonds while also being readily removed with little or no residues.
摘要翻译： 公开了使用这种材料的材料和方法，其可用于形成芯片堆叠，芯片和晶片接合以及晶片薄化。 这样的方法和材料提供强的键，同时也很少或没有残留物容易地除去。
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3.发明授权公开(公告)号：US07932161B2
公开(公告)日：2011-04-26
申请号：US11726354
申请日：2007-03-21
申请人： Chris Apanius , Robert A. Shick , Hendra Ng , Andrew Bell , Wei Zhang , Phil Neal
发明人： Chris Apanius , Robert A. Shick , Hendra Ng , Andrew Bell , Wei Zhang , Phil Neal
CPC分类号： H01L24/29 , C08F32/00 , C08G64/0208 , C09D145/00 , H01L24/13 , H01L24/73 , H01L24/81 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2224/05568 , H01L2224/05573 , H01L2224/131 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/274 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/29298 , H01L2224/32145 , H01L2224/32225 , H01L2224/33181 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73103 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/81191 , H01L2224/81903 , H01L2224/83191 , H01L2224/83193 , H01L2224/83203 , H01L2224/838 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06575 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01033 , H01L2924/01041 , H01L2924/01047 , H01L2924/01051 , H01L2924/01055 , H01L2924/01058 , H01L2924/01073 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/12041 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/19042 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/05599
摘要： Materials, and methods that use such materials, that are useful for forming chip stacks, chip and wafer bonding and wafer thinning are disclosed. Such methods and materials provide strong bonds while also being readily removed with little or no residues.
摘要翻译： 公开了使用这种材料的材料和方法，其可用于形成芯片堆叠，芯片和晶片接合以及晶片薄化。 这样的方法和材料提供强的键，同时也很少或没有残留物容易地除去。
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4.发明授权公开(公告)号：US08816485B2
公开(公告)日：2014-08-26
申请号：US13352424
申请日：2012-01-18
申请人： Chris Apanius , Robert A. Shick , Hendra Ng , Andrew Bell , Wei Zhang , Phil Neal
发明人： Chris Apanius , Robert A. Shick , Hendra Ng , Andrew Bell , Wei Zhang , Phil Neal
IPC分类号： H01L23/10 , H01L25/00 , H01L27/146
CPC分类号： H01L24/83 , H01L21/82 , H01L25/50 , H01L27/14618 , H01L27/14683 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/8303 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06575 , H01L2924/00014 , H01L2924/01019 , H01L2924/01025 , H01L2924/01055 , H01L2924/07802 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Materials, and methods that use such materials, that are useful for forming chip stacks, chip and wafer bonding and wafer thinning are disclosed. Such methods and materials provide strong bonds while also being readily removed with little or no residues.
摘要翻译： 公开了使用这种材料的材料和方法，其可用于形成芯片堆叠，芯片和晶片接合以及晶片薄化。 这样的方法和材料提供强的键，同时也很少或没有残留物容易地除去。
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5.发明申请公开(公告)号：US20120175721A1
公开(公告)日：2012-07-12
申请号：US13352424
申请日：2012-01-18
申请人： Chris Apanius , Robert A. Shick , Hendra Ng , Andrew Bell , Wei Zhang , Phil Neal
发明人： Chris Apanius , Robert A. Shick , Hendra Ng , Andrew Bell , Wei Zhang , Phil Neal
IPC分类号： H01L31/0203
CPC分类号： H01L24/83 , H01L21/82 , H01L25/50 , H01L27/14618 , H01L27/14683 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/8303 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06575 , H01L2924/00014 , H01L2924/01019 , H01L2924/01025 , H01L2924/01055 , H01L2924/07802 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Materials, and methods that use such materials, that are useful for forming chip stacks, chip and wafer bonding and wafer thinning are disclosed. Such methods and materials provide strong bonds while also being readily removed with little or no residues.
摘要翻译： 公开了使用这种材料的材料和方法，其可用于形成芯片堆叠，芯片和晶片接合以及晶片薄化。 这样的方法和材料提供强的键，同时也很少或没有残留物容易地除去。
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6.发明授权公开(公告)号：US08120168B2
公开(公告)日：2012-02-21
申请号：US11903190
申请日：2007-09-20
申请人： Chris Apanius , Robert A. Shick , Hendra Ng , Andrew Bell , Wei Zhang , Phil Neal
发明人： Chris Apanius , Robert A. Shick , Hendra Ng , Andrew Bell , Wei Zhang , Phil Neal
IPC分类号： H01L23/10
CPC分类号： H01L24/83 , H01L21/82 , H01L25/50 , H01L27/14618 , H01L27/14683 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/8303 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06575 , H01L2924/00014 , H01L2924/01019 , H01L2924/01025 , H01L2924/01055 , H01L2924/07802 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Materials, and methods that use such materials, that are useful for forming chip stacks, chip and wafer bonding and wafer thinning are disclosed. Such methods and materials provide strong bonds while also being readily removed with little or no residues.
摘要翻译： 公开了使用这种材料的材料和方法，其可用于形成芯片堆叠，芯片和晶片接合以及晶片薄化。 这样的方法和材料提供强的键，同时也很少或没有残留物容易地除去。
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