公开(公告)号：US07227244B2

公开(公告)日：2007-06-05

申请号：US10924551

申请日：2004-08-24

申请人： Claes H. Bjorkman ,  Melissa Min Yu ,  Hongquing Shan ,  David W. Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Gazala Chapra ,  Gerald Yin ,  Farhad K. Moghadam ,  Judy H. Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

发明人： Claes H. Bjorkman ,  Melissa Min Yu ,  Hongquing Shan ,  David W. Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Gazala Chapra ,  Gerald Yin ,  Farhad K. Moghadam ,  Judy H. Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

IPC分类号： H01L23/58

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3121 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829

摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

摘要翻译： 沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。 电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。 具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。 用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

公开(公告)号：US06858153B2

公开(公告)日：2005-02-22

申请号：US10011368

申请日：2001-11-05

申请人： Claes H. Bjorkman ,  Min Melissa Yu ,  Hongquing Shan ,  David W. Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Gazala Chapra ,  Gerald Yin ,  Farhad K. Moghadam ,  Judy H. Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

发明人： Claes H. Bjorkman ,  Min Melissa Yu ,  Hongquing Shan ,  David W. Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Gazala Chapra ,  Gerald Yin ,  Farhad K. Moghadam ,  Judy H. Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

IPC分类号： H01L21/302 ,  A01C15/02 ,  A01C17/00 ,  C23C16/40 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  C23F1/00

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3121 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829

摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

摘要翻译： 沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。 电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。 具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。 用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

公开(公告)号：US06669858B2

公开(公告)日：2003-12-30

申请号：US10011369

申请日：2001-11-05

申请人： Claes H. Bjorkman ,  Min Melissa Yu ,  Hongquing Shan ,  David W. Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Gazala Chapra ,  Gerald Yin ,  Farhad K. Moghadam ,  Judy H. Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

发明人： Claes H. Bjorkman ,  Min Melissa Yu ,  Hongquing Shan ,  David W. Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Gazala Chapra ,  Gerald Yin ,  Farhad K. Moghadam ,  Judy H. Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

IPC分类号： B44C122

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3121 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829

摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

公开(公告)号：US06340435B1

公开(公告)日：2002-01-22

申请号：US09329012

申请日：1999-06-09

申请人： Claes H. Bjorkman ,  Min Melissa Yu ,  Hongquing Shan ,  David W. Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Gazala Chapra ,  Gerald Yin ,  Farhad K. Moghadam ,  Judy H. Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

发明人： Claes H. Bjorkman ,  Min Melissa Yu ,  Hongquing Shan ,  David W. Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Gazala Chapra ,  Gerald Yin ,  Farhad K. Moghadam ,  Judy H. Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

IPC分类号： C23F100

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3121 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829

摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

摘要翻译： 沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。 电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。 具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。 用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

公开(公告)号：US07070657B1

公开(公告)日：2006-07-04

申请号：US09418818

申请日：1999-10-15

申请人： David Cheung ,  Joe Feng ,  Judy H. Huang ,  Wai-Fan Yau

发明人： David Cheung ,  Joe Feng ,  Judy H. Huang ,  Wai-Fan Yau

IPC分类号： C23C16/52 ,  C23F1/00 ,  H01L21/306

CPC分类号： G03F7/091

摘要： This invention provides a stable process for depositing an antireflective layer. Helium gas is used to lower the deposition rate of plasma-enhanced silane oxide, silane oxynitride, and silane nitride processes. Helium is also used to stabilize the process, so that different films can be deposited. The invention also provides conditions under which process parameters can be controlled to produce antireflective layers with varying optimum refractive index, absorptive index, and thickness for obtaining the desired optical behavior.

摘要翻译： 本发明提供一种用于沉积抗反射层的稳定方法。 氦气用于降低等离子体增强硅烷氧化物，硅氮氧化物和氮化硅工艺的沉积速率。 氦也用于稳定工艺，使得可以沉积不同的膜。 本发明还提供了可以控制工艺参数以产生具有变化的最佳折射率，吸收指数和厚度以获得所需光学行为的抗反射层的条件。

公开(公告)号：US06209484B1

公开(公告)日：2001-04-03

申请号：US09551021

申请日：2000-04-17

申请人： Judy H. Huang ,  Wai-Fan Yau ,  David Cheung ,  Chan-Lon Yang

发明人： Judy H. Huang ,  Wai-Fan Yau ,  David Cheung ,  Chan-Lon Yang

IPC分类号： C23C1600

CPC分类号： C23C16/308 ,  C23C16/345 ,  C23C16/52 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76829

摘要： A method and apparatus for depositing an etch stop layer. The method begins by introducing process gases into a processing chamber in which a substrate is disposed. An etch stop layer is then deposited over the substrate. An overlying layer is then deposited over the etch stop layer. The etch stop layer substantially protects underlying materials from the etchants used in patterning the overlying layer. Moreover, the etch stop layer also possesses advantageous optical characteristics, making it suitable for use as an antireflective coating in the patterning of layers underlying the etch stop layer.

摘要翻译： 一种沉积蚀刻停止层的方法和装置。 该方法开始于将工艺气体引入其中设置衬底的处理室中。 然后在衬底上沉积蚀刻停止层。 然后将上覆层沉积在蚀刻停止层上。 蚀刻停止层基本上保护用于图案化上覆层的蚀刻剂的下层材料。 此外，蚀刻停止层还具有有利的光学特性，使其适合用作在蚀刻停止层下面的图案图案中的抗反射涂层。

公开(公告)号：US6083852A

公开(公告)日：2000-07-04

申请号：US852786

申请日：1997-05-07

申请人： David Cheung ,  Joe Feng ,  Madhu Deshpande ,  Wai-Fan Yau ,  Judy H. Huang

发明人： David Cheung ,  Joe Feng ,  Madhu Deshpande ,  Wai-Fan Yau ,  Judy H. Huang

IPC分类号： H01L21/31 ,  C23C16/30 ,  C23C16/34 ,  C23C16/52 ,  H01L21/027 ,  H01L21/469

CPC分类号： C23C16/308 ,  C23C16/345 ,  C23C16/52

摘要： This invention provides a stable process for depositing films which include silicon and nitrogen, such as antireflective coatings of silicon oxynitride. Nitrogen is employed to permit lower flow rates of the process gas containing silicon, thereby reducing the deposition rate and providing better control of film thickness. Additionally, the use of nitrogen stabilizes the process, improving film uniformity, and provides a higher-quality film. The invention is capable of providing more accurate and easier fabrication of structures requiring uniformly thin films containing silicon, nitrogen, and, optionally, oxygen, such as antireflective coatings.

摘要翻译： 本发明提供一种用于沉积包括硅和氮的膜的稳定方法，例如氮氧化硅的抗反射涂层。 使用氮气以允许含硅工艺气体的较低流速，从而降低沉积速率并提供更好的膜厚度控制。 另外，氮的使用可以稳定工艺，提高膜的均匀性，并提供更高质量的膜。 本发明能够提供更精确和更容易地制造需要均匀的含有硅，氮和任选的氧的薄膜如薄膜的结构，例如抗反射涂层。

公开(公告)号：US06562544B1

公开(公告)日：2003-05-13

申请号：US08743628

申请日：1996-11-04

申请人： David Cheung ,  Joe Feng ,  Judy H. Huang ,  Wai-Fan Yau

发明人： David Cheung ,  Joe Feng ,  Judy H. Huang ,  Wai-Fan Yau

IPC分类号： G03F700

CPC分类号： H01L21/3081 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/0332 ,  Y10S430/151 ,  Y10S438/902

摘要： This invention provides a method and apparatus for depositing a silicon oxide film over an antireflective layer to reduce footing experienced in the a subsequently applied photoresist layer without substantially altering the optical qualities of the antireflective layer. The invention thereby provides more accurate etching of underlying layers during patterning operations. The invention is also capable of providing more accurate patterning of thin films by reducing inaccuracies caused by excessive etching of photoresist during patterning. Additionally, the film of the present invention may be patterned and used as a mask in the patterning of underlying layers.

摘要翻译： 本发明提供了一种用于在抗反射层上沉积氧化硅膜的方法和装置，以减少随后施加的光致抗蚀剂层中的基础，而基本上不改变抗反射层的光学质量。 因此，本发明在图案化操作期间提供对底层的更精确的蚀刻。 本发明还能够通过减少在图案化期间过度蚀刻光致抗蚀剂所引起的不精确度来提供更精确的薄膜图案化。 此外，本发明的膜可以被图案化并用作下层的图案化中的掩模。

公开(公告)号：US06324439B1

公开(公告)日：2001-11-27

申请号：US09573499

申请日：2000-05-16

申请人： David Cheung ,  Joe Feng ,  Madhu Deshpande ,  Wai-Fan Yau ,  Judy H. Huang

发明人： David Cheung ,  Joe Feng ,  Madhu Deshpande ,  Wai-Fan Yau ,  Judy H. Huang

IPC分类号： G06F1900

CPC分类号： C23C16/308 ,  C23C16/345 ,  C23C16/52

摘要： This invention provides a stable process for depositing films which include silicon and nitrogen, such as antireflective coatings of silicon oxynitride. Nitrogen is employed to permit lower flow rates of the process gas containing silicon, thereby reducing the deposition rate and providing better control of film thickness. Additionally, the use of nitrogen stabilizes the process, improving film uniformity, and provides a higher-quality film. The invention is capable of providing more accurate and easier fabrication of structures requiring uniformly thin films containing silicon, nitrogen, and, optionally, oxygen, such as antireflective coatings.

摘要翻译： 本发明提供一种用于沉积包括硅和氮的膜的稳定方法，例如氮氧化硅的抗反射涂层。 使用氮气以允许含硅工艺气体的较低流速，从而降低沉积速率并提供更好的膜厚度控制。 另外，氮的使用可以稳定工艺，提高膜的均匀性，并提供更高质量的膜。 本发明能够提供更精确和更容易地制造需要均匀的含有硅，氮和任选的氧的薄膜如薄膜的结构，例如抗反射涂层。

公开(公告)号：US6156149A

公开(公告)日：2000-12-05

申请号：US852788

申请日：1997-05-07

申请人： David Cheung ,  Judy H. Huang ,  Wai-Fan Yau

发明人： David Cheung ,  Judy H. Huang ,  Wai-Fan Yau

IPC分类号： H01L21/31 ,  C23C16/52 ,  H01L21/027 ,  H01L21/768 ,  B32B31/00

CPC分类号： C23C16/52 ,  H01L21/0276 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829

摘要： This invention provides a method and apparatus for depositing a two-layer structure, including an antireflective coating and a dielectric layer, without any intervening process steps, such as a cleaning step. The invention is capable of providing more accurate and easier fabrication of structures by reducing inaccuracies caused by the reflection and refraction of incident radiant energy within a photoresist layer used in the patterning of the dielectric layer. Additionally, the antireflective coating of the present invention may also serve as an etch stop layer during the patterning of a layer formed over the antireflective coating.

摘要翻译： 本发明提供了一种用于沉积包括抗反射涂层和电介质层的双层结构的方法和装置，而没有任何中间工艺步骤，例如清洁步骤。 本发明能够通过减少由在电介质层的图形化中使用的光致抗蚀剂层内的入射辐射能的反射和折射引起的不精确度来提供更准确和更容易的结构制造。 此外，本发明的抗反射涂层还可以在形成在抗反射涂层上形成的层的图案化中用作蚀刻停止层。