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    Techniques promoting adhesion of porous low K film to underlying barrier layer
    2.
    发明授权
    Techniques promoting adhesion of porous low K film to underlying barrier layer 有权
    促进多孔低K膜粘附到底层阻挡层的技术

    公开(公告)号：US07547643B2

    公开(公告)日：2009-06-16

    申请号：US11046090

    申请日：2005-01-28

    申请人： Francimar Schmitt ,  Alexandros T. Demos ,  Derek R. Witty ,  Hichem M'Sadd ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Khaled A. Elsheref ,  Zhenjiang Cui

    发明人： Francimar Schmitt ,  Alexandros T. Demos ,  Derek R. Witty ,  Hichem M'Sadd ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Khaled A. Elsheref ,  Zhenjiang Cui

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/31633 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76832 ,  H01L2221/1047

    摘要： Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition. In still another approach, parameters of ebeam treatment such as dosage, energy, or the use of thermal annealing, may be controlled to remove carbon species at the interface between the barrier and the low K film. In a further approach, a pre-treatment plasma may be introduced prior to low k deposition to enhance heating of the barrier interface, such that a thin oxide interface is formed when low K deposition gases are introduced and the low K film is deposited.

    摘要翻译： 通过与上覆的多孔低K膜形成碳含量较低的中间层和富含氧化硅的多孔低K膜与下面的阻挡层的粘附性得到改善。 可以利用单独或组合的多种技术之一形成该粘合层。 在一种方法中，粘合层可以通过引入富氧化气体如O 2 / CO 2等形成。 以在沉积低K材料之前立即氧化Si前体。 在另一种方法中，在低K膜沉积之前，除去热不稳定化学品如α-萜品烯，伞花烃和任何其它不含氧的有机物。 在另一种方法中，可以修改硬件或处理参数，例如引入非硅含量组分的方式，以使得能够在低K膜沉积之前形成氧化物界面。 在另一种方法中，可以控制ebeam处理的参数，例如剂量，能量或使用热退火，以去除阻挡层和低K膜之间的界面处的碳物质。 在另一种方法中，可以在低k沉积之前引入预处理等离子体以增强阻挡界面的加热，使得当引入低K沉积气体并沉积低K膜时，形成薄氧化物界面。

    Characterizing an electron beam treatment apparatus
    4.
    发明授权
    Characterizing an electron beam treatment apparatus 失效
    表征电子束处理装置

    公开(公告)号：US07045798B2

    公开(公告)日：2006-05-16

    申请号：US10784315

    申请日：2004-02-20

    申请人： Khaled A. Elsheref ,  Alexandros T. Demos ,  Hichem M'saad

    发明人： Khaled A. Elsheref ,  Alexandros T. Demos ,  Hichem M'saad

    IPC分类号： G01N25/00 ,  H01L21/00 ,  H01J37/30

    CPC分类号： H01J37/077 ,  H01J37/304 ,  H01J2237/06366 ,  H01J2237/30433

    摘要： One embodiment of the present invention is a method for characterizing an electron beam treatment apparatus that includes: (a) e-beam treating one or more of a predetermined type of wafer or substrate utilizing one or more sets of electron beam treatment para meters; (b) making post-electron beam treatment measurements of intensity of a probe beam reflected from the surface of the one or more wafers in which thermal and/or plasma waves have been induced; and (c) developing data from the post-electron beam treatment measurements that provide insight into performance of the electron beam treatment apparatus.

    摘要翻译： 本发明的一个实施例是一种用于表征电子束处理装置的方法，其包括：（a）利用一组或多组电子束处理对数器电子束处理预定类型的晶片或衬底中的一种或多种; （b）进行电子束处理测量从已经引起热和/或等离子体波的一个或多个晶片的表面反射的探针光束的强度; 和（c）从后期电子束处理测量中开发数据，其提供对电子束处理设备的性能的洞察。

    Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to a large area electron beam
    5.
    发明授权
    Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to a large area electron beam 失效
    用于在暴露于大面积电子束之后降低电介质涂覆的基底上的电荷密度的方法和装置

    公开(公告)号：US07425716B2

    公开(公告)日：2008-09-16

    申请号：US11414649

    申请日：2006-04-27

    申请人： Alexandros T. Demos ,  Khaled A. Elsheref ,  Yuri Trachuk ,  Tom K. Cho ,  Girish A. Dixit ,  Hichem M'Saad ,  Derek Witty

    发明人： Alexandros T. Demos ,  Khaled A. Elsheref ,  Yuri Trachuk ,  Tom K. Cho ,  Girish A. Dixit ,  Hichem M'Saad ,  Derek Witty

    IPC分类号： H02H23/00

    CPC分类号： H01J37/317 ,  H01J2237/0041

    摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.

    摘要翻译： 根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。 在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。 在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。 在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。 在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

    Quartz showerhead for nanocure UV chamber
    8.
    发明授权
    Quartz showerhead for nanocure UV chamber 有权
    用于纳米级紫外线室的石英花洒

    公开(公告)号：US08911553B2

    公开(公告)日：2014-12-16

    申请号：US13248656

    申请日：2011-09-29

    申请人： Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Thomas Nowak ,  Jianhua Zhou

    发明人： Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Thomas Nowak ,  Jianhua Zhou

    IPC分类号： C23C16/455 ,  C23C16/48 ,  C23C16/56 ,  H01L21/67 ,  C23C16/44 ,  H01L21/677

    CPC分类号： C23C16/56 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/482 ,  H01L21/6719 ,  H01L21/67742 ,  Y10T137/0391

    摘要： Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region.

    摘要翻译： 本发明的实施例通常提供用于控制处理室内的气流分布的装置和方法。 在一个实施例中，处理工具包括限定处理区域的紫外线处理室，衬底支撑件，设置在UV辐射源和衬底支撑件之间的窗口，以及布置在窗口和衬底支撑件之间的处理区域内的透明花洒 并且在上下处理区域之间具有一个或多个透明花洒通道。 处理工具还包括气体分配环，气体分配环具有在气体分配环内部通道和上部加工区域之间的一个或多个气体分配环通道和位于气体分配环下方的气体出口环，气体出口环具有一个或多个气体 气体出口环内的气体出口环内部通道和下部加工区域之间的出口通道。

    Method and apparatus for modulating wafer treatment profile in UV chamber
    9.
    发明授权
    Method and apparatus for modulating wafer treatment profile in UV chamber 有权
    用于调节UV室中晶片处理轮廓的方法和装置

    公开(公告)号：US08455849B2

    公开(公告)日：2013-06-04

    申请号：US13301558

    申请日：2011-11-21

    申请人： Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos

    发明人： Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos

    IPC分类号： G01N21/23 ,  G02B13/14 ,  G02B21/16 ,  C23C16/48

    CPC分类号： G02B5/22 ,  G02B5/208 ,  H01L21/67115

    摘要： A method and apparatus for providing a uniform UV radiation irradiance profile across a surface of a substrate is provided. In one embodiment, a substrate processing tool includes a processing chamber defining a processing region, a substrate support for supporting a substrate within the processing region, an ultraviolet (UV) radiation source spaced apart from the substrate support and configured to transmit ultraviolet radiation toward the substrate positioned on the substrate support, and a light transmissive window positioned between the UV radiation source and the substrate support, the light transmissive window having an optical film layer coated thereon. In one example, the optical film layer has a non-uniform thickness profile in a radial direction, wherein a thickness of the optical film layer at the peripheral area of the light transmissive window is relatively thicker than at the center region of the optical film layer.

    摘要翻译： 提供了一种用于在衬底的表面上提供均匀的UV辐射辐照度分布的方法和装置。 在一个实施例中，衬底处理工具包括限定处理区域的处理室，用于支撑处理区域内的衬底的衬底支撑件，与衬底支撑件间隔开并且被配置成向衬底支撑件发射紫外线辐射的紫外线（UV）辐射源 位于基板支撑件上的基板和位于UV辐射源和基板支撑件之间的透光窗口，透光窗口具有涂覆在其上的光学膜层。 在一个示例中，光学膜层在径向上具有不均匀的厚度分布，其中在透光窗的周边区域处的光学膜层的厚度比在光学膜层的中心区域处的厚度更厚 。

    PULSE METHOD OF OXIDIZING SIDEWALL DIELECTRICS FOR HIGH CAPACITANCE APPLICATIONS
    10.
    发明申请
    PULSE METHOD OF OXIDIZING SIDEWALL DIELECTRICS FOR HIGH CAPACITANCE APPLICATIONS 失效
    用于高电容应用的氧化电介质的脉冲方法

    公开(公告)号：US20120187534A1

    公开(公告)日：2012-07-26

    申请号：US13011946

    申请日：2011-01-24

    申请人： Bo Xie ,  Alexandros T. Demos ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja

    发明人： Bo Xie ,  Alexandros T. Demos ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja

    IPC分类号： H01L29/02 ,  H01L21/28

    CPC分类号： H01L28/40 ,  H01L21/3105 ,  H01L28/90

    摘要： The present invention provides systems, methods and apparatus for manufacturing a memory cell. The invention includes forming a feature having sidewalls in a first dielectric material; forming a first conductive material on the sidewalls of the feature; depositing a layer of a second dielectric material on the conductive material; and exposing the second dielectric material to oxidizing species and ultraviolet light to oxidize the second dielectric material. Numerous additional aspects are disclosed.

    摘要翻译： 本发明提供用于制造存储单元的系统，方法和装置。 本发明包括在第一介电材料中形成具有侧壁的特征; 在所述特征的侧壁上形成第一导电材料; 在导电材料上沉积第二介电材料层; 以及将所述第二电介质材料暴露于氧化物质和紫外光以氧化所述第二电介质材料。 公开了许多附加方面。