公开(公告)号：US4649024A

公开(公告)日：1987-03-10

申请号：US581139

申请日：1984-02-17

申请人： David G. Brock ,  John A. Baumann

发明人： David G. Brock ,  John A. Baumann

IPC分类号： C23C14/06 ,  C23C14/24 ,  H01L51/05 ,  B05D5/12

CPC分类号： C23C14/06 ,  C23C14/24 ,  H01L51/0508 ,  H01L51/0512

摘要： A method and apparatus are provided for producing fine quality pnictide films by vacuum evaporation and molecular beam deposition. A pnictide source, preferably phosphorous, is heated to produce a continuous supply of vapor species, preferably P.sub.4. The vapor species is cracked by a heated tungsten wire positioned adjacent the pnictide source to produce P.sub.2 molecules. A second tungsten wire cracker is located adjacent a substrate to prevent the recombination of P.sub.2 molecules into P.sub.4 molecules. The P.sub.2 molecules are deposited on the substrate and condense into amorphous pure phosphorous shiny red films. A separate source of alkali metal intercalate, preferably KC.sub.8, may also be heated to provide an alkali metal vapor for producing films of alkali metal polypnictide films, preferably KP.sub.x where x is equal to or greater than 15, to be deposited on the substrate. Fine quality films may also be deposited on a substrate by a molecular beam apparatus providing a continuous source of pnictide vapor species and a cracker disposed between the exit of a pnictide collimator and the substrate.

摘要翻译： 提供了一种用于通过真空蒸发和分子束沉积来生产精细质量的膜的方法和装置。 加热源，优选磷，以产生蒸气物质的连续供应，优选P4。 蒸汽物质通过与邻近源相邻的加热的钨丝开裂，产生P2分子。 第二钨丝裂纹器位于基底附近以防止P2分子复合成P4分子。 将P2分子沉积在基底上并冷凝成无定形纯磷光泽红膜。 也可以加热单独的碱金属插层源，优选KC8，以提供碱金属蒸汽，用于制备沉积在基底上的碱金属聚合物膜，优选KPx（其中x等于或大于15）的薄膜。 也可以通过分子束装置将优质膜沉积在基底上，分子束装置提供连续的气相物质源和设置在射线准直仪的出口与基底之间的裂纹器。

公开(公告)号：US4596721A

公开(公告)日：1986-06-24

申请号：US509159

申请日：1983-06-29

申请人： David G. Brock ,  John A. Baumann

发明人： David G. Brock ,  John A. Baumann

IPC分类号： C01B25/00 ,  C01B25/02 ,  C01B25/04 ,  C01B25/08 ,  C03C17/22 ,  C09K21/04 ,  C23C14/06 ,  C23C14/24 ,  C23C14/54 ,  C30B23/02 ,  C30B25/02 ,  H01L51/05 ,  B05D5/12 ,  C23C16/00

CPC分类号： C30B23/02 ,  C01B25/003 ,  C01B25/02 ,  C01B25/04 ,  C01B25/08 ,  C01B25/081 ,  C01B25/088 ,  C03C17/22 ,  C09K21/04 ,  C23C14/06 ,  C23C14/24 ,  C23C14/541 ,  C30B25/02 ,  C30B29/10 ,  C03C2217/28 ,  C03C2217/283 ,  C03C2217/29 ,  C03C2218/15 ,  H01L51/0508 ,  H01L51/0512

摘要： Fine quality catenated phosphorus thin films are produced in a high vacuum evaporator. Heated tungsten wire crackers are provided above the phosphorus boat and below the substrates. Amorphous pure phosphorus shiny red films have been deposited on glass, metallized glass and GaP and exhibit an optical edge at 2.0 eV. Films of KP.sub.x where x is equal to 15 or greater than 15 are produced by utilizing a second baffled boat source containing the potassium graphite intercalate, KC.sub.8. Addition of a nickel evaporation source provides nickel-doped polyphosphide films.

摘要翻译： 在高真空蒸发器中生产优质的连接磷薄膜。 加热的钨丝饼干提供在磷舟上方和底物下面。 无定形纯磷闪光红膜已经沉积在玻璃，金属化玻璃和GaP上，并呈现出2.0eV的光学边缘。 通过利用包含钾石墨插层物KC8的第二挡板船源产生X等于15或大于15的KPx膜。 添加镍蒸发源提供掺镍多磷化物膜。

公开(公告)号：US4567503A

公开(公告)日：1986-01-28

申请号：US509210

申请日：1983-06-29

申请人： Diego Olego ,  David G. Brock ,  John A. Baumann ,  William E. Spicer

发明人： Diego Olego ,  David G. Brock ,  John A. Baumann ,  William E. Spicer

IPC分类号： H01L29/812 ,  H01L21/314 ,  H01L21/338 ,  H01L23/29 ,  H01L23/31 ,  H01L29/78 ,  H01L31/04 ,  H01L31/10 ,  H01L33/00 ,  H01L29/34 ,  H01L29/20 ,  H01L29/161

CPC分类号： H01L23/291 ,  H01L21/314 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/13063 ,  H01L2924/3025

摘要： Metal-insulator-semiconductor devices are formed on III-V semiconductors utilizing a pnictide rich insulating layer. The layer may be applied by vacuum evaporation, sputtering, chemical vapor deposition, and from a liquid melt. Gallium arsenide, indium phosphide, and gallium phosphide substrates are insulated with an alkali metal high pnictide polypnictide, preferably a polyphosphide, having the formula MP.sub.x where x is equal to or greater than 15, including new forms of phosphorus grown in the presence of an alkali metal where x is much greater than 15. A KP.sub.15 layer is preferred. They may also be insulated with a layer of a solid elemental pnictide, namely phosphorus, arsenic, antimony or bismuth applied by one of the above named processes. An elemental phosphorus layer is preferred. A silicon nitride, Si.sub.3 N.sub.4, layer may be added on top of the pnictide layer to increase the breakdown voltage of the insulating layer.

摘要翻译： 金属绝缘体半导体器件利用富含pnictide的绝缘层在III-V半导体上形成。 该层可以通过真空蒸发，溅射，化学气相沉积和液体熔融来施加。 砷化镓，磷化铟和磷化镓衬底与碱金属高聚合物聚合物（优选多磷化物）绝缘，其具有式x x等于或大于15，包括在碱存在下生长的新形式的磷 金属，其中x远大于15.KP15层是优选的。 它们也可以用一层固体元素，即由上述任一方法之一施加的磷，砷，锑或铋来绝缘。 元素磷层是优选的。 氮化硅Si 3 N 4层可以添加到pnictide层的顶部以增加绝缘层的击穿电压。

公开(公告)号：US09545697B2

公开(公告)日：2017-01-17

申请号：US12419054

申请日：2009-04-06

申请人： Eric Whinnem ,  Gary A. Lipczynski ,  John A. Baumann

发明人： Eric Whinnem ,  Gary A. Lipczynski ,  John A. Baumann

IPC分类号： B23B39/00 ,  B23B47/00 ,  B23B47/28 ,  B23Q1/54 ,  B23Q9/00

CPC分类号： B23Q1/5462 ,  B23Q9/0014 ,  Y10T29/49622 ,  Y10T29/5107 ,  Y10T408/03 ,  Y10T408/55 ,  Y10T408/554

摘要： A method for performing operations on a structure. A moveable platform may be positioned in an area relative to the structure to define a working envelope. The moveable platform may be connected to a tool that may be moved around a plurality of axes within the working envelope using the moveable platform. The tool may be moved to a plurality of locations within the working envelope using the moveable platform. An operation may be performed with the tool through the working envelope at each of the plurality of locations using the moveable platform.

摘要翻译： 一种在结构上执行操作的方法。 可移动平台可以位于相对于结构的区域中以限定工作包络。 可移动平台可以连接到可以使用可移动平台在工作包络内围绕多个轴线移动的工具。 可以使用可移动平台将工具移动到工作外壳内的多个位置。 可以使用该可移动平台通过工具在多个位置中的每个位置处通过工作包络来执行操作。

公开(公告)号：US09033328B2

公开(公告)日：2015-05-19

申请号：US10698215

申请日：2003-10-31

申请人： John A. Baumann

发明人： John A. Baumann

IPC分类号： B25B5/14 ,  B25B5/06 ,  B23K37/04 ,  B23K20/12 ,  B25B5/00

CPC分类号： B23K37/04 ,  B23K20/126 ,  B25B5/003 ,  B25B5/061 ,  B25B5/14

摘要： The present invention is directed to apparatus and methods for clamping along a work piece. In one embodiment, a clamping system includes one or more force applying units each including a plunger or force applying member adapted to apply clamping force to the work piece, and one or more coupling units linked with the force applying units forming a chain of force applying units and coupling units. The coupling units may include a lockable pivot adapted to pivot to conform the chain to the surface of the work piece when unlocked, and adapted to be locked when at least one of the plurality of force applying units applies clamping force to the work piece. In another embodiment, a clamping system may include multi-axis pivot units. In a further embodiment, a clamping system may include length adjusting units.

摘要翻译： 本发明涉及沿着工件夹持的装置和方法。 在一个实施例中，夹紧系统包括一个或多个施力单元，每个施加单元包括适于向工件施加夹紧力的柱塞或力施加构件，以及与施加力施加单元相连的一个或多个联接单元， 单元和耦合单元。 联接单元可以包括可锁定的枢轴，其适于在解锁时枢转以使链条与工件的表面一致，并且当多个施力单元中的至少一个向工件施加夹紧力时适于被锁定。 在另一个实施例中，夹紧系统可以包括多轴枢轴单元。 在另一实施例中，夹紧系统可以包括长度调节单元。

公开(公告)号：US08499433B2

公开(公告)日：2013-08-06

申请号：US11764304

申请日：2007-06-18

申请人： Mike P. Matlack ,  Kurt A. Burton ,  John A. Baumann

发明人： Mike P. Matlack ,  Kurt A. Burton ,  John A. Baumann

IPC分类号： B23Q7/00

CPC分类号： B23Q3/062 ,  B23Q3/069 ,  Y10T29/49828 ,  Y10T29/49998

摘要： A clamping system can be reconfigured to clamp any of multiple workpieces having differing shapes. The system includes a retention assembly for retaining an inflatable bladder that applies a clamping force to the workpiece. The retention assembly includes a flexible chain of pivotally connected links that can be locked in place to form a rigid assembly that conforms to the shape of the workpiece. The links can be unlocked to allow reconfiguration of the retention assembly into shapes matching other workpieces.

摘要翻译： 可以重新配置夹紧系统以夹紧具有不同形状的多个工件中的任何一个。 该系统包括用于保持向工件施加夹紧力的可膨胀囊的保持组件。 保持组件包括可枢转地连接的链节的柔性链，其可以被锁定就位以形成符合工件形状的刚性组件。 可以解锁链接以允许保持组件重构成与其它工件匹配的形状。

公开(公告)号：US08141859B2

公开(公告)日：2012-03-27

申请号：US11934284

申请日：2007-11-02

申请人： Michael P. Matlack ,  Kurt A. Burton ,  John A. Baumann

发明人： Michael P. Matlack ,  Kurt A. Burton ,  John A. Baumann

IPC分类号： B25B5/00

CPC分类号： B23K20/26 ,  B23K20/1225 ,  Y10T29/53983

摘要： An apparatus and method for separating a pin tool from a shoulder tool, after the pin tool and shoulder tool have become welded together during a friction stir welding operation. In one exemplary embodiment a frame is used to support the shoulder tool. A fluid pressure actuating assembly is used for gradually exerting a force on the pin tool while the shoulder tool is held stationary within the frame. The gradually increasing force gradually breaks the weld and separates the pin tool from the shoulder tool without damaging the pin tool.

摘要翻译： 在摩擦搅拌焊接操作中，在销工具和肩部工具已经焊接在一起之后，用于将销工具与肩部工具分离的装置和方法。 在一个示例性实施例中，框架用于支撑肩部工具。 流体压力致动组件用于在肩部工具保持固定在框架内时逐渐施加在销工具上的力。 逐渐增加的力逐渐破坏焊缝，并将销工具与肩部工具分离，而不会损坏销钉工具。

公开(公告)号：US20080230584A1

公开(公告)日：2008-09-25

申请号：US11687907

申请日：2007-03-19

申请人： Richard J. Lederich ,  John A. Baumann

发明人： Richard J. Lederich ,  John A. Baumann

IPC分类号： B23K20/12

CPC分类号： B23K20/1225 ,  C22F1/04

摘要： A method of manufacturing a workpiece is provided. The method generally includes friction stir welding at least one structural member, selectively removing material from the surfaces of the workpiece at the location of a friction stir weld joint, and thereafter subjecting the workpiece to a solution treat, quench, and age treatment. By selectively removing regions from the surfaces of the workpiece that are defined by nonuniform material properties adapted to nucleate nonuniform grain growth during the solution treat, quench, and age treatment, a subsequent grain growth during the thermal treatment can be at least partially prevented.

摘要翻译： 提供了一种制造工件的方法。 该方法通常包括摩擦搅拌焊接至少一个结构构件，在摩擦搅拌焊接接头的位置选择性地从工件的表面去除材料，然后对工件进行溶液处理，淬火和老化处理。 通过选择性地从工件表面去除区域，其由在溶液处理，淬火和老化处理期间适应成核不均匀晶粒生长的不均匀材料特性限定，可以至少部分地防止在热处理期间随后的晶粒生长。

公开(公告)号：US5032472A

公开(公告)日：1991-07-16

申请号：US322688

申请日：1989-03-13

申请人： Christian G. Michel ,  Rozalie Schachter ,  Mark A. Kuck ,  John A. Baumann ,  Paul M. Raccah

发明人： Christian G. Michel ,  Rozalie Schachter ,  Mark A. Kuck ,  John A. Baumann ,  Paul M. Raccah

IPC分类号： C01B25/00 ,  C01B25/02 ,  C01B25/04 ,  C01B25/08 ,  C03C17/22 ,  C09K21/04 ,  C23C14/06 ,  C23C14/24 ,  C23C14/54 ,  C30B23/02 ,  C30B25/02 ,  H01L21/28 ,  H01L21/314 ,  H01L21/3205 ,  H01L21/363 ,  H01L23/29 ,  H01L23/31 ,  H01L29/24 ,  H01L29/49 ,  H01L29/51 ,  H01L29/812 ,  H01L31/032 ,  H01L51/00 ,  H01L51/05 ,  H01L51/40

CPC分类号： H01L51/0541 ,  C01B25/003 ,  C01B25/02 ,  C01B25/04 ,  C01B25/08 ,  C01B25/081 ,  C01B25/088 ,  C03C17/22 ,  C09K21/04 ,  C23C14/06 ,  C23C14/24 ,  C23C14/541 ,  C30B23/02 ,  C30B25/02 ,  C30B29/10 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02631 ,  H01L21/28167 ,  H01L21/314 ,  H01L21/32051 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/8126 ,  H01L31/032 ,  H01L51/0545 ,  C03C2217/28 ,  C03C2217/283 ,  C03C2217/29 ,  C03C2218/15 ,  H01L2924/0002 ,  H01L51/001 ,  H01L51/0508 ,  H01L51/0512

摘要： High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.These semiconductors belong to the class of polymer forming, trivalent atomic species forming homatomic, covalent bonds having a coordination number slightly less than 3. The predominant local order appears to be all parallel pentagonal tubes in all forms, including amorphous, except for the monoclinic and twisted fiber allotropes of phosphorus.Large crystal monoclinic phosphorus (a birefringent material) in two habits, a twisted fiber phosphorus allotrope and a star shaped fibrous high phosphorus material are also disclosed.Single and multiple source vapor transport, condensed phase, melt quench, flash evaporation, chemical vapor deposition, and molecular flow deposition may be employed in synthesizing these materials. Vapor transport may be employed to purify phosphorus.

摘要翻译： 高磷多磷化物，即MPx，其中M是碱金属（Li，Na，K，Rb和Cs）或模拟碱金属键合行为的金属，x = 7至15或非常大于15（新 磷的形式）是其晶体，多晶和无定形形式（晶粒和膜）中的有用的半导体。 MP15似乎具有最好的性能，KP15更容易合成。 P可以包括其他三价物以及其它三价原子物种。 电阻降低可以通过掺杂Ni，Fe，Cr和其他具有d或f外电子水平的金属来实现; 或通过并入As和其他pnictides。 掺杂有Ni并且以Ni作为背接触的结合装置的顶部触点包括Cu，Al，Mg，Ni，Au，Ag和Ti。 还公开了光电，光致抗蚀剂和光致发光器件。 所有半导体应用似乎都是可行的。 这些半导体属于聚合物形成类型，三价原子物质形成具有略小于3的配位数的同原子，共价键。主要的局部顺序似乎是所有形式的所有平行五边形管，包括无定形，除了单斜晶和 扭曲的纤维同素异形体的磷。 还公开了两种习惯中的大晶体单斜晶磷（双折射材料），扭曲纤维磷同素异形体和星形纤维状高磷材料。 可以在合成这些材料时采用单源和多源蒸气输送，冷凝相，熔融淬火，闪蒸，化学气相沉积和分子流沉积。 可以使用蒸气传输来净化磷。

公开(公告)号：US4822581A

公开(公告)日：1989-04-18

申请号：US677845

申请日：1984-12-04

申请人： Christian G. Michel ,  Rozalie Schachter ,  Mark A. Kuck ,  John A. Baumann ,  Paul M. Raccah

发明人： Christian G. Michel ,  Rozalie Schachter ,  Mark A. Kuck ,  John A. Baumann ,  Paul M. Raccah

IPC分类号： C03C17/22 ,  H01L29/24 ,  H01L31/032 ,  H01L51/05 ,  C01B25/08

CPC分类号： H01L29/24 ,  C03C17/22 ,  H01L31/032 ,  C03C2217/28 ,  C03C2217/283 ,  C03C2217/29 ,  C03C2218/15 ,  H01L51/0508 ,  H01L51/0512

摘要： High phosphorus polyphosphides, namely MP.sub.x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconducutors in their crystalline, polycrystalline and amorphous forms (boules and films). MP.sub.15 appears to have the best properties and KP.sub.15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.These semiconductors belong to the class of polymer forming, trivalent atomic species forming homatomic, covalent bonds having a coordination number slightly less than 3. The predominant local order appears to be all parallel pentagonal tubes in all forms, including amorphous, except for the monoclinic and twisted fiber allotropes of phosphorus.Large crystal monoclinic phosphorus (a birefringent material) in two habits, a twisted fiber phosphorus allotrope and a star shaped fibrous high phosphorus material are also disclosed.Single and multiple source vapor transport, condensed phase, melt quench, flash evaporation, chemical vapor deposition, and molecular flow deposition may be employed in synthesizing these materials. Vapor transport may be employed to purify phosphorus.The materials may be employed as protective coatings, optical coatings, fire retardants, fillers and reinforcing fillers for plastics and glasses, antireflection coatings for infrared optics, infrated transmitting windows, and optical rotators.