公开(公告)号：US6037273A

公开(公告)日：2000-03-14

申请号：US33391

申请日：1998-03-02

申请人： Christian M. Gronet ,  Peter A. Knoot ,  Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Satheesh Kuppurao

发明人： Christian M. Gronet ,  Peter A. Knoot ,  Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Satheesh Kuppurao

IPC分类号： C01B13/32 ,  H01L21/316 ,  H01L21/02

CPC分类号： H01L21/02238 ,  C01B13/322 ,  H01L21/02255 ,  H01L21/3165 ,  H01L21/31662

摘要： A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.

公开(公告)号：US6159866A

公开(公告)日：2000-12-12

申请号：US507946

申请日：2000-02-22

申请人： Christian M. Gronet ,  Peter A. Knoot ,  Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Satheesh Kuppurao

发明人： Christian M. Gronet ,  Peter A. Knoot ,  Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Satheesh Kuppurao

IPC分类号： C01B13/32 ,  H01L21/316 ,  H01L21/31

CPC分类号： C01B13/322 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/3165 ,  H01L21/31662

摘要： A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.

摘要翻译： 在基板上形成氧化物的方法。 根据本发明的方法，将基板放置在室中。 然后将含氧气体和含氢气体进料到室中。 然后使含氧气体和含氢气体彼此反应以在室中形成水蒸气。 然后水蒸汽氧化底物。

公开(公告)号：US06410456B1

公开(公告)日：2002-06-25

申请号：US09718443

申请日：2000-11-21

申请人： Christian M. Gronet ,  Peter A. Knoot ,  Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Satheesh Kuppurao

发明人： Christian M. Gronet ,  Peter A. Knoot ,  Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Satheesh Kuppurao

IPC分类号： C23C16455

CPC分类号： C01B13/322 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/3165 ,  H01L21/31662

摘要： A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.

公开(公告)号：US6114258A

公开(公告)日：2000-09-05

申请号：US175144

申请日：1998-10-19

申请人： Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Sathees Kuppurao

发明人： Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Sathees Kuppurao

IPC分类号： H01L21/31 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/8238 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/469

CPC分类号： H01L21/28185 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/0223 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31662 ,  H01L29/518 ,  H01L29/513

摘要： A system and method of forming an oxide in the presence of a nitrogen-containing material. A substrate having a nitrogen-containing material on a surface is placed in a reaction chamber. An oxygen-containing gas, or an oxygen-containing gas and a hydrogen-containing gas are provided to the chamber and reacted in the chamber. The reactive gases are used to oxidize the surface of the substrate and displace the nitrogen-containing material from the interface.

摘要翻译： 在含氮材料存在下形成氧化物的体系和方法。 在表面上具有含氮材料的基板放置在反应室中。 将含氧气体或含氧气体和含氢气体设置到室中并在室中反应。 反应气体用于氧化基材的表面，并从界面置换含氮材料。

公开(公告)号：US5848842A

公开(公告)日：1998-12-15

申请号：US650744

申请日：1996-05-20

申请人： Bruce W. Peuse ,  Gary E. Miner ,  Mark Yam

发明人： Bruce W. Peuse ,  Gary E. Miner ,  Mark Yam

IPC分类号： H01L21/205 ,  G01J5/00 ,  G01J5/02 ,  G01J5/04 ,  H01L21/26 ,  H01L21/31 ,  H01L21/324 ,  G01K15/00

CPC分类号： H01L21/67109 ,  G01J5/0003 ,  G01J5/041 ,  Y10S977/918

摘要： A method of calibrating a temperature measurement system including the steps of heating a first substrate having a high emissivity value to a first process temperature; while the first substrate is at the first process temperature, calibrating a first probe and a second probe to produce temperature indications from the first substrate that are substantially the same, the first probe having associated therewith a first effective reflectivity and the second probe having associated therewith a second effective reflectivity, the first and second effective reflectivities being different; heating a second substrate having a low emissivity value to a second process temperature, the low emissivity value being lower than the high emissivity value; with the second substrate at the second process temperature, using both the first probe and the second probe to measure the temperature of the second substrate, the first probe producing a first temperature indication and the second probe producing a second temperature indication different from the first temperature indication; measuring a sensitivity of the temperature indication produced by the first probe to changes in substrate emissivity; and by using the measured sensitivity and the first and second temperature indications, computing a correction factor for the first probe, the correction factor to be applied to subsequent temperature readings of the first probe to produce corrected temperature readings.

摘要翻译： 一种校准温度测量系统的方法，包括以下步骤：将具有高发射率值的第一衬底加热至第一工艺温度; 而第一衬底处于第一工艺温度时，校准第一探针和第二探针，以从第一衬底产生基本上相同的温度指示，第一探针与其相关联地具有第一有效反射率，而第二探针具有与之相关联 第二有效反射率，第一和第二有效反射率不同; 将具有低发射率值的第二基板加热到第二处理温度，低发射率值低于高发射率值; 其中所述第二衬底处于第二工艺温度，使用所述第一探针和所述第二探针两者来测量所述第二衬底的温度，所述第一探针产生第一温度指示，所述第二探针产生不同于所述第一温度的第二温度指示 适应症 测量由第一探针产生的温度指示对基板发射率的变化的灵敏度; 并且通过使用测量的灵敏度和第一和第二温度指示，计算第一探针的校正因子，将要应用于第一探针的后续温度读数的校正因子以产生校正的温度读数。

公开(公告)号：US5755511A

公开(公告)日：1998-05-26

申请号：US641477

申请日：1996-05-01

申请人： Bruce W. Peuse ,  Gary E. Miner ,  Mark Yam

发明人： Bruce W. Peuse ,  Gary E. Miner ,  Mark Yam

IPC分类号： G01J5/02 ,  G01J5/00 ,  G01J5/04 ,  G01J5/08 ,  G01J5/10 ,  G01J5/58 ,  H01L21/205 ,  H01L21/26 ,  H01L21/31 ,  H01L21/324 ,  H01L21/66 ,  G01K15/00

CPC分类号： G01J5/041 ,  G01J5/0003 ,  H01L21/67109

摘要： A method of correcting a temperature probe reading in a thermal processing chamber for heating a substrate, including the steps of heating the substrate to a process temperature; using a first, a second and a third probe to measure the temperature of the substrate, the first and third probes having a first effective reflectivity and the second probe having a second effective reflectivity, the first probe producing a first temperature indication, the second probe producing a second temperature indication and the third probe producing a third temperature indication, and wherein the first and second effective reflectivities are different; and from the first and second temperature indications, deriving a corrected temperature reading for the first probe, wherein the corrected temperature reading is a more accurate indicator of an actual temperature of the substrate than an uncorrected readings produced by both the first and second probes. Thereafter, deriving a corrected temperature reading for the third probe by adjusting the temperature correction calculated for the first probe according to the measured emissivity sensitivity associated with the environment of the third probe to provide a corrected temperature reading that is a more accurate indicator of an actual temperature of the substrate in the environment of the third probe. An apparatus for carrying out the method is also disclosed.

摘要翻译： 一种校正用于加热衬底的热处理室中的温度探针读数的方法，包括以下步骤：将衬底加热至处理温度; 使用第一，第二和第三探针来测量衬底的温度，所述第一和第三探针具有第一有效反射率，所述第二探针具有第二有效反射率，所述第一探针产生第一温度指示，所述第二探针 产生第二温度指示，所述第三探测器产生第三温度指示，并且其中所述第一和第二有效反射率是不同的; 并且从第一和第二温度指示，导出用于第一探针的校正温度读数，其中校正温度读数是比由第一和第二探针产生的未校正读数更准确地指示衬底的实际温度。 此后，通过根据与第三探针的环境相关联的测量的发射率灵敏度调节针对第一探针计算的温度校正，得出校正的温度读数，以提供校正温度读数，该校正温度读数是实际的更准确的指标 在第三探针的环境中的衬底的温度。 还公开了一种用于执行该方法的装置。

公开(公告)号：US07658973B2

公开(公告)日：2010-02-09

申请号：US10772893

申请日：2004-02-04

申请人： Pravin K. Narwankar ,  Gary E. Miner ,  Arnaud Lepert

发明人： Pravin K. Narwankar ,  Gary E. Miner ,  Arnaud Lepert

IPC分类号： B05D3/02 ,  C23C16/00 ,  B05D1/40 ,  B05D3/12 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28185 ,  H01L21/3105 ,  H01L21/3144 ,  H01L29/518 ,  H01L29/66181

摘要： A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.

摘要翻译： 一种形成包括氮的电介质膜的方法。 该方法包括使用氮化气体和快速热退火工艺将氮合并到电介质膜中，其中使用等于或小于约10Torr的超低压用于快速热退火工艺。

公开(公告)号：US06179466B2

公开(公告)日：2001-01-30

申请号：US09044217

申请日：1998-03-18

申请人： Bruce W. Peuse ,  Gary E. Miner ,  Mark Yam ,  Aaron Hunter ,  Peter Knoot ,  Jason Mershon

发明人： Bruce W. Peuse ,  Gary E. Miner ,  Mark Yam ,  Aaron Hunter ,  Peter Knoot ,  Jason Mershon

IPC分类号： G01J500

CPC分类号： G01J5/08 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/0815 ,  G01J5/0818 ,  G01J5/0821 ,  G01J5/0846 ,  G01J5/0887 ,  G01J5/522 ,  G01J2005/0048 ,  G01J2005/068 ,  H01L22/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of correcting a temperature probe reading in a thermal processing chamber for heating a substrate, including the steps of heating the substrate to a process temperature and using a first, a second and a third probe to measure the temperature of the substrate. The first probe has a first effective reflectivity and the second probe has a second effective reflectivity. The first probe produces a first temperature indication, the second probe produces a second temperature indication and the third probe produces a third temperature indication. The first and second effective reflectivities may be different. From the first and second temperature indications, a corrected temperature reading for the first probe may be derived, wherein the corrected temperature reading is a more accurate indicator of an actual temperature of the substrate than an uncorrected readings produced by both the first and second probes. A corrected temperature reading for the third probe may be derived by adjusting the temperature correction calculated for the first probe according to the measured emissivity sensitivity associated with the environment of the third probe to provide a corrected temperature reading that is a more accurate indicator of an actual temperature of the substrate in the environment of the third probe. An apparatus for carrying out the method is also disclosed.

摘要翻译： 一种校正用于加热衬底的热处理室中的温度探针读数的方法，包括以下步骤：将衬底加热到​​工艺温度，并使用第一，第二和第三探针测量衬底的温度。 第一探针具有第一有效反射率，第二探针具有第二有效反射率。 第一探针产生第一温度指示，第二探针产生第二温度指示，第三探头产生第三温度指示。 第一和第二有效的反射率可能不同。 从第一和第二温度指示可以导出用于第一探针的校正温度读数，其中校正温度读数是比由第一和第二探针产生的未校正读数更准确地指示衬底的实际温度。 可以通过根据与第三探针的环境相关联的测量的发射率灵敏度来调整针对第一探针计算的温度校正值来提供校正温度读数，校正温度读数是实际的更精确的指示符 在第三探针的环境中的衬底的温度。 还公开了一种用于执行该方法的装置。

公开(公告)号：US5660472A

公开(公告)日：1997-08-26

申请号：US359302

申请日：1994-12-19

申请人： Bruce W. Peuse ,  Gary E. Miner ,  Mark Yam

发明人： Bruce W. Peuse ,  Gary E. Miner ,  Mark Yam

IPC分类号： H01L21/205 ,  G01J5/00 ,  G01J5/02 ,  G01J5/04 ,  H01L21/26 ,  H01L21/31 ,  H01L21/324 ,  G01J5/06

CPC分类号： H01L21/67109 ,  G01J5/0003 ,  G01J5/041 ,  Y10S977/918

摘要： A method of correcting a temperature probe reading in a thermal processing chamber for heating a substrate, including the steps of heating the substrate to a process temperature; using a first probe and a second probe to measure the temperature of the substrate, the first probe having a first effective reflectivity and the second chamber having a second effective reflectivity, the first probe producing a first temperature indication and the second probe producing a second temperature indication, and wherein the first and second effective reflectivities are different; and from the first and second temperature indications, deriving a corrected temperature reading for the first probe, wherein the corrected temperature reading is a more accurate indicator of an actual temperature of the substrate than are uncorrected readings produced by both the first and second probes.

摘要翻译： 一种校正用于加热衬底的热处理室中的温度探针读数的方法，包括以下步骤：将衬底加热至处理温度; 使用第一探针和第二探针来测量衬底的温度，第一探针具有第一有效反射率，第二腔具有第二有效反射率，第一探针产生第一温度指示，第二探针产生第二温度 指示，并且其中第一和第二有效反射率不同; 并且从第一和第二温度指示，导出第一探针的校正温度读数，其中校正温度读数是比第一和第二探针产生的未校正读数更准确地指示衬底的实际温度。

公开(公告)号：US20100090294A1

公开(公告)日：2010-04-15

申请号：US12641064

申请日：2009-12-17

申请人： Pravin K. Narwankar ,  Gary E. Miner ,  Arnaud Lepert

发明人： Pravin K. Narwankar ,  Gary E. Miner ,  Arnaud Lepert

IPC分类号： H01L29/78 ,  B32B5/00 ,  C04B35/14 ,  C04B35/597

CPC分类号： H01L21/02332 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/28185 ,  H01L21/3105 ,  H01L21/3144 ,  H01L29/518 ,  H01L29/66181

摘要： A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.

摘要翻译： 一种形成包括氮的电介质膜的方法。 该方法包括使用氮化气体和快速热退火工艺将氮合并到电介质膜中，其中使用等于或小于约10Torr的超低压用于快速热退火工艺。