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41 条记录 (耗时 0.026 秒)

    SUBSTRATE PROCESSING APPARATUS HAVING A RADIANT CAVITY
    8.
    发明申请
    SUBSTRATE PROCESSING APPARATUS HAVING A RADIANT CAVITY 审中-公开
    具有辐射空间的基板处理装置

    公开(公告)号：US20110155058A1

    公开(公告)日：2011-06-30

    申请号：US12967576

    申请日：2010-12-14

    申请人： David K. Carlson ,  Errol Sanchez ,  Herman Diniz ,  Satheesh Kuppurao

    发明人： David K. Carlson ,  Errol Sanchez ,  Herman Diniz ,  Satheesh Kuppurao

    IPC分类号： B05C13/02 ,  C23C16/00

    CPC分类号： H01L21/67115 ,  C23C16/46 ,  C23C16/52 ,  C30B25/105 ,  C30B25/12

    摘要： Methods and apparatus for processing substrates are disclosed herein. In some embodiments, an apparatus for processing a substrate may include a substrate support having a base having a convex surface, an annular ring disposed on the base, and an edge ring disposed on the annular ring to support a substrate, wherein the base, annular ring, and edge ring form a radiant cavity capable of reflecting energy radiated from a backside of a substrate when disposed on the edge ring and wherein the backside of the substrate faces the convex surface of the base. Alternatively or in combination, in some embodiments, the base may include a metal layer encapsulated between a transparent non-metal upper layer and a non-metal lower layer.

    摘要翻译： 本文公开了处理衬底的方法和设备。 在一些实施例中，用于处理衬底的装置可以包括具有底部的衬底支撑件，其具有凸形表面，设置在基座上的环形环和设置在环形环上以支撑衬底的边缘环，其中， 环和边缘环形成辐射腔，其能够在布置在边缘环上时反射从衬底的背面辐射的能量，并且其中衬底的背面朝向基底的凸面。 或者或组合地，在一些实施方案中，碱可以包括封装在透明非金属上层和非金属下层之间的金属层。

    Apparatus and methods for chemical vapor deposition
    9.
    发明授权
    Apparatus and methods for chemical vapor deposition 有权
    化学气相沉积的装置和方法

    公开(公告)号：US08313804B2

    公开(公告)日：2012-11-20

    申请号：US13109533

    申请日：2011-05-17

    申请人： David K. Carlson ,  Errol Sanchez ,  Satheesh Kuppurao

    发明人： David K. Carlson ,  Errol Sanchez ,  Satheesh Kuppurao

    IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/38 ,  C23C16/30

    CPC分类号： C23C16/4482

    摘要： Methods and apparatus are disclosed for the formation of vaporizing liquid precursor materials. The methods or apparatus can be used as part of a chemical vapor deposition apparatus or system, for example for forming films on substrates. The methods and apparatus involve providing a vessel for containing a liquid precursor and diffusing element having external cross-section dimensions substantially equal to the internal cross-sectional dimensions of the vessel.

    摘要翻译： 公开了用于形成蒸发液体前体材料的方法和装置。 方法或装置可以用作化学气相沉积装置或系统的一部分，例如用于在基底上形成膜。 所述方法和装置包括提供用于容纳液体前体的容器和具有基本上等于容器的内部横截面尺寸的外部横截面尺寸的扩散元件。

    Low temperature epitaxial growth of silicon-containing films using UV radiation
    10.
    发明授权
    Low temperature epitaxial growth of silicon-containing films using UV radiation 失效
    使用紫外线辐射的含硅薄膜的低温外延生长

    公开(公告)号：US07396743B2

    公开(公告)日：2008-07-08

    申请号：US10866471

    申请日：2004-06-10

    申请人： Kaushal K. Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

    发明人： Kaushal K. Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0262 ,  C23C16/482 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02661

    摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

    摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。