-
1.发明授权Method of improving initiation layer for low-k dielectric film by digital liquid flow meter 有权通过数字液体流量计改善低k电介质膜起始层的方法公开(公告)号：US07947611B2
公开(公告)日：2011-05-24
申请号：US12170248
申请日：2008-07-09
申请人： Dustin W. Ho , Juan Carlos Rocha-Alvarez , Alexandros T. Demos , Kelvin Chan , Nagarajan Rajagopalan , Visweswaren Sivaramakrishnan
发明人： Dustin W. Ho , Juan Carlos Rocha-Alvarez , Alexandros T. Demos , Kelvin Chan , Nagarajan Rajagopalan , Visweswaren Sivaramakrishnan
IPC分类号： H01L21/31
CPC分类号： H01L21/31695 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/02348 , H01L21/02351
摘要： A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.
摘要翻译： 一种通过使氧化气体流入处理室来沉积低介电常数膜的方法，使有机硅化合物从大容量储存容器通过数字液体流量计以有机硅流速流动到汽化喷射阀，汽化有机硅化合物和 使有机硅化合物和载气流入处理室，保持有机硅流速沉积起始层，使致孔剂化合物从大容量储存容器通过数字液体流量计以致孔剂流速流动到蒸发喷射阀， 蒸发致孔剂化合物并使致孔剂化合物和载气流入处理室，同时沉积过渡层而增加有机硅流速和致孔剂流速，并保持第二有机硅流速和第二致孔剂流速以沉积 含致孔剂的有机硅酸盐介电层。
-
2.发明授权Method of improving initiation layer for low-k dielectric film by digital liquid flow meter 有权通过数字液体流量计改善低k电介质膜起始层的方法公开(公告)号：US07410916B2
公开(公告)日：2008-08-12
申请号：US11562021
申请日：2006-11-21
申请人： Dustin W. Ho , Juan Carlos Rocha-Alvarez , Alexandros T. Demos , Kelvin Chan , Nagarajan Rajagopalan , Visweswaren Sivaramakrishnan
发明人： Dustin W. Ho , Juan Carlos Rocha-Alvarez , Alexandros T. Demos , Kelvin Chan , Nagarajan Rajagopalan , Visweswaren Sivaramakrishnan
IPC分类号： H01L21/31
CPC分类号： H01L21/31695 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/02348 , H01L21/02351
摘要： A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.
摘要翻译： 一种通过使氧化气体流入处理室来沉积低介电常数膜的方法，使有机硅化合物从大容量储存容器通过数字液体流量计以有机硅流速流动到汽化喷射阀，汽化有机硅化合物和 使有机硅化合物和载气流入处理室，保持有机硅流速沉积起始层，使致孔剂化合物从大容量储存容器通过数字液体流量计以致孔剂流速流动到蒸发喷射阀， 蒸发致孔剂化合物并使致孔剂化合物和载气流入处理室，同时沉积过渡层而增加有机硅流速和致孔剂流速，并保持第二有机硅流速和第二致孔剂流速以沉积 含致孔剂的有机硅酸盐介电层。
-
3.发明申请公开(公告)号：US20080280457A1
公开(公告)日：2008-11-13
申请号：US12170248
申请日：2008-07-09
申请人： Dustin W. Ho , Juan Carlos Rocha-Alvarez , Alexandros T. Demos , Kelvin Chan , Nagarajan Rajagopalan , Visweswaren Sivaramakrishnan
发明人： Dustin W. Ho , Juan Carlos Rocha-Alvarez , Alexandros T. Demos , Kelvin Chan , Nagarajan Rajagopalan , Visweswaren Sivaramakrishnan
IPC分类号： H01L21/31
CPC分类号： H01L21/31695 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/02348 , H01L21/02351
摘要： A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.
-
4.发明申请METHOD OF IMPROVING INITIATION LAYER FOR LOW-K DIELECTRIC FILM BY DIGITAL LIQUID FLOW METER 有权通过数字液体流量计改善低K电介质膜的起始层的方法公开(公告)号：US20080119058A1
公开(公告)日：2008-05-22
申请号：US11562021
申请日：2006-11-21
申请人： DUSTIN W. HO , Juan Carlos Rocha-Alvarez , Alexandros T. Demos , Kelvin Chan , Nagarajan Rajagopalan , Visweswaren Sivaramakrishnan
发明人： DUSTIN W. HO , Juan Carlos Rocha-Alvarez , Alexandros T. Demos , Kelvin Chan , Nagarajan Rajagopalan , Visweswaren Sivaramakrishnan
IPC分类号： H01L21/312
CPC分类号： H01L21/31695 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/02348 , H01L21/02351
摘要： A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.
摘要翻译： 一种通过使氧化气体流入处理室来沉积低介电常数膜的方法，使有机硅化合物从大容量储存容器通过数字液体流量计以有机硅流速流动到汽化喷射阀，汽化有机硅化合物和 使有机硅化合物和载气流入处理室，保持有机硅流速沉积起始层，使致孔剂化合物从大容量储存容器通过数字液体流量计以致孔剂流速流动到蒸发喷射阀， 蒸发致孔剂化合物并使致孔剂化合物和载气流入处理室，同时沉积过渡层而增加有机硅流速和致孔剂流速，并保持第二有机硅流速和第二致孔剂流速以沉积 含致孔剂的有机硅酸盐介电层。
-
公开(公告)号：US08911553B2
公开(公告)日：2014-12-16
申请号：US13248656
申请日：2011-09-29
IPC分类号： C23C16/455 , C23C16/48 , C23C16/56 , H01L21/67 , C23C16/44 , H01L21/677
CPC分类号： C23C16/56 , C23C16/4405 , C23C16/45565 , C23C16/482 , H01L21/6719 , H01L21/67742 , Y10T137/0391
摘要： Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region.
摘要翻译： 本发明的实施例通常提供用于控制处理室内的气流分布的装置和方法。 在一个实施例中，处理工具包括限定处理区域的紫外线处理室，衬底支撑件，设置在UV辐射源和衬底支撑件之间的窗口，以及布置在窗口和衬底支撑件之间的处理区域内的透明花洒 并且在上下处理区域之间具有一个或多个透明花洒通道。 处理工具还包括气体分配环，气体分配环具有在气体分配环内部通道和上部加工区域之间的一个或多个气体分配环通道和位于气体分配环下方的气体出口环，气体出口环具有一个或多个气体 气体出口环内的气体出口环内部通道和下部加工区域之间的出口通道。
-
6.发明申请公开(公告)号：US20130177706A1
公开(公告)日：2013-07-11
申请号：US13719047
申请日：2012-12-18
IPC分类号： B05D3/06
CPC分类号： B05D3/066 , C23C16/4404 , C23C16/4405
摘要： Methods for depositing a carbon-based seasoning layer on exposed surfaces of the optical components within a UV processing chamber are disclosed. In one embodiment, the method includes flowing a carbon-containing precursor radially inwardly across exposed surfaces of optical components within the thermal processing chamber from a circumference of the optical components, exposing the carbon-containing precursor to a thermal radiation emitted from a heating source to form a carbon-based seasoning layer on the exposed surfaces of the optical components, exposing the carbon-based seasoning layer to ozone, wherein the ozone is introduced into the processing chamber by flowing the ozone radially inwardly across exposed surfaces of optical components from the circumference of the optical components, heating the optical components to a temperature of about 400° C. or above while flowing the ozone to remove the carbon-based seasoning layer from exposed surfaces of the optical components.
摘要翻译： 公开了在UV处理室内的光学部件的暴露表面上沉积碳基调味剂层的方法。 在一个实施例中，该方法包括使含碳前驱体从光学部件的圆周径向向内流过热处理室内的光学部件的暴露表面，将含碳前体暴露于从加热源发射的热辐射至 在光学部件的暴露表面上形成碳基调味剂层，将碳基调味剂层暴露于臭氧，其中臭氧通过径向向内流过来自圆周的光学部件的暴露表面而将臭氧引入处理室 的光学部件，将光学部件加热至约400℃以上的温度，同时使臭氧流动，以从光学部件的露出表面除去碳基调味剂层。
-
7.发明申请公开(公告)号：US20120132618A1
公开(公告)日：2012-05-31
申请号：US13301558
申请日：2011-11-21
CPC分类号： G02B5/22 , G02B5/208 , H01L21/67115
摘要： A method and apparatus for providing a uniform UV radiation irradiance profile across a surface of a substrate is provided. In one embodiment, a substrate processing tool includes a processing chamber defining a processing region, a substrate support for supporting a substrate within the processing region, an ultraviolet (UV) radiation source spaced apart from the substrate support and configured to transmit ultraviolet radiation toward the substrate positioned on the substrate support, and a light transmissive window positioned between the UV radiation source and the substrate support, the light transmissive window having an optical film layer coated thereon. In one example, the optical film layer has a non-uniform thickness profile in a radial direction, wherein a thickness of the optical film layer at the peripheral area of the light transmissive window is relatively thicker than at the center region of the optical film layer.
摘要翻译： 提供了一种用于在衬底的表面上提供均匀的UV辐射辐照度分布的方法和装置。 在一个实施例中，衬底处理工具包括限定处理区域的处理室，用于支撑处理区域内的衬底的衬底支撑件，与衬底支撑件间隔开并且被配置成向衬底支撑件发射紫外线辐射的紫外线（UV）辐射源 位于基板支撑件上的基板和位于UV辐射源和基板支撑件之间的透光窗口，透光窗口具有涂覆在其上的光学膜层。 在一个示例中，光学膜层在径向上具有不均匀的厚度分布，其中在透光窗的周边区域处的光学膜层的厚度比在光学膜层的中心区域处的厚度更厚 。
-
公开(公告)号：US07777197B2
公开(公告)日：2010-08-17
申请号：US11425974
申请日：2006-06-22
申请人： Amir Al-Bayati , Lester A. D'Cruz , Alexandros T. Demos , Dale R. Dubois , Khaled A. Elsheref , Naoyuki Iwasaki , Hichem M'Saad , Juan Carlos Rocha-Alvarez , Ashish Shah , Takashi Shimizu
发明人： Amir Al-Bayati , Lester A. D'Cruz , Alexandros T. Demos , Dale R. Dubois , Khaled A. Elsheref , Naoyuki Iwasaki , Hichem M'Saad , Juan Carlos Rocha-Alvarez , Ashish Shah , Takashi Shimizu
IPC分类号： G01N23/00
CPC分类号： H01J37/317 , B23K15/00 , C23F4/00 , H01J37/026 , H01J37/20 , H01J2237/004 , H01J2237/0044 , H01J2237/2001 , H01J2237/304 , H01J2237/3156 , H01J2237/316 , H01J2237/3165 , H01L21/67115
摘要： Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.
摘要翻译： 提供了用于基板的电子束处理的方法和装置。 提供了一种电子束装置，其包括真空室，至少一个与真空室连通的热电偶组件，与真空室连通的加热装置及其组合。 在一个实施例中，真空室包括电子源，其中电子源包括连接到高电压源的阴极，连接到低电压源的阳极和衬底支撑件。 在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。 在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。 在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。
-
9.发明授权Pulse method of oxidizing sidewall dielectrics for high capacitance applications 失效用于高电容应用的氧化侧壁电介质的脉冲方法公开(公告)号：US08664061B2
公开(公告)日：2014-03-04
申请号：US13011946
申请日：2011-01-24
IPC分类号： H01L21/28 , H01L21/8242
CPC分类号： H01L28/40 , H01L21/3105 , H01L28/90
摘要： The present invention provides systems, methods and apparatus for manufacturing a memory cell. The invention includes forming a feature having sidewalls in a first dielectric material; forming a first conductive material on the sidewalls of the feature; depositing a layer of a second dielectric material on the conductive material; and exposing the second dielectric material to oxidizing species and ultraviolet light to oxidize the second dielectric material. Numerous additional aspects are disclosed.
摘要翻译： 本发明提供用于制造存储单元的系统，方法和装置。 本发明包括在第一介电材料中形成具有侧壁的特征; 在所述特征的侧壁上形成第一导电材料; 在导电材料上沉积第二介电材料层; 以及将所述第二电介质材料暴露于氧化物质和紫外光以氧化所述第二电介质材料。 公开了许多附加方面。
-
公开(公告)号：US20120090691A1
公开(公告)日：2012-04-19
申请号：US13248656
申请日：2011-09-29
CPC分类号： C23C16/56 , C23C16/4405 , C23C16/45565 , C23C16/482 , H01L21/6719 , H01L21/67742 , Y10T137/0391
摘要： Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region.
摘要翻译： 本发明的实施例通常提供用于控制处理室内的气流分布的装置和方法。 在一个实施例中，处理工具包括限定处理区域的紫外线处理室，衬底支撑件，设置在UV辐射源和衬底支撑件之间的窗口，以及布置在窗口和衬底支撑件之间的处理区域内的透明花洒 并且在上下处理区域之间具有一个或多个透明花洒通道。 处理工具还包括气体分配环，气体分配环具有在气体分配环内部通道和上部加工区域之间的一个或多个气体分配环通道和位于气体分配环下方的气体出口环，气体出口环具有一个或多个气体 气体出口环内的气体出口环内部通道和下部加工区域之间的出口通道。
-
-
-
-
-
-
-
-
-
搜索结果
78 条记录 (耗时 0.035 秒)
