METHODS FOR LASER PROCESSING TRANSPARENT WORKPIECES USING PULSED LASER BEAM FOCAL LINES AND VAPOR ETCHING

    公开(公告)号:US20200254557A1

    公开(公告)日:2020-08-13

    申请号:US16776055

    申请日:2020-01-29

    Abstract: A method for processing a transparent workpiece includes directing a pulsed laser beam into the transparent workpiece such that a portion of the pulsed laser beam directed into the transparent workpiece generates an induced absorption within the transparent workpiece, thereby forming a damage line within the transparent workpiece, and the portion of the pulsed laser beam directed into the transparent workpiece includes a wavelength λ, a spot size w0, and a Rayleigh range ZR that is greater than F D  π  w 0 2 λ , where FD is a dimensionless divergence factor comprising a value of 10 or greater. Further, the method for processing the transparent workpiece includes etching the transparent workpiece with an etching vapor to remove at least a portion of the transparent workpiece along the damage line, thereby forming an aperture extending through the at least a portion of the thickness of the transparent workpiece.

    METHODS FOR LASER PROCESSING A SUBSTRATE STACK HAVING ONE OR MORE TRANSPARENT WORKPIECES AND A BLACK MATRIX LAYER

    公开(公告)号:US20190389007A1

    公开(公告)日:2019-12-26

    申请号:US16430985

    申请日:2019-06-04

    Abstract: A method for laser processing a substrate stack includes forming a defect in a transparent workpiece of the substrate stack having a black matrix layer. Forming the defect includes directing a portion of a pulsed laser beam into the transparent workpiece. The pulsed laser beam includes a wavelength λ, a spot size wo, and a Rayleigh range ZR that is greater than F D  π   w 0 , 2 λ , where FD is a dimensionless divergence factor comprising a value of 10 or greater. The pulsed laser beam directed into the transparent workpiece of the substrate stack forms a pulsed laser beam focal line disposed within the transparent workpiece, where a center of the pulsed laser beam focal line is offset from an edge of the black matrix layer by a distance that is about 20% or less of a total thickness of the substrate stack and generates an induced absorption within the transparent workpiece.

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