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公开(公告)号：US08547182B2
公开(公告)日：2013-10-01
申请号：US13253394
申请日：2011-10-05
CPC分类号： H03L1/028 , H05K1/0271 , H05K3/3442 , H05K2201/09063 , H05K2201/10083 , H05K2201/10636 , Y02P70/611
摘要： Provided is an oven controlled crystal oscillator which can reduce an occurrence of cracks in an applied solder of a large-sized circuit component and improve reliability. It is an oven controlled crystal oscillator in which a slit is formed in a periphery or below a lower surface of a large-sized circuit component provided on the substrate, further, a plurality of small-sized circuit components, which are smaller than the large-sized circuit component, are disposed around the large-sized circuit component, as necessary, and for the plurality of small-sized circuit components, an electronic component, which is electrically connected, and a dummy electronic component, which is not electrically connected, are used.
摘要翻译： 本发明提供一种可控制晶体振荡器，其可以减少大尺寸电路元件的焊接中出现的裂缝，提高可靠性。 它是一种烤箱控制的晶体振荡器，其中在设置在基板上的大尺寸电路部件的下表面的周边或下方形成有狭缝，此外，多个小型电路部件小于大 根据需要设置在大尺寸电路部件周围，对于多个小型电路部件，电连接的电子部件和未电气连接的虚拟电子部件， 被使用。
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公开(公告)号：US20120200366A1
公开(公告)日：2012-08-09
申请号：US13358818
申请日：2012-01-26
CPC分类号： H03H9/10 , H03H9/13 , H05K1/111 , H05K3/3442 , H05K2201/09781 , H05K2201/10075 , H05K2201/2036 , Y10T29/42 , Y10T29/49144
摘要： An oscillator that can suppress a solder crack caused by a temperature change by a simple structure at low cost and improve heat cycle resistance performance is provided. The oscillator includes an epoxy resin board and an electronic component mounted on the board. Two-terminal electrode patterns are formed on the board, and connected to terminal electrodes of the electronic component by solder. A projection is formed on each of the electrode patterns at a part connected to a corresponding terminal electrode to create a space between the terminal electrode and the electrode pattern, and the solder forms a fillet in the space. This contributes to enhanced adhesion strength of the solder.
摘要翻译： 提供了一种可以通过简单的结构以低成本抑制由温度变化引起的焊料裂纹并提高耐热循环性能的振荡器。 振荡器包括环氧树脂板和安装在板上的电子部件。 在电路板上形成两端电极图形，并通过焊料与电子部件的端子电极连接。 在与相应的端子电极连接的部分上的每个电极图案上形成突起，以在端子电极和电极图案之间形成空间，并且焊料在该空间中形成圆角。 这有助于提高焊料的粘附强度。
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公开(公告)号：US20120098610A1
公开(公告)日：2012-04-26
申请号：US13253373
申请日：2011-10-05
CPC分类号： H05K3/3447
摘要： Provided are an oven controlled crystal oscillator in which in a case where a metal lead is soldered to a substrate, even if cracks occur in the solder, its reliability is not reduced, and a production method. That is, an oven controlled crystal oscillator in which pre-tinning solders are formed around openings on a front surface and a rear surface of a substrate in which of a through hole for passing a metal lead therethrough is formed; and in a state where a metal lead including a solder layer (a pre-tinning solder) formed on its surface is inserted into the through hole of the substrate, the metal lead extending from the openings is soldered to the openings on the front surface and the rear surface of the substrate, so as to form a main solder, and a production method of the oven controlled crystal oscillator are provided.
摘要翻译： 提供了一种烤箱控制的晶体振荡器，其中在将金属引线焊接到基板的情况下，即使在焊料中发生裂纹，其可靠性也不降低，并且制造方法。 也就是说，其中形成有用于使金属引线通过的通孔的基板的前表面和后表面上的开口周围形成预镀锡焊料的烤箱控制晶体振荡器; 并且在其表面上形成有焊锡层（预镀锡）的金属引线插入基板的贯通孔的状态下，从开口部延伸的金属引线焊接到前表面的开口部， 基板的后表面，以形成主焊料，并且提供了炉控晶体振荡器的制造方法。
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公开(公告)号：US08680932B2
公开(公告)日：2014-03-25
申请号：US13358818
申请日：2012-01-26
CPC分类号： H03H9/10 , H03H9/13 , H05K1/111 , H05K3/3442 , H05K2201/09781 , H05K2201/10075 , H05K2201/2036 , Y10T29/42 , Y10T29/49144
摘要： An oscillator that can suppress a solder crack caused by a temperature change by a simple structure at low cost and improve heat cycle resistance performance is provided. The oscillator includes an epoxy resin board and an electronic component mounted on the board. Two-terminal electrode patterns are formed on the board, and connected to terminal electrodes of the electronic component by solder. A projection is formed on each of the electrode patterns at a part connected to a corresponding terminal electrode to create a space between the terminal electrode and the electrode pattern, and the solder forms a fillet in the space. This contributes to enhanced adhesion strength of the solder.
摘要翻译： 提供了一种可以通过简单的结构以低成本抑制由温度变化引起的焊料裂纹并提高耐热循环性能的振荡器。 振荡器包括环氧树脂板和安装在板上的电子部件。 在电路板上形成两端电极图形，并通过焊料与电子部件的端子电极连接。 在与相应的端子电极连接的部分上的每个电极图案上形成突起，以在端子电极和电极图案之间形成空间，并且焊料在该空间中形成圆角。 这有助于提高焊料的粘附强度。
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公开(公告)号：US08514030B2
公开(公告)日：2013-08-20
申请号：US13253373
申请日：2011-10-05
CPC分类号： H05K3/3447
摘要： Provided are an oven controlled crystal oscillator in which in a case where a metal lead is soldered to a substrate, even if cracks occur in the solder, its reliability is not reduced, and a production method. That is, an oven controlled crystal oscillator in which pre-tinning solders are formed around openings on a front surface and a rear surface of a substrate in which of a through hole for passing a metal lead therethrough is formed; and in a state where a metal lead including a solder layer (a pre-tinning solder) formed on its surface is inserted into the through hole of the substrate, the metal lead extending from the openings is soldered to the openings on the front surface and the rear surface of the substrate, so as to form a main solder, and a production method of the oven controlled crystal oscillator are provided.
摘要翻译： 提供了一种烤箱控制的晶体振荡器，其中在将金属引线焊接到基板的情况下，即使在焊料中发生裂纹，其可靠性也不降低，并且制造方法。 也就是说，其中形成有用于使金属引线通过的通孔的基板的前表面和后表面上的开口周围形成预镀锡焊料的烤箱控制晶体振荡器; 并且在其表面上形成有焊锡层（预镀锡）的金属引线插入基板的贯通孔的状态下，从开口部延伸的金属引线焊接到前表面的开口部， 基板的后表面，以形成主焊料，并且提供了炉控晶体振荡器的制造方法。
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公开(公告)号：US08298839B2
公开(公告)日：2012-10-30
申请号：US12681995
申请日：2008-10-09
申请人： Kenji Kasahara
发明人： Kenji Kasahara
CPC分类号： H01L29/458 , H01L21/0274 , H01L27/3248 , H01L27/3262 , H01L29/41733 , H01L29/66742 , H01L29/78633 , H01L51/0023 , H01L51/0545 , H01L51/102
摘要： There is provided a thin film active element including a light-permeable substrate, a light-shielding source/drain electrode formed on the substrate, a light-permeable source/drain electrode formed on a plane surface to which the light-shielding source/drain electrode belongs, and disposed to have a gap interposed between the light-shielding source/drain electrode and the light-permeable source/drain electrode, a channel layer formed in the gap between the light-shielding source/drain electrode and the light-permeable source/drain electrode, and a gate electrode applying an electric field to the channel layer formed in the gap.
摘要翻译： 提供了一种薄膜有源元件，其包括透光性基板，形成在基板上的遮光源极/漏电极，形成在平面上的透光源极/漏电极，光屏蔽源极/漏极 并且被设置为在所述遮光源极/漏极和所述透光源极/漏极之间插入间隙，形成在所述遮光源极/漏极之间的间隙中的沟道层和所述透光源极/ 源极/漏极电极和向形成在间隙中的沟道层施加电场的栅电极。
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公开(公告)号：US08072279B2
公开(公告)日：2011-12-06
申请号：US12657907
申请日：2010-01-29
申请人： Kenji Kasahara
发明人： Kenji Kasahara
IPC分类号： H03B5/12
CPC分类号： H05K1/141 , H05K3/305 , H05K3/306 , H05K3/3442 , H05K3/3447 , H05K2201/049 , H05K2201/09036 , H05K2201/09181 , H05K2201/09845 , H05K2201/10075 , H05K2201/2036 , H05K2203/0195 , H05K2203/1446
摘要： An object of the invention is to provide an oscillator with a pedestal that facilitates soldering operations and offers a high level of productivity. A surface mount crystal oscillator with a pedestal comprises a crystal oscillator with lead wires led out from a bottom surface of a metallic base thereof; and a pedestal having a substantially rectangular outer shape in plan view, has insertion holes through which the lead wires pass, and is attached to a bottom surface of the crystal oscillator, and has mount terminals to be electrically connected to the lead wires formed on a bottom surface thereof. The configuration is such that the insertion holes are provided in four corner sections of the pedestal, in the four corner sections of the bottom surface of the pedestal where the insertion holes are formed there is provided a recess with an open outer periphery, and the lead wire is connected to a terminal electrode formed inside the recess, using solder.
摘要翻译： 本发明的目的是提供一种具有便于焊接操作的基座的振荡器，并提供高水平的生产率。 具有基座的表面贴装晶体振荡器包括：晶体振荡器，其引线从其金属基底的底面引出; 并且在平面图中具有大致矩形的外形的基座具有引线通过的插入孔，并且附接到晶体振子的底面，并且具有安装端子，电连接到形成在 其底面。 其结构是，在基座的四个角部设置插入孔，在形成有插入孔的基座的底面的四个角部，设置有开口外周的凹部， 使用焊料将导线连接到形成在凹部内部的端子电极。
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公开(公告)号：US07977750B2
公开(公告)日：2011-07-12
申请号：US12636375
申请日：2009-12-11
IPC分类号： H01L21/00
CPC分类号： H01L29/66765 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/78621 , H01L29/78627 , H01L29/78633
摘要： The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.
摘要翻译： 本发明提供了一种半导体器件，其中布置在每个电路中的底栅TFT或反向交错TFT适当地构成为与各个电路的功能一致，从而提高了半导体器件的工作效率和可靠性 。 在该结构中，像素TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的N沟道TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的P沟道TFT中的LDD区域布置成与沟道保护绝缘膜重叠并与栅电极重叠。
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公开(公告)号：US07122450B2
公开(公告)日：2006-10-17
申请号：US10098153
申请日：2002-03-15
申请人： Shunpei Yamazaki , Hisashi Ohtani , Toru Mitsuki , Hideto Ohnuma , Tamae Takano , Kenji Kasahara , Koji Dairiki
发明人： Shunpei Yamazaki , Hisashi Ohtani , Toru Mitsuki , Hideto Ohnuma , Tamae Takano , Kenji Kasahara , Koji Dairiki
CPC分类号： H01L29/66765 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78675 , H01L29/78678
摘要： A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed on the first crystalline semiconductor film. The second semiconductor layer contains a rare gas element at a concentration of 1×1019 to 2×1022/cm3, preferably 1×1020 to 1×1021/cm3 and oxygen at a concentration of 5×1017 to 1×1021/cm3. Subsequently, by a second treatment in an inert gas, the catalyst element remaining in the first crystalline semiconductor film is moved to the second semiconductor film.
摘要翻译： 在绝缘表面上形成第一非晶半导体膜。 加入促进结晶的催化剂元素。 此后，通过在惰性气体中的第一次热处理，形成第一晶体半导体膜。 在第一结晶半导体膜上形成阻挡层和第二半导体层。 第二半导体层含有浓度为1×10 19至2×10 22 / cm 3的稀有气体元素，优选为1×10 20， 浓度为5×10 17至1×10 21 / cm 3的氧气和1×10 12 / cm 3 3 。 随后，通过在惰性气体中的第二次处理，残留在第一结晶半导体膜中的催化剂元素移动到第二半导体膜。
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公开(公告)号：US06787807B2
公开(公告)日：2004-09-07
申请号：US09882265
申请日：2001-06-18
申请人： Shunpei Yamazaki , Toru Mitsuki , Kenji Kasahara , Taketomi Asami , Tamae Takano , Takeshi Shichi , Chiho Kokubo
发明人： Shunpei Yamazaki , Toru Mitsuki , Kenji Kasahara , Taketomi Asami , Tamae Takano , Takeshi Shichi , Chiho Kokubo
IPC分类号： H01L2904
CPC分类号： H01L29/78696 , G02F1/13454 , H01L27/12 , H01L27/1277 , H01L29/045 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78624 , H01L29/78675 , H01L29/78684
摘要： The orientation of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is improved and a TFT formed from this crystalline semiconductor film is provided. In a semiconductor device whose TFT is formed from a semiconductor layer mainly containing silicon, the semiconductor layer has a channel formation region and an impurity region doped with an impurity of one type of conductivity. 20% or more of the channel formation region is the {101} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film, the plane being detected by an electron backscatter diffraction pattern method, 3% or less of the channel formation region is the {001} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film, 5% or less of the channel formation region is the {111} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film.
摘要翻译： 通过使非晶半导体膜结晶而获得的结晶半导体膜的取向得到改善，并且提供了由该结晶半导体膜形成的TFT。 在其TFT由主要含硅的半导体层形成的半导体器件中，半导体层具有沟道形成区和掺杂有一种导电类型的杂质的杂质区。 沟道形成区域的20％以上是相对于结晶半导体膜的表面形成等于或小于10度的角度的{101}晶格面，通过电子反向散射衍射图法检测的平面 ，3％以下的沟道形成区域相对于结晶半导体膜的表面形成等于或小于10度的{001}晶格面，5％以下的沟道形成区域为 相对于晶体半导体膜的表面形成等于或小于10度的角度的{111}晶格面。
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