公开(公告)号：US20090026552A1

公开(公告)日：2009-01-29

申请号：US11829156

申请日：2007-07-27

申请人： Da Zhang ,  Ning Liu ,  Mohamed S. Moosa

发明人： Da Zhang ,  Ning Liu ,  Mohamed S. Moosa

IPC分类号： H01L21/336 ,  H01L29/76

CPC分类号： H01L21/26586 ,  H01L21/26506 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

摘要： A transistor structure is formed by providing a semiconductor substrate and providing a gate above the semiconductor substrate. The gate is separated from the semiconductor substrate by a gate insulating layer. A source and a drain are provided adjacent the gate to define a transistor channel underlying the gate and separated from the gate by the gate insulating layer. A barrier layer is formed by applying nitrogen or carbon on opposing outer vertical sides of the transistor channel between the transistor channel and each of the source and the drain. In each of the nitrogen and the carbon embodiments, the vertical channel barrier retards diffusion of the source/drain dopant species into the transistor channel. There are methods for forming the transistor structure.

摘要翻译： 通过提供半导体衬底并在半导体衬底上方提供栅极形成晶体管结构。 栅极通过栅极绝缘层与半导体衬底分离。 在栅极附近提供源极和漏极，以限定栅极下方的晶体管沟道，并通过栅极绝缘层与栅极分离。 通过在晶体管沟道和源极和漏极中的每一个之间的晶体管沟道的相对的外部垂直侧上施加氮或碳来形成阻挡层。 在氮和碳实施方案中的每一个中，垂直沟道障碍阻止源极/漏极掺杂剂物质扩散到晶体管沟道中。 存在用于形成晶体管结构的方法。

公开(公告)号：US08330231B2

公开(公告)日：2012-12-11

申请号：US13048976

申请日：2011-03-16

申请人： Da Zhang ,  Ning Liu ,  Mohamed S. Moosa

发明人： Da Zhang ,  Ning Liu ,  Mohamed S. Moosa

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L29/06

CPC分类号： H01L21/26586 ,  H01L21/26506 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

摘要： A transistor structure is formed by providing a semiconductor substrate and providing a gate above the semiconductor substrate. The gate is separated from the semiconductor substrate by a gate insulating layer. A source and a drain are provided adjacent the gate to define a transistor channel underlying the gate and separated from the gate by the gate insulating layer. A barrier layer is formed by applying nitrogen or carbon on opposing outer vertical sides of the transistor channel between the transistor channel and each of the source and the drain. In each of the nitrogen and the carbon embodiments, the vertical channel barrier retards diffusion of the source/drain dopant species into the transistor channel. There are methods for forming the transistor structure.

摘要翻译： 通过提供半导体衬底并在半导体衬底上方提供栅极形成晶体管结构。 栅极通过栅极绝缘层与半导体衬底分离。 在栅极附近提供源极和漏极，以限定栅极下方的晶体管沟道，并通过栅极绝缘层与栅极分离。 通过在晶体管沟道和源极和漏极中的每一个之间的晶体管沟道的相对的外部垂直侧上施加氮或碳来形成阻挡层。 在氮和碳实施方案中的每一个中，垂直沟道障碍阻止源极/漏极掺杂剂物质扩散到晶体管沟道中。 存在用于形成晶体管结构的方法。

公开(公告)号：US20110163360A1

公开(公告)日：2011-07-07

申请号：US13048976

申请日：2011-03-16

申请人： Da Zhang ,  Ning Liu ,  Mohamed S. Moosa

发明人： Da Zhang ,  Ning Liu ,  Mohamed S. Moosa

IPC分类号： H01L29/772

CPC分类号： H01L21/26586 ,  H01L21/26506 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

摘要： A transistor structure is formed by providing a semiconductor substrate and providing a gate above the semiconductor substrate. The gate is separated from the semiconductor substrate by a gate insulating layer. A source and a drain are provided adjacent the gate to define a transistor channel underlying the gate and separated from the gate by the gate insulating layer. A barrier layer is formed by applying nitrogen or carbon on opposing outer vertical sides of the transistor channel between the transistor channel and each of the source and the drain. In each of the nitrogen and the carbon embodiments, the vertical channel barrier retards diffusion of the source/drain dopant species into the transistor channel. There are methods for forming the transistor structure.

摘要翻译： 通过提供半导体衬底并在半导体衬底上方提供栅极形成晶体管结构。 栅极通过栅极绝缘层与半导体衬底分离。 在栅极附近提供源极和漏极，以限定栅极下方的晶体管沟道，并通过栅极绝缘层与栅极分离。 通过在晶体管沟道和源极和漏极中的每一个之间的晶体管沟道的相对的外部垂直侧上施加氮或碳来形成阻挡层。 在氮和碳实施方案中的每一个中，垂直沟道障碍阻止源极/漏极掺杂剂物质扩散到晶体管沟道中。 存在用于形成晶体管结构的方法。

公开(公告)号：US07927989B2

公开(公告)日：2011-04-19

申请号：US11829156

申请日：2007-07-27

申请人： Da Zhang ,  Ning Liu ,  Mohamed S. Moosa

发明人： Da Zhang ,  Ning Liu ,  Mohamed S. Moosa

IPC分类号： H01L21/336 ,  H01L21/425

CPC分类号： H01L21/26586 ,  H01L21/26506 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

摘要： A transistor structure is formed by providing a semiconductor substrate and providing a gate above the semiconductor substrate. The gate is separated from the semiconductor substrate by a gate insulating layer. A source and a drain are provided adjacent the gate to define a transistor channel underlying the gate and separated from the gate by the gate insulating layer. A barrier layer is formed by applying nitrogen or carbon on opposing outer vertical sides of the transistor channel between the transistor channel and each of the source and the drain. In each of the nitrogen and the carbon embodiments, the vertical channel barrier retards diffusion of the source/drain dopant species into the transistor channel. There are methods for forming the transistor structure.

摘要翻译： 通过提供半导体衬底并在半导体衬底上方提供栅极形成晶体管结构。 栅极通过栅极绝缘层与半导体衬底分离。 在栅极附近提供源极和漏极，以限定栅极下方的晶体管沟道，并通过栅极绝缘层与栅极分离。 通过在晶体管沟道和源极和漏极中的每一个之间的晶体管沟道的相对的外部垂直侧上施加氮或碳来形成阻挡层。 在氮和碳实施方案中的每一个中，垂直沟道障碍阻止源极/漏极掺杂剂物质扩散到晶体管沟道中。 存在用于形成晶体管结构的方法。

公开(公告)号：US08643217B2

公开(公告)日：2014-02-04

申请号：US12674936

申请日：2007-12-26

申请人： Thomas Gietzold ,  Jeffrey J. Burchill ,  Da Zhang ,  Weiqian Hu

发明人： Thomas Gietzold ,  Jeffrey J. Burchill ,  Da Zhang ,  Weiqian Hu

IPC分类号： H02J3/00

CPC分类号： H02P9/02 ,  Y10T307/675

摘要： An apparatus and method for boosting output of a generator set are provided. The output of the generator set is connected to an electrical load. The apparatus includes an energy storage unit, and a power-electronic unit. The energy storage unit uses batteries and capacitors to store electric energy. The power-electronic unit measures an electrical parameter of the output of the generator set. Based on the measured electrical parameter and a predefined criterion, the power-electronic unit determines additional energy required by the electrical load. Thereafter, the power-electronic unit supplies the additional energy to the electrical load. The additional energy is drawn from the energy storage unit.

摘要翻译： 提供了一种用于提升发电机组的输出的装置和方法。 发电机组的输出连接到电气负载。 该装置包括能量存储单元和电力电子单元。 储能单元使用电池和电容器来储存电能。 电力电子单元测量发电机组输出的电气参数。 基于测量的电参数和预定标准，功率电子单元确定电负载所需的附加能量。 此后，电力电子单元向电负载提供额外的能量。 额外的能量从能量存储单元中抽出。

公开(公告)号：US08106462B2

公开(公告)日：2012-01-31

申请号：US12687374

申请日：2010-01-14

申请人： Xiangdong Chen ,  Weipeng Li ,  Anda C. Mocuta ,  Dae-Gyu Park ,  Melanie J. Sherony ,  Kenneth J. Stein ,  Haizhou Yin ,  Franck Arnaud ,  Jin-Ping Han ,  Laegu Kang ,  Yong Meng Lee ,  Young Way Teh ,  Voon-Yew Thean ,  Da Zhang

发明人： Xiangdong Chen ,  Weipeng Li ,  Anda C. Mocuta ,  Dae-Gyu Park ,  Melanie J. Sherony ,  Kenneth J. Stein ,  Haizhou Yin ,  Franck Arnaud ,  Jin-Ping Han ,  Laegu Kang ,  Yong Meng Lee ,  Young Way Teh ,  Voon-Yew Thean ,  Da Zhang

IPC分类号： H01L27/092

CPC分类号： H01L21/823807 ,  H01L29/7843

摘要： An integrated circuit structure includes a substrate and at least one pair of complementary transistors on or in the substrate. The pair of complementary transistors comprises a first transistor and a second transistor. The structure also includes a first stress-producing layer on the first transistor and the second transistor, and a second stress-producing layer on the first stress-producing layer over the first transistor and the second transistor. The first stress-producing layer applies tensile strain force on the first transistor and the second transistor. The second stress-producing layer applies compressive strain force on the first stress-producing layer, the first transistor, and the second transistor.

摘要翻译： 集成电路结构包括衬底和衬底上或衬底中的至少一对互补晶体管。 该对互补晶体管包括第一晶体管和第二晶体管。 该结构还包括第一晶体管和第二晶体管上的第一应力产生层，以及在第一晶体管和第二晶体管上的第一应力产生层上的第二应力产生层。 第一应力产生层在第一晶体管和第二晶体管上施加拉伸应变力。 第二应力产生层对第一应力产生层，第一晶体管和第二晶体管施加压缩应变力。

公开(公告)号：US07795089B2

公开(公告)日：2010-09-14

申请号：US11680219

申请日：2007-02-28

申请人： Laegu Kang ,  Vishal P. Trivedi ,  Da Zhang

发明人： Laegu Kang ,  Vishal P. Trivedi ,  Da Zhang

IPC分类号： H01L21/8238

CPC分类号： H01L29/7843 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/165 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66772

摘要： A semiconductor device structure is made on a semiconductor substrate having a semiconductor layer having isolation regions. A first gate structure is formed over a first region of the semiconductor layer, and a second gate structure is over a second region of the semiconductor layer. A first insulating layer is formed over the first and second regions. The first insulating layer can function as a mask during an etch of the semiconductor layer and can be removed selective to the isolation regions and the sidewall spacers. The first insulating layer is removed from over the first region to leave a remaining portion of the first insulating layer over the second region. The semiconductor layer is recessed in the first region adjacent to the first gate to form recesses. A semiconductor material is epitaxially grown in the recesses. The remaining portion of the first insulating layer is removed.

摘要翻译： 在具有具有隔离区域的半导体层的半导体衬底上制造半导体器件结构。 第一栅极结构形成在半导体层的第一区域上，第二栅极结构在半导体层的第二区域之上。 在第一和第二区域上形成第一绝缘层。 第一绝缘层可以在半导体层的蚀刻期间用作掩模，并且可以选择性地去除隔离区域和侧壁间隔物。 从第一区域上去除第一绝缘层，以在第二区域上留下第一绝缘层的剩余部分。 半导体层凹入与第一栅极相邻的第一区域中以形成凹陷。 在凹部中外延生长半导体材料。 去除第一绝缘层的剩余部分。

公开(公告)号：US20100078687A1

公开(公告)日：2010-04-01

申请号：US12242078

申请日：2008-09-30

申请人： Da Zhang ,  Voon-Yew Thean ,  Christopher V. Baiocco ,  Jie Chen ,  Weipeng Li ,  Young Way Teh ,  Jin Wallner

发明人： Da Zhang ,  Voon-Yew Thean ,  Christopher V. Baiocco ,  Jie Chen ,  Weipeng Li ,  Young Way Teh ,  Jin Wallner

IPC分类号： H01L21/8238 ,  H01L29/04

CPC分类号： H01L21/823807 ,  H01L29/045 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/7843

摘要： A semiconductor process and apparatus includes forming channel orientation CMOS transistors (24, 34) with enhanced hole mobility in the NMOS channel region and reduced channel defectivity in the PMOS region by depositing a first tensile etch stop layer (51) over the PMOS and NMOS gate structures, etching the tensile etch stop layer (51) to form tensile sidewall spacers (62) on the exposed gate sidewalls, and then depositing a second hydrogen rich compressive or neutral etch stop layer (72) over the NMOS and PMOS gate structures (26, 36) and the tensile sidewall spacers (62). In other embodiments, a first hydrogen-rich etch stop layer (81) is deposited and etched to form sidewall spacers (92) on the exposed gate sidewalls, and then a second tensile etch stop layer (94) is deposited over the NMOS and PMOS gate structures (26, 36) and the sidewall spacers (92).

摘要翻译： 一种半导体工艺和设备包括在NMOS沟道区中形成具有增强的空穴迁移率的<100>沟道定向CMOS晶体管（24,34），并且通过在PMOS区上沉积第一拉伸蚀刻停止层（51），减小PMOS区域中的沟道缺陷率 蚀刻所述拉伸蚀刻停止层（51）以在所述暴露的栅极侧壁上形成拉伸侧壁间隔物（62），然后在所述NMOS和PMOS栅极上沉积第二富氢压缩或中性蚀刻停止层（72） 结构（26,36）和拉伸侧壁间隔物（62）。 在其它实施例中，沉积并蚀刻第一富氢蚀刻停止层（81）以在暴露的栅极侧壁上形成侧壁间隔物（92），然后在NMOS和PMOS上沉积第二拉伸蚀刻停止层（94） 栅极结构（26,36）和侧壁间隔物（92）。

公开(公告)号：US07538002B2

公开(公告)日：2009-05-26

申请号：US11361171

申请日：2006-02-24

申请人： Da Zhang ,  Vance H. Adams ,  Bich-Yen Nguyen ,  Paul A. Grudowski

发明人： Da Zhang ,  Vance H. Adams ,  Bich-Yen Nguyen ,  Paul A. Grudowski

IPC分类号： H01L21/336

CPC分类号： H01L29/7846 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/7843 ,  H01L29/7848 ,  H01L29/78654

摘要： A semiconductor fabrication process includes forming isolation structures on either side of a transistor region, forming a gate structure overlying the transistor region, removing source/drain regions to form source/drain recesses, removing portions of the isolation structures to form recessed isolation structures, and filling the source/drain recesses with a source/drain stressor such as an epitaxially formed semiconductor. A lower surface of the source/drain recess is preferably deeper than an upper surface of the recessed isolation structure by approximately 10 to 30 nm. Filling the source/drain recesses may precede or follow forming the recessed isolation structures. An ILD stressor is then deposited over the transistor region such that the ILD stressor is adjacent to sidewalls of the source/drain structure thereby coupling the ILD stressor to the source/drain stressor. The ILD stressor is preferably compressive or tensile silicon nitride and the source/drain structure is preferably silicon germanium or silicon carbon.

摘要翻译： 半导体制造工艺包括在晶体管区域的任一侧上形成隔离结构，形成覆盖晶体管区域的栅极结构，去除源极/漏极区域以形成源极/漏极凹部，去除隔离结构的部分以形成凹入的隔离结构;以及 用诸如外延形成的半导体的源极/漏极应力源填充源/漏极凹部。 源极/漏极凹部的下表面优选比凹入的隔离结构的上表面深大约10至30nm。 填充源极/漏极凹部可以在形成凹入的隔离结构之前或之后。 然后将ILD应激源沉积在晶体管区域上，使得ILD应力源与源极/漏极结构的侧壁相邻，从而将ILD应激源耦合到源极/漏极应力源。 ILD应力器优选为压缩或拉伸氮化硅，并且源极/漏极结构优选为硅锗或硅碳。

公开(公告)号：US07494856B2

公开(公告)日：2009-02-24

申请号：US11393340

申请日：2006-03-30

申请人： Da Zhang ,  Ted R. White ,  Bich-Yen Nguyen

发明人： Da Zhang ,  Ted R. White ,  Bich-Yen Nguyen

IPC分类号： H01L21/336

CPC分类号： H01L29/7848 ,  H01L21/76254 ,  H01L21/76283 ,  H01L29/66772 ,  H01L29/78684

摘要： A semiconductor fabrication process includes forming an etch stop layer (ESL) overlying a buried oxide (BOX) layer and an active semiconductor layer overlying the ESL. A gate electrode is formed overlying the active semiconductor layer. Source/drain regions of the active semiconductor layer are etched to expose the ESL. Source/drain stressors are formed on the ESL where the source/drain stressors strain the transistor channel. Forming the ESL may include epitaxially growing a silicon germanium ESL having a thickness of approximately 30 nm or less. Preferably a ratio of the active semiconductor layer etch rate to the ESL etch rate exceeds 10:1. A wet etch using a solution of NH4OH:H2O heated to a temperature of approximately 75° C. may be used to etch the source/drain regions. The ESL may be silicon germanium having a first percentage of germanium. The source/drain stressors may be silicon germanium having a second percentage of germanium for P-type transistors, and they may be silicon carbon for N-type transistors.

摘要翻译： 半导体制造工艺包括形成覆盖掩埋氧化物（BOX）层和覆盖ESL的有源半导体层的蚀刻停止层（ESL）。 形成覆盖有源半导体层的栅电极。 蚀刻有源半导体层的源极/漏极区域以露出ESL。 源极/漏极应力源在ESL上形成，其源极/漏极应力应变应变晶体管沟道。 形成ESL可以包括外延生长厚度为约30nm或更小的硅锗ESL。 优选地，有源半导体层蚀刻速率与ESL蚀刻速率的比率超过10:1。 可以使用加热至约75℃温度的NH 4 OH:H 2溶液进行湿式蚀刻来蚀刻源极/漏极区域。 ESL可以是具有第一百分比的锗的硅锗。 源极/漏极应力源可以是对于P型晶体管具有第二百分比的锗的硅锗，并且它们可以是N型晶体管的硅碳。