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公开(公告)号：US20110155058A1
公开(公告)日：2011-06-30
申请号：US12967576
申请日：2010-12-14
CPC分类号： H01L21/67115 , C23C16/46 , C23C16/52 , C30B25/105 , C30B25/12
摘要： Methods and apparatus for processing substrates are disclosed herein. In some embodiments, an apparatus for processing a substrate may include a substrate support having a base having a convex surface, an annular ring disposed on the base, and an edge ring disposed on the annular ring to support a substrate, wherein the base, annular ring, and edge ring form a radiant cavity capable of reflecting energy radiated from a backside of a substrate when disposed on the edge ring and wherein the backside of the substrate faces the convex surface of the base. Alternatively or in combination, in some embodiments, the base may include a metal layer encapsulated between a transparent non-metal upper layer and a non-metal lower layer.
摘要翻译： 本文公开了处理衬底的方法和设备。 在一些实施例中，用于处理衬底的装置可以包括具有底部的衬底支撑件，其具有凸形表面，设置在基座上的环形环和设置在环形环上以支撑衬底的边缘环，其中， 环和边缘环形成辐射腔，其能够在布置在边缘环上时反射从衬底的背面辐射的能量，并且其中衬底的背面朝向基底的凸面。 或者或组合地，在一些实施方案中，碱可以包括封装在透明非金属上层和非金属下层之间的金属层。
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公开(公告)号：US08991332B2
公开(公告)日：2015-03-31
申请号：US12394203
申请日：2009-02-27
申请人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
发明人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.
摘要翻译： 公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的系统和装置。 腔表面的多于一个部分可以进行温度调制。
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公开(公告)号：US07718225B2
公开(公告)日：2010-05-18
申请号：US11205647
申请日：2005-08-17
申请人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
发明人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
IPC分类号： C23C16/00
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Methods are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated, and may be accomplished by actively keeping the temperature of a first wall of the reaction chamber above the temperature of a second wall during the film formation process.
摘要翻译： 公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的方法。 腔表面的多于一部分可以被温度调节，并且可以通过在成膜过程中将反应室的第一壁的温度高于第二壁的温度来实现。
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4.发明授权Methods for in-situ generation of reactive etch and growth specie in film formation processes 有权在膜形成过程中原位产生反应性蚀刻和生长物质的方法公开(公告)号：US07709391B2
公开(公告)日：2010-05-04
申请号：US11336178
申请日：2006-01-20
IPC分类号： H01L21/302
CPC分类号： H01L21/02532 , C23C16/452 , C30B25/02 , C30B29/06 , H01L21/02529 , H01L21/0262 , H01L21/02636
摘要： Methods and apparatus are disclosed for the formation and utilization of metastable specie in a reaction chamber for processing substrates. The metastable specie may be used for etching the surface of substrates in situ, deposition processes during processing of the substrate.
摘要翻译： 公开了用于在处理衬底的反应室中形成和利用亚稳态物质的方法和装置。 亚稳态物质可用于原位蚀刻衬底表面，在衬底加工过程中沉积过程。
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公开(公告)号：US20090211523A1
公开(公告)日：2009-08-27
申请号：US12394203
申请日：2009-02-27
申请人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
发明人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
IPC分类号： B05C11/00
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.
摘要翻译： 公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的系统和装置。 腔表面的多于一个部分可以进行温度调制。
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公开(公告)号：US08313804B2
公开(公告)日：2012-11-20
申请号：US13109533
申请日：2011-05-17
IPC分类号： C23C16/44 , C23C16/448 , C23C16/38 , C23C16/30
CPC分类号： C23C16/4482
摘要： Methods and apparatus are disclosed for the formation of vaporizing liquid precursor materials. The methods or apparatus can be used as part of a chemical vapor deposition apparatus or system, for example for forming films on substrates. The methods and apparatus involve providing a vessel for containing a liquid precursor and diffusing element having external cross-section dimensions substantially equal to the internal cross-sectional dimensions of the vessel.
摘要翻译： 公开了用于形成蒸发液体前体材料的方法和装置。 方法或装置可以用作化学气相沉积装置或系统的一部分，例如用于在基底上形成膜。 所述方法和装置包括提供用于容纳液体前体的容器和具有基本上等于容器的内部横截面尺寸的外部横截面尺寸的扩散元件。
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公开(公告)号：US20080014350A1
公开(公告)日：2008-01-17
申请号：US11697937
申请日：2007-04-09
申请人： David Carlson , Errol Sanchez , Satheesh Kuppurao
发明人： David Carlson , Errol Sanchez , Satheesh Kuppurao
IPC分类号： C23C16/00
CPC分类号： C23C16/4482
摘要： Methods and apparatus are disclosed for the formation of vaporizing liquid precursor materials. The methods or apparatus can be used as part of a chemical vapor deposition apparatus or system, for example for forming films on substrates. The methods and apparatus involve providing a vessel for containing a liquid precursor and diffusing element having external cross-section dimensions substantially equal to the internal cross-sectional dimensions of the vessel.
摘要翻译： 公开了用于形成蒸发液体前体材料的方法和装置。 方法或装置可以用作化学气相沉积装置或系统的一部分，例如用于在基底上形成膜。 所述方法和装置包括提供用于容纳液体前体的容器和具有基本上等于容器的内部横截面尺寸的外部横截面尺寸的扩散元件。
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8.发明申请Methods for in-situ generation of reactive etch and growth specie in film formation processes 有权在膜形成过程中原位产生反应性蚀刻和生长物质的方法公开(公告)号：US20070170148A1
公开(公告)日：2007-07-26
申请号：US11336178
申请日：2006-01-20
IPC分类号： B44C1/22 , H01L21/302 , H01L21/461 , C03C15/00
CPC分类号： H01L21/02532 , C23C16/452 , C30B25/02 , C30B29/06 , H01L21/02529 , H01L21/0262 , H01L21/02636
摘要： Methods and apparatus are disclosed for the formation and utilization of metastable specie in a reaction chamber for processing substrates. The metastable specie may be used for etching the surface of substrates in situ, deposition processes during processing of the substrate.
摘要翻译： 公开了用于在处理衬底的反应室中形成和利用亚稳态物质的方法和装置。 亚稳态物质可用于原位蚀刻衬底表面，在衬底加工过程中沉积过程。
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公开(公告)号：US09058988B2
公开(公告)日：2015-06-16
申请号：US12717266
申请日：2010-03-04
申请人： Jean R. Vatus , Jinsong Tang , Yihwan Kim , Satheesh Kuppurao , Errol Sanchez
发明人： Jean R. Vatus , Jinsong Tang , Yihwan Kim , Satheesh Kuppurao , Errol Sanchez
CPC分类号： H01L21/02538 , C23C16/0245 , C23C16/24 , H01L21/02381 , H01L21/02532 , H01L21/02661
摘要： Methods of depositing layers having reduced interfacial contamination are disclosed herein. The inventive methods may advantageously reduce contamination at the interface between deposited layers, for example, between a deposited layer and an underlying substrate or film. In some embodiments, a method of depositing a layer may include annealing a silicon-containing layer having a first layer disposed thereon in a reducing atmosphere; removing the first layer using an etching process to expose the silicon-containing layer after annealing; and depositing a second layer on the exposed silicon-containing layer.
摘要翻译： 本文公开了沉积具有减小的界面污染的层的方法。 本发明的方法可以有利地减少沉积层之间的界面处的污染，例如沉积层和下面的基底或膜之间的污染。 在一些实施例中，沉积层的方法可以包括在还原气氛中退火其上设置有第一层的含硅层; 使用蚀刻工艺除去第一层，以在退火后露出含硅层; 以及在暴露的含硅层上沉积第二层。
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10.发明申请公开(公告)号：US20070042117A1
公开(公告)日：2007-02-22
申请号：US11205647
申请日：2005-08-17
申请人： Satheesh Kuppurao , David Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
发明人： Satheesh Kuppurao , David Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
IPC分类号： C23C16/00
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Methods, systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.
摘要翻译： 公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的方法，系统和装置。 腔表面的多于一个部分可以进行温度调制。
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