公开(公告)号：US10086494B2

公开(公告)日：2018-10-02

申请号：US15264056

申请日：2016-09-13

Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc. ,  Dow Global Technologies LLC

Inventor： Jonathan G. Weis ,  George C. Jacob ,  Bhawesh Kumar ,  Sarah E. Mastroianni ,  Wenjun Xu ,  Nan-Rong Chiou ,  Mohammad T. Islam

IPC: B24B37/24 ,  B24D11/00 ,  B24B37/22 ,  B24B53/017

Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.

公开(公告)号：US20180071888A1

公开(公告)日：2018-03-15

申请号：US15264056

申请日：2016-09-13

Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc. ,  Dow Global Technologies LLC

Inventor： Jonathan G. Weis ,  George C. Jacob ,  Bhawesh Kumar ,  Sarah E. Mastroianni ,  Wenjun Xu ,  Nan-Rong Chiou ,  Mohammad T. Islam

IPC: B24B37/24 ,  B24B53/017

CPC classification number: B24B37/245 ,  B24B37/22 ,  B24B37/24 ,  B24B53/017 ,  B24D11/00

Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.

公开(公告)号：US20150307710A1

公开(公告)日：2015-10-29

申请号：US14649600

申请日：2012-12-12

Applicant: DOW GLOBAL TECHNOLOGIES LLC

Inventor： Michael J. Mullins ,  Chao Zhang ,  Jia wen Xiong ,  Hongyu Chen ,  Michael D. Read ,  Nan-Rong Chiou

IPC: C08L83/06 ,  C08G77/00

CPC classification number: C08L83/06 ,  C08F8/30 ,  C08F8/42 ,  C08F212/08 ,  C08F222/08 ,  C08G59/4007 ,  C08G59/4085 ,  C08G59/42 ,  C08G77/80 ,  C08L2312/08 ,  C08F222/06 ,  C08F2222/408

Abstract: Embodiments of the present disclosure include a hardener compound for curing with an epoxy resin, where the hardener compound includes a copolymer having a first constitutional unit of the formula (I), a second constitutional unit of the formula (II), and a third constitutional unit of the formula (III), where each q, n and m is independently a positive integer; each b is independently selected from the group of 6, 8, 10 and 12; each Y is independently an organic group; and each R is independently selected from the group of a hydrogen, an organic group and a halogen. Embodiments of the present disclosure include an epoxy system that includes the hardener compound and an epoxy resin.

Abstract translation: 本公开的实施方案包括用于用环氧树脂固化的固化剂化合物，其中所述固化剂化合物包括具有式（I）的第一结构单元的共聚物，式（II）的第二结构单元和第三结构式 式（III）的单元，其中每个q，n和m独立地为正整数; 每个b独立地选自6,8,10和12组; 每个Y独立地是有机基团; 并且每个R独立地选自氢，有机基团和卤素。 本公开的实施方案包括包含固化剂化合物和环氧树脂的环氧体系。

公开(公告)号：US20150252149A1

公开(公告)日：2015-09-10

申请号：US14427803

申请日：2013-09-19

Applicant: Chunming ZHANG ,  Nanrong CHIOU ,  Sayeed ABBAS ,  Xiao Hua QIU ,  Michael D. READ ,  Aaron W. SANDERS ,  DOW GLOBAL TECHNOLOGIES LLC

Inventor： Chunming Zhang ,  Nan-Rong Chiou ,  Sayeed Abbas ,  XiaoHua S. Qiu ,  Michael D, Read ,  Aaron W. Sanders

IPC: C08J3/18

CPC classification number: C08J3/18 ,  C08F8/12 ,  C08F8/32 ,  C08F8/34 ,  C08F8/44 ,  C08F8/50 ,  C08F120/56 ,  C08F2810/10 ,  C08J2333/26 ,  F01D25/24 ,  Y10T29/49826

Abstract: The present invention provides processes for making higher molecular weight, functionalized poly(meth)acrylamide polymer products. As an overview, the processes use (trans)amidation techniques in the melt phase to react one or more high molecular weight amide functional polymers or copolymers with at least one co-reactive species comprising at least one labile amine moiety and at least one additional functionality other than amine functionality. In practical effect, the processes of the present invention thus incorporate one or more additional functionalities onto an already formed or partially formed polymer rather than trying to incorporate all functionality via copolymerization techniques as the polymer is formed from constituent monomers. The methods provide an easy way to provide functionalized, high molecular weight poly(meth)acrylamide polymer products.

Abstract translation: 本发明提供了制备较高分子量的官能化聚（甲基）丙烯酰胺聚合物产物的方法。 作为概述，该方法在熔融相中使用（反式）酰胺化技术使一种或多种高分子量酰胺官能聚合物或共聚物与至少一种包含至少一个不稳定胺部分的共反应物质和至少一种附加官能团 除了胺官能团。 实际上，本发明的方法因此在已经形成的或部分形成的聚合物上引入了一种或多种另外的官能团，而不是通过共聚技术将聚合物从组成单体形成，从而引入所有的官能团。 这些方法提供了提供功能化的高分子量聚（甲基）丙烯酰胺聚合物产物的简单方法。

公开(公告)号：US10207388B2

公开(公告)日：2019-02-19

申请号：US15491610

申请日：2017-04-19

Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc. ,  Dow Global Technologies LLC

Inventor： Nan-Rong Chiou ,  Mohammad T. Islam ,  George C. Jacob

IPC: B24B37/24 ,  B24B37/20 ,  H01L21/306 ,  H01L21/66 ,  B24B37/013

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine, all weight percent's based on the total solids weight of the reaction mixture.

公开(公告)号：US20180345448A1

公开(公告)日：2018-12-06

申请号：US15615254

申请日：2017-06-06

Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc. ,  Dow Global Technologies LLC

Inventor： Jonathan G. Weis ,  Nan-Rong Chiou ,  George C. Jacob ,  Bainian Qian

IPC: B24B37/24 ,  B24B37/04 ,  B24B37/22

CPC classification number: B24B37/24 ,  B24B37/042 ,  B24B37/22

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4′-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4′-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 60 to 90, a shear storage modulus (G′) at 65° C. of from 125 to 500 MPa, and a damping component (G″/G′ measured by shear dynamic mechanical analysis (DMA), ASTM D5279-08 (2008)) at 50° C. of from 0.06 to 0.13.

公开(公告)号：US20180304438A1

公开(公告)日：2018-10-25

申请号：US15491610

申请日：2017-04-19

Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc. ,  Dow Global Technologies LLC

Inventor： Nan-Rong Chiou ,  Mohammad T. Islam ,  George C. Jacob

IPC: B24B37/20 ,  B24B37/24 ,  H01L21/306 ,  H01L21/66

CPC classification number: B24B37/205 ,  B24B37/013 ,  B24B37/24 ,  H01L21/30625 ,  H01L22/26

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine, all weight percent's based on the total solids weight of the reaction mixture.

公开(公告)号：US10391606B2

公开(公告)日：2019-08-27

申请号：US15615254

申请日：2017-06-06

Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc. ,  Dow Global Technologies LLC

Inventor： Jonathan G. Weis ,  Nan-Rong Chiou ,  George C. Jacob ,  Bainian Qian

IPC: B24B37/24 ,  B24B37/04 ,  B24B37/22

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4′-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4′-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 60 to 90, a shear storage modulus (G′) at 65° C. of from 125 to 500 MPa, and a damping component (G″/G′ measured by shear dynamic mechanical analysis (DMA), ASTM D5279-08 (2008)) at 50° C. of from 0.06 to 0.13.