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    Mixed frequency high temperature nitride CVD process
    3.
    发明授权
    Mixed frequency high temperature nitride CVD process 有权
    混频高温氮化CVD工艺

    公开(公告)号：US06664202B2

    公开(公告)日：2003-12-16

    申请号：US10126495

    申请日：2002-04-18

    Applicant: Sum-Yee Tang ,  May Yuxiang Wang ,  Lester A. D'Cruz

    Inventor： Sum-Yee Tang ,  May Yuxiang Wang ,  Lester A. D'Cruz

    IPC: H01L2131

    CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/505 ,  H01L21/02274 ,  H01L21/3185

    Abstract: A mixed-frequency, high temperature PECVD process is utilized to create a high quality silicon nitride layer having highly conformal properties. Deposition in an ammonia rich ambient at high temperature reduces microloading between dense and isolated features by improving surface mobility of precursors. High quality nitride films formed by the instant process are particularly suited for front-end applications such as the formation of spacer structures and the formation of contact etch stop layers.

    Abstract translation: 利用混合频率，高温PECVD工艺来生产具有高保形特性的高品质氮化硅层。 在高温下在富含氨水的环境中沉积通过提高前体的表面流动性降低致密和孤立特征之间的微载荷。 通过本工艺形成的高质量氮化物膜特别适用于前端应用，例如间隔结构的形成和接触蚀刻停止层的形成。

    Techniques promoting adhesion of porous low K film to underlying barrier layer
    5.
    发明授权
    Techniques promoting adhesion of porous low K film to underlying barrier layer 有权
    促进多孔低K膜粘附到底层阻挡层的技术

    公开(公告)号：US07547643B2

    公开(公告)日：2009-06-16

    申请号：US11046090

    申请日：2005-01-28

    Applicant: Francimar Schmitt ,  Alexandros T. Demos ,  Derek R. Witty ,  Hichem M'Sadd ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Khaled A. Elsheref ,  Zhenjiang Cui

    Inventor： Francimar Schmitt ,  Alexandros T. Demos ,  Derek R. Witty ,  Hichem M'Sadd ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Khaled A. Elsheref ,  Zhenjiang Cui

    IPC: H01L21/31 ,  H01L21/469

    CPC classification number: H01L21/31633 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76832 ,  H01L2221/1047

    Abstract: Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition. In still another approach, parameters of ebeam treatment such as dosage, energy, or the use of thermal annealing, may be controlled to remove carbon species at the interface between the barrier and the low K film. In a further approach, a pre-treatment plasma may be introduced prior to low k deposition to enhance heating of the barrier interface, such that a thin oxide interface is formed when low K deposition gases are introduced and the low K film is deposited.

    Abstract translation: 通过与上覆的多孔低K膜形成碳含量较低的中间层和富含氧化硅的多孔低K膜与下面的阻挡层的粘附性得到改善。 可以利用单独或组合的多种技术之一形成该粘合层。 在一种方法中，粘合层可以通过引入富氧化气体如O 2 / CO 2等形成。 以在沉积低K材料之前立即氧化Si前体。 在另一种方法中，在低K膜沉积之前，除去热不稳定化学品如α-萜品烯，伞花烃和任何其它不含氧的有机物。 在另一种方法中，可以修改硬件或处理参数，例如引入非硅含量组分的方式，以使得能够在低K膜沉积之前形成氧化物界面。 在另一种方法中，可以控制ebeam处理的参数，例如剂量，能量或使用热退火，以去除阻挡层和低K膜之间的界面处的碳物质。 在另一种方法中，可以在低k沉积之前引入预处理等离子体以增强阻挡界面的加热，使得当引入低K沉积气体并沉积低K膜时，形成薄氧化物界面。

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