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    Low temperature epitaxial growth of silicon-containing films using UV radiation
    5.
    发明授权
    Low temperature epitaxial growth of silicon-containing films using UV radiation 失效
    使用紫外线辐射的含硅薄膜的低温外延生长

    公开(公告)号：US07396743B2

    公开(公告)日：2008-07-08

    申请号：US10866471

    申请日：2004-06-10

    申请人： Kaushal K. Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

    发明人： Kaushal K. Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0262 ,  C23C16/482 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02661

    摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

    摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。

    METHOD OF REMOVING CONTAMINANTS AND NATIVE OXIDES FROM A SUBSTRATE SURFACE
    6.
    发明申请
    METHOD OF REMOVING CONTAMINANTS AND NATIVE OXIDES FROM A SUBSTRATE SURFACE 有权
    从基底表面去除污染物和原生氧化物的方法

    公开(公告)号：US20120034761A1

    公开(公告)日：2012-02-09

    申请号：US13177409

    申请日：2011-07-06

    申请人： Satheesh Kuppurao ,  Manish Hemkar ,  Vinh Tran ,  Yihwan Kim

    发明人： Satheesh Kuppurao ,  Manish Hemkar ,  Vinh Tran ,  Yihwan Kim

    IPC分类号： H01L21/322

    CPC分类号： H01L21/02052 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/67109 ,  H01L21/6719

    摘要： Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include exposing a substrate having an oxide layer thereon to an oxidizing source. The oxidizing source oxidizes an upper portion of the substrate beneath the oxide layer to form an oxide layer having an increased thickness. The oxide layer with the increased thickness is then removed to expose a clean surface of the substrate. The removal of the oxide layer generally includes removal of contaminants present in and on the oxide layer, especially those contaminants present at the interface of the oxide layer and the substrate. An epitaxial layer may then be formed on the clean surface of the substrate.

    摘要翻译： 本发明的实施方案一般涉及从基底表面去除污染物和天然氧化物的方法。 所述方法通常包括将其上具有氧化物层的衬底暴露于氧化源。 氧化源氧化氧化层下面的衬底的上部以形成厚度增加的氧化物层。 然后去除具有增加的厚度的氧化物层以暴露衬底的干净的表面。 去除氧化物层通常包括去除存在于氧化物层中和氧化物层上的污染物，特别是存在于氧化物层和衬底的界面处的污染物。 然后可以在衬底的清洁表面上形成外延层。

    Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation
    7.
    发明授权
    Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation 有权
    使用接近紫外线辐射的含硅薄膜的低温外延生长

    公开(公告)号：US07262116B2

    公开(公告)日：2007-08-28

    申请号：US11401578

    申请日：2006-04-10

    申请人： Kaushal K. Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

    发明人： Kaushal K. Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0262 ,  C23C16/482 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02661

    摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

    摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。

    UV assisted low temperature epitaxial growth of silicon-containing films
    8.
    发明申请
    UV assisted low temperature epitaxial growth of silicon-containing films 审中-公开
    UV辅助低温外延生长的含硅膜

    公开(公告)号：US20070232031A1

    公开(公告)日：2007-10-04

    申请号：US11805428

    申请日：2007-05-22

    申请人： Kaushal Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

    发明人： Kaushal Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0262 ,  C23C16/482 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02661

    摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

    摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。

    Method of removing contaminants and native oxides from a substrate surface
    9.
    发明授权
    Method of removing contaminants and native oxides from a substrate surface 有权
    从基材表面除去污染物和天然氧化物的方法

    公开(公告)号：US08728944B2

    公开(公告)日：2014-05-20

    申请号：US13177409

    申请日：2011-07-06

    申请人： Satheesh Kuppurao ,  Manish Hemkar ,  Vinh Tran ,  Yihwan Kim

    发明人： Satheesh Kuppurao ,  Manish Hemkar ,  Vinh Tran ,  Yihwan Kim

    IPC分类号： H01L21/311

    CPC分类号： H01L21/02052 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/67109 ,  H01L21/6719

    摘要： Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include exposing a substrate having an oxide layer thereon to an oxidizing source. The oxidizing source oxidizes an upper portion of the substrate beneath the oxide layer to form an oxide layer having an increased thickness. The oxide layer with the increased thickness is then removed to expose a clean surface of the substrate. The removal of the oxide layer generally includes removal of contaminants present in and on the oxide layer, especially those contaminants present at the interface of the oxide layer and the substrate. An epitaxial layer may then be formed on the clean surface of the substrate.

    摘要翻译： 本发明的实施方案一般涉及从基底表面去除污染物和天然氧化物的方法。 所述方法通常包括将其上具有氧化物层的衬底暴露于氧化源。 氧化源氧化氧化层下面的衬底的上部以形成厚度增加的氧化物层。 然后去除具有增加的厚度的氧化物层以暴露衬底的干净的表面。 去除氧化物层通常包括去除存在于氧化物层中和氧化物层上的污染物，特别是存在于氧化物层和衬底的界面处的污染物。 然后可以在衬底的清洁表面上形成外延层。

    Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation
    10.
    发明申请
    Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation 有权
    使用接近紫外线辐射的含硅薄膜的低温外延生长

    公开(公告)号：US20060258124A1

    公开(公告)日：2006-11-16

    申请号：US11401578

    申请日：2006-04-10

    申请人： Kaushal Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

    发明人： Kaushal Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0262 ,  C23C16/482 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02661

    摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

    摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。